TH97/2478 www.eicsemi.com MBRS120T3 IATF 0113686 SGS TH07/1033 TH09/2479 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB (DO-214AA) Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. 4.65 ± 0.30 5.30 ± 0.22 1.14 ± 0.38 0.1 ± 0.1 0.22 ± 0.07 2.1 ± 0.15 2.28 ± 0.15 3.62 ± 0.32 FEATURES : * Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0A, TJ = 25 °C) * Small Compact Surface Mountable Package * Highly Stable Oxide Passivated Junction * Guardring for Stress Protection * Pb / RoHS Free Dimensions in millimeters MECHANICAL DATA : * * * * * * Case : SMB Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.1079 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL VALUE UNIT Maximum Repetitive Reverse Voltage VRRM 20 V Maximum Working Peak Reverse Voltage VRWM 20 V Maximum DC Blocking Voltage VDC 20 V Maximum Average Forward Rectified Current (TL = 115 °C) IF(AV) 1.0 A IFSM 40 A VF 0.60 V Maximum Non-repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase) Maximum Instantaneous Forward Voltage (Note 1) (IF = 1.0 A, TJ = 25 °C) Maximum Instantaneous Reverse Current (Note1) at TJ = 25 °C at TJ = 100 °C Thermal Resistance - Junction to Lead (TL = 25 °C) Operating Junction Temperature IR 1.0 10 mA RӨJL 12 °C/W TJ - 65 to +125 °C Note : (1) Pulse Test : Pulse Width = 300μs Duty Cycle ≤ 2%. Page 1 of 2 Rev. 03 : September 28, 2012 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 TH09/2479 RATING AND CHARACTERISTIC CURVES ( MBRS120T3 ) FIG.2 - TYPICAL POWER DISSIPATION 5 1.0 AVERAGE POWER DISSIPATION (WATTS) AVERAGE FORWARD CURRENT, (A) FIG.1 - CURRENT DERATING 0.8 0.6 0.4 0.2 0 80 85 90 95 100 105 110 115 120 125 4 π 3 10 2 IPK IAV= 20 1 0 130 0 1 0.3 REVERSE LEAKAGE CURRENT, (mA) INSTANTANEOUS FORWARD CURRENT, (A) 4 5 100 TC = 25 °C 0.2 3 FIG.4 - TYPICAL REVERSE LEAKAGE CURRENT TC = 100 °C 0.01 0.1 2 AVERAGE FORWARD CURRENT, (A) FIG.3 - TYPICAL FORWARD VOLTAGE 0.1 DC 5 LEAD TEMPERATURE, ( °C) 1 SQUARE WAVE TJ = 125 °C 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 TJ = 125 °C 10 = 100 °C = 75 °C 1 = 25°C 0.1 0.01 0 4 8 INSTANTANEOUS FORWARD VOLTAGE, (V) 12 16 20 24 28 32 36 40 REVERSE VOLTAGE, (V) FIG. 5 TYPICAL CAPACITANCE REVERSE VOLTAGE (V) 200 Note :TYPICAL CAPACITANCE AT 0 V = 160 pF CAPACITANCE , (pF) 180 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 36 40 REVERSE VOLTAGE, (V) Page 2 of 2 Rev. 03 : September 28, 2012