AM29DL800B datasheet

Am29DL800B
Data Sheet (Retired Product)
Am29DL800B Cover Sheet
This product has been retired and is not recommended for designs. For new and current designs please contact your
Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21519
Revision C
Amendment 5
Issue Date March 17, 2009
Da ta
Shee t
(Retire d
Pro duct)
This page left intentionally blank.
2
Am29DL800B
21519_C5 March 17, 2009
DATA SHEET
Am29DL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
This product has been retired and is not recommended for designs. For new and current designs please contact your Spansion representative
for alternates. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
— Host system can program or erase in one bank,
then immediately and simultaneously read from
the other bank
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
■ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
■ Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29DL800 device
■ High performance
— Access times as fast as 70 ns
■ Low current consumption (typical values
at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-whileerase current
— 17 mA active program-while-erase-suspended
current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard tCE chip enable access time applies to
transition from automatic sleep mode to active mode
■ Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
fourteen 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
fourteen 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Sector protection
— Hardware method of locking a sector to prevent
any program or erase operation within that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ Minimum 1,000,000 program/erase cycles
guaranteed per sector
■ Package options
— 44-pin SO
— 48-pin TSOP
— 48-ball FBGA
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— Superior inadvertent write protection
■ Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— No need to suspend if sector is in the other bank
■ Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
Publication# 21519 Rev: C Amendment: 5
Issue Date: March 17, 2009
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29DL800B is an 8 Mbit, 3.0 volt-only flash
memory device, organized as 524,288 words or
1,048,576 bytes. The device is offered in 44-pin SO,
48-pin TSOP, and 48-ball FBGA packages. The wordwide (x16) data appears on DQ0–DQ15; the byte-wide
(x8) data appears on DQ0–DQ7. This device requires
only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM
programmer can also be used to program and erase
the device.
This device is manufactured using AMD’s 0.35 µm process technology, and offers all the features and
benefits of the Am29DL800, which was manufactured
using a 0.5 µm technology.
The standard device offers access times of 70, 90, and
120 ns, allowing high-speed microprocessors to operate without wait states. Standard control pins—chip
enable (CE#), write enable (WE#), and output enable
(OE#)—control read and write operations, and avoid
bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space
into two banks. Bank 1 contains eight boot/parameter
sectors, and Bank 2 consists of fourteen larger, code
sectors of uniform size. The device can improve overall
system performance by allowing a host system to program or erase in one bank, then immediately and
simultaneously read from the other bank, with zero latency. This releases the system from waiting for the
completion of program or erase operations.
Am29DL800B Features
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state
machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and
data needed for the programming and erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
2
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device automatically returns to
reading array data.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of the sectors of memory. This can be
achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector within that bank that is
not selected for erasure. True background erase can
thus be achieved. There is no need to suspend the
erase operation if the read data is in the other bank.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device to reading array data, enabling the system microprocessor to read the boot-up firmware from
the Flash memory.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h i g h e s t l eve l s o f q u a l i t y, r e l i a b i l i t y, a n d c o s t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte or word
at a time using hot electron injection.
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package .................... 6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29DL800B Device Bus Operations ................................9
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences .............................. 9
Simultaneous Read/Write Operations with Zero Latency ....... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 11
Output Disable Mode .............................................................. 11
Table 2. Am29DL800BT Top Boot Sector Architecture ..................12
Table 3. Am29DL800BB Bottom Boot Sector Architecture .............13
Autoselect Mode ..................................................................... 13
Table 4. Am29DL800B Autoselect Codes (High Voltage Method) ..14
Sector Protection/Unprotection ............................................... 14
Temporary Sector Unprotect .................................................. 14
Figure 1. Temporary Sector Unprotect Operation........................... 14
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 15
Hardware Data Protection ...................................................... 16
Command Definitions . . . . . . . . . . . . . . . . . . . . . 16
Reading Array Data ................................................................ 16
Reset Command ..................................................................... 16
Autoselect Command Sequence ............................................ 16
Byte/Word Program Command Sequence ............................. 17
Figure 3. Program Operation .......................................................... 18
Chip Erase Command Sequence ........................................... 18
Sector Erase Command Sequence ........................................ 18
Erase Suspend/Erase Resume Commands ........................... 19
Figure 4. Erase Operation............................................................... 19
Command Definitions ............................................................. 20
Table 5. Am29DL800B Command Definitions ................................20
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 21
DQ7: Data# Polling ................................................................. 21
Figure 5. Data# Polling Algorithm ................................................... 21
RY/BY#: Ready/Busy# ........................................................... 22
DQ6: Toggle Bit I .................................................................... 22
DQ2: Toggle Bit II ................................................................... 22
March 17, 2009 21519C5
Reading Toggle Bits DQ6/DQ2 ............................................... 22
Figure 6. Toggle Bit Algorithm........................................................ 23
DQ5: Exceeded Timing Limits ................................................ 23
DQ3: Sector Erase Timer ....................................................... 23
Table 6. Write Operation Status ......................................................24
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 25
Figure 7. Maximum Negative Overshoot Waveform ..................... 25
Figure 8. Maximum Positive Overshoot Waveform....................... 25
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 25
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic
Sleep Currents) .............................................................................. 27
Figure 10. Typical ICC1 vs. Frequency ........................................... 27
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 11. Test Setup.................................................................... 28
Table 7. Test Specifications ........................................................... 28
Key to Switching Waveforms . . . . . . . . . . . . . . . 28
Figure 12. Input Waveforms and Measurement Levels ................. 28
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 13. Read Operation Timings ...............................................
Figure 14. Reset Timings ...............................................................
Figure 15. BYTE# Timings for Read Operations............................
Figure 16. BYTE# Timings for Write Operations............................
29
30
31
31
Erase and Program Operations .............................................. 32
Figure 17. Program Operation Timings..........................................
Figure 18. Chip/Sector Erase Operation Timings ..........................
Figure 19. Back-to-Back Read/Write Cycle Timings ......................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6.................................................................
Figure 23. Temporary Sector Unprotect Timing Diagram ..............
Figure 24. Sector Protect/Unprotect Timing Diagram ....................
33
33
34
34
35
35
36
36
Alternate CE# Controlled Erase/Program Operations ............ 37
Figure 25. Alternate CE# Controlled Erase/Program
Operation Timings.......................................................................... 38
Erase and Programming Performance . . . . . . . 39
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 39
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 39
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 40
TS 048—48-Pin Standard TSOP ............................................ 40
FBB048 —48-Ball Fine-Pitch Ball Grid Array (FBGA),
6 x 9 mm package .................................................................. 41
SO 044—44-Pin Small Outline .............................................. 42
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 43
Am29DL800B
3
D A T A
S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Option
Am29DL800B
Full Voltage Range: VCC = 2.7 – 3.6 V
70
90
120
Max Access Time (ns)
70
90
120
CE# Access (ns)
70
90
120
OE# Access (ns)
30
35
50
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
RY/BY#
X-Decoder
A0–A18
RESET#
WE#
CE#
BYTE#
Upper Bank
DQ0–DQ15
A0–A18
Y-Decoder
Upper Bank Address
A0–A18
Latches and Control Logic
OE# BYTE#
VCC
VSS
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ0–DQ15
Control
Lower Bank Address
Lower Bank
Latches and
Control Logic
A0–A18
Y-Decoder
A0–A18
X-Decoder
DQ0–DQ15
DQ0–DQ15
OE# BYTE#
4
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
March 17, 2009 21519C5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
Am29DL800B
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
5
D A T A
S H E E T
CONNECTION DIAGRAMS
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
SO
RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
48-Ball FBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
NC
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
A18
NC
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory products
in FBGA packages.
6
F6
G6
BYTE# DQ15/A-1
H6
VSS
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
Am29DL800B
21519C5 March 17, 2009
D A T A
PIN DESCRIPTION
A0-A18
S H E E T
LOGIC SYMBOL
= 19 Addresses
19
DQ0-DQ14 = 15 Data Inputs/Outputs
A0–A18
DQ15/A-1 = DQ15 (Data Input/Output, word mode),
A-1 (LSB Address Input, byte mode)
DQ0–DQ15
(A-1)
CE#
= Chip Enable
OE#
= Output Enable
CE#
WE#
= Write Enable
OE#
BYTE#
= Selects 8-bit or 16-bit mode
RESET#
= Hardware Reset Pin, Active Low
RY/BY#
= Ready/Busy Output
WE#
RESET#
BYTE#
VCC = 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
= Device Ground
NC
= Pin Not Connected Internally
March 17, 2009 21519C5
16 or 8
Am29DL800B
RY/BY#
7
D A T A
S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
Am29DL800B
T
70
E
I
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
D
= Commercial (0°C to +70°C) with Pb-Free package
I
= Industrial (–40°C to +85°C)
F
= Industrial (–40°C to +85°C) with Pb-Free package
E
= Extended (–55°C to +125°C)
K
= Extended (–55°C to +125°C) with Pb-Free package
PACKAGE TYPE
E
= 48-Pin Thin Small Outline Package
(TSOP) Standard Pinout (TS 048)
S
= 44-Pin Small Outline Package (SO 044)
WB
= 48-Ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 9 mm package (FBB048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29DL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations for TSOP and SO Packages
AM29DL800BT70,
AM29DL800BB70
Valid Combinations for FBGA Packages
EC, EI, ED, EF
SC, SI, SD, SF
AM29DL800BT90,
AM29DL800BB90
AM29DL800BT120,
AM29DL800BB120
Order Number
AM29DL800BT70,
AM29DL800BB70
EC, EI, EE, ED, EF, EK
SC, SI, SE, SD, SF, SK
AM29DL800BT90,
AM29DL800BB90
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
8
AM29DL800BT120,
AM29DL800BB120
Am29DL800B
Package Marking
WBC,
WBI,
WBD,
WBF
WBC,
WBI,
WBE,
WBD,
WBF,
WBK
D800BT70V,
D800BB70V
C, I,
D, F
D800BT90V,
D800BB90V
D800BT12V,
D800BB12V
C, I, E,
D, F, K
21519C5 March 17, 2009
D A T A
S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memor y
location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29DL800B Device Bus Operations
DQ8–DQ15
Operation
CE#
OE# WE# RESET#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
AIN
DOUT
DOUT
Write
L
H
L
H
AIN
DIN
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
X
X
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
X
X
Temporary Sector Unprotect
X
X
X
VID
AIN
DIN
DIN
High-Z
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-15 are active and controlled by CE#
and OE# .
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE# should
remain at VIH. The BYTE# pin determines whether the
device outputs array data in words or bytes.
March 17, 2009 21519C5
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the
device data outputs. Each bank remains enabled for
read access until the command register contents are
altered.
See “Reading Array Data” for more information. Refer
to the AC Read-Only Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1
in the DC Characteristics table represents the active
current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
Am29DL800B
9
D A T A
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
“Byte/Word Program Command Sequence” section
has details on programming data to the device using
b o t h s t a n d a r d a n d U n l o ck B y p a s s c o m m a n d
sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. The device
address space is divided into two banks: Bank 1 contains the boot/parameter sectors, and Bank 2 contains
the larger, code sectors of uniform size. A “bank address” is the address bits required to uniquely select a
bank. Similarly, a “sector address” is the address bits
required to uniquely select a sector.
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Autoselect Mode and Autoselect
Command Sequence sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification tables and timing diagrams for write operations.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank of
memory while programming or erasing in the other
bank of memory. An erase operation may also be sus-
10
S H E E T
pended to read from or program to another location
within the same bank (except the sector being erased).
Figure 19 shows how read and write cycles may be initiated for simultaneous operation with zero latency.
ICC6 and ICC7 in the DC Characteristics table represent
the current specifications for read-while-program and
read-while-erase, respectively.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires
standard access time (tCE) for read access when the
device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. ICC4 in the DC
Characteristics table represents the automatic sleep
mode current specification.
Am29DL800B
21519C5 March 17, 2009
D A T A
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all read/
write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to
reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept
another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
March 17, 2009 21519C5
S H E E T
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data t RH after the
RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Am29DL800B
11
D A T A
Table 2.
S H E E T
Am29DL800BT Top Boot Sector Architecture
Sector Address
Sector
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
0
X
X
X
64/32
00000h–0FFFFh
00000h–07FFFh
SA1
0
0
0
1
X
X
X
64/32
10000h–1FFFFh
08000h–0FFFFh
SA2
0
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA3
0
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA4
0
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA5
0
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA6
0
1
1
0
X
X
X
64/32
60000h–6FFFFh
30000h–37FFFh
SA7
0
1
1
1
X
X
X
64/32
70000h–7FFFFh
38000h–3FFFFh
SA8
1
0
0
0
X
X
X
64/32
80000h–8FFFFh
40000h–47FFFh
SA9
1
0
0
1
X
X
X
64/32
90000h–9FFFFh
48000h–4FFFFh
SA10
1
0
1
0
X
X
X
64/32
A0000h–AFFFFh
50000h–57FFFh
SA11
1
0
1
1
X
X
X
64/32
B0000h–BFFFFh
58000h–5FFFFh
SA12
1
1
0
0
X
X
X
64/32
C0000h–CFFFFh
60000h–67FFFh
SA13
1
1
0
1
X
X
X
64/32
D0000h–DFFFFh
68000h–6FFFFh
SA14
1
1
1
0
0
0
X
16/8
E0000h–E3FFFh
70000h–71FFFh
0
1
X
SA15
1
1
1
0
32/16
1
0
X
E4000h–E7FFFh,
E8000h–EBFFFh
72000h–73FFFh
74000h–75FFFh
Bank Address
Bank
(x8)
Address Range
(x16)
Address Range
Bank 2
SA16
1
1
1
0
1
1
0
8/4
EC000h–EDFFFh
76000h–76FFFh
SA17
1
1
1
0
1
1
1
8/4
EE000h–EFFFFh
77000h–77FFFh
SA18
1
1
1
1
0
0
0
8/4
F0000h–F1FFFh
78000h–78FFFh
SA19
1
1
1
1
0
0
1
8/4
F2000h–F3FFFh
79000h–79FFFh
0
1
X
SA20
1
1
1
1
32/16
1
0
X
F4000h–F7FFFh,
F8000h–FBFFFh
7A000h–7BFFFh
7C000h–7DFFFh
1
1
X
16/8
FC000h–FFFFFh
7E000h–7FFFFh
Bank 1
SA21
1
1
1
1
Note: The address range is A18:A-1 if in byte mode (BYTE# = VIL). The address range is A18:A0 if in word mode (BYTE# = VIH).
12
Am29DL800B
21519C5 March 17, 2009
D A T A
Table 3.
S H E E T
Am29DL800BB Bottom Boot Sector Architecture
Sector Address
Sector
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA21
1
1
1
1
X
X
X
64/32
F0000h–FFFFFh
78000h–7FFFFh
SA20
1
1
1
0
X
X
X
64/32
E0000h–EFFFFh
70000h–77FFFh
SA19
1
1
0
1
X
X
X
64/32
D0000h–DFFFFh
68000h–6FFFFh
SA18
1
1
0
0
X
X
X
64/32
C0000h–CFFFFh
60000h–67FFFh
SA17
1
0
1
1
X
X
X
64/32
B0000h–BFFFFh
58000h–5FFFFh
SA16
1
0
1
0
X
X
X
64/32
A0000h–AFFFFh
50000h–57FFFh
SA15
1
0
0
1
X
X
X
64/32
90000h–9FFFFh
48000h–4FFFFh
SA14
1
0
0
0
X
X
X
64/32
80000h–8FFFFh
40000h–47FFFh
SA13
0
1
1
1
X
X
X
64/32
70000h–7FFFFh
38000h–3FFFFh
SA12
0
1
1
0
X
X
X
64/32
60000h–6FFFFh
30000h–37FFFh
SA11
0
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA10
0
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA9
0
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA8
0
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA7
0
0
0
1
1
1
X
16/8
1C000h–1FFFFh
0E000h–0FFFFh
1
0
X
SA6
0
0
0
1
32/16
0
1
X
18000h–1BFFFh
14000h–17FFFh
0C000h–0DFFFh
0A000h–0BFFFh
Bank Address
Bank
(x8)
Address Range
(x16)
Address Range
Bank 2
SA5
0
0
0
1
0
0
1
8/4
12000h–13FFFh
09000h–09FFFh
SA4
0
0
0
1
0
0
0
8/4
10000h–11FFFh
08000h–08FFFh
SA3
0
0
0
0
1
1
1
8/4
0E000h–0FFFFh
07000h–07FFFh
SA2
0
0
0
0
1
1
0
8/4
0C000h–0DFFFh
06000h–06FFFh
1
0
X
SA1
0
0
0
0
32/16
0
1
X
08000h–0BFFFh,
04000h–07FFFh
04000h–05FFFh,
02000h–03FFFh,
0
0
X
16/8
00000h–03FFFh
00000h–01FFFh
Bank 1
SA0
0
0
0
0
Note: The address range is A18:A-1 if in byte mode (BYTE# = VIL). The address range is A18:A0 if in word mode (BYTE# = VIH).
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
March 17, 2009 21519C5
Table 4. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Tables 2 and 3). Table
4 shows the remaining address bits that are don’t care.
When all necessary bits have been set as required, the
programming equipment may then read the corresponding identifier code on DQ7-DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require VID. Refer to the Autoselect Command
Sequence section for more information.
Am29DL800B
13
D A T A
S H E E T
Table 4. Am29DL800B Autoselect Codes (High Voltage Method)
Description
Mode
Manufacturer ID: AMD
A18 A11
to
to
WE# A12 A10
CE#
OE#
L
L
H
L
L
H
Device ID:
Am29DL800B
(Top Boot Block)
Word
Byte
L
L
H
Device ID:
Am29DL800B
(Bottom Boot Block)
Word
L
L
H
Sector Protection Verification
L
L
L
L
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
X
01h
22h
4Ah
X
4Ah
22h
CBh
X
CBh
X
01h
(protected)
X
00h
(unprotected)
X
VID
X
L
X
L
L
BA
X
VID
X
L
X
L
H
VID
X
X
H
H
A6
A5
to
A2
BA
BA
Byte
A9
A8
to
A7
SA
X
VID
X
L
L
X
X
L
H
H
L
Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
SET# pin to VID (11.5 V – 12.5 V). During this mode,
formerly protected sectors can be programmed or
erased by selecting the sector addresses. Once VID is
removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the
algorithm, and Figure 23 shows the timing diagrams,
for this feature.
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This
method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unprotect write
cycle.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
The alternate method intended only for programming
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices. Publication number 21467 contains further details; contact
an AMD representative to request a copy.
RESET# = VIH
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
Temporary Sector
Unprotect Completed
(Note 2)
It is possible to determine whether a sector is protected
or unprotected. See the Autoselect Mode section for
details.
Notes:
1. All protected sectors unprotected.
Temporary Sector Unprotect
2. All previously protected sectors are protected once
again.
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
Figure 1.
14
Am29DL800B
Temporary Sector Unprotect Operation
21519C5 March 17, 2009
D A T A
S H E E T
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 μs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 μs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Reset
PLSCNT = 1
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
PLSCNT
= 1000?
Protect another
sector?
No
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Set up
next sector
address
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
March 17, 2009 21519C5
In-System Sector Protect/Unprotect Algorithms
Am29DL800B
15
D A T A
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 5 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets to reading array data. Subsequent writes
are ignored until VCC is greater than VLKO. The system
must provide the proper signals to the control pins to
S H E E T
prevent unintentional writes when VCC is greater than
VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 5 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence resets
the device to reading array data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the AC
Characteristics section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-suspendread mode, after which the system can read data from
any non-erase-suspended sector within the same
bank. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See the Erase
Suspend/Erase Resume Commands section for more
information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation,
or if the bank is in the autoselect mode. See the next
section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read parameters, and Figure 13 shows the timing diagram.
16
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to reading array data. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the reading array data.
If the program command sequence is written to a bank
that is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-suspend-read
mode. Once programming begins, however, the device
ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data. If a bank entered the autoselect mode while in the Erase Suspend
mode, writing the reset command returns that bank to
the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to reading
array data (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements. This
method is an alternative to that shown in Table 4, which
is intended for PROM programmers and requires VID
on address pin A9. The autoselect command sequence
may be written to an address within a bank that is either
in the read or erase-suspend-read mode. The autoselect command may not be written while the device is
actively programming or erasing in the other bank.
When the Embedded Program algorithm is complete,
that bank then returns to reading array data and addresses are no longer latched. The system can
determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Note that while the Embedded
Program operation is in progress, the system can read
data from the non-programming bank. Refer to the
Write Operation Status section for information on these
status bits.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The addressed bank then enters
the autoselect mode. The system may read at any address within the same bank any number of times
without initiating another autoselect command
sequence:
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should be
reinitiated once that bank has returned to reading array
data, to ensure data integrity.
■ A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
■ A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
■ A read cycle to an address containing a sector address (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h on
A6–A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. Refer to Tables
2 and 3 for valid sector addresses.
The system may continue to read array data from the
other bank while a bank is in the autoselect mode. To
exit the autoselect mode, the system must write the
reset command to return both banks to reading array
data. If a bank enters the autoselect mode while erase
suspended, a reset command returns that bank to the
erase-suspend-read mode. A subsequent Erase Resume command retur ns the bank to the erase
operation.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up command.
The program address and data are written next, which
in turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or timings. The device automatically generates the program
pulses and verifies the programmed cell margin. Table
5 shows the address and data requirements for the
byte program command sequence.
March 17, 2009 21519C5
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may cause
that bank to set DQ5 = 1, or cause the DQ7 and DQ6
status bits to indicate the operation was successful.
However, a succeeding read will show that the data is
still “0.” Only erase operations can convert a “0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock bypass command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. That
bank then enters the unlock bypass mode. A two-cycle
unlock bypass program command sequence is all that
is required to program in this mode. The first cycle in
this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 5 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need only
contain the data 00h. The bank then returns to reading
array data.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table
in the AC Characteristics section for parameters, and
Figure 17 for timing diagrams.
Am29DL800B
17
D A T A
S H E E T
occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array
data, to ensure data integrity.
START
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables
in the AC Characteristics section for parameters, and
Figure 18 section for timing diagrams.
Write Program
Command Sequence
Sector Erase Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 5 for program command sequence.
Figure 3.
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 5 shows the address
and data requirements for the sector erase command
sequence.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands within the bank may be written. Loading the
sector erase buffer may be done in any sequence, and
the number of sectors may be from one sector to all
sectors. The time between these additional cycles must
be less than 50 µs, otherwise the last address and
command may not be accepted, and erasure may begin. It is recommended that processor interrupts be
disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the
last Sector Erase command is written. Any command
other than Sector Erase or Erase Suspend during
the time-out period resets that bank to reading
array data. The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 (in the erasing bank) to
determine if the sector erase timer has timed out (See
the section on DQ3: Sector Erase Timer.). The time-out
begins from the rising edge of the final WE# pulse in
the command sequence.
When the Embedded Erase algorithm is complete, that
bank returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. Refer to the Write Operation Status section for
information on these status bits.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase
operation is in progress, the system can read data from
the non-erasing bank. The system can determine the
status of the erase operation by reading DQ7, DQ6,
DQ2, or RY/BY# in the erasing bank. Refer to the Write
Operation Status section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset im-
18
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
mediately terminates the erase operation. If that
occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables
in the AC Characteristics section for parameters, and
Figure 18 section for timing diagrams.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system
to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
START
Write Erase
Command Sequence
(Notes 1, 2)
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation.
However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
Data Poll to Erasing
Bank from System
No
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends”
all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7–DQ0. The system can use DQ7,
or DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to the
Write Operation Status section for information on these
status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just
as in the standard Byte Program operation. Refer to the
Write Operation Status section for more information.
March 17, 2009 21519C5
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 5 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Am29DL800B
Figure 4.
Erase Operation
19
D A T A
S H E E T
Command Definitions
Table 5.
Read (Note 6)
Reset (Note 7)
Autoselect (Note 8)
Manufacturer ID
Word
Byte
Device ID,
Top Boot Block
Word
Device ID,
Bottom Boot Block
Word
Byte
Byte
Addr
Data
1
RA
RD
1
XXX
F0
4
4
4
Word
Sector Protect Verify
(Note 9)
Program
Unlock Bypass
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence
(Note 1)
Am29DL800B Command Definitions
First
555
AAA
555
AAA
555
AAA
Second
AA
AA
AA
555
4
Addr
Data
2AA
555
2AA
555
2AA
555
55
55
55
2AA
AA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
55
AAA
555
(BA)AAA
Word
555
2AA
555
Byte
Word
Byte
4
3
AAA
555
AAA
AA
AA
555
2AA
555
55
55
2
XXX
A0
PA
PD
2
BA
90
XXX
00
Word
Byte
Word
Byte
6
6
555
AAA
555
AAA
AA
AA
Erase Suspend (Note 12)
1
BA
B0
Erase Resume (Note 13)
1
BA
30
2AA
555
2AA
555
55
55
AAA
555
AAA
555
AAA
555
AAA
Fifth
Addr
Data
90
(BA)X00
01
(BA)X01
224A
90
90
(BA)X02
4A
(BA)X01
22CB
(BA)X02
CB
(SA)
X02
XX00
(SA)
X04
00
PA
PD
90
Byte
Unlock Bypass Reset (Note 11)
Sector Erase
(BA)555
(BA)AAA
Fourth
Data
(BA)555
Unlock Bypass Program (Note 10)
Chip Erase
Third
Addr
A0
Sixth
Addr Data
Addr
Data
XX01
01
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A18–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect
mode, is in bypass mode, or is being erased. Address bits A18–A16
select a bank.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command
cycles.
5. Address bits A18–A11 are don’t cares for unlock and command
cycles, unless bank address (BA) is required.
6. No unlock or command cycles required when bank is in read
mode.
7. The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 is
goes high (while the bank is providing status information).
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer or device ID information.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See the Autoselect Command Sequence
section for more information.
10. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
11. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
12. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector
erase operation, and requires the bank address.
13. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
20
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation in the bank where a program or
erase operation is in progress: DQ2, DQ3, DQ5, DQ6,
DQ7, and RY/BY#. Table 6 and the following subsections describe the function of these bits. DQ7, RY/BY#,
and DQ6 each offer a method for determining whether
a program or erase operation is complete or in
progress. These three bits are discussed first.
invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
Table 6 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm. Figure 20
in the AC Characteristics section shows the Data# Polling timing diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase
algorithm is in progress or completed, or whether a
bank is in Erase Suspend. Data# Polling is valid after
the rising edge of the final WE# pulse in the command
sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to reading
array data.
DQ7 = Data?
No
No
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the
bank returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the
system reads DQ7 at an address within a protected
sector, the status may not be valid.
March 17, 2009 21519C5
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
valid data, the data outputs on DQ0–DQ6 may be still
Yes
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29DL800B
Figure 5.
Data# Polling Algorithm
21
D A T A
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data, is in the standby
mode, or one of the banks is in the erase-suspend-read
mode.
Table 6 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address within
the programming or erasing bank, and is valid after the
rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and
during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address within
the programming or erasing bank cause DQ6 to toggle.
The system may use either OE# or CE# to control the
read cycles. When the operation is complete, DQ6
stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When a bank is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When that bank enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
22
S H E E T
Table 6 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 21 in the
“AC Characteristics” section shows the toggle bit timing
diagrams. Figure 22 shows the differences between
DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 6 to compare outputs
for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 21 shows the toggle bit timing diagram. Figure
22 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system
must write the reset command to return to reading
array data.
Am29DL800B
21519C5 March 17, 2009
D A T A
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6).
START
S H E E T
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that
the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the timing limit has been
exceeded, DQ5 produces a “1”.
Under both these conditions, the system must write the
reset command to return to reading array data (or to the
erase-suspend-read mode if a bank was previously in
the erase-suspend-program mode).
Read DQ7–DQ0
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply
to the chip erase command.) If additional sectors are
selected for erasure, the entire time-out also applies
after each additional sector erase command. When the
time-out period is complete, DQ3 switches from a “0” to
a “1”. If the system can guarantee the time between additional sector erase commands to be less than 50 µs,
it need not monitor DQ3. See also the Sector Erase
Command Sequence section.
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1”, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0”, the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command.
If DQ3 is high on the second status check, the last command might not have been accepted.
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Table 6 shows the status of DQ3 relative to the other
status bits.
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 6.
March 17, 2009 21519C5
Toggle Bit Algorithm
Am29DL800B
23
D A T A
Table 6.
Status
Standard
Mode
Erase
Suspend
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase-SuspendRead
S H E E T
Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Erase-Suspend-Program
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
24
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
20 ns
–2.0 V
A9, OE#,
and RESET# (Note 2) . . . . . . . . . –0.5 V to +12.5 V
20 ns
All other pins
(Note 1) . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V
Figure 7. Maximum Negative
Overshoot Waveform
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot VSS to
–2.0 V for periods of up to 20 ns. Maximum DC voltage on
input or I/O pins is VCC +0.5 V. See Figure 7. During
voltage transitions, input or I/O pins may overshoot to VCC
+2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –2.0 V for periods of up to
20 ns. See Figure 7. Maximum DC input voltage on pin A9
is +12.5 V which may overshoot to 14.0 V for periods up
to 20 ns.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of
the device to absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for all devices . . . . . . . . . . . . . . . . . 2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
March 17, 2009 21519C5
Am29DL800B
25
D A T A
S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 1, 2)
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
7
12
1 MHz
2
4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
7
12
1 MHz
2
4
mA
ICC2
VCC Active Write Current
(Notes 2, 3)
CE# = VIL, OE# = VIH, WE# = VIL
15
30
mA
ICC3
VCC Standby Current (Note 2)
OE# = VIL;
CE#, RESET# = VCC ± 0.3 V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
VCC Active Read-WhileCE# = VIL,
Program Current (Notes 1, 2, 5) OE# = VIH
Byte
21
45
ICC6
Word
21
45
VCC Active Read-While-Erase
Current (Notes 1, 2, 5)
CE# = VIL,
OE# = VIH
Byte
21
45
ICC7
Word
21
45
ICC8
VCC Active Program-WhileErase-Suspended Current
(Notes 2, 5)
CE# = VIL,
OE# = VIH
17
35
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.0 V ± 10%
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
mA
mA
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
V
IOH = –100 µA, VCC = VCC min
VCC–0.4
V
Low VCC Lock-Out Voltage
(Note 5)
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5. Not 100% tested.
26
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
Supply Current in mA
8
3.6 V
6
2.7 V
4
2
0
1
2
3
Frequency in MHz
4
5
Note: T = 25 °C
Figure 10.
March 17, 2009 21519C5
Typical ICC1 vs. Frequency
Am29DL800B
27
D A T A
S H E E T
TEST CONDITIONS
Table 7.
Test Specifications
3.3 V
Test Condition
Output Load
2.7 kΩ
Device
Under
Test
70
30
Input Rise and Fall Times
6.2 kΩ
Figure 11.
100
pF
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
CL
90, 120
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 12.
28
Input Waveforms and Measurement Levels
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
JEDEC
Std
Description
Test Setup
70
90
120
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
70
90
120
ns
tAVQV
tACC
Address to Output Delay
CE#, OE# = VIL
Max
70
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
70
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
35
50
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Read
Min
0
ns
tOEH
Output Enable Hold
Time (Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 7 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13.
March 17, 2009 21519C5
Read Operation Timings
Am29DL800B
29
D A T A
S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14.
30
Reset Timings
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Std
Description
70
90
120
5
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
30
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
70
90
120
ns
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
mode
tELFL
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
Address
Input
DQ15
Output
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
Data Output
(DQ0–DQ7)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 15.
BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16.
March 17, 2009 21519C5
BYTE# Timings for Write Operations
Am29DL800B
31
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tASO
Address Setup Time to OE# low during toggle bit polling
Min
45
45
50
ns
tAH
Address Hold Time
Min
45
45
50
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
tOEPH
Output Enable High during toggle bit polling
Min
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Zero Latency Between Read and Write Operations
Min
0
ns
Byte
Typ
9
Word
Typ
11
tWLAX
70
90
120
Unit
70
90
120
ns
0
ns
0
35
45
ns
50
0
20
35
20
35
ns
ns
25
50
ns
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
µs
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
32
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Read Status Data (last two cycles)
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
DOUT
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode
Figure 17.
Program Operation Timings
tAS
tWC
2AAh
Addresses
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data(see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18.
March 17, 2009 21519C5
Chip/Sector Erase Operation Timings
Am29DL800B
33
D A T A
S H E E T
AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 19.
CE# Controlled Write Cycles
Back-to-Back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
34
Data# Polling Timings (During Embedded Algorithms)
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22. DQ2 vs. DQ6
March 17, 2009 21519C5
Am29DL800B
35
D A T A
S H E E T
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 V or 3 V
0 V or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23.
Temporary Sector Unprotect Timing Diagram
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
Valid*
Verify
60h
40h
Status
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 24.
36
Sector Protect/Unprotect Timing Diagram
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC
Std
Description
70
90
120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
Typ
9
tWHWH1
Programming Operation
(Note 2)
Byte
tWHWH1
Word
Typ
11
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
0
35
35
ns
50
ns
ns
µs
sec
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
March 17, 2009 21519C5
Am29DL800B
37
D A T A
S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data, DQ7# = complement of the data written to the device,
DOUT = data written to the device.
3. Waveforms are for the word mode.
Figure 25.
38
Alternate CE# Controlled Erase/Program Operation Timings
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Chip Erase Time
14
Excludes 00h programming
prior to erasure (Note 4)
Byte Program Time
9
300
µs
Word Program Time
11
360
µs
Byte Mode
9
27
Word Mode
5.8
17
Chip Program Time
(Note 3)
sec
Excludes system level
overhead (Note 5)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
March 17, 2009 21519C5
Am29DL800B
39
D A T A
S H E E T
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering
40
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
PHYSICAL DIMENSIONS (continued)
FBB048 —48-Ball Fine-Pitch Ball Grid Array (FBGA),
6 x 9 mm package
Dwg rev AF; 10/99
March 17, 2009 21519C5
Am29DL800B
41
D A T A
S H E E T
PHYSICAL DIMENSIONS (continued)
SO 044—44-Pin Small Outline
Dwg rev AC; 10/99
42
Am29DL800B
21519C5 March 17, 2009
D A T A
S H E E T
REVISION SUMMARY
Revision A (January 1998)
Revision A+4 (August 1998)
Initial release.
Ordering Information
Revision A+1 (January 1998)
Corrected description for E and F package type designators to 48-pin TSOP.
Reset Command
Deleted last paragraph in section, which applied to RESET#,
not the reset command.
Revision A+2 (Febrauary 1998)
AC Characteristics
Read Operations: Corrected tRC, tACC, tCE for 90 ns
speed option.
Hardware Reset (RESET#)
Figure 24, Sector Protection/Unprotection Timing
Diagram
Added note to table, fixed references to note.
Changed timing parameters to match those in Figure 2.
Revision A+3 (April 1998)
Revision B (January 1999)
Global
Connection Diagrams
Removed references to the 80 ns speed option.
Changed FBGA drawing to top view.
Changed the 70R ns (VCC ± 5%) speed option to the
70 ns (VCC ± 10%) speed option.
Ordering Information
Figure 2, In-System Sector Protect/Unprotect
Algorithms
Changed FBGA package reference to FBB048. Added
FBGA package markings to valid combinations table.
Revision B+1 (February 1999)
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sector?” back to setting up the next sector address.
DQ6: Toggle Bit I
Physical Dimensions
Corrected ball grid layout on FBB048.
Revision B+2 (July 2, 1999)
In the first and second paragraphs, clarified that the
toggle bit may be read “at any address within the programming or erasing bank,” not “at any address.” In the
fourth paragraph, clarified “device” to “bank.”
DC Characteristics
Added reference to Note 4 on ICC6 and ICC7 specifications.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the
notes reference for tWHWH1 and tWHWH2. These parameters are 100% tested. Corrected the note reference for
tVCS. This parameter is not 100% tested.
Test Conditions
Test Specifications table: Corrected to indicate that the
70 ns speed is tested at 30 pF loading.
Revision C (December 7, 1999)
AC Characteristics—Figure 17. Program
Operations Timing and Figure 18. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Temporary Sector Unprotect Table
Replaced figures with more detailed illustrations.
Added note reference for tVIDR. This parameter is not
100% tested.
Revision C+1 (November 21, 2000)
Figure 24, Sector Protect/Unprotect Timing
Diagram
Global
A valid address is not required for the first write cycle;
only the data 60h.
Ordering Information
Added table of contents.
Deleted burn-in option.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cycles.
March 17, 2009 21519C5
Am29DL800B
43
D A T A
S H E E T
Revision C+2 (June 7, 2000)
Revision C4 (December 4, 2006)
Ordering Information
Erase and Program Operations table
Added Pb-Free OPNs.
Changed tBUSY to a maximum specification.
Revision C+3 (January 5, 2006)
Revision C5 (February 26, 2009)
Global
Global
Removed TSR048 48-pin Reverse TSOP option.
Added obsolescence information.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products
Trademarks
Copyright ©2002-2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright © 2006-2009 Spansion Inc. All rights reserved. Spansion®, the Spansion Logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
ORNAND2™, HD-SIM™, EcoRAM™ and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names
used are for informational purposes only and may be trademarks of their respective owners.
44
Am29DL800B
21519C5 March 17, 2009