MBRS120T3 : SCHOTTKY BARRIER RECTIFIER

TH97/2478
www.eicsemi.com
MBRS120T3
IATF 0113686
SGS TH07/1033
TH09/2479
SCHOTTKY BARRIER RECTIFIER
Schottky Power Rectifier
Surface Mount Power Package
SMB (DO-214AA)
Employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry
features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications
where compact size and weight are critical to the
system.
4.65 ± 0.30
5.30 ± 0.22
1.14 ± 0.38
0.1 ± 0.1
0.22 ± 0.07
2.1 ± 0.15
2.28 ± 0.15
3.62 ± 0.32
FEATURES :
* Very Low Forward Voltage Drop
(0.55 Volts Max @ 1.0A, TJ = 25 °C)
* Small Compact Surface Mountable Package
* Highly Stable Oxide Passivated Junction
* Guardring for Stress Protection
* Pb / RoHS Free
Dimensions in millimeters
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMB Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.1079 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VALUE
UNIT
Maximum Repetitive Reverse Voltage
VRRM
20
V
Maximum Working Peak Reverse Voltage
VRWM
20
V
Maximum DC Blocking Voltage
VDC
20
V
Maximum Average Forward Rectified Current (TL = 115 °C)
IF(AV)
1.0
A
IFSM
40
A
VF
0.60
V
Maximum Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase)
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 1.0 A, TJ = 25 °C)
Maximum Instantaneous Reverse Current (Note1)
at TJ = 25 °C
at TJ = 100 °C
Thermal Resistance - Junction to Lead (TL = 25 °C)
Operating Junction Temperature
IR
1.0
10
mA
RӨJL
12
°C/W
TJ
- 65 to +125
°C
Note : (1) Pulse Test : Pulse Width = 300μs Duty Cycle ≤ 2%.
Page 1 of 2
Rev. 03 : September 28, 2012
TH97/2478
www.eicsemi.com
IATF 0113686
SGS TH07/1033
TH09/2479
RATING AND CHARACTERISTIC CURVES ( MBRS120T3 )
FIG.2 - TYPICAL POWER DISSIPATION
5
1.0
AVERAGE POWER DISSIPATION
(WATTS)
AVERAGE FORWARD CURRENT, (A)
FIG.1 - CURRENT DERATING
0.8
0.6
0.4
0.2
0
80
85
90
95
100
105
110
115
120
125
4
π
3
10
2
IPK
IAV= 20
1
0
130
0
1
0.3
REVERSE LEAKAGE CURRENT,
(mA)
INSTANTANEOUS FORWARD
CURRENT, (A)
4
5
100
TC = 25 °C
0.2
3
FIG.4 - TYPICAL REVERSE LEAKAGE CURRENT
TC = 100 °C
0.01
0.1
2
AVERAGE FORWARD CURRENT, (A)
FIG.3 - TYPICAL FORWARD VOLTAGE
0.1
DC
5
LEAD TEMPERATURE, ( °C)
1
SQUARE
WAVE
TJ = 125 °C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
TJ = 125 °C
10
= 100 °C
= 75 °C
1
= 25°C
0.1
0.01
0
4
8
INSTANTANEOUS FORWARD VOLTAGE, (V)
12
16
20
24
28
32
36
40
REVERSE VOLTAGE, (V)
FIG. 5 TYPICAL CAPACITANCE
REVERSE VOLTAGE (V)
200
Note :TYPICAL CAPACITANCE
AT 0 V = 160 pF
CAPACITANCE , (pF)
180
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
32
36
40
REVERSE VOLTAGE, (V)
Page 2 of 2
Rev. 03 : September 28, 2012