SILICON PHOTO DIODES BL-L4802PD Features: Ø 5*3.8*6.5mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter. Applications: High speed photo detector Camera Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc. Absolute Maximum Ratings at Ta=25°C Parameter Symbol Rating Power Dissipation Reverse Voltage Operation Temperature Storage Temperature Pd VR TOPR TSTG Lead Soldering Temperature TSOL Unit 150 35 -40 to +80 -40 to +85 mW V °C °C Max.260±5°C for 3 sec Max. (1.6mm from the base of the epoxy bulb) °C Electronic Optical Characteristics at Ta=25°C Items Wavelength of Peak Sensitivity Open Circuit Voltage Short Circuit Current Reverse Current Light Symbol Min. Typ. Max. Unit Condition ¦ËP - 940 - nm - VOC - 0.35 - V ISC 50 75 - uA H=5mW/cm2 ¦ËP=940nm IL 60 120 - uA ID - 5 30 nA Reverse Dark Current Reverse Break down Voltage Viewing angle VBR 35 170 - V 2¦È1/2 - 140 - Deg Rise/Fall Time Tr/Tf - 50/50 - nS APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] H=5mW/cm2 ¦ËP=940nm VR=5V H=0mW/cm2 VR=10V H=0mW/cm2 IR=100uA RL=1000¦¸ VR=10V SILICON PHOTO DIODES BL-L4802PD Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] SILICON PHOTO DIODES BL-L4802PD Typical electrical-optical characteristics curves: (A) 1.0 (B ) (C) ( D) (2) (3) (8) ( 4) (1) (6) ( 5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wav elength(nm) RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p ) (1) - GaAsP/GaAs 655nm/Red (9) - GaAlAs 880nm (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (6) - GaAlAs/GaAs 660nm/Super Red (D) - InGaAl/SiC 525nm/Ultra Green (8) - GaAsP/GaP 610nm/Super Red F O R W A R D C U R R E N T (m A ) 8 64 5 1 50 2 3 R E L A T IV E L U M IN O U S IN T E N S IT Y 40 30 20 10 0 1.2 1.6 2.0 2.4 2.6 3.0 4.0 F O R W A R D C U R R E N T (m A ) 3.0 2.0 5 B 1.0 0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE R E L A T IV 3 1 E 2 5 4 L 2 U M 1 3 IN O U 0.5 S IN T E N S 0.2 IT Y 0.1 -30 -20 50 1 40 60 80 40 30 20 1 6 2,4,8,A 3 5 10 0 100 20 3KHz 300KHz 1KHz 100KHz F-REFRESH R ATE 10 10KH z 9 8 7 6 5 ID C M A X . Ip e 4 a k M A 3 X . 2 -10 0 10 20 30 40 50 60 80 100 Ip e a k M A X . 30KHz 3 KHz 300Hz 100KHz 10KHz 1KHz 100H z 10 9 8 7 6 5 4 3 2 70 1 AMBIENT TEM PER ATUR E Ta(℃ ) 60 AMBIENT TEMPERATURE Ta( ℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE FORWARD CURRENT (mA) RELATIVE LUMI NOUS INTENSI TY VS. FORWARD CURRENT ID C M A X . 40 1 10 100 1000 tp-PU LSE DU RATION uS (1,2 ,3 ,4,6,8,B.D.J. K) 10,000 1 1 10 100 1000 tp-P ULSE DU RATION uS (5) NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000 SILICON PHOTO DIODES BL-L4802PD Packing and weighting 0.25g/pcs 1K pcs/bag Maximum 6 Bag/Inner Box 3 Inner Box /Box 9 Inner Box /Box APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 4 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected]