PS2711-1 - California Eastern Laboratories

PHOTOCOUPLER
PS2711-1
HIGH CTR
4-PIN SOP PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2711-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in a plastic SOP for high density applications.
The package is an SOP (Small Outline Package) type for high density mounting applications.
FEATURES
• High current transfer ratio (CTR = 200% TYP. @ IF = 1mA)
• High isolation voltage (BV = 3 750 Vr.m.s.)
PIN CONNECTION
(Top View)
• Small and thin package (4-pin SOP)
4
3
• Ordering number of tape product: PS2711-1-F3, F4
• Pb-free product
• Safety standards
1
2
1. Anode
2. Cathode
3. Emitter
4. Collector
• UL approved: File No. E72422
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
• Programmable logic controllers
• Small power supply
• Hybrid IC
• Modem/FAX
Document No. PN10246EJ03V0DS (3rd edition)
Date Published March 2006 CP(K)
The mark  shows major revised points.
© NEC Compound Semiconductor Devices, Ltd. 2000, 2006
PS2711-1
PACKAGE DIMENSIONS (UNIT: mm)
4±0.5
0.1±0.1
2.1±0.2
0.15 +0.10
–0.05
7.0±0.3
4.4
2.54
0.5±0.3
0.4 +0.10
–0.05
0.25 M
MARKING EXAMPLE
No. 1 pin Mark
2711
N601
Trade Mark
Type Number
Assembly Lot
*1
N 6 01
Week Assembled
Year Assembled
(Last 1 Digit)
CTR Rank Name
*1 Bar : Pb-Free
Remark "PS" and "-1" are omitted from original type number
2
Data Sheet PN10246EJ03V0DS
PS2711-1
ORDERING INFORMATION
Part Number
Order Number
PS2711-1
PS2711-1-A
PS2711-1-F3
PS2711-1-F3-A
PS2711-1-F4
PS2711-1-F4-A
PS2711-1-V
Solder Plating
Pb-Free
Safety Standard
Packing Style
Specification
Approval
Magazine case 100 pcs
Standard products
Embossed Tape 3 500 pcs/reel
(UL approved)
PS2711-1-V-A
Magazine case 100 pcs
DIN EN60747-5-2
PS2711-1-V-F3
PS2711-1-V-F3-A
Embossed Tape 3 500 pcs/reel
(VDE0884 Part2)
PS2711-1-V-F4
PS2711-1-V-F4-A
Application Part
*1
Number
PS2711-1
Approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = 25°C)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
∆PD/°C
0.8
mW/°C
PD
80
mW
IFP
0.5
A
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
5
V
IC
40
mA
∆PC/°C
1.5
mW/°C
PC
150
mW
BV
3 750
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
Diode
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 µs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10246EJ03V0DS
3
PS2711-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Transistor
Symbol
Conditions
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1 MHz
Collector to Emitter Dark
ICEO
IF = 0 mA, VCE = 40 V
CTR
IF = 1 mA, VCE = 5 V
MIN.
TYP.
MAX.
Unit
1.15
1.4
V
5
µA
30
pF
100
nA
400
%
0.3
V
Current
Coupled
Current Transfer Ratio
*1
(IC/IF)
Collector Saturation Voltage
VCE (sat)
RI-O
VI-O = 1 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1 MHz
Rise Time
tr
*2
Fall Time
VCC = 5 V, IC = 2 mA, RL = 100 Ω
tf
N : 100 to 400 (%)
K : 200 to 400 (%)
L : 150 to 300 (%)
M : 100 to 200 (%)
*2 Test circuit for switching time
Pulse Input
VCC
PW = 100 µ s
Duty cycle = 1/10
IF
In monitor
4
10
Ω
11
0.4
pF
4
µs
5
*1 CTR rank
VOUT
50 Ω
200
IF = 1 mA, IC = 0.2 mA
Isolation Resistance
*2
100
RL = 100 Ω
Data Sheet PN10246EJ03V0DS
PS2711-1
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
80
60
40
20
50
25
0
Forward Current IF (mA)
150
100
50
25
75
100
Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
TA = +100˚C
+60˚C
+25˚C
1
0˚C
–25˚C
–50˚C
0.1
0.01
0.0
0.5
1.0
1.5
2.0
1 000
VCE = 40 V
20 V
10 V
100
10
1
–25
0
25
50
75
100
Forward Voltage VF (V)
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
25
100
10 mA
5 mA
2 mA
IF = 10 mA
20
Collector Current IC (mA)
Collector Current IC (mA)
50
Ambient Temperature TA (˚C)
100
10
200
0
100
75
Collector to Emitter Dark Current ICEO (nA)
Diode Power Dissipation PD (mW)
100
5 mA
15
10
2 mA
5
1 mA
0.5 mA
0
2
4
6
8
10
10
1 mA
1
0.1
0.0
Collector to Emitter Voltage VCE (V)
IF = 0.5mA
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE(sat) (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PN10246EJ03V0DS
5
PS2711-1
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.6
500
1.4
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25˚C,
IF = 1 mA, VCE = 5 V
0.2
0.0
–50
0
–25
25
50
75
VCE = 5 V,
n=3
400
300
200
100
0
0.01
100
0.1
1
100
10
Ambient Temperature TA (˚C)
Forward Current IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
100
1 000
IC = 2 mA,
VCC = 5 V,
CTR = 200%
tf
IF = 1 mA,
VCC = 5 V,
CTR = 200%
Switching Time t (µs)
Switching Time t (µ s)
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
10
tf
tr
td
1
100
ts
tr
10
td
1
ts
0.1
10
100
0.1
100
10 k
1k
1k
10 k
100 k
Load Resistance RL (kΩ)
Load Resistance RL (kΩ)
FREQUENCY RESPONSE
LONG TERM CTR DEGRADATION
1.2
IF = 1 mA
1.0
–5
CTR (Relative Value)
Normalized Gain Gv
0
100 Ω
RL = 1 kΩ
–10
300 Ω
–15
TA = 25˚C
0.6
1
10
100
1 000
0
10
102
103
104
Time (Hr)
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
6
TA = 60˚C
0.4
0.2
–20
–25
0.1
0.8
Data Sheet PN10246EJ03V0DS
105
106
PS2711-1
TAPING SPECIFICATIONS (in millimeters)
1.55±0.1
2.9 MAX.
7.4±0.1
5.5±0.05
1.5+0.1
–0
12.0±0.2
2.0±0.05
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
2.4±0.1
4.6±0.1
0.3
8.0±0.1
Tape Direction
PS2711-1-F4
PS2711-1-F3
Outline and Dimension (Reel)
φ 21.0±0.8
φ 13.0±0.2
R 1.0
φ 100±1.0
2.0±0.5
φ13.0±0.2
φ 330±2.0
2.0±0.5
13.5±1.0
17.5±1.0
11.9 to 15.4
Outer edge of
flange
Packing: 3 500 pcs/reel
Data Sheet PN10246EJ03V0DS
7
PS2711-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
8
Data Sheet PN10246EJ03V0DS
PS2711-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10246EJ03V0DS
9
PS2711-1
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
• The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
10
Data Sheet PN10246EJ03V0DS
PS2711-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
Hong Kong Head Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Taipei Branch Office
FAX: +82-2-558-5209
TEL: +82-2-558-2120
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0504