RENESAS RJK1562DJE

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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“Standard”:
8.
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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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RJK1562DJE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1889-0100
Rev.1.00
Jan 07, 2010
Features
• Capable of 2.5 V gate drive
• Low on-resistance
RDS(on) = 1.2 Ω typ. (at ID = 0.5 A, VGS = 2.5 V, Ta = 25°C)
• Low drive current
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
32
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by maximum safe operation area
2. PW ≤ 10 μs, duty cycle ≤ 1%
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 1 of 6
Symbol
VDSS
VGSS
ID Note1
ID (pulse) Note2
IDR
IDR Note2
Pch
θch-a
Ratings
150
±10
1
4
1
4
0.9
139
Unit
V
V
A
A
A
A
W
°C/W
Tch
Tstg
150
–55 to +150
°C
°C
RJK1562DJE
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
Min
Typ
Max
Unit
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
150
±10
—
—
0.5
—
—
—
—
—
—
—
1.2
1.2
—
—
1
±10
1.5
1.4
1.6
V
V
μA
μA
V
Ω
Ω
ID = 10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VDS = 150 V, VGS = 0
VGS = ±10 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VGS = 4 V Note3
ID = 0.5 A, VGS = 2.5 V Note3
—
—
—
—
—
—
—
—
—
—
—
—
300
18
4.4
6
11
16
78
3.0
0.5
1.2
0.84
42
—
—
—
—
—
—
—
—
—
—
1.30
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
VDS = 25 V
VGS = 0
f = 1 MHz
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Notes: 3. Pulse test
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 2 of 6
Test conditions
ID = 0.5 A
VGS = 4 V
RL = 160 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 4 V
ID = 1 A
IF = 1 A, VGS = 0 Note3
IF = 1 A, VGS = 0
diF/dt = 100 A/μs
RJK1562DJE
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
5
Drain Current ID (A)
µs
µs
10
1
=
10
0
0.1
Operation in this
area is limited by
RDS(on)
0.01
1
100
2
1.7 V
1.6 V
1
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
1
Tc = 75°C
25°C
0.1
−25°C
0
1
2
3
4
Gate to Source Cutoff Voltage VGS(off) (V)
Drain to Source Voltage VDS (V)
2.0
1 mA
1.2
0.8
0.1 mA
0.4
0
-25
1
0.1
0.1
1
Drain Current ID (A)
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 3 of 6
10
0
25
50
75
100 125 150
Tc (°C)
Static Drain to Source on State Resistance
vs. Drain Current (Typical) (2)
Drain to Source on State Resistance
RDS(on) (Ω)
VGS = 4 V
Ta = 25°C
Pulse Test
ID = 10 mA
Case Temperature
Static Drain to Source on State Resistance
vs. Drain Current (Typical) (1)
10
VDS = 10 V
1.6
Gate to Source Voltage VGS (V)
Drain to Source on State Resistance
RDS(on) (Ω)
2 V 1.9 V
1.8 V
1000
VDS = 10 V
Pulse Test
Drain Current ID (A)
5 V, 10 V
3
0
10
10
0.01
4
VGS = 1.5 V
Ta = 25°C
1 shot
0.001
0.1
Ta = 25°C
Pulse Test
PW
Drain Current ID (A)
10
10
VGS = 2.5 V
Ta = 25°C
Pulse Test
1
0.1
0.1
1
Drain Current ID (A)
10
Static Drain to Source on State Resistance
vs. Temperature (Typical) (1)
Static Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
RDS(on) (Ω)
RJK1562DJE
8
VGS = 4 V
7 Pulse Test
6
5
ID = 3 A
4
2A
3
2
1
0.5 A
0
-25
0
25
50
75
1A
100 125 150
Static Drain to Source on State Resistance
vs. Temperature (Typical) (2)
8
VGS = 2.5 V
7 Pulse Test
6
5
ID = 3 A
4
2A
3
2
1
0.5 A
0
-25
Case Temperature Tc (°C)
50
75
100 125 150
Typical Capacitance vs.
Drain to Source Voltage
1000
100
Capacitance C (pF)
Ciss
10
100
Coss
10
Crss
1
VGS = 0
f = 1 MHz
Ta = 25°C
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
0.1
1
0.1
1
0
10
25
50
75
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
8
ID = 1 A
Ta = 25 °C
VGS
VDS
120
VDD = 30 V
60 V
120 V
80
6
4
40
2
VDD =120 V
60 V
30 V
0
0
0.8
1.6
2.4
Gate Charge Qg (nC)
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 4 of 6
0
3.2
4
Reverse Drain Current IDR (A)
160
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
25
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time (Typical)
Drain to Source Voltage VDS (V)
0
1A
VGS = 0
Ta = 25 °C
Pulse Test
3
2
1
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γ s (t)
RJK1562DJE
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
θch – a (t) = γ s (t) • θch – a
0.1
0.1
θch – a = 139°C/W, Ta = 25°C
0.05
D=
PDM
0.02
PW
T
0.01
ulse
ot p
1sh
0.01
10 µ
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
4V
Vin
Vout
10%
10%
10%
VDD
= 80 V
90%
td(on)
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 5 of 6
tr
90%
td(off)
tf
RJK1562DJE
Package Dimensions
Package Name
TO-92 Mod
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Previous Code
TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Part No.
RJK1562DJE-00-Z0
Note:
Quantity
Shipping Container
Hold Box, Radial Taping
2500 pcs
Leads forming applied as following figure.
Unit: mm
9.0
18.0
19.0
16.0
28.0 max.
12.7
2.5 2.5
6.35
12.7
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 6 of 6
4.0
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2010. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2