CDBT-54-G - Comchip Technology

Small Signal Schottky Diodes
CDBT-54/S/C/A-G
Reverse Voltage: 30 Volts
Forward Current: 200 mA
RoHS Device
SOT-23
Features
-Design for mounting on small surface.
-High speed switching application, circuit
protection.
0.122(3.10)
0.106(2.70)
3
0.055(1.40)
-Low forward voltage drop.
0.047(1.19)
1
Mechanical data
2
0.083(2.10)
0.067(1.70)
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
0.010(0.25)
0.003(0.08)
0.045(1.15)
0.118(3.00)
0.035(0.90)
0.083(2.10)
-Packing:3,000 pieces per 7” reel.
Circuit diagram
0.005(0.13)max
0.020(0.51)
0.020(0.50)
0.012(0.30)
0.014(0.35)
3
1
3
2
CDBT-54-G
1
3
2
CDBT-54S-G
1
3
2
1
CDBT-54C-G
2
Dimensions in inches and (millimeter)
CDBT-54A-G
Maximum Ratings and Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Symbol
Conditions
Value
Units
VRRM
30
V
Reverse voltage
VR
30
V
Forward current
IF
200
mA
600
mA
225
mW
0.24
0.32
0.40
0.50
1.00
V
Peak surge forward current
IFSM
Power dissipation
PD
T<1.0 sec
Maximum forward voltage
VF
@IF=0.1mA
@IF=1mA
@IF=10mA
@IF=30mA
@IF=100mA
Maximum reverse current
IR
@VR=25V
2
μA
Maximum reverse recovery time
Trr
IF=IR=10mA, RL=100Ω
5
nS
Maximum diode capacitance
CJ
VR=1V, f=1.0MHz
10
pF
Maximum junction temperature
TJ
125
°C
TSTG
-55 to +125
°C
Storage temperature
Company reserves the right to improve product design , functions and reliability without notice.
REV:C
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QW-BA002
Comchip Technology CO., LTD.
Small Signal Schottky Diodes
RATING AND CHARACTERISTIC CURVES (CDBT-54/S/C/A-G)
Fig.1- Forward characteristics
Fig.2- Reverse characteristics
1000
100
O
TA=125 C
Reverse current, (µA)
Forward current, (mA)
10
100
O
TA=125 C
10
TA=-25 OC
O
TA=0 C
O
TA=25 C
1
TA=75 OC
1
TA=25 OC
0.1
TA=0 OC
0.01
0.1
0.001
0
0.2
0.4
0.6
0.8
0
1.0
10
20
40
30
Forward voltage, (V)
Reverse voltage, (V)
Fig.3- Capacitance between terminals
characteristics
Fig.4- Power derating curve
14
50
400
O
TJ=25 C
f=1MHz
Mounted on glass
epoxy PCBs
12
Power dissipation, (mW)
Capacitance between terminals, (pF)
TA=75 OC
10
8
6
4
300
200
100
2
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
Ambient temperature, ( °C )
Reverse voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:C
Page 2
QW-BA002
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
P1
XXX
B
F
E
d
P0
12
o
0
D2
D1 D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 + 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.0
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:C
Page 3
QW-BA002
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Product marking code
Marking Code
Part Number
CDBT-54A-G
KL2
B6
CDBT-54C-G
KL3
5C
CDBT-54S-G
KL4
LD3
3
XXX
X
M
JV3
M
KL1
M
∑ : Month Code
CDBT-54-G
XX
2
M
1
M
“ • ” or “••” or “–” :Traceablity code
Month Code:
Month
Odd Year
(per A.D.)
Even Year
(per A.D.)
Month
Odd Year
(per A.D.)
Even Year
(per A.D.)
Jan
1
E
Jul
7
N
Feb
2
F
Aug
8
P
Wer
3
H
Sep
9
U
Apr
4
J
Oct
T
X
May
5
K
Nov
V
Y
Jun
6
L
Dec
C
Z
Suggested PAD Layout
E
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
E
0.80
0.031
A
C
D
B
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:C
Page 4
QW-BA002
Comchip Technology CO., LTD.