ROHM UDZSTE

Zener diode
UDZS8.2B
Dimensions (Unit : mm)
1.25±0.1
Land size figure (Unit : mm)
0.1±0.1
0.05
0.8MIN.
0.9MIN.
2.5±0.2
1.7±0.1
Features
1) Compact, 2-pin mini-mold type for
high-density mounting. (UMD2)
2) High reliability.
3) Can be mounted automatically,
using chip mounter.
2.1
Applications
Constant voltage control
UMD2
Construction
Silicon epitaxial planar
Structure
0.7±0.2
0.1
0.3±0.05
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
EX. UDZS3.6B
 Taping specifications (Unit : mm)
0.3±0.1
φ1.55±0.05
8.0±0.2
2.75
4.0±0.1
1.40±0.1
2.8±0.1
2.0±0.05
3.5±0.05 1.75±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Operating temperature
Symbol
P
Tj
Tstg
Topr
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c 2012 ROHM Co., Ltd. All rights reserved.
○
Limits
200
150
-55 to +150
-55 to +150
1/4
Unit
mW
℃
℃
℃
2012.02 - Rev.D
UDZS8.2B
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
TYP.
Zener voltage ：Vz(V)
Operating resistance ：Zz(Ω)
Rising operataing
resistance ：Zz(Ω)
Reverse current ：
IR(uA)
MIN.
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX. Iz(mA)
MAX.
UDZS 3.6B 3.600
3.845
5.0
100
5.0
1000
10.0
1.0
UDZS 3.9B 3.890
4.160
5.0
100
5.0
1000
5.0
1.0
UDZS 4.3B 4.170
5.0
5.0
5.0
4.430
100
1000
1.0
UDZS 4.7B 4.550
5.0
5.0
2.0
4.750
100
800
0.5
UDZS 5.1B 4.980
5.0
5.0
2.0
5.200
80
500
0.5
UDZS 5.6B 5.490
5.0
5.0
1.0
5.730
60
200
0.5
UDZS 6.2B 6.060
5.0
5.0
1.0
6.330
60
100
0.5
UDZS 6.8B 6.650
5.0
5.0
0.5
6.930
40
60
0.5
UDZS 7.5B 7.280
5.0
5.0
0.5
7.600
30
60
0.5
UDZS 8.2B 8.020
5.0
5.0
0.5
8.360
30
60
0.5
UDZS 9.1B 8.850
5.0
5.0
0.5
9.230
30
60
0.5
UDZS 10B
5.0
5.0
0.1
9.770
10.210
30
60
0.5
UDZS 11B 10.760
5.0
5.0
0.1
11.220
30
60
0.5
0.1
UDZS 12B 11.740
5.0
5.0
0.5
12.240
30
80
UDZS 13B 12.910
5.0
5.0
0.1
13.490
37
80
0.5
UDZS 15B 14.340
5.0
5.0
0.1
14.980
42
80
0.5
UDZS 16B 15.850
5.0
5.0
0.1
16.510
50
80
0.5
UDZS 18B 17.560
5.0
5.0
0.1
18.350
65
80
0.5
UDZS 20B 19.520
5.0
85
5.0
0.1
20.390
100
0.5
UDZS 22B 21.540
5.0
100
5.0
0.1
22.470
100
0.5
UDZS 24B 23.720
5.0
120
5.0
0.1
24.780
120
0.5
UDZS 27B 26.190
5.0
150
5.0
0.1
27.530
150
0.5
UDZS 30B 29.190
5.0
200
5.0
0.1
30.690
200
0.5
UDZS 33B 32.150
5.0
250
5.0
0.1
33.790
250
0.5
UDZS 36B 35.070
36.870
5.0
300
5.0
300
0.5
0.1
(１ )The zener voltage(Vz) is measured 40ms after power is supplied.
(２ )The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
Type No.
TYPE
UDZS　3.6B
UDZS　3.9B
UDZS　4.3B
UDZS　4.7B
UDZS　5.1B
UDZS　5.6B
UDZS　6.2B
UDZS　6.8B
UDZS　7.5B
UDZS　8.2B
UDZS　9.1B
UDZS　10B
UDZS　11B
TYPE　NO.
62
72
82
92
A2
C2
E2
F2
H2
J2
L2
05
15
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c 2012 ROHM Co., Ltd. All rights reserved.
○
TYPE
UDZS　12B
UDZS　13B
UDZS　15B
UDZS　16B
UDZS　18B
UDZS　20B
UDZS　22B
UDZS　24B
UDZS　27B
UDZS　30B
UDZS　33B
UDZS　36B
2/4
VR(V)
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
TYPE　NO.
25
35
45
55
65
75
85
95
A5
C5
E5
F5
2012.02 - Rev.D
UDZS8.2B
Data Sheet
Electrical characteristic curves (Ta=25C)
10
ZENER CURRENT:Iz(mA)
1
0.1
5.1
4.7
0.01
5.6
6.8
4.3
6.2
3.9
7.5
8.2 9.1
10
3.6
11 12 13 15
16
18
22
20
24
27
30
33
36
0.001
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
10000
REVERSE SURGE MAXIMUM
POWER:PRSM(W)
POWER DISSIPATION:Pd(mW)
250
150
100
50
0
25
50
75
100
125
150
t
100
10
1
0.1
0.001
0
AMBIENT TEMPERATURE:Ta(℃)
Pd-Ta　CHARACTERISTICS
0.01
0.1
1
10
100
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
0.12
40
0.1
35
0.08
30
1000
0.06
25
0.04
20
0.02
15
0
10
-0.02
-0.04
5
-0.06
0
-0.08
-5
0
10
20
30
ZENER VOLTAGE：Vz(V)
γz-Vz CHARACTERISTICS
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c 2012 ROHM Co., Ltd. All rights reserved.
○
40
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
TEMP.COEFFICIENCE:γz(mV/℃)
TEMP.COEFFICIENCE:γz(％/℃)
PRSM
1000
200
100
Rth(j-c)
10
Mounted on epoxy board
IM=10mA
IF=100mA
1
1ms
time
300us
0.1
0.001
3/4
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
2012.02 - Rev.D
UDZS8.2B
Data Sheet
100
Ta=125℃
100
10
f=1MHz
Ta=-25℃
Ta=75℃
0.1
Ta=125℃
0.01
0.001
1
Ta=25℃
0.1
0.01
10
Ta=-25℃
0.001
0.0001
7.5
8
8.5
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
9
1
1
2
3
4
5
0
29
0.9
Ta=25℃
IZ=5mA
n=30pcs
Ta=25℃
VR=5.0V
n=30pcs
0.8
REVERSE CURRENT:IR(nA)
8.4
8.3
8.2
8.1
AVE:8.206V
0.7
0.6
0.5
0.4
0.3
0.2
AVE:0.074nA
4
5
Ta=25℃
f=1MHz
VR=0V
n=10pcs
28
27
26
25
24
23
AVE:24.75pF
22
20
0
Vz DISPERSION MAP
3
21
0.1
8
2
30
1
8.5
1
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
7
ZENER VOLTAGE:Vz(Ｖ)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
Ta=75℃
REVERSE CURRENT:IR (nA)
ZENER CURRENT:Iz(mA)
10
Ta=25℃
IR DISPERSION MAP
Ct DISPERSION MAP
DYNAMIC IMPEDANCE:Zz(Ω)
1000
100
10
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
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c 2012 ROHM Co., Ltd. All rights reserved.
○
10
4/4
2012.02 - Rev.D
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1120A