Etron Technology, Inc.

EtronTech
EM6GD08EWUC
256M x 8 bit DDR3 Synchronous DRAM (SDRAM)
Advanced (Rev. 2.5, Nov. /2014)
Features
Overview
• JEDEC Standard Compliant
• Power supplies: VDD & VDDQ = +1.5V ± 0.075V
• Operating temperature: 0~95°C (TC)
• Supports JEDEC clock jitter specification
• Fully synchronous operation
• Fast clock rate: 667/800/933MHz
• Differential Clock, CK & CK#
• Bidirectional differential data strobe
- DQS & DQS#
• 8 internal banks for concurrent operation
• 8n-bit prefetch architecture
• Pipelined internal architecture
• Precharge & active power down
• Programmable Mode & Extended Mode registers
• Additive Latency (AL): 0, CL-1, CL-2
• Programmable Burst lengths: 4, 8
• Burst type: Sequential / Interleave
• Output Driver Impedance Control
• 8192 refresh cycles / 64ms
- Average refresh period
7.8µs @ 0℃ ≦TC≦ +85℃
3.9µs @ +85℃≦TC≦ +95℃
• Write Leveling
• ZQ Calibration
• Dynamic ODT (Rtt_Nom & Rtt_WR)
• RoHS compliant
• Auto Refresh and Self Refresh
• 78-ball 8 x 10.5 x 1.2mm FBGA package
- Pb and Halogen Free
The 2Gb Double-Data-Rate-3 DRAMs is double data
rate architecture to achieve high-speed operation. It is
internally configured as an eight bank DRAM.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 bank
devices. These synchronous devices achieve high
speed double-data-rate transfer rates of up to 1866
Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3
DRAM key features and all of the control and address
inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the
cross point of differential clocks (CK rising and CK#
falling). All I/Os are synchronized with differential DQS
pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V
power supply and are available in BGA packages.
Table 1. Ordering Information
Part Number
Clock Frequency
Data Rate
EM6GD08EWUC-15H
667MHz
1333Mbps/pin
EM6GD08EWUC-12H
800MHz
1600Mbps/pin
EM6GD08EWUC-10H
933MHz
1866Mbps/pin
WU: indicates 8 x 10.5 x 1.2mm FBGA package
C: indicates Generation Code
H: indicates Pb and Halogen Free for FBGA Package
Power Supply
VDD 1.5V, VDDQ 1.5V
VDD 1.5V, VDDQ 1.5V
VDD 1.5V, VDDQ 1.5V
Package
FBGA
FBGA
FBGA
Table 2. Speed Grade Information
Speed Grade
DDR3-1333
DDR3-1600
DDR3-1866
Clock Frequency
CAS Latency
tRCD (ns)
tRP (ns)
667MHz
800MHz
933MHz
9
11
13
13.5
13.75
13.91
13.5
13.75
13.91
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
EtronTech
EM6GD08EWUC
Figure 1. Ball Assignment (FBGA Top View)
…
1
2
3
7
8
9
A
VSS
VDD
NC
TDQS#
VSS
VDD
B
VSS
VSSQ
DQ0
DM/
TDQS .
VSSQ
VDDQ
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
D
VSSQ
DQ6
DQS#
VDD
VSS
VSSQ
E
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
F
NC
VSS
RAS#
CK
VSS
NC
G
ODT
VDD
CAS#
CK#
VDD
CKE
H
NC
CS#
WE#
A10/AP
ZQ
NC
J
VSS
BA0
BA2
NC
VREFCA
VSS
K
VDD
A3
A0
A12/BC#
BA1
VDD
L
VSS
A5
A2
A1
A4
VSS
M
VDD
A7
A9
A11
A6
VDD
N
VSS
RESET#
A13
A14
A8
VSS
Rev. 2.5
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EtronTech
EM6GD08EWUC
Figure 2. Block Diagram
Row
Decoder
DLL
CLOCK
BUFFER
CK
CK#
CKE
32M x 8
CELL ARRAY
(BANK #0)
Column Decoder
CS#
RAS#
CAS#
WE#
32M x 8
CELL ARRAY
(BANK #1)
Column Decoder
Row
Decoder
COMMAND
DECODER
CONTROL
SIGNAL
GENERATOR
Row
Decoder
RESET#
32M x 8
CELL ARRAY
(BANK #2)
Column Decoder
COLUMN
COUNTER
MODE
REGISTER
Row
Decoder
A10/AP
A12/BC#
32M x 8
CELL ARRAY
(BANK #3)
Column Decoder
A0-A9
A11
A13-A14
BA0-BA2
Row
Decoder
ADDRESS
BUFFER
32M x 8
CELL ARRAY
(BANK #4)
REFRESH
COUNTER
ZQ
CAL
ZQCL
ZQCS
Row
Decoder
Column Decoder
32M x 8
CELL ARRAY
(BANK #5)
Column Decoder
RZQ
DQS
DQS#
TDQS
TDQS#
Row
Decoder
VSSQ
DATA
STROBE
BUFFER
DQ
Buffer
32M x 8
CELL ARRAY
(BANK #6)
Column Decoder
DQ0
Row
Decoder
~
DQ7
32M x 8
CELL ARRAY
(BANK #7)
Column Decoder
ODT
Rev. 2.5
3
DM
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 3. State Diagram
This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands
to control them. In particular, situations involving more than one bank, the enabling or disabling of on-die
termination, and some other events are not captured in full detail.
Power
On
Reset
Procedure
MRS,MPR,
Write
Leveling
Initialization
from any
RESET
state
ZQCL
ZQ
Calibration
MRS
ZQCL,ZQCS
Idle
PD
Active
Power
Down
E
X
PD
PRE = Precharge
Precharge
Power
Down
Activating
PREA = Precharge All
PD
X
MRS = Mode Register Set
PD
E
REF = Refresh
RESET = Start RESET Procedure
Bank
Activating
Read = RD, RDS4, RDS8
Read A = RDA, RDAS4, RDAS8
READ
WR
WRITE
ITE
TE
RI
Write A = WRA, WRAS4, WRAS8
RE
AD
A
W
Write = WR, WRS4, WRS8
Refreshing
REF
ACT
ACT = Active
Self
Refresh
SR
SR E
X
Power
applied
ZQCL = ZQ Calibration Long
ZQCS = ZQ Calibration Short
WRITE
AD
RE
PDE = Enter Power-down
PDX = Exit Power-down
SRE = Self-Refresh entry
SRX = Self-Refresh exit
Reading
READ
Writing
A
WRITE A
MPR = Multi-Purpose Register
READ A
A
ITE
WR
PR
E
,P
RE
A
A
RE
Automatic Sequence
Command Sequence
PRE, PREA
P
E,
PR
Writing
RE
AD
A
Reading
Precharging
Rev. 2.5
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EtronTech
EM6GD08EWUC
Ball Descriptions
Table 3. Ball Descriptions
Symbol
Type
Description
CK, CK#
Input
Differential Clock: CK and CK# are driven by the system clock. All SDRAM input signals
are sampled on the crossing of positive edge of CK and negative edge of CK#. Output
(Read) data is referenced to the crossings of CK and CK# (both directions of crossing).
CKE
Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes
LOW synchronously with clock, the internal clock is suspended from the next clock cycle
and the state of output and burst address is frozen as long as the CKE remains LOW.
When all banks are in the idle state, deactivating the clock controls the entry to the Power
Down and Self Refresh modes.
BA0-BA2
Input
Bank Address: BA0-BA2 define to which bank the BankActivate, Read, Write, or
BankPrecharge command is being applied.
A0-A14
Input
Address Inputs: A0-A14 are sampled during the BankActivate command (row address
A0-A14) and Read/Write command (column address A0-A9 with A10 defining Auto
Precharge).
A10/AP
Input
Auto-Precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write operation.
(HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge
command to determine whether the Precharge applies to one bank (A10 LOW) or all
banks (A10 HIGH).
A12/BC#
Input
Burst Chop: A12/BC# is sampled during Read and Write commands to determine if burst
chop (on the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped).
CS#
Input
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command
decoder. All commands are masked when CS# is sampled HIGH. It is considered part of
the command code.
RAS#
Input
Row Address Strobe: The RAS# signal defines the operation commands in conjunction
with the CAS# and WE# signals and is latched at the crossing of positive edges of CK
and negative edge of CK#. When RAS# and CS# are asserted "LOW" and CAS# is
asserted "HIGH," either the BankActivate command or the Precharge command is
selected by the WE# signal. When the WE# is asserted "HIGH," the BankActivate
command is selected and the bank designated by BA is turned on to the active state.
When the WE# is asserted "LOW," the Precharge command is selected and the bank
designated by BA is switched to the idle state after the precharge operation.
CAS#
Input
Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the crossing of positive
edges of CK and negative edge of CK#. When RAS# is held "HIGH" and CS# is asserted
"LOW," the column access is started by asserting CAS# "LOW." Then, the Read or Write
command is selected by asserting WE# “HIGH " or “LOW".
WE#
Input
Write Enable: The WE# signal defines the operation commands in conjunction with the
RAS# and CAS# signals and is latched at the crossing of positive edges of CK and
negative edge of CK#. The WE# input is used to select the BankActivate or Precharge
command and Read or Write command.
DQS,
Input /
DQS#
Output
Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe
is edge triggered. Write Data Strobe provides a setup and hold time for data and DM. The
data strobes DOS is paired with DQS# to provide differential pair signaling to the system
during both reads and writes.
TDQS
Output
TDQS#
Rev. 2.5
Termination Data Strobe: When TDQS is enabled, DM is disabled, and the TDQS and
TDQS# balls provide termination resistance.
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EM6GD08EWUC
DM
Input
Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle.
DM has an optional use as TDQS on the x8.
DQ0 – DQ7
Input /
Output
Data I/O: The DQ0-DQ7 input and output data are synchronized with positive and
negative edges of DQS and DQS#. The I/Os are byte-maskable during Writes.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to
the DDR3 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#, DM/TDQS
and TDQS# signal. (When TDQS is enabled via Mode Register A11=1 in MR1) The ODT
pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.
RESET#
Input
Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive
when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a
CMOS rail to rail signal with DC high and low at 80% and 20% of VDD
VDD
Supply
Power Supply: +1.5V ±0.075V
VSS
Supply
Ground
VDDQ
Supply
DQ Power: +1.5V ±0.075V.
VSSQ
Supply
DQ Ground
VREFCA
Supply
Reference voltage for CA
VREFDQ
Supply
Reference voltage for DQ
ZQ
Supply
Reference pin for ZQ calibration.
NC
-
Rev. 2.5
No Connect: These pins should be left unconnected.
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EM6GD08EWUC
Operation Mode Truth Table
Table 4. Truth Table (Note (1), (2))
Command
State
CKEn-1(3) CKEn
DM
BA0-2 A10/AP A0-9, 11, 13-14 A12/BC#
Idle(4)
H
H
X
V
Single Bank Precharge
Any
H
H
X
V
L
V
All Banks Precharge
Any
H
H
X
V
H
Write (Fixed BL8 or BC4)
Active(4)
H
H
X
V
L
Write (BC4, on the fly)
Active(4)
H
H
X
V
Write (BL8, on the fly)
Active(4)
H
H
X
Active(4)
H
H
Active(4)
H
Active(4)
Read (Fixed BL8 or BC4)
BankActivate
RAS# CAS#
WE#
L
L
H
H
V
L
L
H
L
V
V
L
L
H
L
V
V
L
H
L
L
L
V
L
L
H
L
L
V
L
V
H
L
H
L
L
X
V
H
V
V
L
H
L
L
H
X
V
H
V
L
L
H
L
L
H
H
X
V
H
V
H
L
H
L
L
Active(4)
H
H
X
V
L
V
V
L
H
L
H
Read (BC4, on the fly)
Active(4)
H
H
X
V
L
V
L
L
H
L
H
Read (BL8, on the fly)
Active(4)
H
H
X
V
L
V
H
L
H
L
H
Active(4)
H
H
X
V
H
V
V
L
H
L
H
Active(4)
H
H
X
V
H
V
L
L
H
L
H
Active(4)
H
H
X
V
H
V
H
L
H
L
H
Idle
H
H
X
V
L
L
L
L
No-Operation
Any
H
H
X
V
V
V
V
L
H
H
H
Device Deselect
Any
H
H
X
X
X
X
X
H
X
X
X
Active(5)
H
X
X
X
X
X
X
L
H
H
L
Refresh
Idle
H
H
X
V
V
V
V
L
L
L
H
SelfRefresh Entry
Idle
H
L
X
V
V
V
V
L
L
L
H
SelfRefresh Exit
Idle
L
H
X
X
X
X
X
H
X
X
X
V
V
V
V
L
H
H
H
H
L
X
L
H
X
Active
H
X
Active
H
ZQ Calibration Long
Idle
H
ZQ Calibration Short
Idle
Write with Autoprecharge
(Fixed BL8 or BC4)
Write with Autoprecharge
(BC4, on the fly)
Write with Autoprecharge
(BL8, on the fly)
Read with Autoprecharge
(Fixed BL8 or BC4)
Read with Autoprecharge
(BC4, on the fly)
Read with Autoprecharge
(BL8, on the fly)
(Extended) Mode Register Set
Burst Stop
Power Down Mode Entry
Power Down Mode Exit
Data Input Mask Disable
Data Input Mask
Enable(6)
Idle
Any
Row address
CS#
OP code
X
X
X
X
H
X
X
X
V
V
V
V
L
H
H
H
X
X
X
X
H
X
X
X
V
V
V
V
L
H
H
H
L
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
X
H
X
X
H
X
X
L
H
H
L
X
L
H
H
L
H
H
X
X
L
X
NOTE 1: V=Valid data, X=Don't Care, L=Low level, H=High level
NOTE 2: CKEn signal is input level when commands are provided.
NOTE 3: CKEn-1 signal is input level one clock cycle before the commands are provided.
NOTE 4: These are states of bank designated by BA signal.
NOTE 5: Device state is 4, and 8 burst operation.
NOTE 6: LDM and UDM can be enabled respectively.
Rev. 2.5
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EM6GD08EWUC
Functional Description
The DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM.
The DDR3 SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n Prefetch architecture
is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or
write operation for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM
core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.
Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a
burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration
of an Active command, which is then followed by a Read or Write command. The address bits registered coincident
with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A14
select the row). The address bit registered coincident with the Read or Write command are used to select the
starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10),
and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register.
Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The
following sections provide detailed information covering device reset and initialization, register definition, command
descriptions and device operation.
Figure 4. Reset and Initialization Sequence at Power-on Ramping
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK#
CK
VDD
VDDQ
tCKSRX
T=200µs
T=500µs
RESET#
tIS
Tmin=10ns
CKE
tDLLK
tIS
COMMAND
Note 1
BA
tXPR
tMRD
tMRD
tMRD
tMOD
MRS
MRS
MRS
MRS
MR2
MR3
MR1
MR0
tZQinit
ZQCL
Note 1
VALID
tIS
ODT
VALID
tIS
Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW
VALID
RTT
NOTE 1. From time point
Td
until
Tk
NOP or DES commands must be applied between MRS and ZQCL commands.
TIME BREAK
Rev. 2.5
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EM6GD08EWUC
z Power-up and Initialization
The Following sequence is required for POWER UP and Initialization.
1. Apply power (RESET# is recommended to be maintained below 0.2 x VDD, all other inputs may be undefined).
RESET# needs to be maintained for minimum 200us with stable power. CKE is pulled “Low” anytime before
RESET# being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDDmin must be
no greater than 200ms; and during the ramp, VDD>VDDQ and (VDD-VDDQ) <0.3 Volts.
- VDD and VDDQ are driven from a single power converter output, AND
- The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and
VDD on one side and must be larger than or equal to VSSQ and VSS on the other side. In addition, VTT is
limited to 0.95V max once power ramp is finished, AND
- Vref tracks VDDQ/2.
OR
- Apply VDD without any slope reversal before or at the same time as VDDQ.
- Apply VDDQ without any slope reversal before or at the same time as VTT & Vref.
- The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and
VDD on one side and must be larger than or equal to VSSQ and VSS on the other side.
2. After RESET# is de-asserted, wait for another 500us until CKE become active. During this time, the DRAM will
start internal state initialization; this will be done independently of external clocks.
3. Clock (CK, CK#) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes
active. Since CKE is a synchronous signal, the corresponding set up time to clock (tIS) must be meeting. Also a
NOP or Deselect command must be registered (with tIS set up time to clock) before CKE goes active. Once the
CKE registered “High” after Reset, CKE needs to be continuously registered “High” until the initialization
sequence is finished, including expiration of tDLLK and tZQinit.
4. The DDR3 DRAM will keep its on-die termination in high impedance state as long as RESET# is asserted.
Further, the DRAM keeps its on-die termination in high impedance state after RESET# deassertion until CKE is
registered HIGH. The ODT input signal may be in undefined state until tIS before CKE is registered HIGH. When
CKE is registered HIGH, the ODT input signal may be statically held at either LOW or HIGH. If RTT_NOM is to
be enabled in MR1, the ODT input signal must be statically held LOW. In all cases, the ODT input signal remains
static until the power up initialization sequence is finished, including the expiration of tDLLK and tZQinit.
5. After CKE being registered high, wait minimum of Reset CKE Exit time, tXPR, before issuing the first MRS
command to load mode register.(tXPR=max (tXS, 5tCK))
6. Issue MRS command to load MR2 with all application settings. (To issue MRS command for MR2, provide “Low”
to BA0 and BA2, “High” to BA1)
7. Issue MRS Command to load MR3 with all application settings. (To issue MRS command for MR3, provide “Low”
to BA2, “High” to BA0 and BA1)
8. Issue MRS Command to load MR1 with all application settings and DLL enabled. (To issue “DLL Enable”
command, provide “Low” to A0, “High” to BA0 and “Low” to BA1 and BA2)
9. Issue MRS Command to load MR0 with all application settings and “DLL reset”. (To issue DLL reset command
provide “High” to A8 and “Low” to BA0-BA2)
10. Issue ZQCL command to starting ZQ calibration.
11. Wait for both tDLLK and tZQinit completed.
12. The DDR3 SDRAM is now ready for normal operation.
Rev. 2.5
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z Reset Procedure at Stable Power
The following sequence is required for RESET at no power interruption initialization.
1. Asserted RESET below 0.2*VDD anytime when reset is needed (all other inputs may be undefined). RESET
needs to be maintained for minimum 100ns. CKE is pulled “Low” before RESET being de-asserted (min. time
10ns).
2. Follow Power-up Initialization Sequence step 2 to 11.
3. The Reset sequence is now completed. DDR3 SDRAM is ready for normal operation.
Figure 5. Reset Procedure at Power Stable Condition
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK#
CK
VDD
VDDQ
tCKSRX
T=100ns
T=500µs
RESET#
Tmin=10ns
tIS
CKE
tDLLK
tIS
COMMAND
Note 1
BA
tXPR
tMRD
tMRD
tMRD
tMOD
MRS
MRS
MRS
MRS
MR2
MR3
MR1
MR0
tZQinit
ZQCL
Note 1
VALID
tIS
ODT
VALID
tIS
Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW
VALID
RTT
NOTE 1. From time point
Td until
Tk NOP or DES commands must be applied between MRS and ZQCL commands.
TIME BREAK
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Register Definition
z Programming the Mode Registers
For application flexibility, various functions, features, and modes are programmable in four Mode Registers,
provided by the DDR3 SDRAM, as user defined variables and they must be programmed via a Mode Register Set
(MRS) command. As the default values of the Mode Registers are not defined, contents of Mode Registers must be
fully initialized and/or re-initialized, i.e., written, after power up and/or reset for proper operation. Also the contents of
the Mode Registers can be altered by re-executing the MRS command during normal operation. When
programming the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address
fields within the accessed mode register must be redefined when the MRS command is issued. MRS command and
DLL Reset do not affect array contents, which mean these commands can be executed any time after power-up
without affecting the array contents.
The mode register set command cycle time, tMRD is required to complete the write operation to the mode register
and is the minimum time required between two MRS commands shown in Figure of tMRD timing.
Figure 6. tMRD timing
T0
T1
T2
Ta0
Ta1
Tb0
COMMAND
VALID
VALID
VALID
ADDRESS
VALID
VALID
VALID
Tb1
Tb2
MRS
NOP/DES
NOP/DES
MRS
NOP/DES
VALID
VALID
VALID
VALID
VALID
Tc0
Tc1
Tc2
NOP/DES
VALID
VALID
VALID
VALID
VALID
CK#
CK
CKE
Old Settings
Settings
Updating Settings
tMRD
New Settings
tMOD
RTT_Nom ENABLED prior and/or after MRS command
ODT
VALID
VALID
ODTLoff + 1
VALID
RTT_Nom DISABLED prior and after MRS command
ODT
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
TIME BREAK
Rev. 2.5
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VALID
Don't Care
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The MRS command to Non-MRS command delay, tMOD, is require for the DRAM to update the features except
DLL reset, and is the minimum time required from an MRS command to a non-MRS command excluding NOP and
DES shown in Figure of tMOD timin.
Figure 7. tMOD timing
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
COMMAND
VALID
VALID
VALID
MRS
NOP/DES
NOP/DES
NOP/DES
NOP/DES
ADDRESS
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
Tb0
Tb1
Tb2
NOP/DES
VALID
VALID
VALID
VALID
VALID
CK#
CK
CKE
Old Settings
Settings
Updating Settings
New Settings
tMOD
RTT_Nom ENABLED prior and/or after MRS command
ODT
VALID
VALID
ODTLoff + 1
VALID
RTT_Nom DISABLED prior and after MRS command
ODT
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
TIME BREAK
VALID
Don't Care
The mode register contents can be changed using the same command and timing requirements during normal
operation as long as the DRAM is in idle state, i.e., all banks are in the precharged state with tRP satisfied, all data
bursts are completed and CKE is high prior to writing into the mode register. The mode registers are divided into
various fields depending on the functionality and/or modes.
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z Mode Register MR0
The mode-register MR0 stores data for controlling various operating modes of DDR3 SDRAM. It controls burst
length, read burst type, CAS latency, test mode, DLL reset, WR, and DLL control for precharge Power-Down, which
include various vendor specific options to make DDR3 DRAM useful for various applications. The mode register is
written by asserting low on CS#, RAS#, CAS#, WE#, BA0, BA1, and BA2, while controlling the states of address
pins according to the following figure.
Table 5. Mode Register Bitmap
BA2 BA1 BA0 A14 A13 A12 A11 A10
0*1
0
0*1
0
PPD
A9
WR
BA1 BA0 MRS mode
0
0
MR0
0
1
MR1
1
0
MR2
1
1
MR3
A11
0
0
0
0
1
1
1
1
A8
0
1
A10
0
0
1
1
0
0
1
1
DLL Reset
No
Yes
A9
0
1
0
1
0
1
0
1
A8
A7
DLL
TM
A7 Mode
0 Normal
1
Test
A6
A5
A4
CAS Latency
A3
A2
RBT
CL
A3 Read Burst Type
0 Nibble Sequential
1
Interleave
WR (cycles)
A1
BL
*2
5
*2
6
*2
7
*2
8
*2
10
*2
12
14*2
A12 DLL Control for Precharge PD
0
Slow exit (DLL off)
1
Fast exit (DLL on)
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Mode Register (0)
A1 A0
BL
8 (Fixed)
0 0
0 1 BC4 or 8 (on the fly)
BC4 (Fixed)
1 0
Reserved
1 1
A6 A5 A4 A2
Reserved
A0 Address Field
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
CAS Latency
Reserved
5
6
7
8
9
10
11
12
13
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Note 1: Reserved for future use and must be set to 0 when programming the MR.
Note 2: WR (write recovery for autoprecharge) min in clock cycles is calculated by dividing tWR (ns) by tCK (ns) and
rounding up to the next integer WRmin [cycles] =Roundup (tWR / tCK). The value in the mode register must be
programmed to be equal or larger than WRmin. The programmed WR value is used with tRP to determine tDAL.
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- Burst Length, Type, and Order
Accesses within a given burst may be programmed to sequential or interleaved order. The burst type is selected via
bit A3 as shown in the MR0 Definition as above figure. The ordering of access within a burst is determined by the
burst length, burst type, and the starting column address. The burst length is defined by bits A0-A1. Burst lengths
options include fix BC4, fixed BL8, and on the fly which allow BC4 or BL8 to be selected coincident with the
registration of a Read or Write command via A12/BC#
Table 6. Burst Type and Burst Order
Burst Length
4
Chop
Read
Write
Read
Write
8
Read
Write
Starting Column
Address
A2
A1
A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
0
V
V
1
V
V
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
V
V
V
Sequential
A3=0
Interleave
A3=1
0, 1, 2, 3, T, T, T, T 0, 1, 2, 3, T, T, T, T
1, 2, 3, 0, T, T, T, T 1, 0, 3, 2, T, T, T, T
2, 3, 0, 1, T, T, T, T 2, 3, 0, 1, T, T, T, T
3, 0, 1, 2, T, T, T, T 3, 2, 1, 0, T, T, T, T
4, 5, 6, 7, T, T, T, T 4, 5, 6, 7, T, T, T, T
5, 6, 7, 4, T, T, T, T 5, 4, 7, 6, T, T, T, T
6, 7, 4, 5, T, T, T, T 6, 7, 4, 5, T, T, T, T
7, 4, 5, 6, T, T, T, T 7, 6, 5, 4, T, T, T, T
0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X
4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X
0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5
3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1
7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
Note
1, 2, 3
1, 2, 4, 5
2
2, 4
Note 1: In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than
for the BL8 mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of
burst length being selected on-the-fly via A12/BC#, the internal write operation starts at the same point in time like a
burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be
pulled in by two clocks.
Note 2: 0~7 bit number is value of CA[2:0] that causes this bit to be the first read during a burst.
Note 3: T: Output driver for data and strobes are in high impedance.
Note 4: V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins.
Note 5: X: Don’t Care.
- CAS Latency
The CAS Latency is defined by MR0 (bit A2, A4~A6) as shown in the MR0 Definition figure. CAS Latency is the
delay, in clock cycles, between the internal Read command and the availability of the first bit of output data. DDR3
SDRAM does not support any half clock latencies. The overall Read Latency (RL) is defined as Additive Latency
(AL) + CAS Latency (CL); RL = AL + CL.
- Test Mode
The normal operating mode is selected by MR0 (bit7=0) and all other bits set to the desired values shown in the
MR0 definition figure. Programming bit A7 to a ‘1’ places the DDR3 SDRAM into a test mode that is only used by
the DRAM manufacturer and should not be used. No operations or functionality is guaranteed if A7=1.
- DLL Reset
The DLL Reset bit is self-clearing, meaning it returns back to the value of ‘0’ after the DLL reset function has been
issued. Once the DLL is enabled, a subsequent DLL Reset should be applied. Anytime the DLL reset function is
used, tDLLK must be met before any functions that require the DLL can be used (i.e. Read commands or ODT
synchronous operations.)
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- Write Recovery
The programmed WR value MR0 (bits A9, A10, and A11) is used for the auto precharge feature along with tRP to
determine tDAL. WR (write recovery for auto-precharge) min in clock cycles is calculated by dividing tWR (ns) by
tCK (ns) and rounding up to the next integer: WR min [cycles] = Roundup (tWR [ns]/tCK [ns]). The WR must be
programmed to be equal or larger than tWR (min).
- Precharge PD DLL
MR0 (bit A12) is used to select the DLL usage during precharge power-down mode. When MR0 (A12=0), or ‘slowexit’, the DLL is frozen after entering precharge power-down (for potential power savings) and upon exit requires
tXPDLL to be met prior to the next valid command. When MR0 (A12=1), or ‘fast-exit’, the DLL is maintained after
entering precharge power-down and upon exiting power-down requires tXP to be met prior to the next valid
command.
z Mode Register MR1
The Mode Register MR1 stores the data for enabling or disabling the DLL, output strength, Rtt_Nom impedance,
additive latency, WRITE leveling enable, TDQS enable and Qoff. The Mode Register 1 is written by asserting low
on CS#, RAS#, CAS#, WE#, high on BA0 and low on BA1 and BA2, while controlling the states of address pins
according to the following figure.
Table 7. Extended Mode Register EMR (1) Bitmap
BA2 BA1 BA0 A14 A13 A12 A11 A10
A9
A8
A7
A6
A5
0*1
Rtt_Nom
0*1
Level
Rtt_Nom
D.I.C
0*1
0
1
Qoff
TDQS
0*1
BA1 BA0 MRS mode
0
0
MR0
0
1
MR1
1
0
MR2
1
1
A11
0
1
A2
Rtt_Nom
Additive Latency
0 (AL disabled)
CL – 1
CL – 2
1
1
Reserved
A1
A0 Address Field
D.I.C DLL Mode Register (1)
A0 DLL Enable
Enable
0
Disable
1
*2
A7
0
1
Disable
Enable
Write leveling enable
Disabled
Enabled
Note: RZQ = 240 Ω
A1
0
1
0
1
AL
A3
0
1
0
Qoff
Output buffer enabled
Output buffer disabled
TDQS
A5
0
0
1
1
A3
A4
0
0
1
MR3
A12
0
1
A4
Output Driver Impedance Control
RZQ/6
RZQ/7
Reserved
Reserved
A9
A6
A2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Rtt_Nom
*3
Rtt_Nom disabled
RZQ/4
RZQ/2
RZQ/6
*4
RZQ/12
*4
RZQ/8
Reserved
Reserved
Note: RZQ = 240 Ω
Note 1: Reserved for future use and must be set to 0 when programming the MR.
Note 2: Outputs disabled - DQs, DQSs, DQS#s.
Note 3: In Write leveling Mode (MR1 [bit7] = 1) with MR1 [bit12] =1, all RTT_Nom settings are allowed; in Write Leveling
Mode (MR1 [bit7] = 1) with MR1 [bit12]=0, only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed.
Note 4: If RTT_Nom is used during Writes, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.
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- DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon
returning to normal operation after having the DLL disabled. During normal operation (DLL-on) with MR1 (A0=0),
the DLL is automatically disabled when entering Self-Refresh operation and is automatically re-enable upon exit of
Self-Refresh operation. Any time the DLL is enabled and subsequently reset, tDLLK clock cycles must occur before
a Read or synchronous ODT command can be issued to allow time for the internal clock to be synchronized with
the external clock. Failing to wait for synchronization to occur may result in a violation of the tDQSCK, tAON, or
tAOF parameters. During tDLLK, CKE must continuously be registered high. DDR3 SDRAM does not require DLL
for any Write operation, expect when RTT_WR is enabled and the DLL is required for proper ODT operation. For
more detailed information on DLL Disable operation are described in DLL-off Mode. The direct ODT feature is not
supported during DLL-off mode. The on-die termination resistors must be disabled by continuously registering the
ODT pin low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a mode register set command
during DLL-off mode.
The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set Rtt_WR, MR2
{A10, A9} = {0, 0}, to disable Dynamic ODT externally
- Output Driver Impedance Control
The output driver impedance of the DDR3 SDRAM device is selected by MR1 (bit A1 and A5) as shown in MR1
definition figure.
- ODT Rtt Values
DDR3 SDRAM is capable of providing two different termination values (Rtt_Nom and Rtt_WR). The nominal
termination value Rtt_Nom is programmable in MR1. A separate value (Rtt_WR) may be programmable in MR2 to
enable a unique Rtt value when ODT is enabled during writes. The Rtt_WR value can be applied during writes even
when Rtt_Nom is disabled.
- Additive Latency (AL)
Additive Latency (AL) operation is supported to make command and data bus efficient for sustainable bandwidth in
DDR3 SDRAM. In this operation, the DDR3 SDRAM allows a read or write command (either with or without autoprecharge) to be issued immediately after the active command. The command is held for the time of the Additive
Latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of the AL and
CAS Latency (CL) register settings. Write Latency (WL) is controlled by the sum of the AL and CAS Write Latency
(CWL) register settings. A summary of the AL register options are shown in MR.
- Write leveling
For better signal integrity, DDR3 memory module adopted fly-by topology for the commands, addresses, control
signals, and clocks. The fly-by topology has benefits from reducing number of stubs and their length but in other
aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes difficult for the
Controller to maintain tDQSS, tDSS, and tDSH specification. Therefore, the controller should support ‘write leveling’
in DDR3 SDRAM to compensate for skew.
- Output Disable
The DDR3 SDRAM outputs maybe enable/disabled by MR1 (bit 12) as shown in MR1 definition. When this feature
is enabled (A12=1) all output pins (DQs, DQS, DQS#, etc.) are disconnected from the device removing any loading
of the output drivers. This feature may be useful when measuring modules power for example. For normal operation
A12 should be set to ‘0’.
- TDQS enable
TDQS (Termination Data Strobe) is a feature of DDR3 SDRAM that provides additional termination resistance
outputs that may be useful in some system configurations. In contrast to the RDQS function of DDR2 SDRAM,
TDQS provides the termination resistance function only. The data strobe function of RDQS is not provided by TDQS.
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the
DM function is not supported. When the TDQS function is disabled, the DM function is provided and the TDQS# pin
is not used. The TDQS function is available in X8 DDR3 SDRAM only
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z Mode Register MR2
The Mode Register MR2 stores the data for controlling refresh related features, Rtt_WR impedance, and CAS write
latency. The Mode Register 2 is written by asserting low on CS#, RAS#, CAS#, WE#, high on BA1 and low on BA0
and BA2, while controlling the states of address pins according to the table below.
Table 8. Extended Mode Register EMR (2) Bitmap
BA2 BA1 BA0 A14 A13 A12 A11 A10
0*1
1
0
0*1
BA1 BA0 MRS mode
0
0
MR0
0
1
MR1
1
0
MR2
1
1
MR3
A9
A8
Rtt_WR
0*1
A7
A6
A5
SRT ASR
A4
A3
A2
CWL
A1
PASR
A0 Address Field
Mode Register (2)
A6
Auto Self-Refresh (ASR)
0 Manual SR Reference (SRT)
1
ASR enable (Optional)
*2
A10 A9
RTT_WR
0
0 Dynamic ODT off (Write does not affect Rtt value)
0
1
RZQ/4
RZQ/2
1
0
Reserved
1
1
Self-Refresh Temperature (SRT) Range
A7
Normal operating temperature range
0
1 Extended (optional) operating temperature range
A2 A1 A0
0
0
0
0
1
1
1
1
A5 A4 A3
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Partial Array Self-Refresh (Optional)
Full Array
HalfArray (BA[2:0]=000,001,010,&011)
Quarter Array (BA[2:0]=000,&001)
th
1/8 Array (BA[2:0]=000)
3/4 Array (BA[2:0]=010,011,100.101,110,&111)
HalfArray (BA[2:0]=100,101,110,&111)
Quarter Array (BA[2:0]=110,&111)
th
1/8 Array (BA[2:0]=111)
CAS write Latency (CWL)
5 (tCK(avg)≧2.5ns)
6 (2.5ns＞tCK(avg)≧1.875ns)
7 (1.875ns＞tCK(avg)≧1.5ns)
8 (1.5ns＞tCK(avg)≧1.25ns)
9 (1.25ns＞tCK(avg)≧1.07ns)
Reserved
Reserved
Reserved
Note 1: BA2 and A8, A11~ A14 are RFU and must be programmed to 0 during MRS.
Note 2: The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled.
During write leveling, Dynamic ODT is not available.
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- Partial Array Self-Refresh (PASR)
Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine
if DDR3 SDRAM devices support the following options or requirements referred to in this material.
If PASR (Partial Array Self-Refresh) is enabled, data located in areas of the array beyond the specified address
range will be lost if Self-Refresh is entered. Data integrity will be maintained if tREFI conditions are met and no SelfRefresh command is issued.
- CAS Write Latency (CWL)
The CAS Write Latency is defined by MR2 (bits A3-A5) shown in MR2. CAS Write Latency is the delay, in clock
cycles, between the internal Write command and the availability of the first bit of input data. DDR3 DRAM does not
support any half clock latencies. The overall Write Latency (WL) is defined as Additive Latency (AL) + CAS Write
Latency (CWL); WL=AL+CWL.
For more information on the supported CWL and AL settings based on the operating clock frequency, refer to
“Standard Speed Bins”. For detailed Write operation refer to “WRITE Operation”.
- Auto Self-Refresh (ASR) and Self-Refresh Temperature (SRT)
DDR3 SDRAM must support Self-Refresh operation at all supported temperatures. Applications requiring SelfRefresh operation in the Extended Temperature Range must use the ASR function or program the SRT bit
appropriately.
Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine
if DDR3 SDRAM devices support the following options or requirements referred to in this material. For more details
refer to “Extended Temperature Usage”. DDR3 SDRAMs must support Self-Refresh operation at all supported
temperatures. Applications requiring Self-Refresh operation in the Extended Temperature Range must use the
optional ASR function or program the SRT bit appropriately.
- Dynamic ODT (Rtt_WR)
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command. MR2 Register locations A9 and A10 configure the Dynamic ODT settings.
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command. MR2 Register locations A9 and A10 configure the Dynamic ODT settings. In Write
leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.
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z Mode Register MR3
The Mode Register MR3 controls Multi-purpose registers. The Mode Register 3 is written by asserting low on CS#,
RAS#, CAS#, WE#, high on BA1 and BA0, and low on BA2 while controlling the states of address pins according to
the table below
Table 9. Extended Mode Register EMR (3) Bitmap
BA2 BA1 BA0 A14
0*1
1
A13
A12 A11
1
BA1 BA0 MRS mode
0
0
MR0
0
1
MR1
1
0
MR2
1
1
MR3
A10
A9
A8
A7
A6
A5
A4
0*1
A3
A2
MPR
A2
0
1
MPR
*3
Normal operation
Dataflow from MPR
A1
0
0
1
1
A1
A0 Address Field
MPR Loc Mode Register (3)
MPR location
A0
*2
0 Predefined pattern
RFU
1
RFU
0
RFU
1
Note 1: BA2, A3 - A14 are RFU and must be programmed to 0 during MRS.
Note 2: The predefined pattern will be used for read synchronization.
Note 3: When MPR control is set for normal operation (MR3 A[2] = 0) then MR3 A[1:0] will be ignored.
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Table 10. Absolute Maximum DC Ratings
Symbol
Parameter
Values
Unit
Note
VDD
Voltage on VDD pin relative to Vss
-0.4 ~ 1.8
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
-0.4 ~ 1.8
V
1,3
Voltage on any pin relative to Vss
-0.4 ~ 1.8
V
1
Storage temperature
- 55~100
°C
1,2
VIN, VOUT
TSTG
NOTE1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device.This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE2: Storage Temperature is the case surface temperature on the center/top side of the DRAM.
NOTE3: VDD and VDDQ must be within 300mV of each other at all times; and Vref must be not greater than 0.6VDDQ,
when VDD and VDDQ are less than 500mV; Vref may be equal to or less than 300mV.
Table 11. Temperature Range
Symbol
Parameter
Operating case temperature Range
TOPER
Extended Temperature Range
Values
Unit
Note
0~85
°C
1,2
85~95
°C
1,3
NOTE1: Operating temperature is the case surface temperature on center/top of the DRAM.
NOTE2: The operating temperature range is the temperature where all DRAM specification will be supported.
Outside of this temperature range, even if it is still within the limit of stress condition, some deviation on portion of
operating specification may be required. During operation, the DRAM case temperature must be maintained
between 0-85°C under all other specification parameter. Supporting 0 - 85 °C with full JEDEC AC & DC
specifications.
NOTE3: Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C
case temperature. Full specifications are guaranteed in this range, but the following additional apply.
a) Refresh commands must be doubled in frequency, therefore, reducing the Refresh interval tREFI to 3.9us. It is
also possible to specify a component with 1x refresh (tREFI to 7.8us) in the Extended Temperature Range.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the
Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6=0 and MR2 A7=1) or enable
the optional Auto Self-Refresh mode (MR2 A6=1 and MR2 A7=0).
Table 12. Recommended DC Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Note
VDD
Power supply voltage
1.425
1.5
1.575
V
1,2
VDDQ
Power supply voltage for output
1.425
1.5
1.575
V
1,2
NOTE1: Under all conditions VDDQ must be less than or equal to VDD.
NOTE2: VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Rev. 2.5
20
Nov. /2014
EtronTech
EM6GD08EWUC
Table 13. Single-Ended AC and DC Input Levels for Command and Address
Symbol
-10
Parameter
-12/15
Min.
Max.
Min.
Max.
Unit Note
VIH.CA(DC100)
DC input logic high
VREF+0.1
VDD
VREF+0.1
VDD
V
1,5
VREF-0.1
VSS
VREF-0.1
VIL.CA(DC100)
DC input logic low
VSS
V
1,6
VIH.CA(AC175)
AC input logic high
-
-
VREF+0.175
-
V
1,2
VIL.CA(AC175)
AC input logic low
-
-
-
VREF-0.175
V
1,2
VIH.CA(AC150)
AC input logic high
-
-
VREF+0.15
-
V
1,2
VIL.CA(AC150)
AC input logic low
-
-
-
VREF-0.15
V
1,2
VIH.CA(AC135)
AC input logic high
VREF+0.135
-
-
-
V
1,2
VIL.CA(AC135)
AC input logic low
-
VREF-0.135
-
-
V
1,2
0.51xVDD
0.49xVDD
0.51xVDD
V
3,4
VRefCA(DC)
Reference Voltage for ADD, CMD inputs 0.49xVDD
NOTE 1: For input only pins except RESET#. Vref = VrefCA(DC).
NOTE 2: See “Overshoot and Undershoot Specifications”.
NOTE 3: The ac peak noise on VRef may not allow VRef to deviate from VRefCA(DC) by more than +/-1% VDD (for
reference: approx. +/- 15 mV).
NOTE 4: For reference: approx. VDD/2 +/- 15 mV.
NOTE 5: VIH(dc) is used as a simplified symbol for VIH.CA(DC100)
NOTE 6: VIL(dc) is used as a simplified symbol for VIL.CA(DC100)
NOTE 7: VIH(ac) is used as a simplified symbol for VIH.CA(AC175), VIH.CA(AC150), VIH.CA(AC135) and VIH.CA(AC175)
value is used when Vref + 0.175V is referenced, VIH.CA(AC150) value is used when Vref + 0.150V is referenced,
VIH.CA(AC135) value is used when Vref + 0.135V is referenced.
NOTE 8: VIL(ac) is used as a simplified symbol for VIL.CA(AC175), VIL.CA(AC150), VIL.CA(AC135) and VIL.CA(AC175)
value is used when Vref - 0.175V is referenced, VIL.CA(AC150) value is used when Vref - 0.150V is referenced,
VIL.CA(AC135) value is used when Vref - 0.135V is referenced.
Table 14. Single-Ended AC and DC Input Levels for DQ and DM
Symbol
-10
Parameter
-12/15
Min.
Max.
Min.
Max.
Unit Note
VIH.DQ(DC100)
DC input logic high
VREF+0.1
VDD
VREF+0.1
VDD
V
1,5
VIL.DQ(DC100)
DC input logic low
VSS
VREF-0.1
VSS
VREF-0.1
V
1,6
VIH.DQ(AC150)
AC input logic high
-
-
VREF+0.15
-
V
1,2
VIL.DQ(AC150)
AC input logic low
-
-
-
VREF-0.15
V
1,2
VIH.DQ(AC135)
AC input logic high
VREF+0.135
-
-
-
V
1,2
VIL.DQ(AC135)
AC input logic low
-
VREF-0.135
-
-
V
1,2
0.49xVDD
0.51xVDD
0.49xVDD
0.51xVDD
V
3,4
VRefDQ(DC)
Reference Voltage for DQ, DM inputs
NOTE 1: Vref = VrefDQ(DC).
NOTE 2: See “Overshoot and Undershoot Specifications”.
NOTE 3: The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for
reference: approx. +/- 15 mV).
NOTE 4: For reference: approx. VDD/2 +/- 15 mV.
NOTE 5: VIH(dc) is used as a simplified symbol for VIH.DQ(DC100)
NOTE 6: VIL(dc) is used as a simplified symbol for VIL.DQ(DC100)
NOTE 7: VIH(ac) is used as a simplified symbol for VIH.DQ(AC150), VIH.DQ(AC135) and VIH.DQ(AC150) value is used
when Vref + 0.150V is referenced, VIH.DQ(AC135) value is used when Vref + 0.135V is referenced.
NOTE 8: VIL(ac) is used as a simplified symbol for VIL.DQ(AC150), VIL.DQ(AC135) and VIL.DQ(AC150) value is used
when Vref - 0.150V is referenced, VIL.DQ(AC135) value is used when Vref - 0.135V is referenced.
Rev. 2.5
21
Nov. /2014
EtronTech
EM6GD08EWUC
Table 15. Differential AC and DC Input Levels
Symbol
Parameter
VIHdiff
Differential input high
VILdiff
Differential input logic low
Min.
Max.
0.2
-
V
1, 3
-
- 0.2
V
1, 3
Unit Note
VIHdiff(AC)
Differential input high ac
2 x (VIH(AC) - VREF)
-
V
2, 3
VILdiff(AC)
Differential input low ac
-
2 x (VIL(AC) - VREF)
V
2, 3
NOTE 1: Used to define a differential signal slew-rate.
NOTE 2: For CK - CK# use VIH/VIL(ac) of ADD/CMD and VREFCA; for DQS, DQS# use VIH/VIL(ac) of DQs and VREFDQ;
if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
NOTE 3: These values are not defined; however, the single-ended signals CK, CK#, DQS, DQS# need to be within the
respective limits (VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for overshoot and
undershoot.
Table 16. Capacitance (VDD = 1.5V, f = 1MHz, TOPER = 25 °C)
-10
-12
-15
Symbol
Parameter
CIO
Input/output capacitance,
(DQ, DM, DQS, DQS#, TDQS, TDQS#)
1.4
2.2
1.4
2.3
1.4
2.5
pF
1, 2, 3
CCK
Input capacitance, CK and CK#
0.8
1.3
0.8
1.4
0.8
1.4
pF
2, 3
CDCK
Input capacitance delta, CK and CK#
0
0.15
0
0.15
0
0.15
pF
2, 3, 4
CDDQS
Input/output capacitance delta,
DQS and DQS#
0
0.15
0
0.15
0
0.15
pF
2, 3, 5
Input capacitance,
(CTRL, ADD, CMD input-only pins)
0.75
1.2
0.75
1.3
0.75
1.3
pF
2, 3, 6
Input capacitance delta,
(All CTRL input-only pins)
-0.4
0.2
-0.4
0.2
-0.4
0.2
pF
2, 3, 7,
8
Input capacitance delta,
(All ADD, CMD input-only pins)
-0.4
0.4
-0.4
0.4
-0.4
0.4
pF
2, 3, 9,
10
CDIO
Input/output capacitance delta,
(DQ, DM, DQS, DQS#, TDQS, TDQS#) -0.5
0.3
-0.5
0.3
-0.5
0.3
pF
2, 3,
11
CZQ
Input/output capacitance of ZQ pin
3
-
3
-
3
pF
2, 3,
12
CI
CDI_CTRL
CDI_ADD_CMD
Min. Max. Min. Max. Min. Max.
-
Unit Note
NOTE 1: Although the DM, TDQS and TDQS# pins have different functions, the loading matches DQ and DQS.
NOTE 2: This parameter is not subject to production test. It is verified by design and characterization. VDD=VDDQ=1.5V,
VBIAS=VDD/2 and ondie termination off.
NOTE 3: This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here.
NOTE 4: Absolute value of CCK-CCK#.
NOTE 5: Absolute value of CIO(DQS)-CIO(DQS#).
NOTE 6: CI applies to ODT, CS#, CKE, A0-A14, BA0-BA2, RAS#, CAS#, WE#.
NOTE 7: CDI_CTRL applies to ODT, CS# and CKE.
NOTE 8: CDI_CTRL=CI(CTRL)-0.5*(CI(CK)+CI(CK#)).
NOTE 9: CDI_ADD_CMD applies to A0-A12, BA0-BA2, RAS#, CAS# and WE#.
NOTE 10: CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CK)+CI(CK#)).
NOTE 11: CDIO=CIO(DQ,DM) - 0.5*(CIO(DQS)+CIO(DQS#)).
NOTE 12: Maximum external load capacitance on ZQ pin: 5 pF.
Rev. 2.5
22
Nov. /2014
EtronTech
EM6GD08EWUC
Table 17. IDD specification parameters and test conditions (VDD = 1.5V ± 0.075V, TOPER = 0~85 °C)
-10
-12
Max.
-15
IDD0
77
70
63
mA
IDD1
100
95
90
mA
IDD2N
40
35
30
mA
IDD2P0
12
12
12
mA
IDD2P1
25
22
22
mA
IDD2Q
40
35
30
mA
IDD3N
50
45
40
mA
IDD3P
40
35
30
mA
IDD4R
170
160
150
mA
IDD4W
170
160
150
mA
Parameter & Test Condition
Symbol
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: High between ACT and
PRE; Command, Address, Bank Address Inputs: partially toggling; Data IO:
MID-LEVEL; DM:stable at 0; Bank Activity: Cycling with one bank active at a
time: 0,0,1,1,2,2,...;Output Buffer and RTT: Enabled in Mode Registers*2;
ODT Signal: stable at 0.
Operating One Bank Active-Read-Precharge Current
CKE: High; External clock: On; BL: 8*1, 7; AL:0; CS#: High between ACT, RD
and PRE; Command, Address, Bank Address Inputs, Data IO: partially
toggling; DM:stable at 0; Bank Activity: Cycling with one bank active at a time:
0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode Registers*2; ODT
Signal: stable at 0.
Precharge Standby Current
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,
Address, Bank Address Inputs: partially toggling; Data IO: MID-LEVEL;
DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT:
Enabled in Mode Registers*2; ODT Signal: stable at 0.
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable
at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in
Mode Registers*2; ODT Signal: stable at 0; Pecharge Power Down Mode:
Slow Exit.*3
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable
at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in
Mode Registers*2; ODT Signal: stable at 0; Pecharge Power Down Mode:
Fast Exit.*3
Precharge Quiet Standby Current
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable
at 0;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in
Mode Registers*2; ODT Signal: stable at 0.
Active Standby Current
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,
Address, Bank Address Inputs: partially toggling; Data IO: MID-LEVEL;
DM:stable at 0;Bank Activity: all banks open; Output Buffer and RTT:
Enabled in Mode Registers*2; ODT Signal: stable at 0.
Active Power-Down Current
CKE: Low; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL;DM:stable
at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in
Mode Registers*2; ODT Signal: stable at 0
Operating Burst Read Current
CKE: High; External clock: On; BL: 8*1, 7; AL: 0; CS#: High between RD;
Command, Address, Bank Address Inputs: partially toggling; DM:stable at
0; Bank Activity: all banks open, RD commands cycling through banks:
0,0,1,1,2,2,...; tput Buffer and RTT: Enabled in Mode Registers*2; ODT
Signal: stable at 0.
Operating Burst Write Current
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: High between WR;
Command, Address, Bank Address Inputs: partially toggling; DM: stable at
0; Bank Activity: all banks open. Output Buffer and RTT: Enabled in Mode
Registers*2; ODT Signal: stable at HIGH.
Rev. 2.5
23
Unit
Nov. /2014
EtronTech
EM6GD08EWUC
Burst Refresh Current
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: High between tREF;
Command, Address, Bank Address Inputs: partially toggling; Data IO: MIDLEVEL;DM:stable at 0; Bank Activity: REF command every tRFC; Output
Buffer and RTT: Enabled in Mode Registers*2; ODT Signal: stable at 0.
Self Refresh Current:
Auto Self-Refresh (ASR): Disabled*4; Self-Refresh
TCASE: 0 - 85°C
Temperature Range (SRT): Normal*5; CKE: Low; External
*1
clock: Off; CK and CK#: LOW; BL: 8 ; AL: 0; CS#,
Command, Address, Bank Address, Data IO: MIDLEVEL;DM:stable at 0; Bank Activity: Self-Refresh
TCASE: 0 - 95°C
operation; Output Buffer and RTT: Enabled in Mode
*2
Registers ; ODT Signal: MID-LEVEL
IDD5B
150
145
140
mA
IDD6
12
12
12
mA
IDD6ET
15
15
15
mA
Operating Bank Interleave Read Current
CKE: High; External clock: On; BL: 8*1, 7; AL: CL-1; CS#: High between ACT
and RDA; Command, Address, Bank Address Inputs: partially toggling;
DM:stable at 0; Output Buffer and RTT: Enabled in Mode Registers*2; ODT
Signal: stable at 0.
IDD7
250
240
230
mA
RESET Low Current:
RESET: Low; External clock: Off; CK and CK# : Low ; CKE : Floating ; CS,
Command, Address, Bank Address, Data IO : Floating ; ODT Signal :
Floating
IDD8
14
14
14
mA
NOTE 1: Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B1
NOTE 2: Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B;
RTT_Wr enable: set MR2 A[10,9] = 10B
NOTE 3: Pecharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit
NOTE 4: Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
NOTE 5: Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range
NOTE 6: Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are
supported by DDR3 SDRAM device
NOTE 7: Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
Rev. 2.5
24
Nov. /2014
EtronTech
EM6GD08EWUC
Table 18. Electrical Characteristics and Recommended A.C. Operating Conditions
(VDD = 1.5V ± 0.075V, TOPER = 0~85 °C)
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(avg)
tCK (DLL_OFF)
tCH(avg)
tCL(avg)
tDQSQ
tQH
tLZ(DQ)
tHZ(DQ)
20
13.75
20
13.5
20
ACT to internal read or write delay time
-
13.75
-
13.5
-
PRE command period
13.91
-
13.75
-
13.5
-
ACT to ACT or REF command period
47.91
-
48.75
-
49.5
-
ns
ns
ns
ns
34
9*
tREFI
35
9*
tREFI
36
9*
tREFI
ns
CL=7, CWL=6
1.875
<2.5
1.875
<2.5
1.875
<2.5
CL=8, CWL=6
1.875
<2.5
1.875
<2.5
1.875
<2.5
CL=9, CWL=7
1.5
<1.875
1.5
<1.875
1.5
<1.875
CL=10, CWL=7
1.5
<1.875
1.5
<1.875
1.5
<1.875
CL=11, CWL=8
1.25
<1.5
1.25
<1.5
-
-
CL=12, CWL=9
1.25
<1.5
-
-
-
-
CL=13, CWL=9
1.07
<1.25
-
-
-
-
8
-
8
-
8
-
Average clock HIGH pulse width
0.47
0.53
0.47
0.53
0.47
0.53
Average Clock LOW pulse width
0.47
0.53
0.47
0.53
0.47
0.53
-
85
-
100
-
125
ACTIVE to PRECHARGE command period
DQ output hold time from DQS, DQS#
0.38
-
0.38
-
0.38
-
DQ low-impedance time from CK, CK#
-390
195
-450
225
-500
250
DQ high impedance time from CK, CK#
-
195
-
225
-
250
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
ps
tCK
ps
ps
AC150
-
-
10
-
30
-
ps
AC135
68
-
-
-
-
-
ps
DC100
70
-
45
-
65
-
ps
DQ and DM Input pulse width for each input
320
-
360
-
400
-
DQS,DQS# differential READ Preamble
0.9
-
0.9
-
0.9
-
DQS, DQS# differential READ Postamble
0.3
-
0.3
-
0.3
-
DQS, DQS# differential output high time
0.4
-
0.4
-
0.4
-
DQS, DQS# differential output low time
0.4
-
0.4
-
0.4
-
DQS, DQS# differential WRITE Preamble
0.9
-
0.9
-
0.9
-
DQS, DQS# differential WRITE Postamble
DQS, DQS# rising edge output access
time from rising CK, CK#
DQS and DQS# low-impedance time
(Referenced from RL - 1)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
DQS, DQS# differential input low pulse width
0.3
-
0.3
-
0.3
-
ps
tCK
tCK
tCK
tCK
tCK
tCK
-195
195
-225
225
-255
255
ps
-390
195
-450
225
-500
250
ps
-
195
-
225
-
250
ps
Average clock period
Minimum Clock Cycle Time (DLL off mode)
DQS, DQS# to DQ skew, per group, per access
Data hold time from DQS, DQS#
referenced to Vih(dc) / Vil(dc) levels
tHZ(DQS)
tDQSL
tDQSH
tDQSS
tDSS
tDSH
tDLLK
tRTP
Rev. 2.5
Unit
13.91
tDH(base)
tLZ(DQS)
-15
Min. Max.
13.91
Data setup time to DQS, DQS#
referenced to Vih(ac) / Vil(ac) levels
tDQSCK
-12
Min. Max.
Internal read command to first data
tDS(base)
tDIPW
tRPRE
tRPST
tQSH
tQSL
tWPRE
tWPST
-10
Min. Max.
Parameter
0.45
0.55
0.45
0.55
0.45
0.55
DQS, DQS# differential input high pulse width
0.45
0.55
0.45
0.55
0.45
0.55
DQS, DQS# rising edge to CK, CK# rising edge
DQS, DQS# falling edge setup time to
CK, CK# rising edge
DQS, DQS# falling edge hold time from
CK, CK# rising edge
DLL locking time
-0.27
0.27
-0.27
0.27
-0.25
0.25
tCK
tCK
tCK
0.18
-
0.18
-
0.2
-
tCK
0.18
-
0.18
-
0.2
-
tCK
512
-
512
-
512
-
tCK
-
max
(4nCK,
7.5ns)
-
max
(4nCK,
7.5ns)
-
max
(4nCK,
7.5ns)
Internal READ Command to
PRECHARGE Command delay
25
Nov. /2014
EtronTech
tWTR
EM6GD08EWUC
Delay from start of internal write
transaction to internal read command
max
(4nCK,
7.5ns)
-
max
(4nCK,
7.5ns)
-
max
(4nCK,
7.5ns)
-
tWR
tMRD
WRITE recovery time
15
-
15
-
15
-
Mode Register Set command cycle time
4
-
4
-
4
-
tMOD
Mode Register Set command update delay
max
(12nCK,
15ns)
-
max
(12nCK,
15ns)
-
max
(12nCK,
15ns)
-
tCCD
tDAL(min)
tMPRR
CAS# to CAS# command delay
4
-
4
-
4
-
1
-
1
-
1
-
max
(4nCK,
5ns)
-
max
(4nCK,
6ns)
-
max
(4nCK,
6ns)
-
27
-
30
-
30
-
AC175
-
-
45
-
65
-
AC150
-
-
170
-
190
-
AC135
65
-
-
-
-
-
ns
ps
ps
ps
DC100
100
-
120
-
140
-
ps
535
-
560
-
620
-
ps
512
-
512
-
512
-
Normal operation Full calibration time
256
-
256
-
256
-
Normal operation Short calibration time
64
-
64
-
64
-
tCK
tCK
tCK
Auto precharge write recovery + prechargetime
Multi-Purpose Register Recovery Time
tRRD
ACTIVE to ACTIVE command period
tFAW
Four activate window
tIS(base)
Command and Address setup time to CK,
CK# referenced to Vih(ac) / Vil(ac) levels
tIH(base)
tIPW
tZQinit
tZQoper
tZQCS
tXPR
tXS
tXSDLL
tCKESR
tCKSRE
tCKSRX
tXP
tXPDLL
tCKE
tCPDED
Command and Address hold time from CK,
CK# referenced to Vih(dc) / Vil(dc) levels
Control and Address Input pulse width for
each input
Power-up and RESET calibration time
max
(5nCK,
Exit Reset from CKE HIGH to a valid command
tRFC
+10ns)
max
Exit Self Refresh to commands not
(5nCK,
tRFC
requiring a locked DLL
+10ns)
Exit Self Refresh to commands requiring a
tDLLK
(min)
locked DLL
tCKE
Minimum CKE low width for Self Refresh
(min) +
entry to exit timing
1 nCK
Valid Clock Requirement after Self Refresh Entry (SRE) max
(5 nCK,
or Power-Down Entry (PDE)
10 ns)
Valid Clock Requirement before Self Refresh Exit (SRX) max
(5 nCK,
or Power-Down Exit (PDX) or Reset Exit
10 ns)
Exit Power Down with DLL on to any valid command;
max
(3 nCK,
Exit Precharge Power Down with DLL frozen to
6 ns)
commands not requiring a locked DLL
max
Exit Precharge Power Down with DLL
(10nCK,
frozen to commands requiring a lockedDLL
24 ns)
max
(3 nCK,
CKE minimum pulse width
5ns)
Command pass disable delay
tPD
Power Down Entry to Exit Timing
tACTPDEN
tPRPDEN
Timing of ACT command to Power Down entry
Timing of PRE or PREA command to
Power Down entry
tRDPDEN
Timing of RD/RDA command to Power Down entry
tWRPDEN
Timing of WR command to Power Down
entry (BL8OTF, BL8MRS, BC4OTF)
Rev. 2.5
WR + tRP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max
(5nCK,
tRFC
+10ns)
max
(5nCK,
tRFC
+10ns)
tDLLK
(min)
tCKE
(min) +
1 nCK
max
(5 nCK,
10ns)
max
(5 nCK,
10ns)
max
(3 nCK,
6ns)
max
(10nCK,
24ns)
max
(3 nCK,
5.625ns)
tCK
tCK
tCK
-
-
-
tCK
-
-
-
-
-
-
tCK
2
-
1
-
1
-
tCKE
(min)
9*
tREFI
tCKE
(min)
9*
tREFI
tCKE
(min)
9*
tREFI
1
-
1
-
1
-
tCK
1
-
1
-
1
-
tCK
-
tCK
-
tCK
RL + 4 +
1
WL + 4
+
(tWR / tCK)
26
-
max
(5nCK,
tRFC
+10ns)
max
(5nCK,
tRFC
+10ns)
tDLLK
(min)
tCKE
(min) +
1 nCK
max
(5 nCK,
10ns)
max
(5 nCK,
10ns)
max
(3 nCK,
6ns)
max
(10nCK,
24ns)
max
(3 nCK,
5ns)
ns
tCK
-
RL + 4 +
1
WL + 4
+
(tWR / tCK)
-
RL + 4 +
1
WL + 4
+
(tWR / tCK)
Nov. /2014
EtronTech
EM6GD08EWUC
tWRAPDEN
Timing of WRA command to Power
Down entry (BL8OTF, BL8MRS,BC4OTF)
tWRPDEN
Timing of WR command to Power Down entry
(BC4MRS)
WL + 4
+
WR + 1
WL + 2
+
-
(tWR / tCK)
WL + 4
+
WR + 1
WL + 2
+
-
(tWR / tCK)
WL + 4
+
WR + 1
WL + 2
+
-
tCK
-
tCK
WL + 2
+
WR + 1
-
tCK
tCK
(tWR / tCK)
WL + 2
+
WR + 1
-
Timing of REF command to Power Down entry
1
tMRSPDEN
Timing of MRS command to Power Down entry
tMOD
(min)
ODTLon
ODT turn on Latency
WL - 2 = CWL + AL - 2
ODT turn off Latency
ODT high time without write command or
with write command and BC4
ODT high time with Write command and BL8
Asynchronous RTT turn-on delay
(Power- Down with DLL frozen)
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
RTT turn-on
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
RTT dynamic change skew
First DQS/DQS# rising edge after write
leveling mode is programmed
DQS/DQS# delay after write leveling
mode is programmed
Write leveling setup time from rising CK,
CK# crossing to rising DQS, DQS# crossing
Write leveling hold time from rising DQS,
DQS# crossing to rising CK, CK# crossing
Write leveling output delay
WL - 2 = CWL + AL - 2
tWRAPDEN
Timing of WRA command to Power Down entry
(BC4MRS)
tREFPDEN
ODTLoff
ODTH4
ODTH8
tAONPD
tAOFPD
tAON
tAOF
tADC
tWLMRD
tWLDQSEN
tWLS
tWLH
tWLO
tWLOE
Write leveling output error
tRFC
REF command to ACT or REF command time
tREFI
Average periodic refresh interval
Rev. 2.5
0℃ to 85℃
85℃ to 95℃
27
WL + 2
+
WR + 1
-
-
1
-
1
-
-
Tmod
(min)
-
tMOD
(min)
-
tCK
4
-
4
-
4
-
tCK
6
-
6
-
6
-
tCK
2
8.5
2
8.5
2
8.5
ns
2
8.5
2
8.5
2
8.5
ns
-195
195
-225
225
-250
250
ps
0.3
0.7
0.3
0.7
0.3
0.7
tCK
0.3
0.7
0.3
0.7
0.3
0.7
tCK
40
-
40
-
40
-
tCK
25
-
25
-
25
-
tCK
140
-
165
-
195
-
ps
140
-
165
-
195
-
ps
0
7.5
0
7.5
0
9
ns
ns
ns
µs
µs
0
2
0
2
0
2
160
-
160
-
160
-
-
7.8
-
7.8
-
7.8
-
3.9
-
3.9
-
3.9
Nov. /2014
EtronTech
EM6GD08EWUC
- Multi-Purpose Register (MPR)
The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence.
Figure 8. MPR Block Diagram
Memory Core
(all banks precharged)
MRS 3
【A2】
Multipurpose register
Pre-defined data for Reads
DQ, DM, DQS, DQS#
To enable the MPR, a MODE Register Set (MRS) command must be issued to MR3 Register with bit A2 = 1. Prior
to issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP met). Once the
MPR is enabled, any subsequent RD or RDA commands will be redirected to the Multi Purpose Register. The
resulting operation, when a RD or RDA command is issued, is defined by MR3 bits A[1:0] when the MPR is enabled
as shown in table 11. When the MPR is enabled, only RD or RDA commands are allowed until a subsequent MRS
command is issued with the MPR disabled (MR3 bit A2 = 0). Note that in MPR mode RDA has the same
functionality as a READ command which means the auto precharge part of RDA is ignored. Power-Down mode,
Self-Refresh and any other non-RD/RDA command is not allowed during MPR enable mode. The RESET function
is supported during MPR enable mode.
Table 19. MPR MR3 Register Definition
MR3 A[2]
MR3 A[1:0]
MPR
MPR-Loc
0b
1b
Rev. 2.5
Function
Normal operation, no MPR transaction.
Don’t care (0b or 1b) All subsequent Reads will come from DRAM array.
All subsequent Write will go to DRAM array.
See the table11
Enable MPR mode, subsequent RD/RDA commands defined by
MR3 A[1:0].
28
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EM6GD08EWUC
- MPR Functional Description
•One bit wide logical interface via all DQ pins during READ operation.
•Register Read on x8:
•DQL[0] drive information from MPR.
•DQL[7:1] either drive the same information as DQL [0], or they drive 0b.
•Addressing during for Multi Purpose Register reads for all MPR agents:
•BA [2:0]: don’t care
•A[1:0]: A[1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
•A[2]: For BL=8, A[2] must be equal to 0b, burst order is fixed to [0,1,2,3,4,5,6,7], *) For Burst Chop 4 cases, the
burst order is switched on nibble base A [2]=0b, Burst order: 0,1,2,3 *) A[2]=1b, Burst order: 4,5,6,7 *)
•A[9:3]: don’t care
•A10/AP: don’t care
•A12/BC: Selects burst chop mode on-the-fly, if enabled within MR0.
•A11, A13, ... (if available): don’t care
•Regular interface functionality during register reads:
•Support two Burst Ordering which are switched with A2 and A[1:0]=00b.
•Support of read burst chop (MRS and on-the-fly via A12/BC)
•All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the
DDR3 SDRAM.
•Regular read latencies and AC timings apply.
•DLL must be locked prior to MPR Reads.
NOTE: *) Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Table 20. MPR MR3 Register Definition
MR3
A[2]
MR3
A[1:0]
Function
Burst Length
BL8
1b
00b
Read Predefined
Pattern for
System
Calibration
1b
01b
RFU
1b
10b
RFU
1b
11b
RFU
BC4
BC4
BL8
BC4
BC4
BL8
BC4
BC4
BL8
BC4
BC4
Read Address
Burst Order and Data Pattern
A[2:0]
000b
Burst order 0, 1, 2, 3, 4, 5, 6, 7
Pre-defined Data Pattern
[0, 1, 0, 1, 0, 1, 0, 1]
000b
Burst order 0, 1, 2, 3
Pre-defined Data Pattern
[0, 1, 0, 1]
100b
Burst order 4, 5, 6, 7
Pre-defined Data Pattern
[0, 1, 0, 1]
000b
Burst order 0, 1, 2, 3, 4, 5, 6, 7
000b
Burst order 0, 1, 2, 3
100b
Burst order 4, 5, 6, 7
000b
Burst order 0, 1, 2, 3, 4, 5, 6, 7
000b
Burst order 0, 1, 2, 3
100b
Burst order 4, 5, 6, 7
000b
Burst order 0, 1, 2, 3, 4, 5, 6, 7
000b
Burst order 0, 1, 2, 3
100b
Burst order 4, 5, 6, 7
z No Operation (NOP) Command
The No operation (NOP) command is used to instruct the selected DDR3 SDRAM to perform a NOP (CS# low and
RAS#, CAS# and WE# high). This prevents unwanted commands from being registered during idle or wait states.
Operations already in progress are not affected.
z Deselect Command
The Deselect function (CS# HIGH) prevents new commands from being executed by the DDR3 SDRAM. The DDR3
SDRAM is effectively deselected. Operations already in progress are not affected.
Rev. 2.5
29
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EM6GD08EWUC
z DLL- Off Mode
DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operations until
A0 bit set back to “0”. The MR1 A0 bit for DLL control can be switched either during initialization or later.
The DLL-off Mode operations listed below are an optional feature for DDR3. The maximum clock frequency for DLLoff Mode is specified by the parameter tCKDLL_OFF. There is no minimum frequency limit besides the need to
satisfy the refresh interval, tREFI.
Due to latency counter and timing restrictions, only one value of CAS Latency (CL) in MR0 and CAS Write Latency
(CWL) in MR2 are supported. The DLL-off mode is only required to support setting of both CL=6 and CWL=6.
DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the data Strobe to Data
relationship (tDQSQ, tQH). Special attention is needed to line up Read data to controller time domain. Comparing
with DLL-on mode, where tDQSCK starts from the rising clock edge (AL+CL) cycles after the Read command, the
DLL-off mode tDQSCK starts (AL+CL-1) cycles after the read command. Another difference is that tDQSCK may
not be small compared to tCK (it might even be larger than tCK) and the difference between tDQSCKmin and
tDQSCKmax is significantly larger than in DLL-on mode.
The timing relations on DLL-off mode READ operation have shown at the following Timing Diagram (CL=6, BL=8)
Figure 9. DLL-off mode READ Timing Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
COMMAND
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ADDRESS
Bank,
Col b
T9
T10
NOP
NOP
CK#
CK
NOP
RL (DLL_on) = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DQS#
(DLL_on)
DQS
DQ
Din
b
(DLL_on)
Din
b+1
tDQSCK(DLL_off)_min
RL (DLL_off) = AL + (CL-1) = 5
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
DQS#
(DLL_off)
DQS
DQ
Din
b
(DLL_off)
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
tDQSCK(DLL_off)_max
DQS#
(DLL_off)
DQS
DQ
Din
b
(DLL_off)
Din
b+7
NOTE 1. The tDQSCK is used here for DQS, DQS# and DQ to have a simplified diagram; the DLL_off shift will affect
both timings in the same way and the skew between all DQ and DQS, DQS# signals will still be tDQSQ.
TRANSITIONING DATA
Rev. 2.5
30
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
z DLL on/off switching procedure
DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operation until
A0 bit set back to “0”.
z DLL “on” to DLL “off” Procedure
To switch from DLL “on” to DLL “off” requires the frequency to be changed during Self-Refresh outlined in the
following procedure:
1. Starting from Idle state (all banks pre-charged, all timing fulfilled, and DRAMs On-die Termination resistors,
RTT, must be in high impedance state before MRS to MR1 to disable the DLL).
2. Set MR1 Bit A0 to “1” to disable the DLL.
3. Wait tMOD.
4. Enter Self Refresh Mode; wait until (tCKSRE) satisfied.
5. Change frequency, in guidance with “Input Clock Frequency Change” section.
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
7. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until all tMOD
timings from any MRS command are satisfied. In addition, if any ODT features were enabled in the mode
registers when Self Refresh mode was entered, the ODT signal must continuously be registered LOW until all
tMOD timings from any MRS command are satisfied. If both ODT features were disabled in the mode
registers when Self Refresh mode was entered, ODT signal can be registered LOW or HIGH.
8. Wait tXS, and then set Mode Registers with appropriate values (especially an update of CL, CWL, and WR
may be necessary. A ZQCL command may also be issued after tXS).
9. Wait for tMOD, and then DRAM is ready for next command.
Figure 10. DLL Switch Sequence from DLL-on to DLL-off
CK#
T0
T1
Ta0
Ta1
Tb0
Tc0
Td0
Td1
Te0
Te1
Tf0
CK
Notes 8
CKE
VALID
Notes 2
COMMAND
MRS
Notes 3
NOP
SRE
Notes 6
NOP
SRX
Notes 7
NOP
MRS
Notes 8
NOP
VALID
Notes 5
Notes 1
tMOD
tCKSRE
Notes 4
tCKSRX
tXS
tMOD
tCKESR
Notes 8
VALID
ODT
ODT: Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise static Low or High
NOTES:
1. Starting with Idle State, RTT in Hi-Z state
2. Disable DLL by setting MR1 Bit A0 to 1
3. Enter SR
4. Change Frequency
5. Clock must be stable tCKSRX
6. Exit SR
7. Update Mode registers with DLL off parameters setting
8. Any valid command
Rev. 2.5
31
TIME BREAK
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
z DLL “off” to DLL “on” Procedure
To switch from DLL “off” to DLL “on” (with requires frequency change) during Self-Refresh:
1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors
(RTT) must be in high impedance state before Self-Refresh mode is entered).
2. Enter Self Refresh Mode, wait until tCKSRE satisfied.
3. Change frequency, in guidance with “Input clock frequency change” section.
4. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
5. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until tDLLK timing
from subsequent DLL Reset command is satisfied. In addition, if any ODT features were enabled in the mode
registers when Self Refresh mode was entered, the ODT signal must continuously be registered LOW until
tDLLK timings from subsequent DLL Reset command is satisfied. If both ODT features are disabled in the
mode registers when Self Refresh mode was entered, ODT signal can be registered LOW or HIGH.
6. Wait tXS, then set MR1 Bit A0 to “0” to enable the DLL.
7. Wait tMRD, then set MR0 Bit A8 to “1” to start DLL Reset.
8. Wait tMRD, then set Mode registers with appropriate values (especially an update of CL, CWL, and WR may
be necessary. After tMOD satisfied from any proceeding MRS command, a ZQCL command may also be
issued during or after tDLLK).
9. Wait for tMOD, then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before
applying command requiring a locked DLL!). In addition, wait also for tZQoper in case a ZQCL command was
issued.
Figure 11. DLL Switch Sequence from DLL-off to DLL on
T0
Ta0
Ta1
Tb0
Tc0
Tc1
Td0
Te0
Tf1
Tg0
Th0
CK#
CK
CKE
VALID
tDLLK
Notes 2
COMMAND
NOP
SRE
Notes 5
NOP
SRX
Notes 6
MRS
Notes 7
MRS
Notes 8
MRS
Notes 9
VALID
Notes 4
Notes 1 ODTLoff + 1 * tCK
tCKSRE
tCKSRX
Notes 3
tXS
tMRD
tMRD
tCKESR
ODT
ODT: Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise static Low or High
TIME BREAK
NOTES:
1. Starting with Idle State
2. Enter SR
3. Change Frequency
4. Clock must be stable tCKSRX
5. Exit SR
6. Set DLL on by MR1 A0 = 0
7. Start DLL Reset by MR0 A8=1
8. Update Mode registers
9. Any valid command
Rev. 2.5
32
Don't Care
Nov. /2014
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EM6GD08EWUC
z Jitter Notes
NOTE 1. Unit ‘tCK(avg)’ represents the actual tCK(avg) of the input clock under operation. Unit ‘nCK’
represents one clock cycle of the input clock, counting the actual clock edges.ex) tMRD = 4 [nCK]
means; if one Mode Register Set command is registered at Tm, another Mode Register Set command
may be registered at Tm+4, even if (Tm+4 - Tm) is 4 x tCK(avg) + tERR(4per),min.
NOTE 2. These parameters are measured from a command/address signal (CKE, CS#, RAS#, CAS#, WE#,
ODT, BA0, A0, A1, etc.) transition edge to its respective clock signal (CK/CK#) crossing. The spec
values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup
and hold are relative to the clock signal crossing that latches the command/address. That is, these
parameters should be met whether clock jitter is present or not.
NOTE 3. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective
clock signal (CK, CK#) crossing. The spec values are not affected by the amount of clock jitter
applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these
parameters should be met whether clock jitter is present or not.
NOTE 4. These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its
respective data strobe signal (DQS, DQS#) crossing.
NOTE 5. For these parameters, the DDR3 SDRAM device supports tnPARAM [nCK] = RU{ tPARAM [ns] /
tCK(avg) [ns] }, which is in clock cycles, assuming all input clock jitter specifications are satisfied.
NOTE 6. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(mper),act of the input clock, where 2 <= m <= 12. (output deratings are relative to the SDRAM
input clock.)
NOTE 7. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT(per),act of the input clock. (output deratings are relative to the SDRAM input clock.)
Table 21. Input clock jitter spec parameter
Parameter
Symbol
-10
-12
-15
Clock period jitter
tJIT (per)
Clock period jitter during DLL locking period
tJIT (per,lck)
-50
Cycle to cycle clock period jitter
tJIT (cc)
120
140
160
ps
Cycle to cycle clock period jitter during DLL locking period
tJIT (cc,lck)
100
120
140
ps
Cumulative error across 2 cycles
tERR (2per)
-88
88
-103
103
-118
118
ps
Cumulative error across 3 cycles
tERR (3per)
-105
105
-122
122
-140
140
ps
Cumulative error across 4 cycles
tERR (4per)
-117
117
-136
136
-155
155
ps
Cumulative error across 5 cycles
tERR (5per)
-126
126
-147
147
-168
168
ps
Cumulative error across 6 cycles
tERR (6per)
-133
133
-155
155
-177
177
ps
Cumulative error across 7 cycles
tERR (7per)
-139
139
-163
163
-186
186
ps
Cumulative error across 8 cycles
tERR (8per)
-145
145
-169
169
-193
193
ps
Cumulative error across 9 cycles
tERR (9per)
-150
150
-175
175
-200
200
ps
Cumulative error across 10 cycles
tERR (10per)
-154
154
-180
180
-205
205
ps
Cumulative error across 11 cycles
tERR (11per)
-158
158
-184
184
-210
210
ps
Cumulative error across 12 cycles
tERR (12per)
Cumulative error across n cycles, n=13...50, inclusive
tERR (nper)
-161 161 -188 188 -215 215
tERR (nper)min = (1+0.68ln(n)) * tJIT (per)min
tERR (nper)max = (1+0.68ln(n)) * tJIT (per)max
Rev. 2.5
33
Max.
60
Min.
-70
Max.
70
Min.
-80
Max.
80
50
-60
60
-70
70
Unit
Min.
-60
ps
ps
ps
ps
Nov. /2014
EtronTech
EM6GD08EWUC
z Input Clock frequency change
Once the DDR3 SDRAM is initialized, the DDR3 SDRAM requires the clock to be “stable” during almost all states of
normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock
period is not allowed to deviate except for what is allowed for by the clock jitter and SSC (spread spectrum clocking)
specification.
The input clock frequency can be changed from one stable clock rate to another stable clock rate under two
conditions: (1) Self-Refresh mode and (2) Precharge Power-Down mode. Outside of these two modes, it is illegal to
change the clock frequency.
For the first condition, once the DDR3 SDRAM has been successfully placed in to Self-Refresh mode and tCKSRE
has been satisfied, the state of the clock becomes a don’t care. Once a don’t care, changing the clock frequency is
permissible, provided the new clock frequency is stable prior to tCKSRX. When entering and exiting Self-Refresh
mode of the sole purpose of changing the clock frequency, the Self-Refresh entry and exit specifications must still
be met. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum
operating frequency specified for the particular speed grade.
The second condition is when the DDR3 SDRAM is in Precharge Power-Down mode (either fast exit mode or slow
exit mode). If the RTT_Nom feature was enabled in the mode register prior to entering Precharge power down
mode, the ODT signal must continuously be registered LOW ensuring RTT is in an off state. If the RTT_Nom
feature was disabled in the mode register prior to entering Precharge power down mode, RTT will remain in the off
state. The ODT signal can be registered either LOW or HIGH in this case. A minimum of tCKSRE must occur after
CKE goes LOW before the clock frequency may change. The DDR3 SDRAM input clock frequency is allowed to
change only within the minimum and maximum operating frequency specified for the particular speed grade. During
the input clock frequency change, ODT and CKE must be held at stable LOW levels. Once the input clock
frequency is changed, stable new clocks must be provided to the DRAM tCKSRX before precharge Power Down
may be exited; after Precharge Power Down is exited and tXP has expired, the DLL must be RESET via MRS.
Depending on the new clock frequency additional MRS commands may need to be issued to appropriately set the
WR, CL, and CWL with CKE continuously registered high. During DLL re-lock period, ODT must remain LOW and
CKE must remain HIGH. After the DLL lock time, the DRAM is ready to operate with new clock frequency.
Figure 12. Change Frequency during Precharge Power-down
PREVIOUS CLOCK FREQUENCY
T0
T1
T2
NEW CLOCK FREQUENCY
Ta0
Tb0
Tc0
Tc1
Td0
Td1
Te0
Te1
CK#
CK
tCH
tCL
tCKSRE
tCK
tIH
tCKSRX
tCHb tCLb
tCKb
tCHb tCLb
tCKb
tCHb tCLb
tCKb
tCKE
tIS
tIH
CKE
tIS
tCPDED
COMMAND
NOP
NOP
NOP
NOP
NOP
MRS
NOP
DLL
RESET
ADDRESS
VALID
VALID
tXP
tIH
tAOFPD / tAOF
ODT
tIS
DQS#
DQS
High-Z
DQ
High-z
DM
Enter PRECHARGE
Power-Down Mode
Frequency Change
Exit PRECHARGE
Power-Down Mode
tDLLK
Indicates a break
in time scale
NOTES
Don't Care
1. Applicable for both SLOW EXIT and FAST EXIT Precharge Power-down.
2. tAOFPD and tAOF must be statisfied and outputs High-Z prior to T1;refer to ODT timing section for exact requirements
3. If the RTT_NOM feature was enabled in the mode register prior to entering Precharge power down mode, the ODT
signal must continuously be registered LOW ensuring RTT is in an off state, as shown in Figure 13. If the RTT_NOM feature was disabled in the mode
register prior to entering Precharge power down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.
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z Write Leveling
For better signal integrity, DDR3 memory adopted fly by topology for the commands, addresses, control signals,
and clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect,
causes flight time skew between clock and strobe at every DRAM on DIMM. It makes it difficult for the Controller to
maintain tDQSS, tDSS, and tDSH specification. Therefore, the controller should support “write leveling” in DDR3
SDRAM to compensate the skew.
The memory controller can use the “write leveling” feature and feedback from the DDR3 SDRAM to adjust the
DQS – DQS# to CK – CK# relationship. The memory controller involved in the leveling must have adjustable delay
setting on DQS – DQS# to align the rising edge of DQS – DQS# with that of the clock at the DRAM pin. DRAM
asynchronously feeds back CK – CK#, sampled with the rising edge of DQS – DQS#, through the DQ bus. The
controller repeatedly delays DQS – DQS# until a transition from 0 to 1 is detected. The DQS – DQS# delay
established though this exercise would ensure tDQSS specification.
Besides tDQSS, tDSS, and tDSH specification also needs to be fulfilled. One way to achieve this is to combine the
actual tDQSS in the application with an appropriate duty cycle and jitter on the DQS- DQS# signals. Depending on
the actual tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better than the
absolute limits provided in “AC Timing Parameters” section in order to satisfy tDSS and tDSH specification.
DQS/DQS# driven by the controller during leveling mode must be determined by the DRAM based on ranks
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations x8.
Therefore, a separate feedback mechanism should be available for each byte lane.
Figure 13. Write Leveling Concept
T0
Source
T1
T2
T3
T4
T5
T6
T7
CK#
CK
Diff_DQS
Tn
Destination
T0
T1
T2
T3
T4
T5
T6
CK#
CK
Diff_DQS
DQ
Diff_DQS
DQ
Rev. 2.5
0 or 1
0
0
0
Push DQS to capture
0-1 transition
0 or 1
1
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z DRAM setting for write leveling and DRAM termination unction in that mode
DRAM enters into Write leveling mode if A7 in MR1 set “High” and after finishing leveling, DRAM exits from write
leveling mode if A7 in MR1 set “Low”. Note that in write leveling mode, only DQS/DQS# terminations are activated
and deactivated via ODT pin not like normal operation.
Table 22. DRAM termination function in the leveling mode
ODT pin at DRAM
DQS, DQS# termination
DQs termination
De-asserted
Asserted
off
on
off
off
Note 1: In write leveling mode with its output buffer disabled (MR1[bit7]=1 with MR1[bit12]=1) all RTT_Nom settings are
allowed; in Write Leveling Mode with its output buffer enabled (MR1[bit7]=1 with MR1[bit12]=0) only RTT_Nom
settings of RZQ/2, RZQ/4, and RZQ/6 are allowed.
z Procedure Description
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling
mode, the DQ pins are in undefined driving mode. During write leveling mode, only NOP or Deselect commands are
allowed. As well as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the
output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT after tMOD, time at
which DRAM is ready to accept the ODT signal.
Controller may drive DQS low and DQS# high after a delay of tWLDQSEN, at which time DRAM has applied on-die
termination on these signals. After tDQSL and tWLMRD controller provides a single DQS, DQS# edge which is
used by the DRAM to sample CK – CK# driven from controller. tWLMRD(max) timing is controller dependent.
DRAM samples CK – CK# status with rising edge of DQS and provides feedback on all the DQ bits asynchronously
after tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no
read strobes (DQS/DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or
decrement DQS – DQS# delay setting and launches the next DQS/DQS# pulse after some time, which is controller
dependent. Once a 0 to 1 transition is detected, the controller locks DQS – DQS# delay setting and write leveling is
achieved for the device.
Figure 14. Timing details of Write Leveling sequence
(DQS – DQS# is capturing CK – CK# low at T1 and CK – CK# high at T2)
T2
T1 tWLH
Notes 5
tWLS
tWLS
tWLH
CK#
CK
Notes 1
COMMAND
MRS
Notes 2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tMOD
ODT
Notes 6
Notes 4
tDQSL
tWLDQSEN
Notes 6
Notes 6
tDQSH
tDQSL
tDQSH
Notes 6
Diff_DQS
tWLMRD
tWLO
One Prime DQ:
tWLO
Notes 3
Prime DQ
tWLO
Late Remaining DQs
Early Remaining DQs
tWLO
tWLOE
All DQs are Prime:
Notes 3
tWLO
Late Prime DQs
Notes 3
tWLMRD
tWLOE
tWLO
tWLO
Early Prime DQs
tWLO
tWLOE
NOTES
1. MRS: Load MR1 to enter write leveling mode.
UNDEFINED Driving MODE TIME BREAK
Don't Care
2. NOP: NOP or Deselect.
3. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on one DQ, the remaining DQs must be driven low, as shown in above Figure,
and maintained at this state through out the leveling procedure.
4. diff_DQS is the differential data strobe (DQS, DQS#). Timing reference points are the zero crossings. DQS is shown with solid line, DQS# is shown with dotted line.
5. CK, CK# : CK is shown with solid dark line, where as CK# is drawn with dotted line.
6. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH(min) and tDQSL(min) as defined for regular Writes; the max pulse width is system dependent.
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z Write Leveling Mode Exit
The following sequence describes how Write Leveling Mode should be exited:
1. After the last rising strobe edge (see ~T0), stop driving the strobe signals (see ~Tc0). Note: From now on, DQ
pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command
(Te1).
2. Drive ODT pin low (tIS must be satisfied) and keep it low (see Tb0).
3. After the RTT is switched off, disable Write Level Mode via MRS command (see Tc2).
4. After tMOD is satisfied (Te1), any valid command may be registered. (MR commands may be issued after
tMRD (Td1).
Figure 15. Timing details of Write Leveling exit
CK#
T0
T1
T2
Ta0
Tb0
Tc0
Tc1
Tc2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
MRS
Td0
Td1
NOP
VALID
Te0
Te1
CK
COMMAND
NOP
VALID
tMRD
MR1
ADDRESS
VALID
VALID
tMOD
tIS
ODT
ODTLoff
RTT_DQS_DQS#
tAOFmin
RTT_NOM
tAOFmax
DQS_DQS#
RTT_DQ
tWLO
Notes 1
Result = 1
DQ
UNDEFINED Driving MODE
TRANSITIONING
TIME BREAK
Don't Care
NOTES:
1. The DQ result = 1 between Ta0 and Tc0 is a result of the DQS, DQS# signals capturing CK high just after the T0 state.
z Extended Temperature Usage
Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3
SDRAM devices support the following options or requirements referred to in this material:
1. Auto Self-refresh supported
2. Extended Temperature Range supported
3. Double refresh required for operation in the Extended Temperature Range (applies only for devices supporting
the Extended Temperature Range)
z Auto Self-Refresh mode - ASR mode
DDR3 SDRAM provides an Auto-Refresh mode (ASR) for application ease. ASR mode is enabled by setting MR2
bit A6=1 and MR2 bit A7=0. The DRAM will manage Self-Refresh entry in either the Normal or Extended
Temperature Ranges. In this mode, the DRAM will also manage Self-Refresh power consumption when the DRAM
operating temperature changes, lower at low temperatures and higher at high temperatures. If the ASR option is not
supported by DRAM, MR2 bit A6 must set to 0. If the ASR option is not enabled (MR2 bit A6=0), the SRT bit (MR2
bit A7) must be manually programmed with the operating temperature range required during Self-Refresh operation.
Support of the ASR option does not automatically imply support of the Extended Temperature Range.
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z Self-Refresh Temperature Range - SRT
SRT applies to devices supporting Extended Temperature Range only. If ASR=0, the Self-Refresh Temperature
(SRT) Range bit must be programmed to guarantee proper self-refresh operation. If SRT=0, then the DRAM will set
an appropriate refresh rate for Self-Refresh operation in the Normal Temperature Range. If SRT=1, then the DRAM
will set an appropriate, potentially different, refresh rate to allow Self-Refresh operation in either the Normal or
Extended Temperature Ranges. The value of the SRT bit can effect self-refresh power consumption, please refer to
IDD table for details.
Table 23. Self-Refresh mode summary
MR2
A[6]
MR2
A[7]
0
0
Self-Refresh operation
Self-Refresh rate appropriate for the Normal Temperature Range
Allowed Operating
Temperature Range
for Self-Refresh mode
Normal (0 ~ 85C)
Self-Refresh appropriate for either the Normal or Extended Temperature
Normal and Extended
Ranges.The DRAM must support Extended Temperature Range. The
value of the SRT bit can effect self-refresh power consumption, please
(0 ~ 95C)
refer to the IDD table for details.
ASR enabled (for devices supporting ASR and Normal Temperature
Normal (0 ~ 85C)
Range).Self-Refresh power consumption is temperature dependent.
0
1
1
0
1
0
ASR enabled (for devices supporting ASR and Extended Temperature
Range).Self-Refresh power consumption is temperature dependent.
1
1
Illegal
Normal and Extended
(0 ~ 95C)
z ACTIVE Command
The ACTIVE command is used to open (or activate) a row in a particular bank for subsequent access. The value on
the BA0-BA2 inputs selects the bank, and the addresses provided on inputs A0-A14 selects the row. These rows
remain active (or open) for accesses until a precharge command is issued to that bank. A PRECHARGE command
must be issued before opening a different row in the same bank.
z PRECHARGE Command
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks.
The bank(s) will be available for a subsequent row activation a specified time (tRP) after the PRECHARGE
command is issued, except in the case of concurrent auto precharge, where a READ or WRITE command to a
different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate
any other timing parameters. Once a bank has been precharged, it is in the idle state and must be activated prior to
any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if there is no
open row in that bank (idle bank) or if the previously open row is already in the process of precharging. However,
the precharge period will be determined by the last PRECHARGE command issued to the bank.
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READ Operation
z Read Burst Operation
During a READ or WRITE command DDR3 will support BC4 and BL8 on the fly using address A12 during the
READ or WRITE (AUTO PRECHARGE can be enabled or disabled).
A12=0, BC4 (BC4 = burst chop, tCCD=4)
A12=1, BL8
A12 will be used only for burst length control, not a column address.
Figure 16. READ Burst Operation RL=5 (AL=0, CL=5, BL=8)
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Notes 3
COMMAND
Notes 4
ADDRESS
Bank,
Col n
tRPRE
tRPST
DQS, DQS#
Notes 2
DQ
Dout
n
CL = 5
Dout
n+1
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
RL = AL + CL
NOTES:
1. BL8, RL = 5, AL = 0, CL = 5.
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
TRANSITIONING DATA
Don't Care
Figure 17. READ Burst Operation RL=9 (AL=4, CL=5, BL=8)
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Notes 3
COMMAND
Notes 4
ADDRESS
Bank,
Col n
tRPRE
DQS, DQS#
Notes 2
DQ
AL = 4
Dout
n
CL = 5
Dout
n+1
Dout
n+2
RL = AL + CL
NOTES:
1. BL8, RL = 9, AL = (CL-1), CL = 5.
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
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z READ Timing Definitions
Read timing is shown in the following figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, CK#. tDQSCK is the
actual position of a rising strobe edge relative to CK, CK#. tQSH describes the DQS, DQS# differential output high
time. tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest invalid
transition of the associated DQ pins.
Falling data strobe edge parameters:
tQSL describes the DQS, DQS# differential output low time. tDQSQ describes the latest valid transition of the
associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
Figure 18. READ timing Definition
CK#
CK
tDQSCK,min
tDQSCK,max
tDQSCK,min
Rising Strobe
Region
Rising Strobe
Region
tDQSCK
DQS#
DQS
tDQSQ
tDQSCK,max
tDQSCK
tQSH
tQSL
tQH
tQH
tDQSQ
Associated
DQ Pins
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z Read Timing; Clock to Data Strobe relationship
Clock to Data Strobe relationship is shown in the following figure and is applied when the DLL is enabled and
locked.
Rising data strobe edge parameters:
tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK and CK#. tDQSCK
is the actual position of a rising strobe edge relative to CK and CK#. tQSH describes the data strobe high pulse
width.
Falling data strobe edge parameters:
tQSL describes the data strobe low pulse width.
Figure 19. Clock to Data Strobe relationship
RL Measured
to this point
CLK#
CLK
tDQSCK (min)
tLZ(DQS) min
DQS, DQS#
Early Strobe
tQSL
tQSH
tQSL
tQSH
tDQSCK (min)
tHZ(DQS) (min)
tQSL
tQSH
tRPRE
tLZ(DQS) max
DQS, DQS#
Late Strobe
tDQSCK (min)
tDQSCK (min)
tRPST
Bit 0
Bit 1
tDQSCK (max)
tRPRE
Bit 2
tQSH
Bit 0
Bit 3
tDQSCK (max)
tQSL
Bit 1
Bit 4
tQSH
Bit 2
Bit 5
tDQSCK (max)
tQSL
Bit 3
Bit 6
tQSH
Bit 4
tHZ(DQS) (max)
Bit 7
tDQSCK (max)
tRPST
tQSL
Bit 5
Bit 6
Bit 7
NOTES:
1. Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min) or tDQSCK(max). Instead, rising strobe
edge can vary between tDQSCK(min) and tDQSCK(max).
2. Notwithstanding note 1, a rising strobe edge with tDQSCK(max) at T(n) can not be immediately followed by a rising strobe edge
with tDQSCK(min) at T(n+1). This is because other timing relationships (tQSH, tQSL) exist: if tDQSCK(n+1) < 0: tDQSCK(n) < 1.0 tCK (tQSHmin + tQSLmin) - | tDQSCK(n+1) |
3. The DQS, DQS# differential output high time is defined by tQSH and the DQS, DQS# differential output low time is defined by tQSL.
4. Likewise, tLZ(DQS)min and tHZ(DQS)min are not tied to tDQSCKmin (early strobe case) and tLZ(DQS)max and tHZ(DQS)max are
not tied to tDQSCKmax (late strobe case).
5. The minimum pulse width of read preamble is defined by tRPRE(min).
6. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZDSQ(max) on the right side.
7. The minimum pulse width of read postamble is defined by tRPST(min).
8. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side.
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z Read Timing; Data Strobe to Data Relationship
The Data Strobe to Data relationship is shown in the following figure and is applied when the DLL and enabled and
locked.
Rising data strobe edge parameters:
- tDQSQ describes the latest valid transition of the associated DQ pins.
- tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
- tDQSQ describes the latest valid transition of the associated DQ pins.
- tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
Figure 20. Data Strobe to Data Relationship
CK#
T0
T1
READ
NOP
T2
T3
T4
T5
T6
T7
T8
T9
T10
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Notes 3
COMMAND
RL = AL +CL
Notes 4
ADDRESS
Bank,
Col n
tDQSQ (max)
tDQSQ (max)
tRPST
DQS,DQS#
tRPRE
tQH
tQH
Notes 2
DQ
Dout
n
(Last data valid)
Dout
n+1
Dout
n+2
Dout
n+4
Dout
n+3
Dout
n+5
Dout
n+6
Dout
n+7
Notes 2
DQ
Dout
n
(First data no longer valid)
Dout
n
All DQs collectively
Dout
n+1
Dout
n+1
Dout
n+2
Dout
n+2
Dout
n+3
Dout
n+3
Dout
n+4
Dout
n+4
Dout
n+5
Dout
n+5
Dout
n+6
Dout
n+6
Dout
n+7
Dout
n+7
NOTES:
TRANSITIONING DATA
1. BL = 8, RL = 5 (AL = 0, CL = 5)
2. DOUT n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
5. Output timings are referenced to VDDQ/2, and DLL on for locking.
6. tDQSQ defines the skew between DQS,DQS# to Data and does not define DQS,DQS# to Clock.
7. Early Data transitions may not always happen at the same DQ. Data transitions of a DQ can vary (either early or late) within a burst.
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Write Operation
z DDR3 Burst Operation
During a READ or WRITE command, DDR3 will support BC4 and BL8 on the fly using address A12 during the
READ or WRITE (Auto Precharge can be enabled or disabled).
A12=0, BC4 (BC4 = Burst Chop, tCCD=4)
A12=1, BL8
A12 is used only for burst length control, not as a column address.
z WRITE Timing Violations
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make
sure the DRAM works properly. However, it is desirable for certain minor violations that the DRAM is guaranteed
not to “hang up” and errors be limited to that particular operation.
For the following, it will be assumed that there are no timing violations with regard to the Write command itself
(including ODT, etc.) and that it does satisfy all timing requirements not mentioned below.
z Data Setup and Hold Violations
Should the strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a write
burst, then wrong data might be written to the memory location addressed with the offending WRITE command.
Subsequent reads from that location might result in unpredictable read data, however, the DRAM will work properly
otherwise.
z Strobe to Strobe and Strobe to Clock Violations
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements
(tDSS, tDSH, tDQSS) be violated, for any of the strobe edges associated with a Write burst, then wrong data might
be written to the memory location addressed with the offending WRITE command. Subsequent reads from that
location might result in unpredictable read data, however the DRAM will work properly otherwise.
z Write Timing Parameters
This drawing is for example only to enumerate the strobe edges that “belong” to a write burst. No actual timing
violations are shown here. For a valid burst all timing parameters for each edge of a burst need to be satisfied (not
only for one edge ).
z Refresh Command
The Refresh command (REF) is used during normal operation of the DDR3 SDRAMs. This command is not
persistent, so it must be issued each time a refresh is required. The DDR3 SDRAM requires Refresh cycles at an
average periodic interval of tREFI. When CS#, RAS#, and CAS# are held Low and WE# High at the rising edge of
the clock, the chip enters a Refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of
the precharge time tRP(min) before the Refresh Command can be applied. The refresh addressing is generated by
the internal refresh controller. This makes the address bits “Don’t Care” during a Refresh command. An internal
address counter suppliers the address during the refresh cycle. No control of the external address bus is required
once this cycle has started. When the refresh cycle has completed, all banks of the SDRAM will be in the
precharged (idle) state. A delay between the Refresh Command and the next valid command, except NOP or DES,
must be greater than or equal to the minimum Refresh cycle time tRFC(min).
In general, a Refresh command needs to be issued to the DDR3 SDRAM regularly every tREFI interval. To allow for
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is
provided. A maximum of 8 Refresh commands can be postponed during operation of the DDR3 SDRAM, meaning
that at no point in time more than a total of 8 Refresh commands are allowed to be postponed. In case that 8
Refresh commands are postponed in a row, the resulting maximum interval between the surrounding Refresh
commands is limited to 9 x tREFI. A maximum of 8 additional Refresh commands can be issued in advance (“pulled
in”), with each one reducing the number of regular Refresh commands required later by one. Note that pulling in
more than 8 Refresh commands in advance does not further reduce the number of regular Refresh commands
required later, so that the resulting maximum interval between two surrounding Refresh command is limited to 9 x
tREFI. Before entering Self-Refresh Mode, all postponed Refresh commands must be executed.
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z Self-Refresh Operation
The Self-Refresh command can be used to retain data in the DDR3 SDRAM, even if the reset of the system is
powered down. When in the Self-Refresh mode, the DDR3 SDRAM retains data without external clocking. The
DDR3 SDRAM device has a built-in timer to accommodate Self-Refresh operation. The Self-Refresh Entry (SRE)
Command is defined by having CS#, RAS#, CAS#, and CKE held low with WE# high at the rising edge of the clock.
Before issuing the Self-Refreshing-Entry command, the DDR3 SDRAM must be idle with all bank precharge state
with tRP satisfied. Also, on-die termination must be turned off before issuing Self-Refresh-Entry command, by either
registering ODT pin low “ODTL + 0.5tCK” prior to the Self-Refresh Entry command or using MRS to MR1 command.
Once the Self-Refresh Entry command is registered, CKE must be held low to keep the device in Self-Refresh
mode. During normal operation (DLL on), MR1 (A0=0), the DLL is automatically disabled upon entering SelfRefresh and is automatically enabled (including a DLL-RESET) upon exiting Self-Refresh.
When the DDR3 SDRAM has entered Self-Refresh mode, all of the external control signals, except CKE and
RESET#, are “don’t care”. For proper Self-Refresh operation, all power supply and reference pins (VDD, VDDQ,
VSS, VSSQ, VRefCA, and VRefDQ) must be at valid levels. The DRAM initiates a minimum of one Refresh
command internally within tCKE period once it enters Self-Refresh mode.
The clock is internally disabled during Self-Refresh operation to save power. The minimum time that the DDR3
SDRAM must remain in Self-Refresh mode is tCKE. The user may change the external clock frequency or halt the
external clock tCKSRE after Self-Refresh entry is registered; however, the clock must be restarted and stable
tCKSRX before the device can exit Self-Refresh mode.
The procedure for exiting Self-Refresh requires a sequence of events. First, the clock must be stable prior to CKE
going back HIGH. Once a Self-Refresh Exit Command (SRX, combination of CKE going high and either NOP or
Deselect on command bus) is registered, a delay of at least tXS must be satisfied before a valid command not
requiring a locked DLL can be issued to the device to allow for any internal refresh in progress.
Before a command which requires a locked DLL can be applied, a delay of at least tXSDLL and applicable ZQCAL
function requirements [TBD] must be satisfied.
Before a command that requires a locked DLL can be applied, a delay of at least tXSDLL must be satisfied.
Depending on the system environment and the amount of time spent in Self-Refresh, ZQ calibration command may
be required to compensate for the voltage and temperature drift as described in “ZQ Calibration Commands”. To
issue ZQ calibration commands, applicable timing requirements must be satisfied.
CKE must remain HIGH for the entire Self-Refresh exit period tXSDLL for proper operation except for Self-Refresh
re-entry. Upon exit from Self-Refresh, the DDR3 SDRAM can be put back into Self-Refresh mode after waiting at
least tXS period and issuing one refresh command (refresh period of tRFC). NOP or deselect commands must be
registered on each positive clock edge during the Self-Refresh exit interval tXS. ODT must be turned off during
tXSDLL.
The use of Self-Refresh mode instructs the possibility that an internally times refresh event can be missed when
CKE is raised for exit from Self-Refresh mode. Upon exit from Self-Refresh, the DDR3 SDRAM requires a minimum
of one extra refresh command before it is put back into Self-Refresh mode.
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Power-Down Modes
z Power-Down Entry and Exit
Power-Down is synchronously entered when CKE is registered low (along with NOP or Deselect command). CKE is
not allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or
read/write operation are in progress. CKE is allowed to go low while any of other operation such as row activation,
precharge or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until
finishing those operation.
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read
operation and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification
as well proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM
specifications.
During Power-Down, if all banks are closed after any in progress commands are completed, the device will be in
precharge Power-Down mode; if any bank is open after in progress commands are completed, the device will be in
active Power-Down mode.
Entering Power-down deactivates the input and output buffers, excluding CK, CK, ODT, CKE, and RESET#.
To protect DRAM internal delay on CKE line to block the input signals, multiple NOP or Deselect commands are
needed during the CKE switch off and cycle(s) after, this timing period are defined as tCPDED. CKE_low will result
in deactivation of command and address receivers after tCPDED has expired.
Table 24. Power-Down Entry Definitions
Status of DRAM
MRS bit A12
DLL
Active
(A Bank or more open)
Don't Care
On
PD Exit Relevant Parameters
Fast
tXP to any valid command.
Precharged
(All Banks Precharged)
0
Off
Slow
tXP to any valid command. Since it is in
precharge state, commands here will be ACT,
AR, MRS/EMRS, PR or PRA.
tXPDLL to commands who need DLL to
operate, such as RD, RDA or ODT control line.
Precharged
(All Banks Precharged)
1
On
Fast
tXP to any valid command.
Also the DLL is disabled upon entering precharge power-down (Slow Exit Mode), but the DLL is kept enabled
during precharge power-down (Fast Exit Mode) or active power-down. In power-down mode, CKE low, RESET#
high, and a stable clock signal must be maintained at the inputs of the DD3 SDRAM, and ODT should be in a valid
state but all other input signals are “Don’t care” (If RESET# goes low during Power-Down, the DRAM will be out of
PD mode and into reset state).
CKE low must be maintain until tCKE has been satisfied. Power-down duration is limited by 9 times tREFI of the
device. The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect
command).CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be
applied with power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined
at AC spec table of this datasheet.
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On-Die Termination (ODT)
On-die termination (ODT) is a feature that enables the DRAM to enable/disable and turn on/off termination
resistance for each DQ, DQS, DQS#, and DM for the x8 configurations (and TDQS, TDQS# for the x8 configuration,
when enabled).
ODT is designed to improve signal integrity of the memory channel by enabling the DRAM controller to
independently turn on/off the DRAM＇s internal termination resistance for any grouping of DRAM devices. ODT is
not supported during DLL disable mode (simple functional representation shown below). The switch is enabled by
the internal ODT control logic, which uses the external ODT ball and other control information.
Figure 21. Functional representation of ODT
ODT
VDDQ / 2
RTT
To other circuitry
like RCV,...
Switch
DQ, DQS,
DM, TDQS
The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control
information. The value of RTT is determined by the settings of Mode Register bits. The ODT pin will be ignored if
the Mode Register MR1 and MR2 are programmed to disable ODT and in self-refresh mode.
z ODT Mode Register and ODT Truth Table
The ODT Mode is enabled if either of MR1 {A2, A6, A9} or MR2 {A9, A10} are non-zero. In this case, the value of
RTT is determined by the settings of those bits.
Application: Controller sends WR command together with ODT asserted.
One possible application: The rank that is being written to provides termination.
DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR)
DRAM does not use any write or read command decode information.
Table 25. Termination Turth Table
ODT pin
DRAM Termination State
0
1
OFF
On, (Off, if disabled by MR1 (A2, A6, A9) and MR2 (A9, A10) in gereral)
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z Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down
definition, these modes are:
- Any bank active with CKE high
- Refresh with CKE high
- Idle mode with CKE high
- Active power down mode (regardless of MR0 bit A12)
- Precharge power down mode if DLL is enabled during precharge power down by MR0 bit A12
The direct ODT feature is not supported during DLL-off mode. The on-die termination resistors must be disabled by
continuously registering the ODT pin low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a
mode register set command during DLL-off mode.
In synchronous ODT mode, RTT will be turned on ODTLon clock cycles after ODT is sampled high by a rising clock
edge and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency is
tied to the write latency (WL) by: ODTLon = WL - 2; ODTLoff = WL-2.
z ODT Latency and Posted ODT
In synchronous ODT Mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to
the ODT signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive
Latency (AL) relative to the external ODT signal. ODTLon = CWL + AL - 2; ODTLoff = CWL + AL - 2. For details,
refer to DDR3 SDRAM latency definitions.
Table 26. ODT Latency
Symbol
ODTLon
ODTLoff
Parameter
ODT turn on
Latency
ODT turn off
Latency
DDR3-1333
DDR3-1600
DDR3-1866
Unit
WL – 2 = CWL + AL -2
tCK
WL – 2 = CWL + AL -2
tCK
z Timing Parameters
In synchronous ODT mode, the following timing parameters apply: ODTLon, ODTLoff, tAON min/max, tAOF
min/max.
Minimum RTT turn-on time (tAON min) is the point in time when the device leaves high impedance and ODT
resistance begins to turn on. Maximum RTT turn-on time (tAON max) is the point in time when the ODT resistance
is fully on. Both are measured from ODTLon.
Minimum RTT turn-off time (tAOF min) is the point in time when the device starts to turn off the ODT resistance.
Maximum RTT turn off time (tAOF max) is the point in time when the on-die termination has reached high
impedance. Both are measured from ODTLoff.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the
SDRAM with ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the write
command. ODTH4 and ODTH8 are measured from ODT registered high to ODT registered low or from the
registration of a write command until ODT is registered low.
z ODT during Reads
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle
before the read preamble by driving the ODT pin low appropriately. RTT may not be enabled until the end of the
post-amble as shown in the following figure. DRAM turns on the termination when it stops driving which is
determined by tHZ. If DRAM stops driving early (i.e. tHZ is early), then tAONmin time may apply. If DRAM stops
driving late (i.e. tHZ is late), then DRAM complies with tAONmax timing. Note that ODT may be disabled earlier
before the Read and enabled later after the Read than shown in this example.
.
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Figure 22. ODT must be disabled externally during Reads by driving ODT low
(CL=6; AL=CL-1=5; RL=AL+CL=11; CWL=5; ODTLon=CWL+AL-2=8; ODTLoff=CWL+AL-2=8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
COMMAND
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ADDRESS
VALID
CK#
T15
T16
T17
NOP
NOP
CK
NOP
ODTLon = CWL + AL - 2
ODTLoff = CWL + AL - 2
ODT
tAOF(min)
RTT_NOM
RTT_NOM
RTT
tAOF(max)
RL = AL + CL
tAON(max)
DQS, DQS#
Din
b
DQ
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
TRANSITIONING DATA
Don't Care
z Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the
termination strength of the DDR3 SDRAM can be changed without issuing an MRS command. This requirement is
supported by the “Dynamic ODT” feature as described as follows:
Functional Description
The Dynamic ODT Mode is enabled if bit (A9) or (A10) of MR2 is set to ‘1’. The function is described as follows:
Two RTT values are available: RTT_Nom and RTT_WR.
- The value for RTT_Nom is preselected via bits A[9,6,2] in MR1.
- The value for RTT_WR is preselected via bits A[10,9] in MR2.
During operation without write commands, the termination is controlled as follows:
- Nominal termination strength RTT_Nom is selected.
- Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.
When a Write command (WR, WRA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is
enabled, the termination is controlled as follows:
- A latency ODTLcnw after the write command, termination strength RTT_WR is selected.
- A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected
OTF) after the write command, termination strength RTT_Nom is selected.
- Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.
The following table shows latencies and timing parameters which are relevant for the on-die termination control in
Dynamic ODT mode.
The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set RTT_WR, MR2
[A10,A9 = [0,0], to disable Dynamic ODT externally.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the
SDRAM with ODT high, then ODT must remain high until ODTH4 (BL=4) or ODTH8 (BL=8) after the Write
command. ODTH4 and ODTH8 are measured from ODT registered high to ODT registered low or from the
registration of Write command until ODT is register low.
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Table 27. Latencies and timing parameters relevant for Dynamic ODT
Name and
Definition for all DDR3
Abbr.
Defined from
Defined to
Unit
Description
speed pin
ODT turn-on
registering external
turning
ODTLon
ODTLon=WL-2
tCK
Latency
ODT signal high
termination on
ODT turn-off
registering external
turning
ODTLoff
ODTLoff=WL-2
tCK
Latency
ODT signal low
termination off
change RTT
ODT Latency for
strength from
changing from
registering external
ODTLcnw=WL-2
tCK
ODTLcnw
RTT_Nom to
RTT_Nom to
write command
RTT_WR
RTT_WR
change RTT
ODT Latency for
strength from
change from
registering external
ODTLcwn4=4+ODTLoff
tCK
ODTLcwn4
RTT_WR to
RTT_WR to
write command
RTT_Nom
RTT_Nom (BL=4)
change RTT
ODT Latency for
strength from
change from
registering external
ODTLcwn8=6+ODTLoff
tCK (avg)
ODTLcwn8
RTT_WR to
RTT_WR to
write command
RTT_Nom
RTT_Nom (BL=8)
Minimum ODT high
ODT registered
time
ODTH4 registering ODT high
ODTH4=4
tCK (avg)
low
after ODT assertion
Minimum ODT
registering write with
ODT registered
high time
ODTH4
ODTH4=4
tCK (avg)
ODT high
low
after Write (BL=4)
Minimum ODT
registering write with
high time
ODTH8
ODT register low
ODTH8=6
tCK (avg)
ODT high
after Write (BL=8)
ODTLcnw
tADC(min)=0.3tCK(avg)
RTT change skew
tADC
RTT valid
tCK (avg)
tADC(max)=0.7tCK(avg)
ODTLcwn
Note 1:
tAOF,nom and tADC,nom are 0.5tCK (effectively adding half a clock cycle to ODTLoff, ODTcnw, and ODTLcwn)
z Asynchronous ODT Mode
Asynchronous ODT mode is selected when DRAM runs in DLLon mode, but DLL is temporarily disabled (i.e. frozen)
in precharge power-down (by MR0 bit A12). Based on the power down mode definitions, this is currently Precharge
power down mode if DLL is disabled during precharge power down by MR0 bit A12.
In asynchronous ODT timing mode, internal ODT command is NOT delayed by Additive Latency (AL) relative to the
external ODT command.
In asynchronous ODT mode, the following timing parameters apply: tAONPD min/max, tAOFPD min/max.
Minimum RTT turn-on time (tAONPD min) is the point in time when the device termination circuit leaves high
impedance state and ODT resistance begins to turn on. Maximum RTT turn on time (tAONPD max) is the point in
time when the ODT resistance is fully on.
tAONPDmin and tAONPDmax are measured from ODT being sampled high.
Minimum RTT turn-off time (tAOFPDmin) is the point in time when the devices termination circuit starts to turn off
the ODT resistance. Maximum ODT turn off time (tAOFPDmax) is the point in time when the on-die termination has
reached high impedance. tAOFPDmin and tAOFPDmax are measured from ODT being sample low.
Table 28. ODT timing parameters for Power Down (with DLL frozen) entry and exit
Description
Min
Max
ODT to RTT
turn-on delay
min{ ODTLon * tCK + tAONmin; tAONPDmin }
min{ (WL - 2) * tCK + tAONmin; tAONPDmin }
max{ ODTLon * tCK + tAONmax; tAONPDmax }
max{ (WL - 2) * tCK + tAONmax; tAONPFmax }
ODT to RTT
turn-off delay
min{ ODTLoff * tCK + tAOFmin; tAOFPDmin }
min{ (WL - 2) * tCK + tAOFmin; tAOFPDmin }
max{ ODTLoff * tCK + tAOFmax; tAOFPDmax }
max{ (WL - 2) * tCK + tAOFmax; tAOFPDmax }
tANPD
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z Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry
If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to “0”, there is a
transition period around power down entry, where the DDR3 SDRAM may show either synchronous or
asynchronous ODT behavior.
The transition period is defined by the parameters tANPD and tCPDED(min). tANPD is equal to (WL-1) and is
counted backwards in time from the clock cycle where CKE is first registered low. tCPDED(min) starts with the
clock cycle where CKE is first registered low. The transition period begins with the starting point of tANPD and
terminates at the end point of tCPDED(min). If there is a Refresh command in progress while CKE goes low, then
the transition period ends at the later one of tRFC(min) after the Refresh command and the end point of
tCPDED(min). Please note that the actual starting point at tANPD is excluded from the transition period, and the
actual end point at tCPDED(min) and tRFC(min, respectively, are included in the transition period.
ODT assertion during the transition period may result in an RTT changes as early as the smaller of tAONPDmin and
(ODTLon*tck+tAONmin) and as late as the larger of tAONPDmax and (ODTLon*tCK+tAONmax). ODT de-assertion
during the transition period may result in an RTT change as early as the smaller of tAOFPDmin and
(ODTLoff*tCK+tAOFmin) and as late as the larger of tAOFPDmax and (ODTLoff*tCK+tAOFmax). Note that, if AL
has a large value, the range where RTT is uncertain becomes quite large. The following figure shows the three
different cases: ODT_A, synchronous behavior before tANPD; ODT_B has a state change during the transition
period; ODT_C shows a state change after the transition period.
z Asynchronous to Synchronous ODT Mode transition during Power-Down Exit
If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to “0”, there is also
a transition period around power down exit, where either synchronous or asynchronous response to a change in
ODT must be expected from the DDR3 SDRAM.
This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered
high. tANPD is equal to (WL -1) and is counted (backwards) from the clock cycle where CKE is first registered high.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPDmin and
(ODTLon* tCK+tAONmin) and as late as the larger of tAONPDmax and (ODTLon*tCK+tAONmax). ODT deassertion during the transition period may result in an RTT change as early as the smaller of tAOFPDmin and
(ODTLoff*tCK+tAOFmin) and as late as the larger of tAOFPDmax and (ODToff*tCK+tAOFmax). Note that if AL has
a large value, the range where RTT is uncertain becomes quite large. The following figure shows the three different
cases: ODT_C, asynchronous response before tANPD; ODT_B has a state change of ODT during the transition
period; ODT_A shows a state change of ODT after the transition period with synchronous response.
z Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low periods
If the total time in Precharge Power Down state or Idle state is very short, the transition periods for PD entry and PD
exit may overlap. In this case, the response of the DDR3 SDRAMs RTT to a change in ODT state at the input may
be synchronous or asynchronous from the state of the PD entry transition period to the end of the PD exit transition
period (even if the entry ends later than the exit period).
If the total time in Idle state is very short, the transition periods for PD exit and PD entry may overlap. In this case,
the response of the DDR3 SDRAMs RTT to a change in ODT state at the input may be synchronous or
asynchronous from the state of the PD exit transition period to the end of the PD entry transition period. Note that in
the following figure, it is assumed that there was no Refresh command in progress when Idle state was entered.
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ZQ Calibration Commands
z ZQ Calibration Description
ZQ Calibration command is used to calibrate DRAM Ron and ODT values. DDR3 SDRAM needs longer time to
calibrate output driver and on-die termination circuits at initialization and relatively smaller time to perform periodic
calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command
may be issued at any time by the controller depending on the system environment. ZQCL command triggers the
calibration engine inside the DRAM and once calibration is achieved the calibrated values are transferred from
calibration engine to DRAM IO which gets reflected as updated output driver and on-die termination values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and
the transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a
timing period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for voltage and temperature variations. A
shorter timing window is provided to perform the calibration and transfer of values as defined by timing parameter
tZQCS.
No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper,
or tZQCS. The quiet time on the DRAM channel allows calibration of output driver and on-die termination values.
Once DRAM calibration is achieved, the DRAM should disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self refresh. Upon
self-refresh exit, DDR3/L SDRAM will not perform an IO calibration without an explicit ZQ calibration command. The
earliest possible time for ZQ Calibration command (short or long) after self refresh exit is tXS.
In systems that share the ZQ resistor between devices, the controller must not allow any overlap of tZQoper, tZQinit,
or tZQCS between ranks.
Figure 23. ZQ Calibration Timing
T0
T1
Ta0
Ta1
Ta2
Ta3
Tb0
ZQCL
NOP
NOP
NOP
VALID
VALID
ZQCS
ADDRESS
VALID
VALID
VALID
A10
VALID
VALID
VALID
VALID
VALID
VALID
VALID
CK#
Tb1
Tc0
Tc1
Tc2
CK
COMMAND
CKE
Notes 1
Notes 2
ODT
DQ Bus
Notes 3
Hi-Z
ACTIVITIES
NOP
NOP
NOP
VALID
Notes 1
Notes 2
Notes 3
tZQinit or tZQoper
VALID
VALID
Hi-Z
ACTIVITIES
tZQCS
NOTES:
1. CKE must be continuously registered high during the calibration procedure.
2. On-die termination must be disabled via the ODT signal or MRS during the calibration procedure.
3. All devices connected to the DQ bus should be high impedance during the calibration procedure.
TIME BREAK
Don't Care
z ZQ External Resistor Value, Tolerance, and Capacitive loading
In order to use the ZQ calibration function, a 240 ohm +/- 0.1% tolerance external resistor connected between the
ZQ pin and ground. The single resistor can be used for each SDRAM or one resistor can be shared between two
SDRAMs if the ZQ calibration timings for each SDRAM do not overlap. The total capacitive loading on the ZQ pin
must be limited.
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- Single-ended requirements for differential signals
Each individual component of a differential signal (CK, CK#, DQS, DQS#) has also to comply with certain
requirements for single-ended signals.
CK and CK# have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH(ac) /
VIL(ac)) for ADD/CMD signals) in every half-cycle. DQS, DQS# have to reach VSEHmin / VSELmax (approximately
the ac-levels (VIH(ac) / VIL(ac)) for DQ signals) in every half-cycle proceeding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if
VIH150(ac)/VIL150(ac) is used for ADD/CMD signals, then these ac-levels apply also for the single-ended signals
CK and CK#.
Table 29. Single-ended levels for CK, DQS, CK#, DQS#
Symbol
VSEH
VSEL
Parameter
Min.
Max.
Unit
Note
Single-ended high level for strobes
(VDD / 2) + 0.175
-
V
1~3
Single-ended high level for CK, CK#
(VDD / 2) + 0.175
-
V
1~3
Single-ended low level for strobes
-
(VDD / 2) - 0.175
V
1~3
Single-ended low level for CK, CK#
-
(VDD / 2) - 0.175
V
1~3
NOTE 1: For CK, CK# use VIH/VIL(ac) of ADD/CMD; for strobes (DQS, DQS#) use VIH/VIL(ac) of DQs.
NOTE 2: VIH(ac)/VIL(ac) for DQs is based on VREFDQ; VIH(ac)/VIL(ac) for ADD/CMD is based on VREFCA; if a reduced
ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
NOTE 3: These values are not defined, however the single-ended signals CK, CK#, DQS, DQS# need to be within the
respective limits (VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for overshoot and
undershoot.
- Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each
cross point voltage of differential input signals (CK, CK# and DQS, DQS#) must meet the requirements in the
following table. The differential input cross point voltage Vix is measured from the actual cross point of true and
complete signal to the midlevel between of VDD and VSS.
Table 30. Cross point voltage for differential input signals (CK, DQS)
Symbol
Parameter
Min.
Max.
Unit
Note
VIX(CK)
Differential Input Cross Point Voltage
relative to VDD/2 for CK, CK#
- 150
150
mV
2
- 175
175
mV
1
- 150
150
mV
2
VIX(DQS) Differential Input Cross Point Voltage
relative to VDD/2 for DQS, DQS#
NOTE 1: Extended range for Vix is only allowed for clock and if single-ended clock input signals CK and CK# are monotonic
with a single-ended swing VSEL / VSEH of at least VDD/2 +/-250 mV, and when the differential slew rate of CK CK# is larger than 3 V/ns.
NOTE 2: The relation between Vix Min/Max and VSEL/VSEH should satisfy following.
(VDD/2) + Vix (Min) - VSEL ≧ 25mV
VSEH - ((VDD/2) + Vix (Max)) ≧ 25mV
Rev. 2.5
52
Nov. /2014
EtronTech
EM6GD08EWUC
- Slew Rate Definition for Differential Input Signals
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and measured as shown below.
Table 31. Differential Input Slew Rate Definition
Measured
Description
Defined by
From
To
Differential input slew rate for rising edge
(CK, CK# and DQS, DQS#)
VILdiffmax
VIHdiffmin
[VIHdiffmin-VILdiffmax] / DeltaTRdiff
Differential input slew rate for falling
edge
(CK, CK# and DQS, DQS#)
VIHdiffmin
VILdiffmax
[VIHdiffmin-VILdiffmax] / DeltaTFdiff
NOTE: The differential signal (i.e., CK, CK# and DQS, DQS#) must be linear between these thresholds.
Table 32. Single-ended AC and DC Output Levels
-10/12/15
Unit
VOH(DC)
Symbol
DC output high measurement level (for IV curve linearity)
Parameter
0.8 x VDDQ
V
Note
VOM(DC)
DC output mid measurement level (for IV curve linearity)
0.5 x VDDQ
V
VOL(DC)
DC output low measurement level (for IV curve linearity)
0.2 x VDDQ
V
VOH(AC)
AC output high measurement level (for output SR)
VTT + 0.1 x VDDQ
V
1
VOL(AC)
AC output low measurement level (for output SR)
VTT - 0.1 x VDDQ
V
1
NOTE 1: The swing of ± 0.1 × VDDQ is based on approximately 50% of the static single-ended output high or low swing with
a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2.
Table 33. Differential AC and DC Output Levels
Symbol
Parameter
-10/12/15
Unit
Note
VOHdiff(AC)
AC differential output high measurement level (for output SR)
+ 0.2 x VDDQ
V
1
VOLdiff(AC)
AC differential output low measurement level (for output SR)
- 0.2 x VDDQ
V
1
NOTE 1: The swing of ± 0.2 × VDDQ is based on approximately 50% of the static single-ended output high or low swing with
a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2 at each of the differential outputs.
Rev. 2.5
53
Nov. /2014
EtronTech
EM6GD08EWUC
- Single Ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between VOL(AC) and VOH(AC) for single ended signals as shown in Table.
Table 33. Output Slew Rate Definition (Single-ended)
Description
Measured
Defined by
From
To
Single-ended output slew rate for rising edge
VOL(AC)
VOH(AC)
[VOH(AC) - VOL(AC)] /
DeltaTRse
Single-ended output slew rate for falling
edge
VOH(AC)
VOL(AC)
[VOH(AC) - VOL(AC)] /
DeltaTFse
NOTE: Output slew rate is verified by design and characterization, and may not be subject to production test.
Table 34. Output Slew Rate (Single-ended)
Symbol
Parameter
SRQse
Single-ended Output Slew Rate
-10
-12/15
Min.
Max.
Min.
Max.
2.5
5
2.5
5
Unit
V/ns
Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
- Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and
measured between VOLdiff(AC) and VOHdiff(AC) for differential signals as shown in Table.
Table 35. Output Slew Rate Definition (Differential)
Description
Measured
From
Defined by
To
Differential output slew rate for rising edge
VOLdiff(AC) VOHdiff(AC)
[VOHdiff(AC) - VOLdiff(AC)] /
DeltaTRdiff
Differential output slew rate for falling edge
VOHdiff(AC) VOLdiff(AC)
[VOHdiff(AC) - VOLdiff(AC)] /
DeltaTFdiff
NOTE: Output slew rate is verified by design and characterization, and may not be subject to production test.
Table36. Output Slew Rate (Differential)
Symbol
SRQdiff
Parameter
-10
-12/15
Min.
Max.
Min.
Max.
5
10
5
10
Differential Output Slew Rate
Unit
V/ns
Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
diff: Differential Signals
For Ron = RZQ/7 setting
Rev. 2.5
54
Nov. /2014
EtronTech
EM6GD08EWUC
z Reference Load for AC Timing and Output Slew Rate
The following figure represents the effective reference load of 25 ohms used in defining the relevant AC timing
parameters of the device as well as output slew rate measurements.
It is not intended as a precise representation of any particular system environment or a depiction of the actual load
presented by a production tester. System designers should use IBIS or other simulation tools to correlate the timing
reference load to a system environment. Manufacturers correlate to their production test conditions, generally one
or more coaxial transmission lines terminated at the tester electronics.
Figure 24. Reference Load for AC Timing and Output Slew Rate
VDDQ
DUT
CK, CK#
DQ
DQS
DQS#
25 Ohm
VTT = VDDQ/2
Table 37. AC Overshoot/Undershoot Specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot area.
-10
-12
-15
Unit
0.4
0.4
0.4
V
Maximum peak amplitude allowed for undershoot area.
0.4
0.4
0.4
V
Maximum overshoot area above VDD
0.28
0.33
0.4
V-ns
Maximum undershoot area below VSS
0.28
0.33
0.4
V-ns
Table 38. AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
Parameter
-10
-12
-15
Unit
Maximum peak amplitude allowed for overshoot area.
0.4
0.4
0.4
V
Maximum peak amplitude allowed for undershoot area.
Maximum overshoot area above VDD
0.4
0.11
0.4
0.13
0.4
0.15
V
V-ns
Maximum undershoot area below VSS
0.11
0.13
0.15
V-ns
Rev. 2.5
55
Nov. /2014
EtronTech
EM6GD08EWUC
- Address / Command Setup, Hold and Derating
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet
tIS(base) and tIH(base) and tIH(base) value to the delta tIS and delta tIH derating value respectively.
Example: tIS (total setup time) = tIS(base) + delta tIS.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of Vref(dc) and
the first crossing of VIH(ac)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between
the last crossing of Vref(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the
nominal slew rate line between shaded ‘Vref(dc) to ac region’, use nominal slew rate for derating value. If the actual
signal is later than the nominal slew rate line anywhere between shaded ‘Vref(dc) to ac region’, the slew rate of the
tangent line to the actual signal from the ac level to dc level is used for derating value.
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max
and the first crossing of Vref(dc). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between
the last crossing of VIH(dc)min and the first crossing of Vref(dc). If the actual signal is always later than the nominal
slew rate line between shaded ‘dc to Vref(dc) region’, use nominal slew rate for derating value. If the actual signal is
earlier than the nominal slew rate line anywhere between shaded ‘dc to Vref(dc) region’, the slew rate of a tangent
line to the actual signal from the dc level to Vref(dc) level is used for derating value. For a valid transition the input
signal has to remain above/below VIH/IL(ac) for some time tVAC. Although for slow slew rates the total setup time
might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a
valid input signal is still required to complete the transition and reach VIH/IL(ac).
Table 39. ADD/CMD Setup and Hold Base
Symbol
tIS(base) AC175
Reference
VIH/L(ac)
-10
-12
-15
Unit
-
45
65
tIS(base) AC150
VIH/L(ac)
ps
-
170
190
ps
tIS(base) AC135
VIH/L(ac)
65
-
-
ps
tIH(base) DC100
VIH/L(dc)
100
120
140
ps
NOTE 1: (ac/dc referenced for 1V/ns Address/Command slew rate and 2 V/ns differential CK-CK# slew rate)
NOTE 2: The tIS(base) AC150 (AC135) specifications are adjusted from the tIS(base) specification by adding an additional
100ps of derating to accommodate for the lower alternate threshold of 150 mV (135mV) and another 25 ps to account for the
earlier reference point [(175 mv - 150 mV) / 1 V/ns].
Table 40. Derating values DDR3-1333/1600 tIS/tIH – (AC175)
4.0 V/ns
CMD
/ADD
Slew
Rate
V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Rev. 2.5
△tIS, △tIH derating in [ps] AC/DC based `
Alternate AC175 Threshold -> VIH(ac)=VREF(dc)+175mV, VIL(ac)=VREF(dc)-175mV
CK, CK# Differential Slew Rate
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
88
59
0
-2
-6
-11
-17
-35
-62
50
34
0
-4
-10
-16
-26
-40
-60
88
59
0
-2
-6
-11
-17
-35
-62
50
34
0
-4
-10
-16
-26
-40
-60
88
59
0
-2
-6
-11
-17
-35
-62
50
34
0
-4
-10
-16
-26
-40
-60
96
67
8
6
2
-3
-9
-27
-54
58
42
8
4
-2
-8
-18
-32
-52
104
75
16
14
10
5
-1
-19
-46
66
50
16
12
6
0
-10
-24
-44
112
83
24
22
18
13
7
-11
-38
74
58
24
20
14
8
-2
-16
-36
120
91
32
30
26
21
15
-2
-30
84
68
34
30
24
18
8
-6
-26
128
99
40
38
34
29
23
5
-22
100
84
50
46
40
34
24
10
-10
56
Nov. /2014
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EM6GD08EWUC
Table 41. Derating values DDR3-1333/1600 tIS/tIH – (AC150)
4.0 V/ns
CMD
/ADD
Slew
Rate
V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
△tIS, △tIH derating in [ps] AC/DC based
Alternate AC150 Threshold -> VIH(ac)=VREF(dc)+150mV, VIL(ac)=VREF(dc)-150mV
CK, CK# Differential Slew Rate
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
75
50
0
0
0
0
-1
-10
-25
50
34
0
-4
-10
-16
-26
-40
-60
75
50
0
0
0
0
-1
-10
-25
50
34
0
-4
-10
-16
-26
-40
-60
75
50
0
0
0
0
-1
-10
-25
50
34
0
-4
-10
-16
-26
-40
-60
83
58
8
8
8
8
7
-2
-17
58
42
8
4
-2
-8
-18
-32
-52
91
66
16
16
16
16
15
6
-9
66
50
16
12
6
0
-10
-24
-44
99
74
24
24
24
24
23
14
-1
74
58
24
20
14
8
-2
-16
-36
107
82
32
32
32
32
31
22
7
84
68
34
30
24
18
8
-6
-26
115
90
40
40
40
40
39
30
15
100
84
50
46
40
34
24
10
-10
Table 42. Derating values DDR3-1866 tIS/tIH – (AC135)
4.0 V/ns
CMD
/ADD
Slew
Rate
V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Rev. 2.5
△tIS, △tIH derating in [ps] AC/DC based
Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV
CK, CK# Differential Slew Rate
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
△tIS
△tIH
68
45
0
2
3
6
9
5
-3
50
34
0
-4
-10
-16
-26
-40
-60
68
45
0
2
3
6
9
5
-3
50
34
0
-4
-10
-16
-26
-40
-60
68
45
0
2
3
6
9
5
-3
50
34
0
-4
-10
-16
-26
-40
-60
76
53
8
10
11
14
17
13
6
58
42
8
4
-2
-8
-18
-32
-52
84
61
16
18
19
22
25
21
14
66
50
16
12
6
0
-10
-24
-44
92
69
24
26
27
30
33
29
22
74
58
24
20
14
8
-2
-16
-36
100
77
32
34
35
38
41
37
30
84
68
34
30
24
18
8
-6
-26
108
85
40
42
43
46
49
45
38
100
84
50
46
40
34
24
10
-10
57
Nov. /2014
EtronTech
EM6GD08EWUC
- Data Setup, Hold, and Slew Rate De-rating
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet
tDS(base) and tDH(base) value to the ΔtDS and ΔtDH derating value respectively.
Example: tDS (total setup time) = tDS(base) + ΔtDS.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of Vref(dc)
and the first crossing of VIH(ac)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate
between the last crossing of Vref(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than
the nominal slew rate line between shaded ‘Vref(dc) to ac region’, use nominal slew rate for derating value. If the
actual signal is later than the nominal slew rate line anywhere between shaded ‘Vref(dc) to ac region’, the slew rate
of the tangent line to the actual signal from the ac level to dc level is used for derating value. Hold (tDH) nominal
slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max and the first
crossing of Vref(dc). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last
crossing of VIH(dc)min and the first crossing of Vref(dc). If the actual signal is always later than the nominal slew
rate line between shaded ‘dc level to Vref(dc) region’, use nominal slew rate for derating value. If the actual signal is
earlier than the nominal slew rate line anywhere between shaded ‘dc to Vref(dc) region’, the slew rate of a tangent
line to the actual signal from the dc level to Vref(dc) level is used for derating value.
For a valid transition the input signal has to remain above/below VIH/IL(ac) for some time tVAC.
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached
VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and
reach VIH/IL(ac).
For slew rates in between the values listed in the following tables, the derating values may be obtained by linear
interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
Table 43. Data Setup and Hold Base
Symbol
-10
-12
-15
tDS(base) AC150
Reference
VIH/L(ac)
Unit Note
-
10
30
ps
2
tDS(base) AC135
VIH/L(ac)
68
-
-
ps
1
tDH(base) DC100
VIH/L(dc)
70
-
-
ps
1
tDH(base) DC100
VIH/L(dc)
-
45
65
ps
2
NOTE 1: (ac/dc referenced for 2V/ns Address/Command slew rate and 4 V/ns differential CK-CK# slew rate)
NOTE 2: (ac/dc referenced for 1V/ns Address/Command slew rate and 2 V/ns differential CK-CK# slew rate)
Table 44. Derating values for DDR3-1333/1600 tDS/tDH – (AC150)
△tDS, △tDH derating in [ps] AC/DC based
Alternate AC150 Threshold -> VIH(ac)=VREF(dc)+150mV, VIL(ac)=VREF(dc)-150mV
Alternate DC100 Threshold -> VIH(dc)=VREF(dc)+100mV, VIL(dc)=VREF(dc)-100mV
DQS, DQS# Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
DQ
Slew
Rate
V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Rev. 2.5
1.2 V/ns
1.0 V/ns
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
△tDS
△tDH
75
50
0
-
50
34
0
-
75
50
0
0
-
50
34
0
-4
-
75
50
0
0
0
-
50
34
0
-4
-10
-
58
8
8
8
8
-
42
8
4
-2
-8
-
16
16
16
16
15
-
16
12
6
0
-10
-
24
24
24
23
14
-
20
14
8
-2
-16
-
32
32
31
22
7
24
18
8
-6
-26
40
39
30
15
34
24
10
-10
58
Nov. /2014
EtronTech
EM6GD08EWUC
Table 45. Derating values for DDR3-1866 tDS/tDH – (AC135)
8.0
V/ns
DQ
Slew
Rate
V/ns
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Rev. 2.5
△tDS, △tDH derating in [ps] AC/DC based
Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV
Alternate DC100 Threshold -> VIH(dc)=VREF(dc)+100mV, VIL(dc)=VREF(dc)-100mV
DQS, DQS# Differential Slew Rate
7.0
6.0
5.0
4.0
3.0
2.0
1.8
1.6
1.4
V/ns
V/ns
V/ns
V/ns
V/ns
V/ns
V/ns
V/ns
V/ns
1.2
V/ns
1.0
V/ns
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
34
29
23
-
25
21
17
-
34
29
23
14
-
25
21
17
10
-
34
29
23
14
0
-
25
21
17
10
0
-
29
23
14
0
-23
-
21
17
10
0
-17
-
23
14
0
-23
-68
-
17
10
0
-17
-50
-
14
0
-23
-68
-66
-
10
0
-17
-50
-54
-
0
-23
-68
-66
-64
-
0
-17
-50
-54
-60
-
-15
-60
-58
-56
-53
-
-9
-42
-46
-52
-59
-
-52
-50
-48
-45
-43
-
-34
-38
-44
-51
-61
-
-42
-40
-37
-35
-39
-
-30
-36
-43
-53
-66
-
-32
-29
-27
-31
-38
-26
-33
-43
-56
-76
-21
-19
-23
-30
-17
-27
-40
-60
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Nov. /2014
EtronTech
EM6GD08EWUC
Timing Waveforms
Figure 25. MPR Readout of predefined pattern,BL8 fixed burst order, single readout
CK#
T0
Ta
Tb0
Tb1
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
PREA
MRS
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Tc7
Tc8
Tc9
tMPRR
COMMAND
tRP
tMOD
Td
tMOD
MRS
MRS
MRS
VALID
Notes 1
BA
3
VALID
3
A[1:0]
0
0
VALID
Notes 2
A[2]
1
0
0
Notes 2
00
VALID
00
0
VALID
0
A[11]
0
VALID
0
A12, BC#
0
VALID
0
A[14:13]
0
VALID
A[9:3]
A10, AP
1
0
RL
DQS, DQS#
DQ
NOTES:
1. RD with BL8 either by MRS or OTF.
2. Memory Controller must drive 0 on A[2:0].
TIME BREAK
Don't Care
Figure 26. MPR Readout of predefined pattern,BL8 fixed burst order, back to back radout
T0
Ta
Tb
Tc0
Tc1
PREA
MRS
READ
READ
NOP
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
NOP
NOP
NOP
NOP
NOP
Tc8
Tc9
Tc10
Td
CK#
CK
tMPRR
COMMAND
tRP
tMOD
Notes 1
tCCD
NOP
NOP
NOP
tMOD
MRS
BA
3
VALID
VALID
3
A[1:0]
0
0
0
VALID
Notes 2
A[2]
1
Notes 2
0
0
0
Notes 2
Notes 2
A[9:3]
00
VALID
VALID
00
0
VALID
VALID
0
A[11]
0
VALID
VALID
0
A12, BC#
0
VALID
VALID
0
A10, AP
1
Notes 1
Notes 1
A[14:13]
0
VALID
Notes 1
VALID
VALID
0
RL
DQS, DQS#
RL
DQ
NOTES:
1. RD with BL8 either by MRS or OTF.
2. Memory Controller must drive 0 on A[2:0].
Rev. 2.5
TIME BREAK
60
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Nov. /2014
EtronTech
EM6GD08EWUC
Figure 27. MPR Readout of predefined pattern,BC4 lower nibble then upper nibble
CK#
T0
Ta
Tb
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
PREA
MRS
READ
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Tc8
Tc9
tMPRR
COMMAND
tRP
tMOD
tCCD
VALID
VALID
3
A[1:0]
0
0
0
VALID
Notes 2
0
1
0
VALID
VALID
00
0
VALID
VALID
0
A[11]
0
VALID
VALID
0
A12, BC#
0
VALID
VALID
0
1
Notes 1
Notes 1
0
A[14:13]
VALID
VALID
Notes 4
00
A10, AP
NOP
Notes 2
Notes 3
A[9:3]
NOP
Notes 1
Notes 1
3
1
Td
tMOD
MRS
BA
A[2]
Tc10
VALID
0
RL
DQS, DQS#
RL
DQ
NOTES:
1. RD with BC4 either by MRS or OTF.
2. Memory Controller must drive 0 on A[1:0].
3. A[2]=0 selects lower 4 nibble bits 0....3.
4. A[2]=1 selects upper 4 nibble bits 4....7.
TIME BREAK
Don't Care
Figure 28. MPR Readout of predefined pattern,BC4 upper nibble then lower nibble
CK#
T0
Ta
Tb
Tc0
Tc1
PREA
MRS
READ
READ
NOP
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
NOP
NOP
NOP
NOP
NOP
CK
COMMAND
Tc8
tMPRR
tRP
tMOD
Notes 1
tCCD
NOP
VALID
VALID
3
A[1:0]
0
0
0
VALID
A[2]
1
1
0
VALID
00
0
VALID
VALID
0
A[11]
0
VALID
VALID
0
A12, BC#
0
VALID
VALID
0
Notes 1
Notes 1
0
VALID
VALID
0
VALID
A[14:13]
NOP
Notes 3
00
1
NOP
Notes 2
Notes 4
A[9:3]
Td
Notes 1
3
Notes 2
Tc10
tMOD
MRS
BA
A10, AP
Tc9
VALID
0
RL
DQS, DQS#
RL
DQ
NOTES:
1. RD with BC4 either by MRS or OTF.
2. Memory Controller must drive 0 on A[1:0].
3. A[2]=0 selects lower 4 nibble bits 0....3.
4. A[2]=1 selects upper 4 nibble bits 4....7.
Rev. 2.5
TIME BREAK
61
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Nov. /2014
EtronTech
EM6GD08EWUC
Figure 29. READ (BL8) to READ (BL8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
NOP
NOP
NOP
T11
T12
T13
T14
NOP
NOP
NOP
CK#
CK
Notes 3
COMMAND
ADDRESS
NOP
tCCD
Notes 4
Bank,
Col n
Bank,
Col b
tRPRE
tRPST
DQS, DQS#
Notes 2
Dout
n
DQ
Dout
n+1
Dout
n+2
RL = 5
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
Dout
b
Dout
b+1
Dout
b+2
Dout
b+3
Dout
b+4
Dout
b+5
Dout
b+6
Dout
b+7
RL = 5
NOTES:
1. BL8, RL = 5 (CL = 5, AL = 0)
2. DOUT n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T4.
TRANSITIONING DATA
Don't Care
Figure 30. Nonconsecutive READ (BL8) to READ (BL8)
T0
T1
T2
READ
NOP
NOP
T3
T4
T5
T6
T7
T8
T9
NOP
NOP
READ
NOP
NOP
NOP
NOP
T10
T11
T12
T13
NOP
NOP
T14
CK#
CK
Notes 3
COMMAND
ADDRESS
NOP
NOP
NOP
tCCD = 5
Notes 4
Bank,
Col n
Bank,
Col b
tRPRE
Notes 5
tRPST
DQS, DQS#
Notes 2
DO
n
DQ
DO
b
RL = 5
RL = 5
NOTES:
1. BL8, RL = 5 (CL = 5, AL = 0), tCCD=5
2. DOUT n (or b) = data-out from column n (or column b)
3. NOP commands are shown for ease of illustration; other commands may be valid at these times
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T4
5. DQS-DQS# is held logic low at T9
TRANSITIONING DATA
Don't Care
Figure 31. READ (BL4) to READ (BL4)
T0
T1
T2
READ
NOP
NOP
T3
T4
NOP
READ
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK#
CK
Notes 3
COMMAND
ADDRESS
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
Notes 4
Bank,
Col n
Bank,
Col b
tRPST
tRPRE
tRPST
tRPRE
DQS, DQS#
Notes 2
Dout
n
DQ
Dout
n+1
Dout
n+2
Dout
n+3
Dout
b
Dout
b+1
Dout
b+2
Dout
b+3
RL = 5
RL = 5
NOTES:
1. BC4, RL = 5 (CL = 5, AL = 0)
2. DOUT n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by either MR0[A1:0 = 10] or MR0[A1:0 = 01] and A12 = 0 during READ commands at T0 and T4.
Rev. 2.5
62
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 32. READ (BL8) to WRITE (BL8)
T0
T1
T2
READ
NOP
NOP
T3
T4
T5
T6
T7
T8
T9
NOP
NOP
READ
NOP
NOP
NOP
NOP
T10
T11
T12
T13
NOP
NOP
T14
CK#
CK
Notes 3
COMMAND
NOP
NOP
NOP
tCCD = 5
Notes 4
Bank,
Col n
ADDRESS
Bank,
Col b
tRPRE
Notes 5
tRPST
DQS, DQS#
Notes 2
DO
n
DQ
DO
b
RL = 5
RL = 5
NOTES:
1. BL8, RL = 5 (CL = 5, AL = 0), tCCD=5
2. DOUT n (or b) = data-out from column n (or column b)
3. NOP commands are shown for ease of illustration; other commands may be valid at these times
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T4
5. DQS-DQS# is held logic low at T9
TRANSITIONING DATA
Don't Care
Figure 33. READ (BL4) to WRITE (BL4) OTF
CK#
T0
T1
T2
T3
T4
T5
READ
NOP
NOP
NOP
WRITE
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
T15
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tWR
4 clocks
READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL
tWTR
Notes 4
ADDRESS
Bank,
Col n
Bank,
Col b
tWPST
tWPRE
tRPST
tRPRE
DQS, DQS#
Notes 2
DQ
Dout
n
Dout
n+1
RL = 5
Dout
n+2
Dout
n+3
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
NOTES:
1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. DOUT n = data-out from column, DIN b = data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T0 and WRITE command at T4.
TRANSITIONING DATA
Don't Care
Figure 34. READ (BL8) to READ (BL4) OTF
CK#
T0
T1
READ
NOP
T2
T3
T4
NOP
NOP
READ
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
Notes 4
ADDRESS
Bank,
Col n
Bank,
Col b
tRPST
tRPRE
DQS, DQS#
Notes 2
DQ
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
Dout
b
Dout
b+1
Dout
b+2
Dout
b+3
RL = 5
RL = 5
NOTES:
1. RL = 5 (CL = 5, AL = 0)
2. DOUT n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T4.
Rev. 2.5
63
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 35. READ (BL4) to READ (BL8) OTF
T0
T1
READ
NOP
T2
T3
T4
NOP
NOP
READ
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK#
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
Notes 4
Bank,
Col n
ADDRESS
Bank,
Col b
tRPST
tRPRE
tRPST
tRPRE
DQS, DQS#
Notes 2
Dout
n
DQ
Dout
n+1
Dout
n+2
Dout
n+3
Dout
b
Dout
b+1
Dout
b+2
Dout
b+3
Dout
b+4
Dout
b+5
Dout
b+6
Dout
b+7
RL = 5
RL = 5
NOTES:
1. RL = 5 (CL = 5, AL = 0)
2. DOUT n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during READ command at T4.
TRANSITIONING DATA
Don't Care
Figure 36. READ (BC4) to WRITE (BL8) OTF
CK#
T0
T1
T2
T3
T4
READ
NOP
NOP
NOP
WRITE
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
T15
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tWR
4 clocks
READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL
tWTR
Notes 4
Bank,
Col n
ADDRESS
Bank,
Col b
tWPST
tWPRE
tRPST
tRPRE
DQS, DQS#
Notes 2
DQ
Dout
n
Dout
n+1
Dout
n+2
RL = 5
Dout
n+3
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
NOTES:
1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. DOUT n = data-out from column, DIN b = data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during READ command at T0 and WRITE command at T4.
TRANSITIONING DATA
Don't Care
Figure 37. READ (BL8) to WRITE (BL4) OTF
CK#
T0
T1
T2
T3
READ
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
T15
NOP
NOP
CK
Notes 3
COMMAND
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
tWR
READ to WRITE Command Delay = RL + tCCD + 2tCK - WL
4 clocks
Notes 4
Bank,
Col n
ADDRESS
tWTR
Bank,
Col b
tRPST
tRPRE
tWPST
tWPRE
DQS, DQS#
Notes 2
DQ
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
RL = 5
Dout
n+5
Dout
n+6
Dout
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
NOTES:
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL= 5, AL = 0)
2. DOUT n = data-out from column, DIN b = data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during READ command at T0.
BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T6.
Rev. 2.5
Dout
n+4
64
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 38. READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5
CK#
T0
T1
T2
NOP
READ
NOP
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
T15
NOP
NOP
CK
COMMAND
NOP
NOP
PRE
NOP
NOP
NOP
NOP
ACT
NOP
tRP
tRTP
RL = AL + CL
Bank a,
Col n
ADDRESS
DQS, DQS#
Bank a,
(or all)
Bank a,
Row b
BL4 Operation:
DQ
DQS, DQS#
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Operation:
DQ
DO
n+4
DO
n+5
DO
n+6
DO
n+7
NOTES:
1. RL = 5 (CL = 5, AL = 0)
2. DOUT n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. The example assumes tRAS.MIN is satisfied at Precharge command time (T5) and that tRC.MIN is satisfied at the next Active command time (T10).
TRANSITIONING DATA
Don't Care
Figure 39. READ to PRECHARGE, RL = 8, AL = CL-2, CL = 5, tRTP = 6, tRP = 5
CK#
T0
T1
T2
T3
NOP
READ
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
NOP
ACT
CK
COMMAND
AL = CL - 2 = 3
NOP
NOP
NOP
NOP
NOP
NOP
PRE
NOP
NOP
tRTP
NOP
tRP
CL = 5
Bank a,
Col n
ADDRESS
DQS, DQS#
Bank a,
(or all)
BL4 Operation:
DQ
DQS, DQS#
Bank a,
Row b
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Operation:
DQ
NOTES:
1. RL = 8 (CL = 5, AL = CL - 2)
2. DOUT n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. The example assumes tRAS.MIN is satisfied at Precharge command time (T10) and that tRC.MIN is satisfied at the next Active command time (T15).
Rev. 2.5
65
DO
n+4
DO
n+5
DO
n+6
DO
n+7
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 40. Write Timing Definition and parameters
CK#
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WL = AL + CWL
Notes 4
ADDRESS
Bank
Col n
tDQSS(min)
tWPRE(min)
tDQSS tDSH
tDSH
tDSH
tDSH tWPST(min)
DQS, DQS#
tDQSH(min) tDQSL
tDQSL
tDQSH
Din
n
DQ
tDQSH
tDQSH
tDQSL
tDSS
tDSS
Notes 2
tDQSL
tDSS
Din
n+2
Din
n+3
tDQSH
tDSS
Din
n+4
Din
n+6
tDQSL(min)
tDSS
Din
n+7
DM
tDQSS(nominal)
tDSH
tWPRE(min)
tDSH
tDSH
tDSH
tWPST(min)
DQS, DQS#
tDQSH(min) tDQSL
tDQSH
DQ
tDQSL
tDQSH
tDQSL
tDSS
tDSS
Notes 2
Din
n
tDQSH
tDSS
Din
n+2
tDQSL
Din
n+4
Din
n+3
tDQSH tDQSL(min)
tDSS
tDSS
Din
n+6
Din
n+7
DM
tDQSS
tDQSS(max)
tDSH
tWPRE(min)
tDSH
tDSH
tDSH
tWPST(min)
DQS, DQS#
tDQSH(min) tDQSL
tDQSH
tDSS
Notes 2
DQ
tDQSL
tDQSH
tDSS
Din
n
tDQSL
tDQSH
tDSS
Din
n+2
Din
n+3
tDQSH tDQSL(min)
tDQSL
tDSS
Din
n+4
tDSS
Din
n+6
Din
n+7
DM
NOTES:
1. BL8, WL = 5 (AL = 0, CWL = 5)
2. DIN n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.
5. tDQSS must be met at each rising clock edge.
TRANSITIONING DATA
Rev. 2.5
66
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 41. WRITE Burst Operation WL = 5 (AL = 0, CWL = 5, BL8)
CK#
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WL = AL + CWL
Notes 4
ADDRESS
Bank,
Col n
tWPST
tWPRE
DQS, DQS#
Notes 2
DQ
Din
n
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
NOTES:
1. BL8, WL = 5; AL = 0, CWL = 5.
2. DIN n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.
TRANSITIONING DATA
Don't Care
Figure 42. WRITE Burst Operation WL = 9 (AL = CL-1, CWL = 5, BL8)
CK#
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Notes 4
ADDRESS
Bank,
Col n
tWPRE
DQS, DQS#
Notes 2
Din
n
DQ
AL = 4
CWL = 5
Din
n+1
Din
n+2
Din
n+3
WL = AL + CWL
NOTES:
1. BL8, WL = 9; AL = (CL - 1), CL = 5, CWL = 5.
2. DIN n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.
TRANSITIONING DATA
Rev. 2.5
67
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 43. WRITE(BC4) to READ (BC4) operation
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
CK#
T4
T5
T6
T7
T8
T9
Tn
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
READ
Notes 5
tWTR
Notes 4
Bank,
Col n
ADDRESS
tWPST
tWPRE
DQS, DQS#
Notes 2
Din
n
DQ
WL = 5
Din
n+1
Din
n+2
Din
n+3
RL = 5
NOTES:
1. BC4, WL = 5, RL = 5.
2. DIN n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0 and READ command at Tn.
5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the last write data shown at T7.
TRANSITIONING DATA
TIME BREAK
Don't Care
,
Figure 44. WRITE(BC4) to Precharge Operation
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
CK#
T4
T5
T6
T7
T8
T9
Tn
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
tWR
PRE
Notes 5
Notes 4
Bank,
Col n
ADDRESS
tWPST
tWPRE
DQS, DQS#
Notes 2
Din
n
DQ
WL = 5
Din
n+1
Din
n+2
Din
n+3
NOTES:
1. BC4, WL = 5, RL = 5.
2. DIN n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0.
5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.
tWR specifies the last burst write cycle until the precharge command can be issued to the same bank .
TRANSITIONING DATA
TIME BREAK
Don't Care
Figure 45. WRITE(BC4) OTF to Precharge operation
CK#
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
Ta0
Ta1
PRE
NOP
Ta2
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tWR
4 Clocks
NOP
Notes 5
Notes 4
ADDRESS
Bank
Col n
VALID
tWPST
tWPRE
DQS, DQS#
Notes 2
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
WL = 5
NOTES:
1. BC4 OTF, WL = 5 (CWL = 5, AL = 0)
2. DIN n (or b) = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 OTF setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.
5. The write recovery time (tWR) starts at the rising clock edge T9 (4 clocks from T5).
Rev. 2.5
68
TIME BREAK
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 46. WRITE(BC8) to WRITE(BC8)
CK#
T0
T1
T2
WRITE
NOP
NOP
T3
T4
NOP
WRITE
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
NOP
NOP
tWR
tWTR
4 Clocks
Notes 4
ADDRESS
Bank
Col n
Bank
Col b
tWPST
tWPRE
DQS, DQS#
Notes 2
Din
n
DQ
WL = 5
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
NOTES:
1. BL8, WL = 5 (CWL = 5, AL = 0)
2. DIN n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0 and T4.
5. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from the first rising clock edge after the last write data shown at T13.
TRANSITIONING DATA
Don't Care
Figure 47. WRITE(BC4) to WRITE(BC4) OTF
T0
T1
T2
WRITE
NOP
NOP
T3
T4
NOP
WRITE
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK#
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
Notes 4
ADDRESS
NOP
Bank
Col n
NOP
tWR
tWTR
4 Clocks
Bank
Col b
tWPRE
tWPST
tWPRE
tWPST
DQS, DQS#
Notes 2
Din
n
DQ
WL = 5
Din
n+1
Din
n+2
Din
n+3
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
NOTES:
1. BC4, WL = 5 (CWL = 5, AL = 0)
2. DIN n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0 and T4.
5. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from the first rising clock edge at T13 (4 clocks from T9).
TRANSITIONING DATA
Don't Care
Figure 48. WRITE(BC8) to READ(BC4,BC8) OTF
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
T10
T11
T12
T13
T14
NOP
READ
NOP
CK#
CK
Notes 3
COMMAND
NOP
NOP
tWTR
Notes 4
ADDRESS
Bank
Col n
Bank
Col b
tWPST
tWPRE
DQS, DQS#
Notes 2
RL = 5
DQ
WL = 5
Din
n
Din
n+1
Din
n+2
Din
n+3
Din
n+4
NOTES:
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. DIN n = data-in from column n; DOUT b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0[A1:0] and A12 status at T13.
Rev. 2.5
69
Din
n+5
Din
n+6
Din
n+7
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 49. WRITE(BC4) to READ(BC4,BC8) OTF
CK#
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
READ
NOP
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tWTR
4 Clocks
Notes 4
ADDRESS
Bank
Col n
Bank
Col b
tWPST
tWPRE
DQS, DQS#
Notes 2
RL = 5
Din
n
DQ
WL = 5
Din
n+1
Din
n+2
Din
n+3
NOTES:
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL =5, AL = 0)
2. DIN n = data-in from column n; DOUT b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.
READ command at T13 can be either BC4 or BL8 depending on A12 status at T13.
TRANSITIONING DATA
Don't Care
Figure 50. WRITE(BC4) to READ(BC4)
CK#
T0
T1
T2
T3
WRITE
NOP
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
READ
NOP
tWTR
Notes 4
ADDRESS
Bank
Col n
Bank
Col b
tWPST
tWPRE
DQS, DQS#
Notes 2
RL = 5
DQ
Din
n
WL = 5
Din
n+1
Din
n+2
Din
n+3
NOTES:
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL =5, AL = 0)
2. DIN n = data-in from column n; DOUT b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 10].
TRANSITIONING DATA
Don't Care
Figure 51. WRITE(BC8) to WRITE(BC4) OTF
CK#
T0
T1
WRITE
NOP
T2
T3
T4
NOP
NOP
WRITE
T5
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
NOP
tWR
tWTR
4 Clocks
Notes 4
ADDRESS
Bank
Col n
Bank
Col b
tWPST
tWPRE
DQS, DQS#
Notes 2
DQ
WL = 5
Din
n
Din
n+1
Din
n+2
Din
n+3
Din
n+5
Din
n+6
Din
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
NOTES:
1. WL = 5 (CWL = 5, AL = 0)
2. DIN n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.
BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T4.
Rev. 2.5
Din
n+4
70
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 52. WRITE(BC4) to WRITE(BC8) OTF
CK#
T0
T1
T2
WRITE
NOP
NOP
T3
T4
T5
NOP
WRITE
T6
T7
T8
T9
T10
T11
T12
T13
NOP
NOP
T14
CK
Notes 3
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
tCCD
NOP
NOP
tWR
tWTR
4 Clocks
Notes 4
ADDRESS
Bank
Col n
Bank
Col b
tWPRE
tWPST
tWPRE
tWPST
DQS, DQS#
Notes 2
Din
n
DQ
WL = 5
Din
n+1
Din
n+2
Din
n+3
Din
b
Din
b+1
Din
b+2
Din
b+4
Din
b+3
Din
b+5
Din
b+6
Din
b+7
WL = 5
NOTES:
1. WL = 5 (CWL = 5, AL = 0)
2. DIN n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.
BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during WRITE command at T4.
TRANSITIONING DATA
Don't Care
Figure 53. Refresh Command Timing
CK#
T0
T1
REF
NOP
Ta0
Ta1
REF
NOP
Tb0
Tb1
Tb2
Tb3
VALID
VALID
VALID
VALID
Tc0
Tc1
Tc2
Tc3
VALID
VALID
CK
COMMAND
NOP
NOP
VALID
REF
VALID
tRFC (min)
tRFC
tREFI (max. 9 * tREFI)
DRAM must be idle
DRAM must be idle
NOTES:
1. Only NOP/DES commands allowed after Refresh command registered until tRFC(min) expires.
2. Time interval between two Refresh commands may be extended to a maximum of 9 x tREFI.
TIME BREAK
TRANSITIONING DATA
Don't Care
Figure 54. Self-Refresh Entry/Exit Timing
T0
T1
T2
Ta0
Tb0
Tc0
Tc1
Td0
Teo
Tf0
CK#
CK
tCKSRE
tIS
tCKSRX
tCPDED
CKE
VALID
VALID
tCKESR
tIS
VALID
ODT
ODTL
Notes 1
COMMAND
NOP
SRE
SRX
NOP
NOP
Notes 2
Notes 3
VALID
VALID
VALID
VALID
tXS
ADDR
tRP
tXSDLL
Exit Self
Refresh
Enter Self
Refresh
NOTES:
1. Only NOP or DES command.
2. Valid commands not requiring a locked DLL.
3. Valid commands requiring a locked DLL.
Rev. 2.5
TIME BREAK
71
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 55. Active Power-Down Entry and Exit Timing Diagram
T0
T1
T2
Ta0
Ta1
Tb0
Tb1
Tc0
CK#
CK
VALID
COMMAND
NOP
NOP
NOP
NOP
VALID
VALID
VALID
tPD
tIS
tIH
CKE
tCKE
tIS
tIH
ADDRESS
NOP
VALID
VALID
tXP
tCPDED
Enter
Power-Down
Mode
Exit
Power-Down
Mode
NOTE:
VALID command at T0 is ACT, NOP, DES or PRE with still one bank remaining
open after completion of the precharge command.
TIME BREAK
Don't Care
Figure 56. Power-Down Entry after Read and Read with Auto Precharge
CK#
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
RD or
RDA
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Ta8
Tb0
Tb1
NOP
NOP
VALID
CK
COMMAND
tIS
tCPDED
CKE
ADDRESS
VALID
VALID
VALID
tPD
RL = AL + CL
DQS, DQS#
DQ BL8
DQ BC4
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
tRDPDEN
Power - Down
Entry
TIME BREAK
Rev. 2.5
72
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 57. Power-Down Entry after Write with Auto Precharge
CK#
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb1
Tb2
Tc0
Tc1
NOP
NOP
VALID
CK
COMMAND
NOP
tCPDED
tIS
CKE
ADDRESS
VALID
Bank,
Col n
VALID
WR
WL = AL + CWL
Notes 1
tPD
A10
DQS, DQS#
DQ BL8
DQ BC4
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
Start Internal
Precharge
tWRAPDEN
Power - Down
Entry
NOTES:
1. WR is programmed through MR0.
TRANSITIONING DATA
TIME BREAK
Don't Care
Figure 58. Power-Down Entry after Write
CK#
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb1
Tb2
Tc0
Tc1
NOP
NOP
VALID
CK
COMMAND
NOP
tIS
tCPDED
CKE
ADDRESS
VALID
Bank,
Col n
VALID
tWR
WL = AL + CWL
tPD
A10
DQS, DQS#
DQ BL8
DQ BC4
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
tWRPDEN
Power - Down
Entry
TIME BREAK
Rev. 2.5
73
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 59. Precharge Power-Down (Fast Exit Mode) Entry and Exit
T0
T1
T2
Ta0
Ta1
Tb0
Tb1
Tc0
CK#
CK
COMMAND
VALID
NOP
NOP
NOP
NOP
NOP
VALID
VALID
VALID
tCPDED
tIS
tIH
CKE
tCKE
tIS
tPD
Enter
Power-Down
Mode
tXP
Exit
Power-Down
Mode
TIME BREAK
Don't Care
Figure 60. Precharge Power-Down (Slow Exit Mode) Entry and Exit
T0
T1
T2
Ta0
VALID
NOP
NOP
Ta1
Tb0
Tb1
Tc0
Td0
NOP
NOP
NOP
VALID
VALID
VALID
VALID
VALID
CK#
CK
COMMAND
tIS
tCPDED
tXPDLL
tIH
CKE
tIS
tPD
Enter
Power-Down
Mode
Rev. 2.5
Exit
Power-Down
Mode
74
tCKE
tXP
TIME BREAK
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 61. Refresh Command to Power-Down Entry
T0
T1
T2
T3
Ta0
Ta1
NOP
VALID
CK#
CK
COMMAND
VALID
REF
ADDRESS
VALID
VALID
NOP
NOP
VALID
tCPDED
tIS
tPD
VALID
CKE
tREFPDEN
TIME BREAK
Figure 62. Active Command to Power-Down Entry
T0
T1
T2
T3
CK#
Don't Care
Ta0
Ta1
NOP
VALID
CK
COMMAND
VALID
ACTIVE
ADDRESS
VALID
VALID
NOP
NOP
VALID
tIS
tCPDED
tPD
VALID
CKE
tACTPDEN
TIME BREAK
Rev. 2.5
75
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 63. Precharge, Precharge all command to Power-Down Entry
T0
T1
T2
T3
Ta0
Ta1
CK#
CK
COMMAND
VALID
PRE or
PREA
ADDRESS
VALID
VALID
NOP
NOP
NOP
VALID
VALID
tCPDED
tIS
tPD
CKE
VALID
tPREPDEN
TIME BREAK
Figure 64. MRS Command to Power-Down Entry
T0
T1
Ta0
Ta1
Tb0
Don't Care
Tb1
CK#
CK
COMMAND
MRS
ADDRESS
VALID
NOP
NOP
NOP
VALID
VALID
tIS
tCPDED
tPD
CKE
VALID
tMRSPDEN
TIME BREAK
Rev. 2.5
76
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 65. Synchronous ODT Timing Example
(AL = 3; CWL = 5; ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6)
CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
CKE
AL = 3
AL = 3
CWL - 2
ODT
ODTH4, min
ODTLoff = CWL + AL - 2
ODTLon = CWL + AL - 2
tAOF(min)
tAON(min)
DRAM_RTT
RTT_NOM
tAON(max)
tAOF(max)
TRANSITIONING DATA
Don't Care
Figure 66. Synchronous ODT example with BL = 4, WL = 7
CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CKE
ODTH4min
ODTH4
COMMAND
NOP
NOP
NOP
ODTH4
NOP
NOP
NOP
NOP
WRS4
NOP
NOP
ODT
ODTLoff = WL - 2
ODTLon = WL - 2
ODTLon = WL - 2
ODTLoff = WL - 2
tAON(min)
tAOF(min)
tAOF(min)
tAON(max)
RTT_NOM
DRAM_RTT
tAON(max)
tAOF(max)
tAON(min)
tAOF(max)
TRANSITIONING DATA
Don't Care
Figure 67. Dynamic ODT Behavior with ODT being asseted before and after the write
CK#
CK
COMMAND
T0
T1
T2
T3
T4
NOP
NOP
NOP
NOP
WRS4
ADDRESS
T5
T6
NOP
T7
NOP
T8
NOP
NOP
T9
T10
T11
T12
T13
T14
T15
T16
T17
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
VALID
ODTH4
ODTLoff
ODTH4
ODT
ODTLon
ODTLcwn4
tAON(min)
tADC(min)
tADC(min)
RTT
RTT_NOM
tAON(max)
RTT_WR
tAOF(min)
RTT_NOM
tADC(max)
tADC(max)
tAOF(max)
ODTLcnw
DQS, DQS#
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
WL
NOTES:
Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the registration of the Write command.
In this example, ODTH4 would be satisfied if ODT went low at T8 (4 clocks after the Write command).
Rev. 2.5
77
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 68. Dynamic ODT: Behavior without write command, AL = 0, CWL = 5
CK#
T0
T1
T2
VALID
VALID
VALID
T3
T4
T5
T6
T7
T8
T9
T10
T11
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
CK
COMMAND
ADDRESS
ODTLoff
ODTH4
ODT
ODTLon
tAON(min)
tADC(min)
RTT
RTT_NOM
tADC(max)
tAON(max)
DQS, DQS#
DQ
NOTES:
1. ODTH4 is defined from ODT registered high to ODT registered low, so in this example, ODTH4 is satisfied.
2. ODT registered low at T5 would also be legal.
TRANSITIONING DATA
Don't Care
Figure 69. Dynamic ODT: Behavior with ODT pin being asserted together with write
command for a duration of 6 clock cycles
CK#
T0
T1
T2
T3
NOP
WRS8
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
NOP
NOP
CK
COMMAND
NOP
NOP
NOP
NOP
NOP
NOP
ODTLcnw
ADDRESS
VALID
ODTH8
ODTLon
ODTLoff
ODT
tAON(min)
tAOF(min)
RTT
RTT_WR
ODTLcwn8
tADC(max)
tAOF(max)
DQS, DQS#
WL
Din
b
DQ
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
NOTES:
Example for BL8 (via MRS or OTF), AL = 0, CWL = 5. In this example, ODTH8 = 6 is exactly satisfied.
TRANSITIONING DATA
Rev. 2.5
78
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 70. Dynamic ODT: Behavior with ODT pin being asserted together with write
command for a duration of 6 clock cycles, example for BC4
(via MRS or OTF), AL = 0, CWL = 5.
T0
T1
T2
T3
NOP
WRS4
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
COMMAND
NOP
ODTLcnw
ADDRESS
VALID
ODTH4
ODTLon
ODTLoff
ODT
tAON(min)
RTT
RTT_WR
RTT_NOM
tAOF(max)
tADC(max)
tADC(max)
ODTLcwn4
tAOF(min)
tADC(min)
DQS, DQS#
WL
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
NOTES:
1. ODTH4 is defined from ODT registered high to ODT registered low, so in this example, ODTH4 is satisfied. TRANSITIONING DON T CARE
2. ODT registered low at T5 would also be legal.
TRANSITIONING DATA
Don't Care
Figure 71. Dynamic ODT: Behavior with ODT pin being asserted together with write
command for a duration of 4 clock cycles
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
NOP
WRS4
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
COMMAND
ODTLcnw
ADDRESS
VALID
ODTH4
ODTLon
ODTLoff
ODT
tAON(min)
tAOF(min)
RTT
RTT_WR
ODTLcwn4
tAOF(max)
tADC(max)
DQS, DQS#
WL
Din
n
DQ
Din
n+1
Din
n+2
Din
n+3
NOTES:
Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example, ODTH4 = 4 is exactly satisfied.
TRANSITIONING DATA
Rev. 2.5
79
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 72. Asynchronous ODT Timings on DDR3 SDRAM with fast ODT transition
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
CK
CKE
tIH
tIS
tIH
tIS
ODT
tAONPD(min)
tAOFPD(min)
RTT
RTT
tAONPD(max)
tAOFPD(max)
TRANSITIONING DATA
Don't Care
Figure 73. Synchronous to asynchronous transition during Precharge Power Down
(with DLL frozen) entry (AL = 0; CWL = 5; tANPD = WL - 1 = 4)
T0
T1
T2
NOP
REF
NOP
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
NOP
NOP
NOP
T9
T10
T12
T11
T13
Ta0
Ta1
Ta2
Ta3
CK#
CK
COMMAND
CKE
tRFC (min)
tANPD
tCPDED(min)
PD entry transition period
Last sync.
ODT
tAOF(min)
RTT
RTT
ODTLoff
tAOFPD(max)
tAOF(max)
ODTLoff +
tAOFPD(min)
Sync. or
async. ODT
tAOFPD(min)
RTT
RTT
ODTLoff +
tAOFPD(max)
First async.
ODT
tAOFPD(min)
RTT
RTT
tAOFPD(max)
TIME BREAK
TRANSITIONING DATA
Don't Care
Figure 74. Synchronous to asynchronous transition after Refresh command
(AL = 0; CWL = 5; tANPD = WL - 1 = 4)
T0
T1
T2
NOP
REF
NOP
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
NOP
NOP
NOP
T9
T10
T11
T12
T13
Ta0
Ta1
Ta2
Ta3
CK#
CK
COMMAND
CKE
tRFC (min)
tANPD
tCPDED(min)
PD entry transition period
Last sync.
ODT
RTT
tAOF(min)
RTT
ODTLoff
tAOFPD(max)
tAOF(max)
ODTLoff + tAOFPD(min)
Sync. or
async. ODT
tAOFPD(min)
RTT
RTT
ODTLoff + tAOFPD(max)
First async.
ODT
tAOFPD(min)
RTT
RTT
tAOFPD(max)
TIME BREAK
Rev. 2.5
80
TRANSITIONING DATA
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 75. Asynchronous to synchronous transition during Precharge Power Down
(with DLL frozen) exit (CL = 6; AL = CL - 1; CWL = 5; tANPD = WL - 1 = 9)
CK#
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Tb0
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Tb1
Tb2
Tc0
Tc1
Tc2
Td0
Td1
NOP
NOP
NOP
NOP
NOP
NOP
CK
COMMAND
NOP
CKE
tXPDLL
tANPD
PD exit transition period
Last async.
ODT
tAOFPD(min)
RTT
RTT
tAOFPD(max)
ODTLoff +
tAOF(min)
tAOFPD(max)
Sync. or
async. ODT
tAOFPD(min)
RTT
RTT
ODTLoff +
tAOF(max)
ODTLoff
First sync.
ODT
tAOF(min)
RTT
RTT
tAOF(max)
TIME BREAK
TRANSITIONING DATA
Don't Care
Figure 76. Transition period for short CKE cycles, entry and exit period overlapping
(AL = 0, WL = 5, tANPD = WL - 1 = 4)
T0
T1
T2
T3
T4
T5
REF
NOP
NOP
NOP
NOP
NOP
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
COMMAND
NOP
CKE
tANPD
tRFC (min)
PD entry transition period
PD exit transition period
tANPD
tXPDLL
short CKE low transition period
CKE
tANPD
short CKE high transition period
tXPDLL
TIME BREAK
Rev. 2.5
81
Don't Care
Nov. /2014
EtronTech
EM6GD08EWUC
Figure 77. 78-Ball BGA Package 8x10.5x1.2mm(max) Outline Drawing Information
Pin A1 INDEX
Pin A1 INDEX
Top View
Bottom View
Side View
Symbol
A
A1
D
E
D1
E1
e
b
Rev. 2.5
DETAIL : "A"
Dimension in inch
Dimension in mm
Min
Nom Max
Min
Nom Max
--0.047
--1.20
0.012
-0.016 0.25
-0.40
0.311 0.315 0.319 7.90 8.00 8.10
0.409 0.413 0.417 10.40 10.50 10.60
-0.252
--6.40
--0.378
--9.60
--0.031
--0.80
-0.016 0.018 0.020 0.40 0.45 0.50
82
Nov. /2014