Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE (Level 6) Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26 Rev 1.5 Update schematic Update transformer and BOM Update schematic Update transformer and BOM Page 3,5,7,9,11,13 Update demo board picture Page 9,10,11,12 Add ACT334 and ACT512 12V0.5A solutions Page 19,20,21,22 Add ACT410 and ACT411 solutions, update ACT410/411 standby power Cover Page Change Title Page 11,12 Add ACT413 5V2.4A solution Page 13,14 Add ACT512 5V2.4A solution Cover Page Change Title and List Table of Contents 1. ACT330 5V 1A Universal Charger for DOE standard…..……..…………………..………….…………………….………… .3 2. ACT334 5V 1A Universal Charger for DOE standard…..……..…………………..………….…………………….………… .5 3. ACT512 5V 2A Universal Adaptor for DOE standard…...………...…………………..………….………….…….……….… .7 4. ACT410 5V 2.1A Universal Adaptor for DOE standard………….……… …..…….…….…………………………..………..9 5. ACT413 5V 2.4A Universal Adaptor for DOE standard………….……… …..…….…….…………………………..………..11 6. ACT512 5V 2.4A Universal Adaptor for DOE standard………….………..…….…….…………………………..………..…..13 7. ACT512 5V 4A Universal Adaptor for DOE standard………….…………..…….…….…………………………..………..….15 8. ACT334 12V 0.5A Universal Adaptor for DOE standard …...…….………..……...….….…….………….…….…………….17 9. ACT512 12V 0.5A Universal Adaptor for DOE standard………….……….…….…..…..……..……………………..……….19 10. ACT411 12V 1A Universal Adaptor for DOE standard……… .…………..…….…….…………………………..………..…21 11. ACT512 12V 1A Universal Adaptor for DOE standard …...……...……..………..……...…….………….…….……………23 12. ACT513 12V 2A Universal Adaptor for DOE standard………….……….…….………..…..……………………..………….25 -2For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT330 5V/1A UNIVERSAL CHARGER FOR DOE SOLUTION Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT330 75.10% 38mW 5V 5W PSR flyback Key Features Demo Board Picture • Patented Primary Side Regulation Technology • Lowest total cost solution for cell phone charger using PWM IC • Universal input voltage range from 85 to 264 VAC • Accurate CV (5%) and CC (10%) performance • Adjustable up to 40kHz Switching Frequency • Integrated Output Cord Compensation • CV & CC correction for Input line, output DC cord and transformer inductance variation • No-load standby power < 0.05W • Exceed the latest DOE average efficiency requirement Normal size • No Y capacitor for EMI filter • Short circuit and over-voltage protection • Tiny SOT23-6 package. W*L*H=29mm*48.5mm*16mm Schematic Picture 1 -3For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials U1 DESCRIPTION IC, ACT330,SOT23-6 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V,1206,SMD POE C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm KSC C5 Capacitor, Solid, 470uF/10V, 8x12mm Capacitor, Electrolytic, 330uF/10V, 8x12mm KSC C9 Capacitor, Ceramic,1000pF/50V, 0805, SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark L1 Axial Inductor, 1.5mH, 0410,Dip P1 Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A Jintong FR1 Wire Round Resistor,1W,10 ohm, KNP, 5% TY-OHM R1 Chip Resistor, 22 ohm, 0603, 5% TY-OHM R2 Chip Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 470 ohm, 1206, 5% TY-OHM R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 60.4K ohm, 0805,1% TY-OHM R6 Chip Resistor, 10.2K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 5.1M ohm, 1206, 5% TY-OHM R9 Chip Resistor, 0.787 ohm, 1206,1% TY-OHM R10 Chip Resistor, 80K ohm, 0805, 5% TY-OHM R11 Chip Resistor, 2.2K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 10 ohm, 0805, 5% TY-OHM Finish 2 --> <-- SH1 P2 SH2 Wire Turn s <-1 5 S1 Amode Tech Q1 Sta rt --> Vishay PCB1 T1 Windi ng Rubcon C6 Diode, schottky, 40V/5A, SL540, DO-214AB,SMD Terminal MFTR Active-Semi. C1,C2 D8 Build up NC 8 10 3 5 4 3 Cor e 1 Insulation Type Size*QTY Laye r 47 2UE W 0.15Φ*1 1 0.025*8. 5W 1 47 2UE W 1 0.025*8. 5W 1 46 2UE W 1 0.025*8. 5W 2 1 0.025*8. 5W 2 1 0.025*8. 5W 2 0.15Φ*1 0.15Φ*1 8 2UE W 10 TEXE 14 1 0.15Φ*4 0.50Φ*1 2UE W 0.15Φ*2 2UE W 0.15Φ*1 Thick/ Wide Lay er 1 0.025*8. 5W 2 1 0.025*8. 5W 2 Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. ♦ Item Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 1.8mH±%7 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-5 and 8-10 shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) REF ♦ Transformer, Lp=1.8mH, EE16 60 50 40 30 20 10 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po Transformer Efficiency 80.00% 115V 78.00% 230V 76.00% 74.00% 72.00% 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT330_5V1A_DOE_Rev1.0 -4For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT334 5V/1A UNIVERSAL CHARGER FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT334 75.60% 39mW 5V 5W PSR flyback Key Features Demo Board Picture • Patented Primary Side Regulation Technology • Lowest total cost solution for cell phone charger using PWM IC • Universal input voltage range from 85 to 264 VAC • Accurate CV (5%) and CC (10%) performance • Adjustable up to 80kHz Switching Frequency • Integrated Output Cord Compensation • CV & CC correction for Input line, output DC cord and transformer inductance variation • No-load standby power < 0.05W • Exceed the latest DOE average efficiency requirement Mini size • No Y capacitor for EMI filter • Short circuit and over-voltage protection • Tiny SOT23-6 package. W*L*H=25.5mm*46.5mm*16mm Schematic Picture 2 -5For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials REF DESCRIPTION U1 IC, ACT334,SOT23-6 C1 Capacitor, Electrolytic, 4.7uF/400V, 8x12mm ♦ Build up Terminal MFTR Windi ng Active-Semi. KSC P1 C2 C3 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm Capacitor, Ceramic, 1000pF/500V,1206,SMD C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm C5 Capacitor, Solid, 470uF/10V, 8x12mm C6 Capacitor, Electrolytic, 330uF/10V, 8x12mm C9 Capacitor, Ceramic,1000pF/50V, 0805, SMD KSC SH1 Rubcon P2 POE SH2 D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D8 Diode, schottky, 40V/5A, SL540, DO-214AB,SMD L1 Axial Inductor, 1.5mH, 0410,Dip Q1 Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB1 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A Jintong FR1 Wire Round Resistor,1W,10 ohm,KNP, 5% TY-OHM R1 Chip Resistor, 22 ohm, 0603, 5% TY-OHM R2 Chip Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 470 ohm, 1206, 5% TY-OHM R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 68K ohm, 0805,1% TY-OHM R6 Chip Resistor, 11.8K ohm, 0805, 1% TY-OHM Chip Resistor, 10M ohm, 1206, 5% TY-OHM R9 Chip Resistor, 1 ohm, 1206,1% TY-OHM R10 Chip Resistor, 75K ohm, 0805, 5% TY-OHM R11 Chip Resistor, 3.3K ohm, 0805, 5% TY-OHM R13 T1 Chip Resistor, 10 ohm, 0805, 5% Wire Turn s <-1 NC 6 8 (5) 4 3 (5) Cor e 1 Insulation Type Size*QTY Laye r 38 2UE W 0.15Φ*1 1 0.025*8. 5W 1 38 2UE W 1 0.025*8. 5W 1 38 2UE W 1 0.025*8. 5W 2 1 0.025*8. 5W 2 1 0.025*8. 5W 2 0.15Φ*1 0.15Φ*1 7 2UE W 8 TEXE 11 1 0.15Φ*4 0.55Φ*1 2UE W 0.25Φ*2 2UE W 0.15Φ*1 Thick/ Wide Lay er 1 0.025*8. 5W 2 1 0.025*8. 5W 2 Note:1,Core and Bobbin:EE13 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. Vishay ♦ Amode Tech Item Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 1.5mH±%7 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-3 and 8-6 shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) R7,R8 --> 4 S1 KSC Good-Ark 2 --> POE Diode,Rectifier,1000V/1A,1N4007, DO-41 Finish <-- KSC D1-D4 Sta rt 60 50 40 30 20 10 0 90 115 230 264 Input Voltage (VAC) TY-OHM STANDBY POWER Transformer, Lp=1.5mH, EE13 Efficiency Vs Po Transformer Efficiency 80.00% 115V 78.00% 230V 76.00% 74.00% 72.00% 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT334_5V1A_DOE_Rev1.0 -6For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/2A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 80.30% 90mW 5V 10W CCM&QR flyback and overload protection. Key Features • Optimized CCM and advanced Quasi-Resonant • Tiny SOT23-6 package. operation. Demo Board Picture • Advanced burst mode operation enables low standby power of 100mW. • Frequency jetting and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. • Integrated patented line compensation, provide OCP/OLP protection. • Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. • Integrate comprehensive protection. In case of Normal size over temperature, over/under voltage, short winding, short current sense resistor, open loop W*L*H=38mm*38mm*22mm Schematic Picture 3 -7For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 10µF/400V, 10 × 14mm KSC C2 Capacitor, Electrolytic, 10µF/400V, 10 × 14mm POE C3 Capacitor, Solid, 470µF/16V, 8 × 11mm C4 Capacitor, Electrolytic,6.8µF/35V, SMD 0805 C5 Capacitor, Ceramic, 100PF/50V,0603,SMD POE C6 Capacitor, Ceramic,1000pF/50V,0603,SMD POE C7 Capacitor, Ceramic,100pF/10V,1812,SMD POE C0 Capacitor, Ceramic,100nF/100V,0603,SMD POE C13 Capacitor, Ceramic,1000pF/500V,0805,SMD POE Rubcon POE ♦ Build up Terminal D3 Dgate L1 Q1 PCB1 RS1M SMD Diode, Schottky, 60V/30A, SBR3060, DO-220 Diode L4148 SMD Axial Inductor, 1.5mH, 5*7, DIP Good-Ark Diodes PCB, L*W*T =38x38x1mm, Cem-1, Rev:A Jintong Fusible, 1A/250V TY-OHM R1 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R2 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R3 Chip Resistor, 4.7Ω, 0805, 5% TY-OHM R3B Chip Resistor, 22Ω, 0805, 5% TY-OHM R4 Chip Resistor,60.4kΩ, 0603, 1% TY-OHM R5 Chip Resistor,11kΩ, 0603, 1% TY-OHM R6 Chip Resistor, 10 Ω, 0603, 5% TY-OHM R7 Chip Resistor, 1kΩ,0603, 5% TY-OHM R8 Chip Resistor, 1KΩ, 0603, 5% TY-OHM R0 Chip Resistor, 3kΩ, 0603, 5% TY-OHM R9 Chip Resistor, 1.5Ω, 1206, 1% TY-OHM R10 Chip Resistor, 10.7kΩ, 0603, 1% TY-OHM R11 Chip Resistor, 10kΩ, 0603, 1% TY-OHM R12 Chip Resistor, 100Ω, 0805,5% TY-OHM R13 Chip Resistor,750kΩ, 0805,5% TY-OHM R14 Chip Resistor,360Ω, 0603, 5% TY-OHM Opto-coupler, PC817C CTR=200 SMD IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 SH1 3 NC 15 S1 B A 7 P2 4 3 17 P3 F 1 32 Type Thick/ Wide Layer 2UEW 0.18Φ*1 1 0.025*11W 2 2UEW 0.12Φ*3 1 0.025*11W 2UEW 0.45Φ*2 1 0.025*11W 2 2UEW 0.15Φ*2 1 0.025*11W 2 2UEW 0.18Φ*1 1 0.025*11W 2 Electrical specifications Item Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 1.3mH±%7 3 P1 Leakage Inductance Inductance between pins 3 with pins4and AB shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage 100 50 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po 90.00% RM6 Lm=1.3mH Y capacitance, 1000pF/400V,Y1 32 ♦ SoKa Infineon IC3 F La yer Good-Ark Mosfet Transisor, 04N65, TO-220 CY1 2 Insulation Size*QT Y Note:1,Core and Bobbin:RM6 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Good-Ark F1 L1 Finish P1 Standy Power (mW) D1,D2 MB6S 1.5A/400V Start Turn s Efficiency BD Wire Winding SEC Sharp 115V 85.00% 230V 80.00% 75.00% 70.00% ST 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(20AWG,1.8M,R=0.13Ω) EVALUATION KITS ACT512_5V2A_DOE_Rev1.0 -8For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT410 5V/2.1A UNIVERSAL CHARGER FOR DOE SOLUTION Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT410 80% 90mW 5V 10.5W PSR flyback Key Features Demo Board Picture • Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller • Lowest total cost solution for cell phone charger using PWM IC • Universal input voltage range from 85 to 264 VAC • Accurate CV (5%) and CC (15%) performance • Adjustable up to 110kHz Switching Frequency • Integrated Output Cord Compensation • CV & CC correction for Input line, output DC cord and transformer inductance variation • No-load standby power < 0.10W • Exceed the latest DOE average efficiency re- Normal size quirement W*L*H=21mm*40mm*10mm • Short circuit and over-voltage protection • Tiny SOT23-6 package. Schematic Picture 4 -9For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials ♦ REF DESCRIPTION MFTR U1 IC, ACT410,SOT23-6 Active-Semi. Build up Terminal Wire C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE P2 5 4 20 C9 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE P3 3 1 38 Typ e 2UE W 2UE W TEX -E 2UE W 2UE W C10 Capacitor, Ceramic, 200pF/100V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT 3 Cop per wire BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D2 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D3 Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes D5 Diode, 1N4148 SMD PANJIT L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa Q1 Mosfet Transistor, 4N65,TO-220 AUK PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R1,R4 Chip Resistor, 22 ohm, 0805, 5% C1,C2 Capacitor, Electrolytic, 10uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C6,C7 Capacitor, Electrolytic,10uF/35V,5x11mm Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm Start Finish P1 2 3 SH1 KSC KSC Chip Resistor, 68K ohm, 0805,1% TY-OHM R6 Chip Resistor, 11.5K ohm, 0805, 1% TY-OHM R7 Chip Resistor, 1M ohm, 0805 , 5% TY-OHM R8 Chip Resistor, 1M ohm, 0805 , 5% TY-OHM R9 Chip Resistor, 1.1ohm, 1206,1% TY-OHM R10 Chip Resistor, 240 ohm, 0805 , 5% TY-OHM R11 Chip Resistor, 3.0K ohm, 0805, 5% R12 Chip Resistor, 3K ohm, 0805 , 5% R13 Chip Resistor, 22 ohm, 1206, 5% TY-OHM R14 Chip Resistor, 100K ohm, 0805, 5% TY-OHM R15 Chip Resistor, 4K ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.36mH, EFD15 TY-OHM NC B A SH2 core 4 Turns 38 45 7 Size*QT Y La yer 0.20Φ*1 1 0.15Φ*3 1 0.40Φ*2 1 0.20Φ*2 1 0.20Φ*1 1 Thick/ Wide 0.025*11 W 0.025*11 W 0.025*11 W 0.025*11 W 0.025*11 W 0.18Φ*1 1 0.025*11 W La ye r 2 2 2 2 2 Note:1,Core and Bobbin:EFD15 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. ♦ Item Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 0.36mH±%7 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-5 and A-B shorted 75µH Typical Performance Characteristics TY-OHM R5 4 S1 Standby Power Vs Input Voltage Standy Power (mW) C4 Windi ng Insulation TY-OHM 160 140 120 100 80 60 40 20 0 85 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po Efficiency 84.000% Transformer 80.000% 76.000% 115V 230V 72.000% 68.000% 64.000% 60.000% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY USB TERMINAL( MALE AND FEMALE ) EVALUATION KITS ACT410_5V2.1A_DOE_Rev1.0 -10For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT413 5V/2.4A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT413 83.10% 93mW 5V 12W PSR flyback Key Features Demo Board Picture • Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller • Lowest total cost solution for cell phone charger using PWM IC • Universal input voltage range from 85 to 264 VAC • Accurate CV (5%) and CC (15%) performance • Adjustable up to 80kHz Switching Frequency • Integrated Output Cord Compensation • CV & CC correction for Input line, output DC cord and transformer inductance variation • No-load standby power < 0.1W • Exceed the latest DOE average efficiency re- Flat size quirement W*L*H=43mm*65mm*10mm • Short circuit and over-voltage protection • Tiny SOT23-6 package. Schematic Picture 5 -11For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials ♦ Build up REF DESCRIPTION MFTR U1 IC, ACT413,SOT23-6 Active-Semi. C1,C2 Capacitor, Electrolytic, 15uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE P1 C4 Capacitor, Electrolytic,6.8uF/35V,5x11mm KSC SH1 Capacitor, Solid, 680µF/6.3V, 6.3 × 16mm KSC C9 C12 Capacitor, Solid,330µF/6.3V, 6.3 × 16mm Terminal Windi ng KSC Start Wire Finish 9 8 3 NC S1 A B P2 8 2 3 6 3 7 Tur ns 28 18 5 28 Insulation La yer 2UEW 0.20Φ*1 1 2UEW 0.15Φ*2 1 TEX-E 0.6Φ*1 1 2UEW 0.20Φ*1 1 Thick/ Wide 0.025*11 W 0.025*11 W 0.025*11 W 0.025*11 W 1 0.025*11 W 2 1 0.025*11 W 2 C11 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C8 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE C7 Capacitor, Ceramic, 200pF/50V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D1 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT ♦ D2 Fast Recovery Rectifier,RS1M,1000V/1.0A,SMA PANJIT Item D3,D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes 1 Diode, 1N4148 SMD PANJIT Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac D1’ L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa 2 P1 Inductance Inductance between pins 9 and 6 at 1Vac & 1kHz 0.60mH±%7 3 P1 Leakage Inductance Inductance between 9 pins 6 with pins AB and pins 2-3 shorted 75µH P3 SH2 core 3 La ye r Type Size*QT Y 13 2UEW 3 Copper wire 0.2Φ*2 0.2Φ*1 2 2 2 2 Note:1,Core and Bobbin:ER2010 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary Electrical specifications Description Condition Limits L2 Axial Inductor, 1.5mH, 5*7,Dip SoKa Q1 Mosfet Transistor,4N60,TO-220 AUK PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R5 Carbon Resistor, 510K ohm, 1206, 5% TY-OHM R4 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R11,R1 4,R15 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R10 Chip Resistor, 51.1K ohm, 0805,1% TY-OHM R12 Chip Resistor, 10.2K ohm, 0805, 1% TY-OHM R2 Chip Resistor, 1M ohm, 0805 , 5% TY-OHM R3 Chip Resistor, 1M ohm, 0805 , 5% TY-OHM R7 Chip Resistor, 1.15ohm, 1206,1% TY-OHM R8 Chip Resistor, 470 ohm, 0805 , 5% TY-OHM Input Voltage (VAC) R1 Chip Resistor, 3.0K ohm, 0805, 5% TY-OHM STANDBY POWER R18 Chip Resistor, 1.2K ohm, 0805 , 5% TY-OHM R9 Chip Resistor, 100K ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.6mH, ER2010 Typical Performance Characteristics Standy Power mW) Standby Power Vs Input Voltage 140 90 40 -10 90 115 230 264 Efficiency Efficiency Vs Po Transformer 80.00% 70.00% 115V 60.00% 230V 50.00% 40.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY ( USB TERMINAL ) EVALUATION KITS ACT413_5V2.4A_DOE_Rev1.0 -12For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/2.4A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 82.30% 84mW 5V 12W CCM&QR flyback and overload protection. Key Features • Tiny SOT23-6 package. • Optimized CCM and advanced Quasi-Resonant operation. Demo Board Picture • Advanced burst mode operation enables low standby power of 100mW. • Frequency jetting and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. • Integrated patented line compensation, provide OCP/OLP protection. • Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. • Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop Normal size W*L*H=38mm*38mm*22mm Schematic Picture 6 -13For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 10µF/400V, 10 × 14mm KSC C2 Capacitor, Electrolytic, 10µF/400V, 10 × 14mm POE C3 Capacitor, Solid, 470µF/16V, 8 × 11mm C4 Capacitor, Electrolytic,6.8µF/35V, SMD 0805 C5 Capacitor, Ceramic, 100PF/50V,0603,SMD POE C6 Capacitor, Ceramic,1000pF/50V,0603,SMD POE C7 Capacitor, Solid, 470µF/16V, 8 × 11mm C0 Capacitor, Ceramic,100nF/100V,0603,SMD POE C13 Capacitor, Ceramic,1000pF/500V,0805,SMD POE Rubcon POE ♦ Build up Terminal D3 Dgate L1 Q1 PCB1 RS1M SMD Diode, Schottky, 60V/30A, SBR3060, DO-220 Diode L4148 SMD Axial Inductor, 1.5mH, 5*7, DIP Good-Ark Diodes Infineon PCB, L*W*T =38x38x1mm, Cem-1, Rev:A Jintong TY-OHM R1 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R2 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R3 Chip Resistor, 4.7Ω, 0805, 5% TY-OHM Chip Resistor, 22Ω, 0805, 5% TY-OHM R4 Chip Resistor,60.4kΩ, 0603, 1% TY-OHM R5 Chip Resistor,11kΩ, 0603, 1% TY-OHM R6 Chip Resistor, 10 Ω, 0603, 5% TY-OHM R7 Chip Resistor, 200Ω,0603, 5% TY-OHM R8 Chip Resistor, 1KΩ, 0603, 5% TY-OHM R0 Chip Resistor, 3kΩ, 0603, 5% TY-OHM R9 Chip Resistor, 1.37Ω, 1206, 1% TY-OHM R10 Chip Resistor, 5.36kΩ, 0603, 1% TY-OHM R11 Chip Resistor, 5.31kΩ, 0603, 1% TY-OHM R12 Chip Resistor, 100Ω, 0805,5% TY-OHM R13 Chip Resistor,750kΩ, 0805,5% TY-OHM R14 Chip Resistor,360Ω, 0603, 5% TY-OHM IC3 Opto-coupler, PC817C CTR=200 SMD IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 32 SH1 3 NC 15 S1 B A 7 P2 4 3 17 P3 F 1 32 Item Type Thick/ Wide Layer 2UEW 0.18Φ*1 1 0.025*11W 2 2UEW 0.12Φ*3 1 0.025*11W 2UEW 0.45Φ*2 1 0.025*11W 2 2UEW 0.15Φ*2 1 0.025*11W 2 2UEW 0.18Φ*1 1 0.025*11W 2 Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 1.1mH±%7 3 P1 Leakage Inductance Inductance between pins 3 with pins4and AB shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage 120 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po 90.00% RM6 Lm=1.1mH Y capacitance, 1000pF/400V,Y1 F ♦ SoKa Mosfet Transisor, 04N65, TO-220 CY1 2 La yer Good-Ark Fusible, 1A/250V L1 Finish P1 Insulation Size*QT Y Note:1,Core and Bobbin:RM6 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Good-Ark F1 R3B Start Turn s Standy Power (mW) D1,D2 MB6S 1.5A/400V Wire Winding Efficiency BD Rubcon SEC Sharp 80.00% 115V 70.00% 230V 60.00% 50.00% 25% Po ST 50% Po 75% Po 100% Po Output Power EFFICIENCY(20AWG,1.8M,R=0.13Ω) EVALUATION KITS ACT512_5V2.4A_DOE_Rev1.0 -14For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/4A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage 90-264VAC Device ACT512 Average Efficiency Standby Power 85.30% 92mW 5V Output Power 20W Topology CCM,QR Flyback, Synchronous Rectification over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Key Features • Optimized CCM and advanced Quasi-Resonant operation. Output Voltage • Tiny SOT23-6 package. • Advanced burst mode operation enables low Demo Board Picture standby power of 100mW. • Frequency jetting and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. • Integrated patented line compensation, provide OCP/OLP protection. • Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Mini size W*L*H=43mm*51.5mm*25mm • Integrate comprehensive protection. In case of Schematic Picture 7 -15For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials 1 REF IC1 DESCRIPTION IC, ACT512, SOT23-6 MFTR A P3 7 S1 Active-Semi C1 Capacitor, Electrolytic, 47µF/400V, 18 × 20mm KSC C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,4.7µF/50V,5*11mm KSC C5 Capacitor, Electrolytic,1500uF/16V, 10*16mm POE C6 Capacitor, Electrolytic,1000uF/16V, 8*16mm POE C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE P1 8 B NC 9 P2 12 ♦ Build up Terminal Wire Insulation C10 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Winding Start Finish Turn s Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE P1 8 7 30 SH1 12 11 17 2UEW 0.15Φ*3 1 0.025*11W BD1 GBL10 2A600V DIP Good-Ark S1 B A 5 TEX-E 0.55Φ*2 1 0.025*11W 2 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark P2 9 12 13 2UEW 0.27Φ*2 1 0.025*11W 2 P3 7 1 30 2UEW 0.27Φ*1 1 0.025*11W 2 D5 D6 Q2 Dgate RS1M SMD Mosfet Transisor, 30A40V, IPD160N04L,TO-252 Diode L4148 SMD Good-Ark infineon CM Inductor, 20mH, UU9.8 SoKa Q1 Mosfet Transisor, 4N65, 4A650V,TO-220 AUK ♦ PCB, L*W*T =51x43x1.6mm, Cem-1, Rev:A Thick/ Wide Layer 2UEW 0.27Φ*1 1 0.025*11W 2 Electrical specifications Item PCB1 La yer Note:1,Core and Bobbin:RM8 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Good-Ark LF1 Type Size*QT Y Jintong Description Condition Limits F1 Fusible, 2A/250V TY-OHM 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM 2 P1 Inductance Inductance between pins 8 and 1 at 1Vac & 1kHz 1.2mH±%7 R2 metal Resistor,100K Ω,DIP,1W,5% TY-OHM 3 Chip Resistor, 100Ω, 1206, 5% TY-OHM P1 Leakage Inductance Inductance between pins 8 and 1 with pins9-12and A -B 75µH R3 R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,54.9kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 9.1KΩ, 0805, 1% TY-OHM Chip Resistor, 1MΩ, 5% TY-OHM Chip Resistor, 2Ω, 1206, 1% TY-OHM R10 Chip Resistor, 510Ω, 0805, 5% TY-OHM R12 Chip Resistor, 1.2KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 3Ω, 0805, 5% TY-OHM R14 Chip Resistor,1.3KΩ, 0805,5% TY-OHM Input Voltage (VAC) STANDBY POWER R9,R9B Standby Power Vs Input Voltage Standy Power (mW) R7,R8 Typical Performance Characteristics 150 100 50 0 90 R15 Chip Resistor,11.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,10.5KΩ, 0805, 1% TY-OHM R17 Chip Resistor,270KΩ, 0805, 1% TY-OHM R18 Chip Resistor,13KΩ, 0805, 1% TY-OHM R19 Chip Resistor,9.1KΩ, 0805, 1% TY-OHM 90.00% R20 Chip Resistor,17.8KΩ, 0805, 1% TY-OHM 88.00% R21 Chip Resistor,10Ω, 0805, 5% TY-OHM Rgate Chip Resistor,300Ω, 0805, 5% TY-OHM T1 NTC Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 IC3 Opto-coupler, PC817C CTR=200 SM IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 Efficiency 86.00% 115V 84.00% 264 230V 82.00% 80.00% 25% Po CX1 230 Efficiency Vs Po RM8 lm=1.2mH X capacitance,0.22µF/400V,X1,L*W*H=17.5*5.6*12mm 115 50% Po 75% Po 100% Po Output Power EFFICIENCY(16AWG,1M,R=0.043Ω) SEC Sharp EVALUATION KITS ST ACT512_5V4A_DOE_Rev1.0 -16For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT334 12V/0.5A UNIVERSAL CHARGER FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT334 80.50% 66mW 12V 6W PSR flyback Key Features Demo Board Picture • Patented Primary Side Regulation Technology • Lowest total cost solution for cell phone charger using PWM IC • Universal input voltage range from 85 to 264 VAC • Accurate CV (5%) and CC (10%) performance • Adjustable up to 80kHz Switching Frequency • Integrated Output Cord Compensation • CV & CC correction for Input line, output DC cord and transformer inductance variation • No-load standby power < 0.05W • Exceed the latest DOE average efficiency requirement Normal size • No Y capacitor for EMI filter • Short circuit and over-voltage protection • Tiny SOT23-6 package. W*L*H=29mm*48.5mm*16mm Schematic Picture 8 -17For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials REF DESCRIPTION U1 IC, ACT334,SOT23-6 C1 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm ♦ Build up Terminal MFTR Windi ng Active-Semi. KSC P1 C2 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm Capacitor, Ceramic, 1000pF/500V,1206,SMD POE C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm KSC C5 Capacitor, Solid, 470uF/16V, 8x12mm Capacitor, Electrolytic, 100uF/16V, 8x12mm KSC C9 Capacitor, Ceramic,1000pF/50V, 0805, SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark Diode, schottky, 100V/5A, SL540, DO-214AB,SMD L1 Axial Inductor, 1.5mH, 0410,Dip Q1 SH1 S1 P2 SH2 --> 4 Wire Turn s <-1 NC 6 8 (5) 4 3 (5) Cor e 1 Insulation Type Size*QTY Laye r 34 2UE W 0.2Φ*1 1 0.025*8. 5W 1 34 2UE W 1 0.025*8. 5W 1 34 2UE W 1 0.025*8. 5W 2 1 0.025*8. 5W 2 1 0.025*8. 5W 2 0.2Φ*1 0.2Φ*1 8 2UE W 16 TEXE 10 1 0.15Φ*4 0.3Φ*1 2UE W 0.25Φ*2 2UE W 0.15Φ*1 Thick/ Wide Lay er 1 0.025*8. 5W 2 1 0.025*8. 5W 2 Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. Vishay ♦ Amode Tech Item Transistor, HFE 20-25, NPN,13003,TO-126 Huawei 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac PCB1 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A Jintong 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 1.43mH±%7 FR1 Wire Round Resistor,1W,10 ohm,KNP, 5% TY-OHM 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-3 and 8-6 shorted 75µH R1 Chip Resistor, 22 ohm, 0603, 5% TY-OHM R2 Chip Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 470 ohm, 0805, 5% TY-OHM R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 75K ohm, 0805,1% TY-OHM R6 Chip Resistor, 12.1K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 5.1M ohm, 1206, 5% TY-OHM R9 Chip Resistor, 0.9 ohm, 1206,1% TY-OHM R10 open TY-OHM R11 Chip Resistor, 5.1K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 10 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=1.43mH, EE16 Electrical specifications Description Condition Limits Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) D8 2 --> Rubcon C6 Finish <-- KSC C3 Sta rt 100 80 60 40 20 0 1 2 3 4 Input Voltage (VAC) STANDBY POWER Transformer EFFICIENCY(18AWG,1.8M,R=0.08Ω) EVALUATION KITS ACT334_12V0.5A_DOE_Rev1.0 -18For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 12V/0.5A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 82.10% 82mW 12V 6W CCM&QR flyback over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Key Features • Optimized CCM and advanced Quasi-Resonant operation. • Tiny SOT23-6 package. • Advanced burst mode operation enables low Demo Board Picture standby power of 100mW and can lower than 50mW with external circuit. • Frequency jetting and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. • Integrated patented line compensation, provide accurate OCP/OLP protection. • Built-in Soft-Start and Fast-Start circuit to de- Normal size crease main external Mosfet stress, output voltage rise time and output voltage overshoot. W*L*H=29mm*53.5mm*20.5mm • Integrate comprehensive protection. In case of Schematic Picture 9 -19For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C2 Capacitor, Electrolytic, 6.8uF/400V,10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,6.8uF/50V, 5x11mm POE C5 Capacitor, Ceramic,1000PF/100V, 0805,SMD POE C6 Capacitor, Electrolytic, 470uF/16V, 6.3x8mm KSC C7 Capacitor, Electrolytic, 470uF/16V, 6.5x15mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/25V, 0805,SMD POE C10 Capacitor, Ceramic, 10uF/35V, 0805,SMD Open POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D2 Fast Recovery Rectifier, RS1G,200V/1.0A, RMA PANJIT D3 Diode, Schottky, 100V/10A, SBR10100, TO-220 Diodes ♦ D4 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT Item Good-Ark Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 3uH,0.55*5T, 5*7,Dip SoKa Q1 Mosfet Transistor, 2N60,TO-262 Infineon PCB, L*W*T=53x29x1.6mm,Cem-1,Rev:A Jintong PCB1 F1 Fuse,1A/250V TY-OHM Chip Resistor, 1.0Mohm, 1206, 5% TY-OHM R3 Carbon Resistor, 750K ohm, 0805, 5% TY-OHM R4 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R5,R9,R15 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R6 Chip Resistor, 60.4K ohm, 0805,1% TY-OHM R7 Chip Resistor, 12.1K ohm, 0805, 1% TY-OHM R8 Chip Resistor, 3.21 ohm,1206 , 5% TY-OHM R10 Chip Resistor, 1.5Kohm, 0805,5% TY-OHM R12 Chip Resistor, 3K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 24.3K ohm, 0805, 1% TY-OHM R11,R14 R1,R2 Chip Resistor, 6.19K ohm, 0805, 1% TY-OHM R16 Chip Resistor, 10 ohm, 0805, 5% TY-OHM R17 Chip Resistor, 2.2Kohm, 0805, 5% TY-OHM T1 Transformer, Lp=2.6mH, EE16 U2 OPOT PC817C IC3 TL431 TO-92 Terminal Wire Start Finish Turn s P1 2 3 68 SH1 NC 5 0.9 S1 6 10 26 Insulation Size*QT Y La yer Thick/ Wide Layer 0.2Φ*1 2 0.025*11W 2 copper 10mm 1 0.025*11W 2 2UEW 0.4Φ*1 2 0.025*11W 2 Type 2UEW P2 4 5 29 2UEW 0.2Φ*1 1 0.025*11W 2 P3 3 1 68 2UEW 0.2Φ*1 2 0.025*11W 2 SH2 core 5 3 wire 0.25Φ*1 1 Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 2.6mH±%7 3 P1 Leakage Inductance Inductance between2-1 with pins6-10 and 4 -5 shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) Diode,Ultra Fast, L4148, SMD L1 Build up Winding 120 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po 90.00% Efficiency Dgate ♦ Sharp 80.00% 60.00% 50.00% 25% Po ST 115V 230V 70.00% 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT512_12V0.5A_DOE_Rev1.0 -20For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT411 12V/1A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT411 84.10% 90mW 12V 12W PSR flyback Key Features Demo Board Picture • Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller • Lowest total cost solution for cell phone charger using PWM IC • Universal input voltage range from 85 to 264 VAC • Accurate CV (5%) and CC (15%) performance • Adjustable up to 110kHz Switching Frequency • Integrated Output Cord Compensation • CV & CC correction for Input line, output DC cord and transformer inductance variation • No-load standby power < 0.1W • Exceed the latest DOE average efficiency re- Normal size quirement W*L*H=29mm*53.5mm*20.5mm • Short circuit and over-voltage protection • Tiny SOT23-6 package. Schematic Picture 10 -21For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials ♦ REF DESCRIPTION MFTR U1 IC, ACT411,SOT23-6 Active-Semi. C1 Capacitor, Electrolytic, 10uF/400V, 10x15mm KSC C2 Capacitor, Electrolytic, 15uF/400V, 12x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,3.3uF/35V,5x11mm KSC C5,C6 Capacitor, Electrolytic, 470uF/16V, 8x11.5mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D7 Diode, 1N4148 SMD PANJIT D8 Diode, schottky, 100V/20A, SBR20100CT, TO-220 Diode L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 0.55*5T, 5*7,Dip SoKa Q1 Mosfet Transistor, 2N65,TO-220 AUK PCB1 PCB, L*W*T=52.2x30x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R4 Chip Resistor, 4.7 ohm, 0805, 5% R5 Chip Resistor, 91K ohm, 0805,1% TY-OHM D5 D6 Build up Terminal Windi ng Start Finish S1 7 10 P2 4 5 10 P3 3 1 31 Typ e 2UE W 2UE W TEX -E 2UE W 2UE W P1 2 3 3 Cop per wire SH1 SH2 core TY-OHM Chip Resistor, 2M ohm, 0805 , 5% TY-OHM R9 Chip Resistor, 1.24ohm, 1206,1% TY-OHM R10 Chip Resistor, 200 ohm, 0805 , 5% TY-OHM R11 Chip Resistor, 9.1K ohm, 0805, 5% ♦ Chip Resistor, 3K ohm, 0805 , 5% R1,R13 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R14 Chip Resistor, 510 ohm, 0805, 5% TY-OHM 9 La yer 0.25Φ*1 2 0.15Φ*3 1 0.70Φ*1 1 0.25Φ*3 1 0.25Φ*1 1 Thick/ Wide 0.025*11 W 0.025*11 W 0.025*11 W 0.025*11 W 0.025*11 W 0.18Φ*1 1 0.025*11 W La ye r 2 2 2 2 2 Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 0.50mH±%7 3 P1 Leakage Inductance Inductance between 4 pins 5 with pins 710 shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage TY-OHM R12 5 15 Size*QT Y 3,Reverse the direction of bobbin when do the S1. Standy Power mW) Chip Resistor, 15.8K ohm, 0805, 1% 31 NC TY-OHM R6 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) TY-OHM STANDBY POWER Efficiency Vs Po Transformer, Lp=0.5mH, EE19 horizontal Efficiency T1 5 Turns Insulation Note:1,Core and Bobbin:EE19 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary Item R7,R8 Wire Transformer 88.00% 86.00% 84.00% 82.00% 80.00% 78.00% 76.00% 74.00% 72.00% 70.00% 68.00% 25% Po 115V 230V 50% Po 75% Po 100% Po Output Power EFFICIENCY ( 22AWG 1.5M ) EVALUATION KITS ACT411_12V1A_DOE_Rev1.0 -22For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 12V/1A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 84.60% 88mW 12V 12W CCM&QR flyback over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Key Features • Optimized CCM and advanced Quasi-Resonant operation. • Tiny SOT23-6 package. • Advanced burst mode operation enables low Demo Board Picture standby power of 100mW and can lower than 50mW with external circuit. • Frequency jetting and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. • Integrated patented line compensation, provide accurate OCP/OLP protection. • Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot. Normal size • Integrate comprehensive protection. In case of W*L*H=41.5mm*57.5mm*25mm Schematic Picture 11 -23For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF IC1 DESCRIPTION IC, ACT512, SOT23-6 MFTR Active-Semi C1 Capacitor, Electrolytic, 22µF/400V, 18 × 20mm KSC C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,4.7µF/35V,5*11mm C5 Capacitor, Solid, 470uF/16V, 10*16mm C6 Capacitor, Electrolytic,330uF/16V, 8*16mm KSC C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE BD1 GBL10 2A/600V 4Pin DIP Good-Ark P1 1 D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark SH1 D6 RS1M SMD Good-Ark D8 Diode, Schottky, 100V/30A, SBR30100, DO-220 Diode L4148 SMD L1 CM Inductor, 30mH, UU9.8 Q1 Mosfet Transisor, 04N65, TO-220 PCB1 PCB, L*W*T =58x42x1.6mm, Cem-1, Rev:A 48 NC 2 S1 B P2 5 Diodes P3 Good-Ark SH2 SoKa Jintong Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM metal Resistor,100K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,57.6kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 10.7KΩ, 0805, 1% TY-OHM Chip Resistor, 1MΩ, 5% TY-OHM R9 metal Resistor, 1.82Ω, 1W, 1% TY-OHM R10 Chip Resistor, 510Ω, 1/4W, 5% TY-OHM R12 Chip Resistor, 3.3KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,3.3KΩ, 0805,5% TY-OHM R15 Chip Resistor,24.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,6.19KΩ, 0805, 1% TY-OHM Chip Resistor,170Ω, 0805, 5% TY-OHM X capacitance, 0.1µF/400V,X1 NTC Thermistor, SC053 TVS Varistor, 10471 CY1 Y capacitance, 1000pF/400V,Y1 IC2 Opto-coupler, PC817C CTR=200 dip-4 IC3 Voltage Regulator, TL431A, Vref=2.5V TO-92 Type La yer 2UEW 0.15Φ*1 2 0.025*11W 0.9 copper 10mm 1 0.025*11W A 15 TEX-E 0.65Φ*1 1 0.025*11W 2 2 16 2UEW 0.15Φ*2 1 0.025*11W 2 4 3 48 2UEW 0.15Φ*1 1 0.025*11W 2 core 2 3 wire 0.25Φ*1 1 Start ♦ Thick/ Wide Layer 2 Electrical specifications Item Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 1and 3 at 1Vac & 1kHz 2.4mH±%7 3 P1 Leakage Inductance Inductance between pins 1 and 3 with pins5 -2 and A-B shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage EE22 lm=2.4mH CX1 Insulation Size*QT Y Note:1,Core and Bobbin:EE22 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Infineon R1 T1 Winding Wire 4 TY-OHM Rgate Terminal Finish Fusible, 2A/250V R7,R8 Build up Turn s F1 R2 ♦ Standy Power (mW) Dgate KSC Rubcon SEC TY-OHM 100 50 0 90 115 230 264 Input Voltage (VAC) TY-OHM SEC STANDBY POWER Sharp Efficiency Vs Po ST Efficiency 90.00% 85.00% 80.00% 115V 230V 75.00% 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT512_12V1A_DOE_Rev1.0 -24For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT513 12V2A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Efficiency Standby Power Output Voltage Output Power Topology 90-264VAC ACT513 88.22% 94mW 12V 24W CCM&QR flyback over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Key Features • Optimized CCM and advanced Quasi-Resonant operation. • Tiny SOT23-6 package. • Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Demo Board Picture • Frequency jetting and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. • Integrated patented line compensation, provide accurate OCP/OLP protection. • Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. • Integrate comprehensive protection. In case of Normal size W*L*H=44mm*92mm*29mm Schematic Picture 12 -25For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF IC1 DESCRIPTION IC, ACT513, SOT23-6 MFTR Active-Semi C1 Capacitor, Electrolytic,68µF/400V, 18 × 20mm C3 Capacitor, Ceramic,1000pF/1KV,DIP Rubycon C4 Capacitor, Electrolytic,6.8µF/35V,5*11mm KSC C5 Capacitor, Electrolytic,470uF/16V,8*16mm POE POE C6 Capacitor, Electrolytic470uF/16V, 8*16mm POE C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE C11 Capacitor, Electrolytic470uF/16V, 8*16mm POE Winding Start Finish Turns Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE P1 2 3 61 2UEW BD1 GBL10 2A/600V 4Pin DIP SH1 5 1 20 2UEW 0.2Φ*3 1 0.025*11W 2 S1 9,10 11,12 14 2UEW 0.8Φ1 1 0.025*11W 2 P2 4 5 15 2UEW 0.2Φ*4 1 0.025*11W 2 P3 3 6 61 2UEW 0.2Φ*1 1 0.025*11W 2 RS1M,1000V/1.0A,SMD Good-Ark D6 RS1M ,1000V/1A, SMD Good-Ark D8 Diode, Schottky, 60V30A, SBR3060, DO-220 Good-Ark Diode L4148 SMD Good-Ark LF1 CM Inductor, 50mH, UU10.5 SoKa LF2 CM Inductor, 3mH， SoKa Q1 Mosfet Transisor, 04N65, TO-220 AUK PCB, L*W*T =93x44x1.6mm, Cem-1, Rev:A F1 Fusible, 2A/250V TY-OHM Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM R2 metal Resistor,500K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,60.4kΩ, 0805, 1% TY-OHM R6 Chip Resistor,14KΩ, 0805, 1% TY-OHM Chip Resistor, 1MΩ, 5% TY-OHM R7,R8 R9 metal Resistor,1.4Ω, 1W, 1% TY-OHM R10 Chip Resistor, 1.3KΩ, 5% TY-OHM TY-OHM R12 Chip Resistor, 3.3KΩ, 0805, 5% R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,33KΩ, 0805,5% TY-OHM R15 Chip Resistor,24.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,6.19KΩ, 0805, 1% TY-OHM Chip Resistor,470Ω, 0805, 5% TY-OHM Rgate T1 ♦ CX1 X capacitance, 0.1µF/400V,X1 Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 1 0.025*11W 2 Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 11and 2at 1Vac & 1kHz 4mH±%7 3 P1 Leakage Inductance Inductance between pins 11 with pins1and 5-8,3-1 shorted 70µH Standby Power Vs Input Voltage 100 50 0 90 115 230 264 STANDBY POWER Efficiency Vs Po SEC Sharp ST 90.00% Efficiency Opto-coupler, PC817C CTR=200 dip-4 Voltage Regulator, TL431A, Vref=2.5V TO-92 Layer 0.2Φ*1 Input Voltage (VAC) NTC IC3 Size*QTY Thick/ Wide Typical Performance Characteristics ER28 lm=4mH IC2 Type Insulation La yer Electrical specifications Item Jintong R1 Wire Note:1,Core and Bobbin:ER28 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Standy Power (mW) PCB1 Build up Terminal Good-Ark D5 Dgate ♦ 85.00% 80.00% 115V 230V 75.00% 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(18AWG,1.8M,R=0.08Ω) EVALUATION KITS ACT513_12V2A_DOE_Rev1.0 -26For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected].