Preliminary Datasheet CR04AM-12A Thyristor Low Power Use R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Features IT (AV) : 0.4 A VDRM : 600 V IGT: 100 A Planar Type Outline RENESAS Package code: PRSS0003EA-A PRSS0003DE-A (Package name: TO-92*) (Package name: TO-92(3)) 2 1. Cathode 2. Anode 3. Gate 3 3 2 3 1 1 2 1 Applications Solid state relay, igniter, strobe flasher, circuit breaker, and general purpose control applications Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Non-repetitive peak reverse voltage VRSM DC reverse voltage VR(DC) Repetitive peak off-state voltage Note1 VDRM DC off-state voltage Note1 VD(DC) Notes: 1. With gate to cathode resistance RGK=1 k R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 8 CR04AM-12A Preliminary Parameter RMS on-state current Average on-state current Surge on-state current Symbol IT(RMS) IT(AV) Ratings 0.63 0.4 Unit A A ITSM 10 A I2 t 0.4 A2s PGM PG(AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.23 W W V V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180 conduction, Ta=54C 60Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 0.5 Unit mA Test conditions Tj = 125C, VRRM applied Repetitive peak off-state current IDRM — — 0.5 mA On-state voltage VTM — — 1.2 V Gate trigger voltage VGT — — 0.8 V Gate non-trigger voltage VGD 0.2 — — V Gate trigger current IGT 1 Note2 — 100Note2 μA Holding current Thermal resistance IH Rth(j-a) — — 1.5 — 3 150 mA C/W Tj = 125C, VDRM applied RGK=1 k Tj = 25C, ITM = 1.2 A instantaneous value Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Tj = 125C, VD = 1/2 VDRM RGK=1 K Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Tj = 25°C, VD = 12 V, RGK=1 k Junction to ambient Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 3. 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Page 2 of 8 CR04AM-12A Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 10 Surge On-State Current (A) 101 100 1 2 3 Gate Voltage (V) 2 101 102 Gate Trigger Current vs. Junction Temperature PGM = 0.5W VGT = 0.8V (Tj = 25°C) 100 PG(AV) = 0.1W IGT = 100μA (Tj = 25°C) IFGM = 0.3V VGD = 0.2V 10−1 100 101 102 × 100 (%) Gate Characteristics VFGM = 6V 103 Typical Example 102 101 100 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 Gate Trigger Voltage (V) 4 Conduction Time (Cycles at 60Hz) 101 10−2 10−2 6 On-State Voltage (V) 102 10−1 8 0 0 10 5 4 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10−1 0 Distribution 0.8 Typical Example 0.6 0.4 0.2 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Transient Thermal Impedance (°C/W) On-State Current (A) Ta = 25°C 100 103 101 102 103 10−2 10−1 100 102 101 100 −3 10 Time (s) Page 3 of 8 CR04AM-12A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 0.7 0.6 0.5 0.4 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 θ 120 360° 80 60 θ = 30° 40 90° 180° 60° 120° 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Resistive, inductive loads Natural convection 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 θ = 30° 90° 60° 120° 180° 0.7 0.6 0.5 0.4 0.3 0.2 θ θ 360° 0.1 0 Resistive loads 0 140 θ 120 θ 360° Resistive loads Natural convection 100 80 60 40 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 60° 90° 120° 0 180° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 90° 180° θ = 30° 60° 120° 270° DC 0.7 0.6 0.5 0.4 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Ambient Temperature (°C) 0.8 Average Power Dissipation (W) 140 Average On-State Current (A) 0.8 Average Power Dissipation (W) Ambient Temperature (°C) 160 60° 120° θ = 30° 90° 180° Ambient Temperature (°C) Average Power Dissipation (W) 0.8 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 40 20 0 θ = 30° 0 60° 120° 270° 90° 180° DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Page 4 of 8 CR04AM-12A Preliminary × 100 (%) Typical Example 140 120 100 80 60 40 20 RGK = 1kΩ 0 –40 160 0 40 120 80 160 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example 100 80 60 40 20 Tj = 125°C 0 10−1 100 101 102 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example Holding Current (mA) 140 101 Tj = 125°C RGK = 1kΩ 120 100 80 60 40 Distribution Typical Example IGT(25°C) = 35μA 100 10−1 20 0 0 10 101 102 RGK = 1kΩ 10−2 –40 –20 0 20 40 60 80 100 120 140 103 Rate of Rise of Off-State Voltage (V/μs) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Turn-On Time vs. Gate Current 102 600 Typical Example Typical Example 500 Turn-On Time (μs) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature 400 300 200 VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C 101 100 100 Tj = 125°C 0 −1 10 100 101 102 Gate to Cathode Resistance (kΩ) R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 10−1 −1 10 100 101 102 Gate Current (mA) Page 5 of 8 CR04AM-12A Preliminary 40 Turn-Off Time (μs) VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ 30 Typical Example 25 Distribution 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) Turn-Off Time vs. Junction Temperature Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –40 0 40 80 160 120 Junction Temperature (°C) × 100 (%) 104 Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example VD = 6V RL = 60Ω Ta = 25°C 102 101 0 10 101 102 103 Gate Current Pulse Width (μs) R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Page 6 of 8 CR04AM-12A Preliminary Package dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Package Name TO-92(3) JEITA Package Code SC-43A Previous Code TO-92(3)/TO-92(3)V RENESAS Code PRSS0003DE-A 4.8 ± 0.3 MASS[Typ.] 0.23g Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.42 Max 1.27 2.54 R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Page 7 of 8 CR04AM-12A Preliminary Ordering Information Orderable Part Number CR04AM-12A#B00 CR04AM-12A-B#B00 CR04AM-12A-A6#B00 CR04AM-12A-BA6#B00 CR04AM-12A-TB#B00 CR04AM-12A-BTB#B00 CR04AM-12A#B10 CR04AM-12A-B#B10 Packing Bag Bag Bag Bag Adhesive Tape Adhesive Tape Bag Bag Quantity 500 pcs. 500 pcs. 500 pcs. 500 pcs. 2000 pcs. 2000 pcs. 500 pcs. 500 pcs. Remark Straight Type, TO-92* Straight Type, TO-92*, IGT item:B A6 Lead form, TO-92* A6 Lead form, TO-92*, IGT item:B A8 Lead form, TO-92* A8 Lead form, TO-92*, IGT item:B Straight Type, TO-92(3) Straight Type, TO-92(3), IGT item:B Note : Please confirm the specification about the shipping in detail. R07DS0636EJ0100 Rev.1.00 Jan 16, 2012 Page 8 of 8 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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