PCN20090502

Product Change Notices
PCN No.:20090502
Date: 05/12/2009
This is to inform you that AME8755 datasheet has been changed from Rev. A.01 to
Rev. B.01. This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact AME, Inc.
within 30 days of receipt of this notification.
If we do not receive any response from you within 30 calendar days from the
date of this notification, we will consider that you have accepted this PCN.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Andy Su
Email: Andy_Su @ame.com.tw
Expected 1st Device Shipment Date: 11/17/2008
Earliest Year/Work Week of Changed Product: 0844
Description of Change :
Change Line regulation spec on Electrical Specification on Page 8.
From:
To:
Reason for Change:
Correct Line regulation spec per market survey.
QPM018B-B
AME
AME8755
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
n General Description
The AME8755 is highly accurate, dual channel, high
PSRR, low quiescent current CMOS LDO. The AME8755
includes a reference voltage source, error amplifiers, over
current limit and thermal shutdown and consumes only
70µA(typical) quiescent current at no load with both channels enabled. The EN function allows the output of each
channel to be turned on and off independently.
n Typical Application
VOUT 2
EN2
OUT2
AME8755
VIN
IN
EN1
VOUT1
OUT1
GND
C2
1µF
C3
1µF
C1
1µF
n Features
l Guaranteed 150mA Output
l Accurate to within + 2%
l 1.2V to 3.3V Factory-Preset Output
l Over Current Protection
l Over Temperature Shutdown
l High PSRR (Typ. 70dB)
l Low Quiescent Current (Typ. 70µA)
l All AME's Green Products Meet RoHS
Standards.
n Applications
l Mobile Phones
l Digital Cameras
l PDAs
l Wireless LAN Applications
Rev. B.01
1
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Function Block Diagram
EN2
Overcurrent
Limit
OUT2
Bandgap
Reference
Thermal
Shutdown
IN
Overcurrent
Limit
OUT1
EN1
GND
2
Rev. B.01
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Pin Configuration
SOT-26
Top View
SOT-26
Top View
6
5
4
AME8755-AEYxxxxxx
6
5
4
1. EN1
1. OUT1
AME8755
2. IN
3. OUT2
2. IN
AME8755
5. GND
5. GND
2
3
6. EN1
* Die Attach:
Conductive Epoxy
Rev. B.01
3. EN2
4. OUT2
4. EN2
1
AME8755-BEYxxxxxx
1
2
3
6. OUT1
* Die Attach:
Conductive Epoxy
3
AME
AME8755
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
n Pin Description
Pin Name
Pin Description
OUT1
LDO voltage regulator output pin.
It should be decoupled with a 1µF or greater value low ESR ceramic capacitor.
IN
4
Input voltage pin.
It should be decoupled with 1µF or greater capacitor.
OUT2
LDO voltage regulator output pin.
It should be decoupled with a 1µF or greater value low ESR ceramic capacitor.
EN2
Enable pin.
When pulled low, the PMOS pass transistor turns off OUT2, current consuming
less than 1µA.
GND
Ground connection pin.
EN1
Enable pin.
When pulled low, the PMOS pass transistor turns off OUT1, current consuming
less than 1µA.
Rev. B.01
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Ordering Information
AME8755 - x x x xxx xxx
Output Voltage 2
Output Voltage 1
Number of Pins
Package Type
Pin Configuration
Pin
Configuration
A
(SOT-26)
B
(SOT-26)
Rev. B.01
1. OUT1
2. IN
3. OUT2
4. EN2
5. GND
6. EN1
Package
Type
E: SOT-2X
Number of
Pins
Y:
6
Output
Voltage1
(Dual LDOs)
330:
300:
285:
280:
180:
120:
3.3V
3.0V
2.85V
2.8V
1.8V
1.2V
Output
Voltage2
(Dual LDOs)
330:
300:
285:
280:
180:
120:
3.3V
3.0V
2.85V
2.8V
1.8V
1.2V
1. EN1
2. IN
3. EN2
4. OUT2
5. GND
6. OUT1
5
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Available Options
Part Number
Marking
AME8755-AEY180280
BXHMXX
AME8755-BEY180280
BYGMXX
AME8755-AEY120120
BYUMXX
AME8755-AEY330330
BYVMXX
Output Voltage
VOUT1=1.8V
VOUT2=2.8V
VOUT1=1.8V
VOUT2=2.8V
VOUT1=1.2V
VOUT2=1.2V
VOUT1=3.3V
VOUT2=3.3V
Package
Operating Ambient
Temperature Range
SOT-26
-40OC to +85OC
SOT-26
-40OC to +85OC
SOT-26
-40OC to +85OC
SOT-26
-40OC to +85OC
Note:
1. The first 3 places represent product code. It is assigned by AME such as BXH.
2. A bar on top of first letter represents Green Part such as BXH.
3. The last 3 places MXX represent Marking Code. It contains M as date code in "month", XX as LN code and
that is for AME internal use only. Please refer to date code rule section for detail information.
4. Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package
type.
6
Rev. B.01
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Absolute Maximum Ratings
Parameter
Maximum
Unit
-0.3 to +6
V
Output Current
PD / [2V IN -(V OUT1+VOUT2)]
mA
Output Voltage
GND-0.3 to VIN +0.3
V
Input Voltage
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device.
n Recommended Operating Conditions
Parameter
Symbol
Rating
Ambient Temperature Range
TA
-40 to +85
Junction Temperature Range
TJ
-40 to +125
Storage Temperature Range
TSTG
-65 to +150
Unit
o
C
n Thermal Information
Parameter
Package
Die Attach
Thermal Resistance*
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
Symbol
Maximum
θ JC
81
Unit
o
SOT-26
Conductive Epoxy
Internal Power Dissipation
Solder Iron (10Sec)**
θJA
260
PD
400
350
C/W
mW
o
C
* Measure θJC on backside center of molding compund if IC has no tab.
** MIL-STD-202G 210F
Rev. B.01
7
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Electrical Specifications
VIN = VOUT + 1V or 2.7V, whichever is higher, where VOUT is the higher one of VOUT1(nom) and VOUT2(nom) , IOUT = 1mA, VEN =
VIN and COUT = 1µF(X7R), CIN = 1µF unless otherwise noted. Typical values are at TA = 25oC.
Parameter
Input Voltage
Symbol
Test Conditions
Min
Typ
Max
Units
VIN
2.7
5.5
V
Output Voltage Accuracy
VOUT
-2
2
%
Output Current
IOUT
Quiescent Current
Dropout Voltage
Output Voltage Line Regulation
(Note2)
IQ
VDROP
150
VEN = VIN , IOUT = 0mA
IOUT=150mA
mA
70
120
3.00V ≦ VOUT ≦ 3.30V
250
350
2.50V ≦ VOUT ≦ 2.95V
300
450
2.20V ≦ VOUT ≦ 2.45V
350
550
VOUT ≦2.15V
Note 1
µA
mV
VOUT+Vdrop< VIN < 5.5V, where VOUT
REGLINE
is the higher one of VOUT1(nom) and
-0.2
0.025
0.2
%/V
VOUT2(nom)
Output Voltage Load
Regulation (Note3)
REGLOAD
1mA < IOUT < 150mA
Output Current Limit
ILIM
ROUT = 1Ω
Shutdown Current
ISHDN
VEN = 0V, VIN(min) < VIN < VIN(max)
0.1
Power Supply Ripple Rejection
PSRR
f = 1kHz, IOUT = 1mA
70
Enable High (enabled)
VEN(HI)
VIN(min) < VIN < VIN(max)
1.4
VIN
V
Enable Low (shutdown)
VEN(LO)
VIN(min) < VIN < VIN(max)
0
0.4
V
IEN
VEN = VIN
0.1
1
µA
TSHDN
Shutdown, temperature increasing
160
TRS
Restore, temperature decreasing
140
Enable Pin Current (enabled)
Thermal Shutdown Temperature
-0.005 0.0025 0.005 %/mA
300
550
mA
1
µA
dB
O
C
Note 1. For VOUT ≦ 2.15V, VDROP=2.7V-V OUT
Note 2. (△ VOUT/△ VIN)*% / VOUT
Note 3. (△ VOUT/VOUT)*% / △ IOUT
8
Rev. B.01
AME
AME8755
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
n Detailed Description
The AME8755 contains two PMOS pass transistors, a
reference voltage source, error amplifiers, over current
protection, and thermal shutdown. The P-channel pass
transistor receives data from the error amplifier, over current limit, and thermal protection circuits. During normal
operation, the error amplifier compares the output voltage
to a precision reference. The output voltages are controlled and stabilized by a system of negative feedback.
The AME8755 requires an output capacitor connected
between the output and ground to stabilize the internal
control loops. The minimum recommended output capacitor is 1µF. The IC's internal circuitry can be turned on
and off via the signal from the EN1 and EN2 pins, for
example: OUT1 is turned on when EN1 is greater than
1.4V. And OUT1 is turned off when EN1 is less than
0.4V, resulting in greatly reduced power consumption,
same operation for EN2 and OUT2.
The AME8755's over current limit and thermal shutdown
protection prevent the IC from damaging. The internal
over current protection helps protect the regulator during
fault conditions. During over current protection, the output will be pulled down and source a nearly fixed amount
of current that is largely independent of the output voltage. Thermal shutdown protection disables both outputs
when the junction temperature of either channel rises to
approximately 160oC, allowing the device to cool. When
the junction temperature cools to approximately 140oC,
the output circuitry is again enabled. This limits the dissipation of the regulator, protecting it from damage due to
over heating.
Rev. B.01
9
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
VOUT vs. Temperature
2.884
1.833
2.861
1.821
2.838
1.809
2.815
1.797
2.792
V OUT (V)
V OUT (V)
VOUT vs. Temperature
1.845
1.785
1.773
1.761
2.746
2.723
1.749
V OUT = 1.8V
IOUT = 1mA
1.737
1.725
-40
2.769
-25
-10
+5
+20 +35
+50
+65 +80 +95 +110 +125
2.700
V OUT = 2.8V
IOUT = 1mA
2.677
2.654
-40
-25
-10
+5
VDROPOUT vs. Temperature
IQ vs. Temperature
120
285
110
270
100
255
90
240
80
225
210
195
V OUT = 2.8V
IOUT = 150mA
165
IOUT=150mA
70
60
-25
-10
+5
+20 +35 +50
+65 +80 +95 +110 +125
40
30
20
-40
o
-25
- 10
+5
+20 +35 + 50 +65
o
+80 +95 +110 +125
Temperature ( C)
Temperature ( C)
Line Transient Response
Line Transient Response
VIN = 2.8V~5.5V
IOUT = 1mA
VOUT = 1.8V
TIME (400µSec/DIV)
VOUT (20mV/DIV)
VIN (1V/DIV)
VIN (1V/DIV)
VOUT (20mV/DIV)
I OUT =1mA
50
180
10
+35 +50 +65 +80 +95 +110 +125
Temperature (o C)
300
150
-40
+20
Temperature ( C)
I Q (µA)
VDROPOUT (V)
o
VIN = 3.8V~5.5V
IOUT = 1mA
VOUT = 2.8V
TIME (400µSec/DIV)
Rev. B.01
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
Load Transient Response
I L (50mA/DIV)
IL (50mA/DIV)
VIN (100mV/DIV)
VIN (100mV/DIV)
Load Transient Response
TIME (40µSec/DIV)
V IN = 2.8V
VOUT = 1.8V
I OUT = 1mA~150mA
TIME (40µSec/DIV)
VIN =3.8V
VOUT = 2.8V
IOUT = 1mA~150mA
Power Supply Rejection Ratio
Power Supply Rejection Ratio
100
90
80
100
V IN = 3.8V
V OUT = 1.8V
90
IOUT =1mA
80
PSRR (dB)
PSRR (dB)
IOUT =10mA
60
50
40
IOUT =30mA
50
40
I OUT=30mA
20
IOUT=100mA
10
10
0
1K
10K
Frequency (Hz)
Rev. B.01
IOUT =10mA
60
30
I OUT=100mA
20
0
IOUT =1mA
70
70
30
V IN = 3.8V
VOUT = 2.8V
100K
1M
1K
10K
100K
1M
Frequency (Hz)
11
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Date Code Rule
Month Code
1: January 7: July
2: February 8: August
3: March
9: September
4: April
A: October
5: May
B: November
6: June
C: December
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
Marking
A
M
A
M
A
M
A
M
A
M
A
M
A
M
A
M
A
M
A
M
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Year
xxx0
xxx1
xxx2
xxx3
xxx4
xxx5
xxx6
xxx7
xxx8
xxx9
n Tape and Reel Dimension
SOT-26
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
12
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-26
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
Rev. B.01
AME
High PSRR, Low Quiescent Current,
150mA Dual CMOS LDO
AME8755
n Package Dimension
SOT-26
Top View
Side View
SYMBOLS
L
PIN 1
MILLIMETERS
MAX
MIN
MAX
A
0.90
1.30
0.0354
0.0512
A1
0.00
0.15
0.0000
0.0059
b
0.30
0.55
0.0118
0.0217
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
e
S1
H
2.60
A
θ1
3.00
0.1024
0
o
0.015 BSC
10
0.95 BSC
0.1181
o
0
o
10
o
0.037 BSC
A1
S1
0.075 BSC
0.37 BSC
L
Front View
INCHES
MIN
θ1
E
H
D
e
b
Rev. B.01
13
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , May 2009
Document: 1263-DS8755-B.01
Corporate Headquarter
AME, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District
Taipei 114, Taiwan.
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989