COMCHIP Silicon Bridge Rectifiers SMD Diodes Specialist KBU10005-G Thru. KBU1010-G Reverse Voltage: 50 to 1000V Forward Current: 10.0A RoHS Device KBU Features -Surge overload rating - 240 amperes peak. -Ideal for printed circuit board. 0.157(4.0)*45°C 0.935(23.7) 0.895(22.7) 0.15ΦX23L (3.8ΦX5.7L) HOLE TH RU 300 (7 .5) 0.700(17.8) 0.600(16.8) Mechanical Data -Epoxy: U/L 94-V0 rate flame retardant. -Case: Molded plastic, KBU -Mounting position: Any -Weight: 7.40grams 0.780(19.8) 0.740(18.8) 1.00 MIN. (25 .4) 0.052(1.3)DIA. 0.048(1.2)TYP. .08 7 (2.2) .0 71 (1 .8) 0.220(5.6) 0.180(4.6) 0.276(7.0) 0.256(6.5) Dimensions in inches and (millimeter) Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol KBU 10005-G KBU 1001-G KBU 1002-G KBU 1004-G KBU 1006-G KBU 1008-G KBU 1010-G Unit Maximum Reverse Peak Repetitive Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Parameter Maximum Average Forward (With heatsink Note2) Rectified Current @Tc=100°C (without hestsink) I(AV) Peak Forward Surage Current , 8.3ms Single Half Sine-Wave Super Imposed On Rated Load IFSM Maximum Forward Voltage at 5.0A Maximum Reverse Current At Rate DC Blocking Voltage Operating Temperature Range Storage Temperature Range @TJ=25°C @TJ=125°C 10.0 3.0 VF TJ TSTG 240 A 1.0 V 10.0 IR A 500 μA -55 to +125 O C -55 to +150 O C Notes: 1. Device mounted on 100mm*100mm*1.6mm Cu plate heatsink. REV:A Page 1 QW-BBR62 Comchip Technology CO., LTD. COMCHIP Silicon Bridge Rectifiers SMD Diodes Specialist Rating and Characteristics Curves (KBU10005-G Thru. KBU1010-G) Fig.2- Typical Forward Characteristics Fig.1- Derating Curve Output Rectified Current 100 Instantaneous Forward Current, (A) Average Forward Output Current, (A) 40 30 20 10 0.0 0 50 100 10 1.0 0.1 0.01 0.4 150 Case Temperature, (°C ) Instantaneous Reverse Current, (µA) Peak Forward Surge Current, (A) 350 300 250 200 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 50 0 1 10 1.0 1.2 1.4 1.6 Fig.4- Typical Reverse Characteristics 400 100 0.8 Instantaneous Forward Voltage , (V) Fig.3- Maximum Forward Surge Current 150 0.6 100 10.0 1.0 0.1 TJ=25°C 0.01 Number Of Cycle At 60Hz 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage,(V) REV: A Page 2 QW-BBR62 Comchip Technology CO., LTD. COMCHIP Silicon Bridge Rectifiers SMD Diodes Specialist Marking Code C Part Number Marking code KBU10005-G KBU10005 KBU1001-G KBU1001 KBU1002-G KBU1002 KBU1004-G KBU1004 KBU1006-G KBU1006 KBU1008-G KBU1008 KBU1010-G KBU1010 KBU - XXXX AC + XXXX / XXXXX = Product type marking code C = Compchip Logo Standard Package BULK PACK BOX INNER BOX SIZE CARTON SIZE CARTON (EA) (mm) (mm) (EA) 400 230*230*49 485*240*172 2400 Case Type KBU REV: A Page 3 QW-BBR62 Comchip Technology CO., LTD.