BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions (Unit : mm) zApplication Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3) 2) High speed. (trr=1.5ns Typ.) 3) Four types of circuit configurations are available. 0.45±0.1 0.95 0.95 (2) 0~0.1 2.4±0.2 1.3+0.2 −0.1 (1) 0.2Min. (3) 0.4 +0.1 −0.05 zConstruction Silicon epitaxial planar +0.1 0.15 −0.69 Each lead has same dimensions zMarking (Type No.) Product name Type No. BAV70 RA4 BAW56 RA1 BAV99 RA7 (Ex.) BAV70 RA4 zEquivalent circuits BAV70 BAW56 BAV99 1/3 BAV70 / BAW56 / BAV99 Diodes zAbsolute maximum ratings (Ta=25°C) Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) Mean rectifying current IF (mA) Surge current (1µs) Isurge (A) BAV70 75 70 450 215 4 300 150 −55 to +150 N BAW56 85 70 450 215 4 225 150 −55 to +150 P BAV99 85 75 450 215 4 300 150 −55 to +150 N Type Storage Power Junction dissipation temperature temperature (TOTAL) Tj (°C) Tstg (°C) Pd (mW) P / N Type zElectrical characteristics (Ta=25°C) Forward voltage Type VF (V) Max. BAV70 1.25 BAW56 BAV99 Capacitance between terminals Reverse current Cond. IF (mA) IR (µA) Max. 150 2.5 1.25 150 1.25 150 Cond. Cond. VR (V) CT (pF) Max. VR (V) 70 1.5 0 1.0 75 2.0 1.0 75 1.5 Reverse recovery time Cond. f (MHz) trr (ns) Max. VR (V) IF (mA) 1 4 10 10 0 1 4 10 10 0 1 4 10 10 zElectrical characteristic curves (Ta=25°C) 125 1000 Ta=100°C 100 75 50 25 REVERSE CURRENT : IR (nA) 20 FORWARD CURRENT : IF (mA) Ta=85°C 50°C 25°C 0°C −30°C 10 5 2 1 0.5 75°C 50°C 10 25°C 0°C 1 −25°C 0.1 0.2 0 0 25 50 75 100 125 0.1 150 0 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Power attenuation curve 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 REVERSE CURRENT : IR (nA) Ta=85°C 50°C 25°C 0°C −30°C 10 5 2 1 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 30 40 50 Fig.3 Reverse characteristics (P Type) Ta=100°C 75°C 100 50°C 10 25°C 0°C 1 −25°C 0.1 0.01 0 20 Fig.2 Forward characteristics (P Type) 0.2 0.1 10 0 REVERSE VOLTAGE : VR (V) 1000 20 0.01 FORWARD VOLTAGE : VF (V) 50 FORWARD CURRENT : IF (mA) 100 CAPACITANCE BETWEEN TERMINALS : CT (pF) POWER DISSIPATION : Pd / Pd Max. (%) 50 10 20 30 40 50 60 70 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics (N Type) Fig.5 Reverse characteristics (N Type) 80 f=1MHz 4 2 P Type N Type 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE : VR (V) Fig.6 Capacitance between terminals characteristics 2/3 BAV70 / BAW56 / BAV99 Diodes 10 0.01µF D.U.T 8 5Ω PULSE GENERATOR OUTPUT 50Ω 7 SAMPLING 50Ω OSCILLOSCOPE 6 5 4 P Type 3 INPUT 2 N Type 1 0 1 2 3 4 5 6 7 8 9 100ns 10 FORWARD CURRENT : IF (mA) OUTPUT trr Fig.7 Reverse recovery time 0 0.1IR 0 IR REVERSE RECOVERY TIME : trr (ns) VR=6V 9 Fig.8 Reverse recovery time (trr) measurement circuit 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0