13 product app file 1

SMARTPHONE
SELECTION GUIDE
Your Component, Our Profession
Jun 2016
www.panjit.com
Electrostatic charges can accumulate in human body through induction and
friction. This build up of charge can then be discharged when touching a
smartphone creating voltage spikes that can permanently damage sensitive
electronic components in the phone. The following usage causes ESD:
 Touching screen and keyboard  SIM/Flash card plugging
 Earphone plugging
 Antenna signal reception
 USB plugging
Spaces between components are becoming smaller since smartphone is
thinner than before so modules inside the phone are easily impacted by ESD.
The places where a ESD protector is added in this picture, are the ones that
are frequently impacted by ESD.
NFC
USB
Interface
4G
Power
Manager
Memory
Interface
SIM Interface
Touch Panel
GPS
WLAN
Baseband
Processor
Bluetooth
FM
Speaker
Earphone
Camera
Module
Microphone
LCD Display
Key-Pad
■ Recommended device
For Speaker / Earphone / Key-Pad / SIM Card
Application Schematics:
Part Number
UNI/BI
VRWM(V)
IR(μA)
CJ(pF)Max.
IPP(A)
VR=VRWM
VR=0V, f=1MHz
Max.
Package
PEC3103M1PQ
Bi
3.3
1
15
5
DFN1006-2L
PEC3105M1PQ
Bi
5
1
15
5
DFN1006-2L
PEC3205M2PQ
Bi
5
1
25
5
DFN1006-3L
PEC3705M1Q
Bi
5
1
70
15
DFN 2L
■ Recommended device
For SD Card / USB / HDMI / Antenna
(NFC / WLAN / GPS / FM)
Application Schematics:
Part Number
UNI/BI
VRWM(V)
IR(μA)
CJ(pF) Max.
IPP(A)
VR=VRWM
VR=0V, f=1MHz
Max.
Package
PE2105S1PQ
Uni
5
1
1.0
5
DFN0603
PE1905M1PQ
Uni
5
1
0.9
5
DFN1006-2L
PE1905M2PQ
Uni
5
1
0.9
5.5
DFN1006-3L
PE1905C1PES
Uni
5
1
0.9
5
SOD-523
PEC2305S1Q
Bi
5
0.5
3.5
2
DFN0603
PEC1605M1Q
Bi
5
0. 075
0.6
2
DFN 2L
PEC1918M1PQ
Bi
18
1
0.9
2.5
DFN1006-2L
■ Recommended device
For V-BAT
Part Number
UNI/BI
VRWM(V)
IR(μA)
CJ(pF) Max.
IPP(A)
VR=VRWM
VR=0V, f=1MHz
Max.
Package
PEC4104M1PQ
Bi
4.5
1
100
30
DFN1006-2L
PEC4304C1PCF
Bi
4.5
2
300
130
SOD-323
PD
(mW)
VZ
@5mA(V)
ZZT
@1mA(Ω)
ZZK
@0.5mA(Ω)
IR
@4.2V(uA)
PZS525V3BPCF
500
5.1~5.6
55
500
5
SOD-323
PZS525V3BPES
500
5.1~5.6
55
500
5
SOD-523
Part Number
Package
■ Recommended device
For V-Charge
Part Number
UNI/BI
VRWM(V)
IR(μA)
CJ(pF) Max.
IPP(A)
VR=VRWM
VR=0V, f=1MHz
Max.
Package
PE4H07X1PQ
Uni
7
1
2800
180
DFN2020-3L
PE4507C1PCF
Uni
7
1
550
50
SOD-323
PE4H12X1PQ
Uni
12
1
1500
80
DFN2020-3L
PE4412C1PCF
Uni
12
1
400
50
SOD-323
PE4315C1PCF
Uni
15
1
350
30
SOD-323
PEC4507C1PAL
Bi
7
1
550
80
SOD-123FL
PEC4312C1PAL
Bi
12
1
380
100
SOD-123FL
PEC4215C1PAL
Bi
15
1
250
80
SOD-123FL
■ Recommended device
For Other Parts
Application
Function
Schottky Diode
Part Number
Package
RB751S40
SOD-523
BZT52-B6V2S
SOD-323
Schottky Diode
BAT54FN2
DFN 2L
Schottky Diode
RB551V-30
SOD-323
Schottky Diode
SS0840WS
SOD-323
PJA3448
SOT-23
NPN Digital Transistor
PDTC143TV
SOT-723
NPN Digital Transistor
PDTC143ZV
SOT-723
PNP Transistor
2SB1427S
SOT23-6L
NPN Transistor
2SC503HE
SOT-523
PNP Transistor
2SB1708H
SOT89-3L
PNP Transistor
2SB1427Q
DFN3020-8L
PNP Transistor + N-MOSFET
PJQ2702
DFN2020-6L
PNP Transistor + N-MOSFET
PJQ2703
DFN2020-6L
N-MOSFET
PJE8406
SOT-523
N-MOSFET
PJE138K
SOT-523
N-MOSFET
PJV1708
SOT-723
N-MOSFET
PJV1704
SOT-723
P-MOSFET
PJV1703
SOT-723
P-MOSFET+Schottky
PJQ2701
DFN3020-8L
Vibrating Motor
Zener Diode
LED Backlight
N-MOSFET
Keypad LED
V-Charge
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