2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Stable operation over wide temperature range Low leakage current Low peak point current Guaranteed minimum pulse voltage MAXIMUM RATINGS Rating Value Total RMS Power Dissipation (Unstabilized) 450mW Total RMS Power Dissipation (Stabilized) 600mW RMS Emitter Current 70mA Peak Emitter Current (TJ = 150°C) 2A Emitter Reverse Voltage (TJ = 150°C) 60 V Operating Temperature Range -65° to +140°C Operating Temperature Range (Stabilized) -65° to +175°C Storage Temperature Range -65° to +175°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Intrinsic standoff ratio (1) Part number VRR = 10V Interbase resistance (2) Modulated interbase current Maximum Emitter saturation voltage Minimum Emitter reverse current Peak point current Valley point current Base one peak pulse voltage (3) VBB = 3V IR = 50mA VBB = 10V IE = 50mA VBB = 10V VB2E = 60V TJ = 150°C VB2E = 10V VB2E =30V VBB = 25V RB2 = 100Ω VBB = 20V RBBO IB2(MOI) VE(SAT) IEB2O IEB2O IEB2O IP IV VOB1 kΩ mA Volts µA µA µA µA mA Volts ŋ Min Max Min Max Min Max 2N489 .51 .62 4.7 6.8 6.8 22 5 2 20 - 12 8 - 2N489A .51 .62 4.7 6.8 6.8 22 4 2 20 - 12 8 3 2N489B .51 .62 4.7 6.8 6.8 22 4 2 20 0.2 6 8 3 2N490 .51 .62 6.2 9.1 6.8 22 5 2 20 - 12 8 - 2N490A .51 .62 6.2 9.1 6.8 22 4 2 20 - 12 8 3 2N490B .51 .62 6.2 9.1 6.8 22 4 2 20 0.2 6 8 3 2N490C .51 .62 6.2 9.1 6.8 22 4 2 20 0.02 2 8 3 2N491 .56 .68 4.7 6.8 6.8 22 5 2 20 - 12 8 - 2N491A .56 .68 4.7 6.8 6.8 22 4.3 2 20 - 12 8 3 2N491B .56 .68 4.7 6.8 6.8 22 4.3 2 20 0.2 6 8 3 2N492 .56 .68 6.2 9.1 6.8 22 5 2 20 - 12 8 - 2N492A .56 .68 6.2 9.1 6.8 22 4.3 2 20 - 12 8 3 2N492B .56 .68 6.2 9.1 6.8 22 4.3 2 20 0.2 6 8 3 Rev. 20150306 2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Intrinsic standoff ratio (1) Part number VRR = 10V Interbase resistance (2) Modulated interbase current Maximum Emitter saturation voltage Minimum Emitter reverse current Peak point current Valley point current Base one peak pulse voltage (3) VBB = 3V IR = 50mA VBB = 10V IE = 50mA VBB = 10V VB2E = 60V TJ = 150°C VB2E = 10V VB2E =30V VBB = 25V RB2 = 100Ω VBB = 20V RBBO IB2(MOI) VE(SAT) IEB2O IEB2O IEB2O IP IV VOB1 Volts µA µA µA µA mA Volts 4.3 2 20 0.02 2 8 3 ŋ kΩ mA Min Max Min Max Min Max 2N492C .56 .68 6.2 9.1 6.8 22 2N493 .62 .75 4.7 6.8 6.8 22 5 2 20 - 12 8 - 2N493A .62 .75 4.7 6.8 6.8 22 4.6 2 20 - 12 8 3 2N493B .62 .75 4.7 6.8 6.8 22 4.6 2 20 0.2 6 8 3 2N494 .62 .75 6.2 9.1 6.8 22 5 2 20 - 12 8 - 2N494A .62 .75 6.2 9.1 6.8 22 4.6 2 20 - 12 8 3 2N494B .62 .75 6.2 9.1 6.8 22 4.6 2 20 0.2 6 8 3 2N494C .62 .75 6.2 9.1 6.8 22 4.6 2 20 0.02 2 8 3 Note 1: The intrinsic standoff ratio, ƞ, is essentially constant with temperature and interbase voltage. ƞ is defined by the equation: V P = ƞ VBB + 200/TJ, where VP = peak point emitter voltage, VBB = Interbase voltage, TJ = Junction temperature (Degrees Kelvin). Note 2: The interbase resistance is nearly ohmic and increases with temperature in a well defined manner. The temperature coefficient at 25°C is approximately 0.8%/°C. Note 3: The base-one peak pulse voltage is measured in the circuit below. This specification on the A and B versions is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits. Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS MECHANICAL CHARACTERISTICS Case TO-5 Marking Alpha-numeric Polarity See below Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N489(A,B)-2N494(A,B) SILICON UNIJUNCTION TRANSISTORS Rev. 20150306