DTA124TM / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA Transistors Digital transistors (built in resistor) DTA124TM / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA zExternal dimensions (Unit : mm) DTA124TM 1.2 0.8 0.2 (2) (3) 0.8 0.4 0.4 1.2 0.32 0.2 0.13 0~0.1 0.5 0.22 (1) ROHM : VMT3 0.15Max. (1) Base (2) Emitter (3) Collector 0.2 1.6 (2) (3) 1.0 (1) 0.5 0.5 DTA124TE 0.2 Abbreviated symbol : 95 0.3 zFeatures 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. 0.8 0.7 0~0.1 zEquivalent circuit 0.55 0.15 1.6 0.1Min. ROHM : EMT3 Abbreviated symbol : 95 (1) Emitter (2) Base (3) Collector 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 All terminals have same dimensions B 0.7 DTA124TUA C 1.25 R1 0.2 2.1 0.15 Abbreviated symbol : 95 (1) DTA124TKA (2) (3) 0.4 All terminals have same dimensions 1.6 1.1 (1) Emitter (2) Base (3) Collector 0~0.1 ROHM : SMT3 EIAJ : SC-59 0.8 0.15 2.8 0.3Min. Abbreviated symbol : 95 DTA124TSA 2 3Min. 3 4 (15Min.) B : Base C : Collector E : Emitter (1) Emitter (2) Base (3) Collector 0~0.1 0.1Min. ROHM : UMT3 EIAJ : SC-70 0.95 0.95 1.9 2.9 E 0.45 2.5 5 ROHM : SPT EIAJ : SC-72 (1) (2) (3) 0.5 0.45 (1) Emitter (2) Collector (3) Base 1/2 DTA124TM / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Limits(DTA124T ) Symbol M E UA Unit KA SA Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C 150 200 300 mW zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA ICBO − − −0.5 µA VCB=−50V Parameter Collector cutoff current Conditions IEBO − − −0.5 µA VEB=−4V VCE(sat) − − −0.3 V IC/IB=−10mA/−1mA DC current transfer ratio hFE 100 250 600 − VCE=−5V, IC=−1mA Input resistance R1 15.4 22 28.6 kΩ Transition frequency fT − 250 − MHz Emitter cutoff current Collector-emitter saturation voltage − VCE=−10V, IE=5mA, f=100MHz ∗ ∗ Transition frequency of the device zPackaging specifications Part No. Package VMT3 EMT3 UMT3 SMT3 SPT Package type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTA124TM DTA124TE − DTA124TUA − − DTA124TKA − − − DTA124TSA − − − − − 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100˚C 25˚C −40˚C 20 10 5 2 1 -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m COLLECTOR URRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves -1 IC/IB=10 -500m -200m -100m -50m -20m -10m Ta=100˚C 25˚C −40˚C -5m -2m -1m -10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0