16 3 Replaces DS5839-1.1 FEATURES ±0.2 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Cu Base With Al2O3 Substrates Lead Free Construction DS5839-2 July 2014 (LN31760) KEY PARAMETERS 6 x O7 VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 11.85 High ±0.2 Reliability Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM800DCS12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 28 ±0.5 1200V 2.2V screwing depth 800A max 8 1600A * Measured at the power busbars, not the auxiliary terminals APPLICATIONS 55.2 ± 0.3 IGBT Chopper Module 14 ±0.2 11.5 ±0.2 DIM800DCS12-A000 1(E) 2(C) 3(C) 4(E) 5(E) 6(G) 7(C) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM800DCS12-A000 Note: When ordering, please use the complete part number Outline type code: D (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM800DCS12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 1200 V ±20 V Continuous collector current Tcase = 85°C 800 A IC(PK) Peak collector current 1ms, Tcase = 115°C 1600 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 6940 W 100 kA s 225 kA s 2500 V 2 2 Diode I t value (IGBT arm) It VR = 0, tp = 10ms, Tj = 125ºC 2 Diode I t value (Diode arm) Visol Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage – per module 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: Al2O3 Baseplate material: Cu Creepage distance: 20mm Clearance: 10mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Rth(j-c) Thermal resistance – transistor (per arm) Thermal resistance – diode (IGBT arm) Rth(j-c) Rth(c-h) Tj Tstg Typ. Max Units - - 18 °C/kW - - 40 °C/kW Thermal resistance – diode (Diode arm) Continuous dissipation – junction to case Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 8 °C/kW Transistor - - 150 °C Diode - - 125 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm 27 Junction temperature Storage temperature range Screw torque 2/8 Continuous dissipation – junction to case Min - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Max Units VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 25 mA Gate leakage current VGE = ± 20V, VCE = 0V 4 μA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 5.5 6.5 V Collector-emitter saturation voltage VGE = 15V, IC = 800A 2.2 2.8 V VCE(sat) VGE = 15V, IC = 800A, TVJ = 125°C 2.6 3.2 V IF Diode forward current DC 800 A IFM Diode maximum forward current tp = 1ms 1600 A 2.1 2.4 V 1.8 2.1 V VF Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) 2.1 2.4 V 1.7 2.0 V ICES IGES Parameter Test Conditions Min Typ Collector cut-off current 4.5 IF = 800A IF = 800A, TVJ = 125°C Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 90 nF Qg Gate charge ±15V 9 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz LM Module inductance – per arm 20 nH RINT Internal transistor resistance – per arm 270 μ 4500 A nF Tj = 125°C, VCC = 900V SCData Short circuit current, ISC tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM800DCS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol td(off) tf Parameter Test Conditions Min Turn-off delay time IC = 800A Fall time Typ. Max Units 1250 ns 170 ns VGE = ±15V EOFF Turn-off energy loss VCE = 600V 130 mJ td(on) Turn-on delay time RG(ON) = 2.7 250 ns 250 ns 80 mJ 12 μC 570 A 60 mJ tr RG(OFF) = 2.7 Rise time LS ~ 100nH EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy Diode arm IF = 800A VCE = 600V dIF/dt = 4200A/μs Tcase = 125°C unless stated otherwise Parameter Symbol td(off) tf Test Conditions Turn-off delay time IC = 800A Fall time Min Typ. Max Units 1500 ns 200 ns VGE = ±15V EOFF Turn-off energy loss VCE = 600V 160 mJ td(on) Turn-on delay time RG(ON) = 2.7 400 ns 220 ns 120 mJ 240 μC 680 A 110 mJ tr RG(OFF) = 2.7 Rise time LS ~ 100nH EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy 4/8 Diode arm IF = 800A VCE = 600V dIF/dt = 4000A/μs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCS12-A000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM800DCS12-A000 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCS12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 130±0.5 114 ±0.1 29.2 ±0.5 57 ±0.25 57 ±0.25 screwing depth max 16 11.5 ±0.2 6 x M4 6 x Ø7 16 ±0.2 18 ±0.2 40 ±0.2 53 ±0.2 14 ±0.2 35 ±0.2 140 ±0.5 124 ±0.25 30 ±0.2 5.25±0.3 4 x M8 screwing depth max 8 44 ±0.2 57 ±0.2 55.2 ±0.3 11.85 ±0.2 1(E) 2(C) 3(C) 4(E) 5(E) +1.5 -0.0 6(G) 38 7(C) Nominal Weight: 1450g Module Outline Type Code: D Fig. 11 Module outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /8 DIM800DCS12-A000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Web: http://www.dynexsemi.com DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Email: [email protected] Dynex Semiconductor Ltd. 8/8 2005. Technical Documentation – Not for resale. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com