Nitride Epitaxy Products Cree produces GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on up to 100 mm diameter SiC and sapphire substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specications (1). Additional comments, terms and conditions may be found at the end of this document. Nitride Epitaxial Layer Specications – Structural Property Value or Range Substrate SiC (n-type or Semi-Insulating) Al2O3 Precision Measurement Technique Composition AlxInyGa1-x-yN, 0 ≤ x ≤ 0.4, 0 ≤ y ≤ 0.2, certain restrictions apply ∆ x = ± 0.015, ∆ y = ± 0.02 XRD peak splitting and PL – midradius Thickness (2) 0.001 μm to 10.0 μm GaN 0.2 nm to 1.0 µm AlN 0.001 μm to 3.0 μm AlxInyGa1-x-yN 10.0 nm to 250.0 nm SiN (Cap Layer) Average thickness within ± 15% of target thickness and uniformity < 10%. (3) X-ray or white light interferometry GaN Crystallinity < 300 arcsec (3 μm layer on Al2O3 substrate) — — — XRD (0006) FWHM (center point) — XRD (0006) FWHM (center point) (4) — Differential interference microscopy at 50x in cross pattern with 5 mm edge exclusion — X-ray / AFM < 250 arcsec (3 μm layer on SiC substrate (5)) Al0.25Ga0.75N < 700 arcsec (3 μm layer on Al2O3 substrate) < 500 arcsec (3 μm layer on SiC substrate (5)) Visible Defects < 50 / cm2 Dislocation Density <1E9 / cm2, total Wafer Shape Warp ≤ 45 microns for 3”, ≤ 55 microns for 100 mm <2 microns Non-contact optical inspection Nitride Epitaxial Layer Specications – Electrical Property Value or Range Dopant type n-type (Si) Precision Measurement Technique — — p-type (Mg) Carrier concentration (undoped, substrate dependent) < 1E16 cm-3, n-type — Carrier concentration (n-type, Si doped) 1E16 to 2E19 cm-3 ± 50% Hg probe CV (wafer center, room temperature) Carrier concentration (p-type, Mg doped) 5E16 to 5E17 cm-3 (activated) ± 50% Hg probe CV (wafer center, room temperature) Carrier Concentration of HEMT structure >8E12 cm2 (25% Al / 25 nm AlGaN) — Contactless non-destructive carrier concentration Mobility of HEMT structure μAlGaN ≥ 1600 cm2 V-1 s-1 (25.0% Al / 25.0 nm AlGaN) — Contactless non-destructive mobility Sheet resistivity < 5% uniformity — Contactless non-destructure sheet resistivity Subject to change without notice. www.cree.com Hg probe CV 1 1. 2. 3. Certain additional restrictions may apply and will be presented on the product quotation. Range given for undoped layers. Maximum achievable thickness for doped layers or heterostructures will be reduced. Precision specication applies only to layers ≥ 0.01 μm thick. Uniformity = (100 x standard deviation / mean). Additional Comments, Terms and Conditions Nitride epiwafers are offered subject to the Cree, Inc. Sales Terms and Conditions, a copy of which may be obtained by contacting a Cree representative or by downloading from www.cree.com/ftp/pub/termsandconditionsread.pdf. In particular, the recipient may not use purchased SiC wafers in the bulk growth of silicon carbide or Group III-nitridebased materials or in the development of processes for bulk growth of such materials. Sale and export of Nitride epiwafers and some substrates are limited by license. Please contact Cree for details. Specication sheets may change without notice. Please contact Cree or one of our representatives if an updated specication sheet is desired. Current specication sheets are available for download at www.cree.com. Copyright © 2004-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 MAT-NITRIDEEPITAXY.00B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com