PHOTOCOUPLER PS2703-1 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER Series− DESCRIPTION The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 3 750 Vr.m.s.) • High collector to emitter voltage (VCEO = 120 V) • SOP (Small Outline Package) type • Each isolated channel per package • High-speed switching (tr, tf = 10 µs TYP.) • Taping product number: PS2703-1-F3, F4 • Safety standards • UL approved: File No. E72422 • BSI approved: File No. 8219/8220 • CSA approved: File No. CA 101391 • DIN EN60747-5-2 (VDE0884 Part2) approved (Option) APPLICATIONS • Hybrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers • Power supply Document No. PN10242EJ02V0DS (2nd edition) Date Published March 2006 CP(K) The mark shows major revised points. © NEC Compound Semiconductor Devices, Ltd. 1988, 2006 PS2703-1 PACKAGE DIMENSIONS (in millimeters) PS2703-1 4.0±0.5 TOP VIEW 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.15 +0.10 –0.05 2.0 0.1±0.1 2.1.±0.2 7.0±0.3 4.4 2.54 0.5±0.3 0.4 +0.10 –0.05 0.25 M MARKING EXAMPLE No. 1 pin Mark 2703 M601 Trade Mark Type Number Assembly Lot *1 M 6 01 Week Assembled Year Assembled (Last 1 Digit) CTR Rank Name *1 Bar : Pb-Free Remark "PS" and "-1" are omitted from original type number 2 Data Sheet PN10242EJ02V0DS PS2703-1 ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Application Part Approval Number Specification PS2703-1 PS2703-1-A Pb-Free Magazine case 100 pcs Standard products PS2703-1-F3 PS2703-1-F3-A Embossed Tape 3 500 pcs/reel (UL, BSI, CSA PS2703-1-F4 PS2703-1-F4-A PS2703-1-V PS2703-1-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2703-1-V-F3 PS2703-1-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2) PS2703-1-V-F4 PS2703-1-V-F4-A *1 PS2703-1 approved) Approved (Option) *1 For the application of the Safety Standard, following part number should be used. Data Sheet PN10242EJ02V0DS 3 PS2703-1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ∆PD/°C 0.8 mW/°C PD 80 mW IFP 1 A Collector to Emitter Voltage VCEO 120 V Emitter to Collector Voltage VECO 6 V IC 30 mA ∆PC/°C 1.5 mW/°C PC 150 mW BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 µs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output Pins 1-2 shorted together, 3-4 shorted together. 4 Data Sheet PN10242EJ02V0DS PS2703-1 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz MIN. TYP. MAX. Unit 1.1 1.4 V 5 µA 30 Transistor Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 120 V Coupled Current Transfer Ratio CTR IF = 5 mA, VCE = 5 V 50 150 IF = 1 mA, VCE = 5 V 10 80 *1 (IC/IF) pF 100 nA 400 % 0.3 V Collector Saturation Voltage VCE (sat) Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 2 mA, RL = 1 kΩ 10 µs Rise Time Fall Time *2 tr *2 IF = 10 mA, IC = 2 mA tf 10 Ω 11 10 *1 CTR rank CTR rank CTR (%) Conditions K 200 to 400 IF = 5 mA, VCE = 5 V 80 to IF = 1 mA, VCE = 5 V 100 to 300 IF = 5 mA, VCE = 5 V 25 to IF = 1 mA, VCE = 5 V 50 to 150 IF = 5 mA, VCE = 5 V 10 to IF = 1 mA, VCE = 5 V L M *2 Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 In monitor 50 Ω VOUT RL = 1 kΩ Data Sheet PN10242EJ02V0DS 5 PS2703-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 75 50 25 25 0 50 75 200 150 1.5 mW/˚C 100 50 25 0 100 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 10 1 +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.1 0.01 0.6 0.8 1.0 1.2 1.4 4 mA 6 3 mA 4 2 mA 2 0 1 mA 0.5 mA 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 000 10 10 000 5 000 5 1 000 500 VCE = 40 V 24 V 10 V 100 50 10 5 1 0.5 0.1 –60 –40 –20 0 20 40 60 80 100 IF = 25 mA 10 mA 5 mA 2.5 mA 2 mA 1.5 mA 1 mA 1 0.5 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE (sat) (V) Ambient Temperature TA (˚C) Remark The graphs indicate nominal characteristics. 6 10 8 1.6 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) TA = +100 ˚C +75 ˚C +50 ˚C IF = 10 Collector Current IC (mA) Forward Current IF (mA) mA 5 mA Data Sheet PN10242EJ02V0DS 1.0 PS2703-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; 300 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0.0 –55 –25 0 25 50 75 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 250 200 150 100 50 0 0.1 100 0.5 1 5 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 100 50 1.2 VCC = 5V, IC = 2 mA tf 1.0 tr 10 Normalized Gain GV Switching Time t ( µ s) VCE = 5 V td ts 1 RL = 1 kΩ 510 Ω 300 Ω 100 Ω 0.8 0.6 0.4 0.2 0.1 10 100 0.0 0.5 10 k 1k 10 50 100 Frequency f (kHz) SWITCHING TIME vs. LOAD RESISTANCE LONG TIME CTR DEGRADATION 500 1.2 CTR Dgradation (Relative Value) IF = 5 mA, VCC = 5 V, CTR = 90 % Switching Time t ( µ s) 5 Load Resistance RL (Ω) 1 000 tf 100 ts 10 tr td 1 0.1 1 1 10 100 1.0 0.8 IF = 1 mA, TA = 25 ˚C IF = 5 mA, TA = 25 ˚C IF = 20 mA, TA = 25 ˚C IF = 20 mA, TA = 60 ˚C 0.6 0.4 0.2 0.0 1 102 103 104 105 106 Time (Hr) Load Resistance RL (kΩ) Remark The graphs indicate nominal characteristics. Data Sheet PN10242EJ02V0DS 7 PS2703-1 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.9 MAX. 7.4±0.1 5.5±0.05 1.5+0.1 –0 12.0±0.2 2.0±0.05 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 2.4±0.1 4.6±0.1 0.3 8.0±0.1 Tape Direction PS2703-1-F4 PS2703-1-F3 Outline and Dimensions (Reel) φ 21.0±0.8 φ 13.0±0.2 R 1.0 φ 100±1.0 2.0±0.5 φ13.0±0.2 φ 330±2.0 2.0±0.5 13.5±1.0 17.5±1.0 11.9 to 15.4 Outer edge of flange Packing: 3 500 pcs/reel 8 Data Sheet PN10242EJ02V0DS PS2703-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260˚C MAX. 220˚C to 60 s 180˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C. Data Sheet PN10242EJ02V0DS 9 PS2703-1 (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. 10 Data Sheet PN10242EJ02V0DS PS2703-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. IV for rated line voltages ≤ 600 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) UIORM 710 Vpeak Upr = 1.2 × UIORM, Pd < 5 pC Upr 850 Vpeak Test voltage (partial discharge test procedure b for all devices test) Upr 1 140 Vpeak UTR 6 000 Vpeak Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C Ris MIN. VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 12 Ω 11 10 Ω 10 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 150 °C Current (input current IF, Psi = 0) Isi 200 mA Power (output or total power dissipation) Psi 300 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) Data Sheet PN10242EJ02V0DS 9 Ω 11 PS2703-1 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 12 Data Sheet PN10242EJ02V0DS PS2703-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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