Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 VM N2 3) High reliability zStructure 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra Small power mold type (VMN2) 2) Low VF 0.37±0.03 0.35±0.1 zStructure R O H M :V M N 2 dot (year w eek factory) + day Silicon epitaxial planer zTaping dimensions (Unit : mm) 2±0.05 0.7±0.05 2±0.05 φ1.55 0.2±0.05 8.0±0.2 1.1±0.05 3.5±0.05 1.75±0.1 4±0.1 φ0.5 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg zElectrical characteristic (Ta=25°C) Parameter 0.52 4.0±0.1 Limits Unit V mA mA 30 100 500 150 -40 to +150 °C °C Min. Typ. Max. Unit Forward vpltage Symbol VF - - 0.35 V Reverse current IR - - 10 µA www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=10mA VR=10V 2009.12 - Rev.B RB521CS-30 Data Sheet zElectrical characteristic curves 1000 100 10000 f=1MHｚ Ta=75°C 10 Ta=−25°C 1 Ta=25°C 0.1 0.01 0.001 1000 Ta=75°C 100 Ta=25°C 10 1 Ta=-25°C 0.1 0.01 100 200 300 400 500 600 10 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 30 0 280 270 260 AVE:270.2mV 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 20 30 Ta=25°C IF=10mA n=30pcs Ta=25°C VR=10V n=30pcs 25 REVERSE CURRENT:IR(uA) Ta=25℃ f=1MHz VR=0V n=10pcs 19 20 15 10 AVE:2.017uA 5 18 17 16 15 14 13 AVE:17.34pF 12 11 10 0 250 VF DISPERSION MAP IR DISPERSION MAP 20 Ct DISPERSION MAP 10 10 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 15 8.3ms 10 5 Ifsm 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) 20 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 300 290 10 1 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125°C 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125°C 8.3ms 1cyc 5 Ifsm t 5 AVE:3.90A 0 0 0 1 1 100 100 0.1 0.1 1000 10 TIME1:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP Rth(j-a) 0.08 0.08 Mounted on epoxy board 100 IM=10mA IF=100mA D=1/2 REVERSE POWER DISSIPATION:PR (W) Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) 10 DC 0.06 Sin(θ=180) 0.04 D=1/2 0.04 DC Sin(θ=180) 0.02 0.02 1ms tim 0.06 300us 10 0.001 0 0.01 0.1 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1000 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 2009.12 - Rev.B RB521CS-30 0.3 0A Io 0A Io 0V VR 0V VR t DC 0.2 T D=t/T VR=15V Tj=125°C D=1/2 0.1 Sin(θ=180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.3 Data Sheet t 0.2 DC T D=t/T VR=15V Tj=125°C D=1/2 0.1 Sin(θ=180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(°C) Derating Curve"(Io-Ta) www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 125 CASE TEMPARATURE : Tc(°C) Derating Curve"(Io-Tc) 2/3 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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