HER101 - HER108 : HIGH EFFICIENT RECTIFIER DIODES

TH09/2479
TH97/2478
www.eicsemi.com
HER101 - HER108
IATF 0113686
SGS TH07/1033
HIGH EFFICIENT
RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
1.00 (25.4)
MIN.
0.108 (2.74)
0.078 (1.99)
0.205 (5.20)
0.161 (4.10)
* Pb / RoHS Free
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
HER
101
50
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
RATING
SYMBOL
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
HER
102
100
HER
103
200
HER
104
300
HER
105
400
HER
106
600
HER
107
800
HER
108
1000
UNIT
V
IF(AV)
1.0
A
IFSM
30
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
VF
1.1
1.7
V
IR
5
µA
IR(H)
50
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
Typical Junction Capacitance ( Note 2 )
CJ
50
50
75
ns
pf
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 02 : March 24, 2005
TH09/2479
TH97/2478
IATF 0113686
SGS TH07/1033
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( HER101 - HER108 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx.)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
1.0
0.8
0.6
0.4
0.2
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
24
18
12
6
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
AMBIENT TEMPERATURE, ( °C)
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
100
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
2
10
HER101-HER105
1.0
1.0
0.1
TJ = 25 °C
HER106-HER108
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005