DCR1910V85 Phase Control Thyristor DS5878-3 January 2014 (LN31256) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 8500V 1910A 25000A 1500V/µs 300A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR1910V85* DCR1910V80 DCR1910V75 DCR1910V70 Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 7000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. 0 0 * 8200V @ -40 C, 8500V @ 0 C ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1910V85 Outline type code: V (See Package Details for further information) Fig. 1 Package outline Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 1910 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 3000 A Continuous (direct) on-state current - 2975 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 25.0 kA VR = 0 3.125 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00746 °C/W Single side cooled Anode DC - 0.0130 °C/W Cathode DC - 0.0178 °C/W Double side - 0.002 °C/W - 0.004 °C/W - 125 °C Clamping force 54.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 48 59 kN 2/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 150 A/µs Gate source 30V, 10, Non-repetitive - 300 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 100A to1000A at Tcase = 125°C - 0.9 V Threshold voltage – High level 1000A to 7200A at Tcase = 125°C - 1.3 V On-state slope resistance – Low level 100A to 1000A at Tcase = 125°C - 0.888 m On-state slope resistance – High level 1000A to 7200A at Tcase = 125°C - 0.55 m VD = 67% VDRM, gate source 30V, 10 - 3 µs - 1200 µs 4800 8000 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 400 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 15 mA CURVES Instantaneous on-state current TI - (A) 7000 min 125°C max 125°C min 25°C max 25°C 6000 5000 4000 3000 2000 1000 0 0.0 2.0 4.0 6.0 Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.398265 B = 0.121095 C = 0.000524 D = -0.000007 these values are valid for Tj = 125°C for IT 500A to 7200A 4/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR 10 130 Maximum case temperature, Tcase ( o C ) Mean power dissipation - (kW) 9 8 7 6 5 4 180 120 90 60 30 3 2 1 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0 500 1000 1500 2000 0 2500 1000 2000 3000 Mean on-state current, I T(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 12 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 11 Mean power dissipation - (kW) Maximum heatsink temperature, THeatsink - (o C ) Fig.3 On-state power dissipation – sine wave 10 9 8 7 6 5 4 d.c. 180 120 90 60 30 3 2 10 1 0 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) 0 0 500 1000 1500 2000 2500 3000 3500 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR1910V85 130 130 d.c. 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 T sink -(o C) Maximum heatsink temperatureheat ,T -(° C) Maximum permissible case temperature case SEMICONDUCTOR d.c. 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 20 Double side cooled 18 Anode side cooled Thermal Impedance , Zth(j-c) - ( °C/kW) Ti (s) 16 14 12 Cathode side cooled 2 1.8299 3 3.4022 4 1.3044 0.0076807 0.0579454 0.4078613 1.2085 0.9032 1.6719 3.0101 7.4269 0.0075871 0.0536531 0.3144537 5.624 0.9478 2.0661 1.6884 13.0847 0.0078442 0.0645541 0.3894389 4.1447 Ri (°C/kW) Ti (s) Double Side Cooling Anode Side Cooling Cathode Sided Cooling 1 0.9206 Ri (°C/kW) Ri (°C/kW) Ti (s) Zth = [Ri x ( 1-exp. (t/ti))] [1] Rth(j-c) Conduction 10 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 8 Double side cooling Zth (z) 6 ° 180 120 90 60 30 15 4 2 0 0.001 0.01 0.1 1 10 sine. 1.34 1.57 1.83 2.08 2.27 2.36 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.34 1.57 1.84 2.08 2.28 2.37 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.33 1.57 1.83 2.07 2.26 2.35 rect. 0.88 1.29 1.53 1.80 2.10 2.26 100 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 30000 600 QSmax = 7040.5*(di/dt)0.4578 Reverse receovery current, IRR - (A) IRRmax = 63.4*(di/dt)0.6984 Stored Charge, Qs - (uC) 25000 20000 QSmin = 4916.3*(di/dt)0.5041 15000 Conditions: Tj = 125oC, VRpeak ~ 5100V VRM ~ 3400V 10000 snubber as appropriate to control reverse voltages 5000 500 400 300 IRRmin = 51.3*(di/dt)0.7453 Conditions: Tj = 125oC, VRpeak ~ 5100V VRM ~ 3400V snubber as appropriate to control reverse votages 200 100 0 0 0 0 5 10 15 20 25 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85 Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56 Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.16 Package outline 9/10 www.dynexsemi.com DCR1910V85 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Provisional Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Some initial development work has been performed. The datasheet represents a view of the end product based on very limited information. Certain details will change. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Dynex Semiconductor Ltd. CUSTOMER SERVICE Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Technical Documentation – Not for resale. 10/10 www.dynexsemi.com