AS4DDR264M72PBG

iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS
iNTEGRATED Plastic Encapsulated Microcircuit
FEATURES
BENEFITS
DDR2 Data rate = 667, 533, 400
Available in Industrial, Enhanced and Military Temp
Package:
• Proprietary Enchanced Die Stacked iPEM
• 208 Plastic Ball Grid Array (PBGA), 16 x 23mm
• 1.00mm ball pitch
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4n-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes (I/T Version)
On Die Termination (ODT)
Adjustable data – output drive strength
1.8V ±0.1V common core power and I/O supply
Programmable CAS latency: 3, 4, 5, 6 or 7
Posted CAS additive latency: 0, 1, 2, 3, 4 or 5
Write latency = Read latency - 1* tCK
Organized as 64M x 72
Weight: AS4DDR264M72PBG1 ~ 2.0 grams typical
61% Space Savings
55% I/O reduction vs Individual package
approach
Reduced part count
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradable to 128M x 72 density in future
Pin/Function equivalent to White
W3H64M72E-xBSx
ConfigurationAddressing
Parameter
Configuration
RefreshCount
RowAddress
BankAddress
ColumnAddress
64Megx72
8Megx16x8Banks
8K
A0ͲA12(8k)
BA0ͲBA2(8)
A0ͲA9(1K)
NOTE: Self Refresh Mode available on Industrial and Enhanced temp. only
FUNCTIONAL BLOCK DIAGRAM
Ax, BA0-2
ODT
VRef
VCC
VSS
VSSQ
VCCQ
VCCQ
VCCQ
VCCQ
VCCQ
VSSQ
VCCL
VSSQ
VCCL
VSSQ
VCCL
VSSQ
VCCL
VSSQ
VCCL
VSSDL
A
VSSDL
B
VSSDL
C
VSSDL
VSSDL
D
DQ64-71
CS\
WE\
RAS\
CAS\
CKE\
ODT
UDMx, LDMx
UDSQx,UDSQx\
LDSQx, LDSQx\
CKx,CKx\
A
AS4DDR264M72PBG1
Rev. 3.1 01/10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
ODT
LDM4
2
2
DQ0-15 B
DQ16-31 C
UDM4
DQ32-47 D
DQ48-63
Micross Components reserves the right to change products or specifications without notice.
1
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
SDRAM-DDRII PINOUT TOP VIEW
1
A
2
3
4
5
6
7
8
9
10
11
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vss
A
B
Vcc
Vss
NC
NC
NC
NC
NC
NC
NC
Vss
Vcc
B
C
Vss
NC
NC
NC
NC
NC
NC
DQ34
CK3
CK3\
Vss
C
D
DQ35
DQ51
NC
NC
NC
NC
DQ50
DQ53
DQ37
CK2\
CK2
D
E
DQ52
DQ36
DQ33
NC
BA2
NC
DQ39
LDQS2
LDQS3
DQ48
DQ32
E
F
LDM3
LDM2
DQ49
DQ43
DQ59
NC
DQ55
DQ58
DQ42
G
DQ38
DQ54
DQ60
DQ57
UDM2
Vss
DQ63
DQ56
DQ40
H
UDM3
DQ44
DQ41
DQ46
DQ62
Vcc
UDQS2\
DQ47
J
Vcc
A6
A10
A9
Vcc
Vss
Vcc
A3
A12
RFU
Vcc
J
K
Vss
A0
A11
Vcc
Vss
Vref
Vss
Vcc
A1
BA1
Vss
K
L
Vcc
A2
A4
A8
Vcc
Vss
Vcc
BA0
A5
A7
Vcc
L
DQ15
UDQS0\
Vcc
DQ30
DQ14
DQ9
DQ12
DQ8
DQ24
DQ31
Vss
UDM0
DQ25
DQ28
DQ22
DQ6
N
DQ10
DQ26
DQ23
ODT
DQ27
DQ11
DQ17
LDM0
LDM1
p
M UDQS1\ UDQS1 UDQS0
N
P
DQ13
DQ29
LDQS1\ LDQS0\
LDQS2\ LDQS3\ F
DQ61
DQ45
G
UDQS2 UDQS3 UDQS3\ H
UDM1 M
R
DQ0
DQ16
LDQS1
LDQS0
DQ7
LDQS4\ UDQS4 UDQS4\
DQ1
DQ4
DQ20
R
T
CK0
CK0\
DQ5
DQ21
DQ18
LDQS4
DQ71
CKE
WE\
DQ19
DQ3
T
U
Vss
CK1\
CK1
DQ2
RAS\
CAS\
DQ64
DQ70
DQ65
DQ68
Vss
U
V
Vcc
Vss
CK4\
CK4
CS\
DQ66
DQ69
LDM4
DQ67
Vss
Vcc
V
W
Vss
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vss
W
1
2
3
4
5
6
7
8
9
10
11
Ground
CNTRL
Array Power
UNPOPULATED
Address
Level REF.
NC
RFU
Data I/O
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
2
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
BGA Locations
P6
C9,C10,D10,D11,T1,T2,
U2,U3,V3,V4
T8
V5
U5
U6
T9
G5,H1,M11,N7,
F1,F2,P10,P11,V8
H9,H10,M2,M3,R7
H7,H11,M1,M5,R8
E8,E9,R3,R4,T6
F10,F11,P1,P2,R6
J2,J3,J4,J8,J9,K2,
K3,K9,L2,L3,L4,L9,L10
Symbol
ODT
CKx, CKx\
Type
CNTL Input
CNTL Input
Description
On-Die-Termination: Registered High enables on data bus termination
Differential input clocks, one set for each x16bits
CKE
CS\
RAS\
CAS\
WE\
UDMx
LDMx
UDQSx
UDQSx\
LDQSx
LDQSx\
Ax
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
Input
Clock enable which activates all on silicon clocking circuitry
Chip Selects, one for each 16 bits of the data bus width
Command input which along with CAS\, WE\ and CS\ define operations
Command input which along with RAS\, WE\ and CS\ define operations
Command input which along with RAS\, CAS\ and CS\ define operations
One Data Mask cntl. for each upper 8 bits of a x16 word
One Data Mask cntl. For each lower 8 bits of a x16 word
Data Strobe input for upper byte of each x16 word
Differential input of UDQSx, only used when Differential DQS mode is enabled
Data Strobe input for lower byte of each x16 word
Differential input of LDQSx, only used when Differential DQS mode is enabled
Array Address inputs providing ROW addresses for Active commands, and
the column address and auto precharge bit (A10) for READ/WRITE commands
J10
RFU
L8,K10,E5
BA0,BA1,BA2
C8,D1,D2,D7,D8,D9,E1,
DQx
E2,E3,E7,E10,E11,F3,
F4,F5,F7,F8,F9,G1,G2,
G3,G4,G7,G8,G9,G10,
G11,H2,H3,H4,H5,H8,
M4,M7,M8,M9,M10,N1,
N2,N3,N4,N5,N8,N9,
N10,N11,P3,P4,P5,P7,
P8,P9,R1,R2,R5,R9,
R10,R11,T3,T4,T5,T7,
T10,T11,U4,U7,U8,U9,
U10,V6,V7,V9
k6
Vref
A2,A4,A5,A7,A8,A10,
VCC
B1,B11,H6,J1,J5,J7,J11,
K4,K8,L1,L5,L7,L11,M6,
V1,V11,W2,W4,W5,
W7,W8,W10
A3,A6,A9,A11,B2,B10,
VSS
C1,C11,G6,J6,K1,K5,
K7,K11,L6,N6,U1,U11,
V2,V10,W1,W3,W6,
W9,W11
B3,B4,B5,B6,B7,B8,B9,
NC
C2,C3,C4,C5,C6,C7,D3,
D4,D5,D6,E4, E6, F6
A1
UNPOPULATED
AS4DDR264M72PBG1
Rev. 3.1 01/10
Future Input
Input
Bank Address inputs
Input/Output Data bidirectional input/Output pins
Supply
Supply
SSTL_18 Voltage Reference
Core Power Supply
Supply
Core Ground return
No connection
Unpopulated ball matrix location (location registration aid)
Micross Components reserves the right to change products or specifications without notice.
3
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
DESCRIPTION
The 4.8Gb DDR2 SDRAM, a high-speed CMOS, dynamic
random-access memory containing 4,831,838,208 bits.
Each of the five chips in the MCP are internally configured
as 8-bank DRAM. The block diagram of the device is
shown in Figure 2. Ball assignments and are shown in
Figure 3.
An auto precharge function may be enabled to provide a
self-timed row precharge that is initiated at the end of
the burst access.
As with standard DDR SDRAMs, the pipelined, multibank
architecture of DDR2 SDRAMs allows for concurrent
operation, thereby providing high, effective bandwidth by
hiding row precharge and activation time.
The 4.8Gb DDR2 SDRAM uses a double-data-rate
architecture to achieve high-speed operation. The
double data rate architecture is essentially a 4n-prefetch
architecture, with an interface designed to transfer
two data words per clock cycle at the I/O balls. A
single read or write access for the x72 DDR2 SDRAM
effectively consists of a single 4n-bit-wide, one-clockcycle data transfer at the internal DRAM core and four
corresponding n-bit-wide, one-half-clock-cycle data
transfers at the I/O balls.
A self refresh mode is provided, along with a powersaving power-down mode.
All inputs are compatible with the JEDEC standard for
SSTL_18. All full drive-strength outputs are SSTL_18compatible.
GENERAL NOTES
• The functionality and the timing specifications
discussed in this data sheet are for the DLLenabled
mode of operation.
• Throughout the data sheet, the various figures and
text refer to DQs as ¡°DQ.¡± The DQ term is to be
interpreted as any and all DQ collectively, unless
specifically stated otherwise. Additionally, each chip
is divided into 2 bytes, the lower byte and upper
byte. For the lower byte (DQ0¨CDQ7), DM refers to
LDM and DQS refers to LDQS. For the upper byte
(DQ8¨CDQ15), DM refers to UDM and DQS refers to
UDQS.
• Complete functionality is described throughout
the document and any page or diagram may have
been simplified to convey a topic and may not be
inclusive of all requirements.
• Any specific requirement takes precedence over a
general statement.
A bidirectional data strobe (DQS, DQS#) is transmitted
externally, along with data, for use in data capture at the
receiver. DQS is a strobe transmitted by the DDR2
SDRAM during READs and by the memory controller
during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs. There
are strobes, one for the lower byte (LDQS, LDQS#) and
one for the upper byte (UDQS, UDQS#).
The MCP DDR2 SDRAM operates from a differential
clock (CK and CK#); the crossing of CK going HIGH
and CK# going LOW will be referred to as the positive
edge of CK. Commands (address and control signals)
are registered at every positive edge of CK. Input data
is registered on both edges of DQS, and output data
is referenced to both edges of DQS, as well as to both
edges of CK.
Read and write accesses to the DDR2 SDRAM are
burst oriented; accesses start at a selected location
and continue for a programmed number of locations
in a programmed sequence. Accesses begin with the
registration of an ACTIVE command, which is then
followed by a READ or WRITE command. The address
bits registered coincident with the ACTIVE command
are used to select the bank and row to be accessed.
The address bits registered coincident with the READ
or WRITE command are used to select the bank and the
starting column location for the burst access.
INITIALIZATION
DDR2 SDRAMs must be powered up and initialized
in a predefined manner. Operational procedures other
than those specified may result in undefined operation.
The following sequence is required for power up and
initialization and is shown in Figure 4 on page 5.
The DDR2 SDRAM provides for programmable read
or write burst lengths of four or eight locations. DDR2
SDRAM supports interrupting a burst read of eight with
another read, or a burst write of eight with another
write.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
4
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
FIGURE 4 - POWER-UP AND INITIALIZATION
Notes appear on page 7
VDD
VDDL
VDDQ
tVTD1
VTT1
VREF
T0
tCK
Ta0
Tb0
Tc0
Td0
Te0
Tf0
Tg0
Th0
Ti0
Tj0
Tk0
Tl0
Tm0
NOP4
PRE
LM5
LM6
LM7
LM8
PRE9
REF10
REF
LM11
LM12
LM13
Valid16
A10 = 1
Code
Code
Code
Code
A10 = 1
Code
Code
Code
Valid
CK#
CK
tCL
tCL
LVCMOS 2 SSTL_18
2
CKE LOW LEVEL LOW LEVEL
ODT
3
Command
15
DM
3
Address
15
DQS
High-Z
15
High-Z
RTT
High-Z
DQ
T = 200µs (MIN)
Power-up:
VDD and stable
clock (CK, CK#)
T = 400ns
(MIN)16
tMRD
tRPA
tMRD
tMRD
tMRD
tRPA
tRFC
tRFC
tMRD
tMRD
tMRD
See note 17
EMR(2)
EMR(3)
EMR
MR without
DLL RESET
MR with
DLL RESET
EMR with
OCD default
EMR with
OCD exit
200 cycles of CK are required before a READ command can be issued.
Indicates a break in
time scale
AS4DDR264M72PBG1
Rev. 3.1 01/10
Normal
operation
Don’t care
Micross Components reserves the right to change products or specifications without notice.
5
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
NOTES:
1. Applying power; if CKE is maintained below 0.2 x VCC, outputs
remain disabled. To guarantee RTT (ODT resistance) is off,
VREF
must be valid and a low level must be applied to the ODT ball (all
other inputs may be undefined, I/Os and outputs must be less
than VCC during voltage ramp time to avoid DDR2 SDRAM
device
latch-up). VTT is not applied directly to the device; however,
tVTD should be ³0 to avoid device latch-up. At least one of the
following two sets of conditions (A or B) must be met to obtain a
stable supply state (stable supply defined as VCC, VREF,
and VTT are between their minimum and maximum values as
stated in DC Operating Conditions table):
6. Issue a LOAD MODE command to the EMR(3). To issue an EMR(3)
command, provide HIGH to BA0 and BA1; remaining EMR(3) bits
must be “0.” See “Extended Mode Register 3 (EMR 3)” on page 13
for all EMR(3) requirements.
7. Issue a LOAD MODE command to the EMR to enable DLL. To issue
a DLL ENABLE command, provide LOW to BA1 and A0; provide
HIGH to BA0; bits E7, E8, and E9 can be set to “0” or “1;” Austin
recommends setting them to “0;” remaining EMR bits must be “0.
”See “Extended Mode Register (EMR)” on page 10 for all EMR
requirements.
8. Issue a LOAD MODE command to the MR for DLL RESET. 200
cycles of clock input is required to lock the DLL. To issue a DLL
RESET, provide HIGH to A8 and provide LOW to BA1 and BA0;
CKE must be HIGH the entire time the DLL is resetting; remaining
MR bits must be “0.” See “Mode Register (MR)” on page 7 for all
MR requirements.
9. Issue PRECHARGE ALL command.
10. Issue two or more REFRESH commands.
11. Issue a LOAD MODE command to the MR with LOW to A8 to
initialize device operation (that is, to program operating parameters
without resetting the DLL). To access the MR, set BA0 and BA1
LOW; remaining MR bits must be set to desired settings. See
“Mode Register (MR)” on page 7 for all MR requirements.
12. Issue a LOAD MODE command to the EMR to enable OCD
default by setting bits E7, E8, and E9 to “1,” and then setting all
other desired parameters. To access the EMR, set BA0 LOW
and BA1 HIGH (see “Extended Mode Register (EMR)” on page 10
for all EMR requirements).
13. Issue a LOAD MODE command to the EMR to enable OCD exit by
setting bits E7, E8, and E9 to “0,” and then setting all other desired
parameters. To access the extended mode registers, EMR, set
BA0 LOW and BA1 HIGH for all EMR requirements.
14. The DDR2 SDRAM is now initialized and ready for normal
operation 200 clock cycles after the DLL RESET at Tf0.
15. DM represents UDM, LDM collectively for each die x16
configuration. DQS represents UDQS, USQS, LDQS, LDQS for
each die x16 configuration. DQ represents DQ0-DQ15 for each
die x16 configuration.
16. Wait a minimum of 400ns then issue a PRECHARGE ALL
command.
A. (single power source) The VCC voltage ramp from 300mV to
VCC(MIN) must take no longer than 200ms.
• All VCC are driven from a single power converter output
• VTT is limited to 0.95V MAX
• VREF tracks VCC/2; VREF must be within ±0.3V with respect
to VCC/2 during supply ramp time.
• VCC > VREF at all times
2. CKE requires LVCMOS input levels prior to state T0 to ensure
DQs are High-Z during device power-up prior to VREF being
stable. After state T0, CKE is required to have SSTL_18 input
levels. Once CKE transitions to a high level, it must stay HIGH for
the duration of the initialization sequence.
3. A10 = PRECHARGE ALL, CODE = desired values for mode
registers (bank addresses are required to be decoded).
4. For a minimum of 200μs after stable power and clock (CK, CK#),
apply NOP or DESELECT commands, then take CKE HIGH.
5. Issue a LOAD MODE command to the EMR(2). To issue an EMR(2)
command, provide LOW to BA0, and provide HIGH to BA1; set
register E7 to “0” or “1” to select appropriate self refresh rate;
remaining EMR(2) bits must be “0” (see “Extended Mode Register
2 (EMR2)” on page 84 for all EMR(2) requirements).
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
6
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
MODE REGISTER (MR)
FIGURE 5 – MODE REGISTER (MR) DEFINITION
The mode register is used to define the specific mode of
operation of the DDR2 SDRAM. This definition includes the
selection of a burst length, burst type, CL, operating mode,
DLL RESET, write recovery, and power-down mode, as
shown in Figure 5. Contents of the mode register can be
altered by re-executing the LOAD MODE (LM) command. If
the user chooses to modify only a subset of the MR variables,
all variables (M0–M14) must be programmed when the
command is issued.
21
12
BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
16 15 14 n 12 11 10
0
MR
WR
01 PD
9
8
1
Slow exit
(low power)
M11 M10 M9
The LM command can only be issued (or reissued) when all
banks are in the precharged state (idle state) and no bursts
are in progress. The controller must wait the specified time
tMRD before initiating any subsequent operations such as
an ACTIVE command. Violating either of these requirements
will result in unspecified operation.
BURST LENGTH
M15 M16
Burst length is defined by bits M0–M3, as shown in Figure
5. Read and write accesses to the DDR2 SDRAM are burstoriented, with the burst length being programmable to either
four or eight. The burst length determines the maximum
number of column locations that can be accessed for a given
READ or WRITE command.
6
5
4
3
2
1
0
Mode Register (Mx)
DLL TM CAS# Latency BT Burst Length
M2 M1 M0 Burst Length
M7 Mode
M12 PD Mode
0
Fast exit
(normal)
The mode register is programmed via the LM command
(bits BA2–BA0 = 0, 0,0) and other bits (M13–M0) will retain
the stored information until it is programmed again or the
device loses power (except for bit M8, which is selfclearing).
Reprogramming the mode register will not alter the contents
of the memory array, provided it is performed correctly.
7
Address Bus
0 Normal
0
0
0
Reserved
1
0
0
1
Reserved
0
1
0
4
0
1
1
8
Test
M8 DLL Reset
0
No
1
0
0
Reserved
1
Yes
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
Write Recovery
0
0
0
Reserved
0
0
1
2
M3
0
1
0
3
0
Sequential
0
1
1
4
1
Interleaved
1
0
0
5
1
0
1
6
1
1
0
7
1
1
1
8
Mode Register Definition
0
0
Mode register (MR)
0
1
Extended mode register (EMR)
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
M6 M5 M4
Burst Type
CAS Latency (CL)
0
0
0
Reserved
0
0
1
Reserved
0
1
0
Reserved
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
6
1
1
1
7
Notes:
1.A13 Not used on this part, and must be programmed to ‘0’ on
this part.
2.BA2 must be programmed to “0” and is reserved for future use.
When a READ or WRITE command is issued, a block of
columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning
that the burst will wrap within the block if a boundary is reached.
The block is uniquely selected by A2–Ai when BL = 4 and by
A3–Ai when BL = 8 (where Ai is the most significant column
address bit for a given configuration). The remaining (least
significant) address bit(s) is (are) used to select the starting
location within the block. The programmed burst length applies
to both READ and WRITE bursts.
BURST TYPE
Accesses within a given burst may be programmed to be
either sequential or interleaved. The burst type is selected
via bit M3, as shown in Figure 5. The ordering of accesses
within a burst is determined by the burst length, the burst
type, and the starting column address, as shown in Table
2. DDR2 SDRAM supports 4-bit burst mode and 8-bit burst
mode only. For 8-bit burst mode, full interleave address
ordering is supported; however, sequential address ordering
is nibble-based.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
7
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
TABLE 2 - BURST DEFINITION
Burst
Length
Type = Sequential
Type = Interleaved
DLL RESET is defined by bit M8, as shown in Figure 5.
Programming bit M8 to “1” will activate the DLL RESET
function. Bit M8 is self-clearing, meaning it returns back
to a value of “0” after the DLL RESET function has been
issued.
A1
A0
0
0
0-1-2-3
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
1
3-0-1-2
3-2-1-0
A2
A1
A0
0
0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
WRITE RECOVERY
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Write recovery (WR) time is defined by bits M9-M11, as shown
in Figure 5. The WR register is used by the DDR2 SDRAM
during WRITE with auto precharge operation. During WRITE
with auto precharge operation, the DDR2 SDRAM delays the
internal auto precharge operation by WR clocks (programmed
in bits M9-M11) from the last data burst.
4
8
DLL RESET
Order of Accesses Within a Burst
Starting Column
Address
Anytime the DLL RESET function is used, 200 clock cycles
must occur before a READ command can be issued to allow
time for the internal clock to be synchronized with the external
clock. Failing to wait for synchronization to occur may result in
a violation of the tAC or tDQSCK parameters.
NOTES:
1. For a burst length of two, A1-Ai select two-data-element block;
A0 selects the starting column within the block.
2. For a burst length of four, A2-Ai select four-data-element block;
A0-1 select the starting column within the block.
3. For a burst length of eight, A3-Ai select eight-data-element block;
A0-2 select the starting column within the block.
4. Whenever a boundary of the block is reached within a given
sequence above, the following access wraps within the block.
WR values of 2, 3, 4, 5, 6 or 7 clocks may be used for
programming bits M9-M11. The user is required to program
the value of WR, which is calculated by dividing tWR (in ns)
by tCK (in ns) and rounding up a non integer value to the next
integer; WR [cycles] = tWR [ns] / tCK [ns]. Reserved states
should not be used as unknown operation or incompatibility
with future versions may result.
OPERATING MODE
The normal operating mode is selected by issuing a
command with bit M7 set to “0” and all other bits set to
the desired values, as shown in Figure 5. When bit M7 is
“1,” no other bits of the mode register are programmed.
Programming bit M7 to “1” places the DDR2 SDRAM into a
test mode that is only used by the manufacturer and should
not be used. No operation or functionality is guaranteed
if M7 bit is “1.”
POWER-DOWN MODE
Active power-down (PD) mode is defined by bit M12,
as shown in Figure 5. PD mode allows the user to
determine the active power-down mode, which determines
performance versus power savings. PD mode bit M12 does
not apply to precharge PD mode.
When bit M12 = 0, standard active PD mode or “fast-exit”
active PD mode is enabled. The tXARD parameter is used
for fast-exit active PD exit timing. The DLL is expected to be
enabled and running during this mode.
When bit M12 = 1, a lower-power active PD mode or “slowexit”
active PD mode is enabled. The tXARD parameter is used
for slow-exit active PD exit timing. The DLL can be enabled,
but “frozen” during active PD mode since the exit-to-READ
command timing is relaxed. The power difference expected
between PD normal and PD low-power mode is defined in
the ICC table.
AS4DDR264M72PBG1
Rev. 3.1 01/10
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8
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AS4DDR264M72PBG1
CAS LATENCY (CL)
The CAS latency (CL) is defined by bits M4-M6, as shown
in Figure 5. CL is the delay, in clock cycles, between the
registration of a READ command and the availability of the first
bit of output data. The CL can be set to 3, 4, 5, 6 or 7 clocks,
depending on the speed grade option being used.
DDR2 SDRAM also supports a feature called posted CAS
additive latency (AL). This feature allows the READ command
to be issued prior to tRCD (MIN) by delaying the
internal command to the DDR2 SDRAM by AL clocks.
DDR2 SDRAM does not support any half-clock latencies.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
Examples of CL = 3 and CL = 4 are shown in Figure 6; both
assume AL = 0. If a READ command is registered at clock
edge n, and the CL is m clocks, the data will be available
nominally coincident with clock edge n+m (this assumes
AL = 0).
FIGURE 6 - CAS LATENCY (CL)
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
CL = 3 (AL = 0)
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
CL = 4 (AL = 0)
Transitioning data
Notes:
Don’t care
1. BL = 4.
2. Posted CAS# additive latency (AL) = 0.
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
Extended Mode Register (EMR)
AS4DDR264M72PBG1
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AS4DDR264M72PBG1
EXTENDED MODE REGISTER (EMR)
until it is programmed again or the device loses power.
Reprogramming the EMR will not alter the contents of the memory
array, provided it is performed correctly.
The extended mode register controls functions beyond those
controlled by the mode register; these additional functions are
DLL enable/disable, output drive strength, on die termination
(ODT) (RTT), posted AL, off-chip driver impedance calibration
(OCD), DQS# enable/disable, RDQS/RDQS# enable/disable,
and output disable/enable. These functions are controlled via the
bits shown in Figure 7. The EMR is programmed via the LOAD
MODE (LM) command and will retain the stored information
The EMR must be loaded when all banks are idle and no bursts
are in progress, and the controller must wait the specified time
tMRD before initiating any subsequent operation. Violating either
of these requirements could esult in unspecified operation.
FIGURE 7 – EXTENDED MODE REGISTER DEFINITION
1
2
BA23 BA1 BA0 An2 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
16
0
A1 A0
8 7 6 5 4 3 2
1 0
15 14 n 12 11 10 9
MRS 02 Out RDQS DQS# OCD Program RTT Posted CAS# RTT ODS DLL
Address bus
Extended mode
register (Ex)
E12
Outputs
E0
DLL Enable
0
Enabled
E6 E2 RTT (Nominal)
0
Enable (normal)
1
Disabled
0 0
RTT disabled
1
Disable (test/debug)
0 1
75:
1 0
150:
E1
1 1
50:
0
E11 RDQS Enable
0
No
1
Yes
1
Full(100%)
Reduced(40-60%)
4
E5 E4 E3 Posted CAS# Additive Latency (AL)
E10 DQS# Enable
0
Enable
0
0
0
0
1
Disable
0
0
1
1
0
1
0
2
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
6
1
1
1
Reserved
E9 E8 E7 OCD Operation
E15 E14
Output Drive Strength
0
0
0
OCD exit
0
0
1
Reserved
0
1
0
Reserved
1
0
0
Reserved
1
1
1
Enable OCD defaults
Mode Register Set
0
0
Mode register (MR)
0
1
Extended mode register (EMR)
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
Notes:
1.During initialization, all three bits must be set to “1” for OCD default state, then must be set to “0” before
initialization is finished, as detailed in the initialization procedure.
2.E13 (A13) must be programmed to “0” and is reserved for future use.
3.E16 must be programmed to “0” and is reserved for future use.
4.Not all AL options are supported in any individual speed grade.
AS4DDR264M72PBG1
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AS4DDR264M72PBG1
OUTPUT ENABLE/DISABLE
DLL ENABLE/DISABLE
The DLL may be enabled or disabled by programming bit
E0 during the LM command, as shown in Figure 7. The DLL
must be enabled for normal operation. DLL enable is required
during power-up initialization and upon returning to normal
operation after having disabled the DLL for the purpose of
debugging or evaluation. Enabling the DLL should always be
followed by resetting the DLL using an LM command.
The OUTPUT ENABLE function is defined by bit E12, as shown
in Figure 7. When enabled (E12 = 0), all outputs (DQs, DQS,
DQS#, RDQS, RDQS#) function normally. When disabled (E12
= 1), all DDR2 SDRAM outputs (DQs, DQS, DQS#, RDQS,
RDQS#) are disabled, thus removing output buffer current.
The output disable feature is intended to be used during ICC
characterization of read current.
The DLL is automatically disabled when entering SELF
REFRESH operation and is automatically re-enabled and reset
upon exit of SELF REFRESH operation. Any time the DLL is
enabled (and subsequently reset), 200 clock cycles must occur
before a READ command can be issued, to allow time for the
internal clock to synchronize with the external clock. Failing to
wait for synchronization to occur may result in a violation of
the tAC or tDQSCK parameters.
ON-DIE TERMINATION (ODT)
ODT effective resistance, RTT (EFF), is defined by bits E2
and E6 of the EMR, as shown in Figure 7. The ODT feature
is designed to improve signal integrity of the memory channel
by allowing the DDR2 SDRAM controller to independently
turn on/off ODT for any or all devices. RTT effective resistance
values of 50Ω, 75Ω, and 150Ω are selectable and apply
to each DQ, DQS/DQS#, RDQS/ RDQS#, UDQS/UDQS#,
LDQS/LDQS#, DM, and UDM/ LDM signals. Bits (E6, E2)
determine what ODT resistance is enabled by turning on/off
“sw1,” “sw2,” or “sw3.” The ODT effective resistance value is
elected by enabling switch “sw1,” which enables all R1 values
that are 150Ω each, enabling an effective resistance of 75Ω
(RTT2(EFF) = R2/2). Similarly, if “sw2” is enabled, all R2 values
that are 300Ω each, enable an effective ODT resistance of
150Ω (RTT2(EFF) = R2/2). Switch “sw3” enables R1 values
of 100Ω enabling effective resistance of 50Ω Reserved states
should not be used, as unknown operation or incompatibility
with future versions may result.
OUTPUT DRIVE STRENGTH
The output drive strength is defined by bit E1, as shown
in Figure 7. The normal drive strength for all outputs are
specified to be SSTL_18. Programming bit E1 = 0 selects
normal (full strength) drive strength for all outputs. Selecting
a reduced drive strength option (E1 = 1) will reduce all outputs
to approximately 45-60 percent of the SSTL_18 drive strength.
This option is intended for the support of lighter load and/or
point-to-point environments.
DQS# ENABLE/DISABLE
The ODT control ball is used to determine when RTT(EFF)
is turned on and off, assuming ODT has been enabled via
bits E2 and E6 of the EMR. The ODT feature and ODT input
ball are only used during active, active power-down (both
fast-exit and slow-exit modes), and precharge powerdown
modes of operation. ODT must be turned off prior to entering
self refresh. During power-up and initialization of the DDR2
SDRAM, ODT should be disabled until issuing the EMR
command to enable the ODT feature, at which point the ODT
ball will determine the RTT(EFF) value. Any time the EMR
enables the ODT function, ODT may not be driven HIGH until
eight clocks after the EMR has been enabled. See “ODT Timing”
section for ODT timing diagrams.
The DQS# ball is enabled by bit E10. When E10 = 0, DQS# is
the complement of the differential data strobe pair DQS/DQS#.
When disabled (E10 = 1), DQS is used in a single ended mode
and the DQS# ball is disabled. When disabled, DQS# should
be left floating. This function is also used to enable/disable
RDQS#. If RDQS is enabled (E11 = 1) and DQS# is enabled
(E10 = 0), then both DQS# and RDQS# will be enabled.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
11
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4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
POSTED CAS ADDITIVE LATENCY (AL)
Posted CAS additive latency (AL) is supported to make the
command and data bus efficient for sustainable bandwidths in
DDR2 SDRAM. Bits E3–E5 define the value of AL, as shown
in Figure 7. Bits E3–E5 allow the user to program the DDR2
SDRAM with an inverse AL of 0, 1, 2, 3, 4, 5 or 6 clocks.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
In this operation, the DDR2 SDRAM allows a READ or WRITE
command to be issued prior to tRCD (MIN) with the requirement
that AL = tRCD (MIN). A typical application using this feature
would set AL = tRCD (MIN) - 1x tCK. The READ or WRITE
command is held for the time of the AL before it is issued internally
to the DDR2 SDRAM device. RL is controlled by the sum of AL
and CL; RL = AL+CL. Write latency (WL) is equal to RL minus
one clock; WL = AL + CL - 1 x tCK.
FIGURE 8 - EXTENDED MODE REGISTER 2 (EMR2) DEFINITION
1
2
BA2 BA1 BA0 An1 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
16
0
E15 E14
15 14 n
MRS 0
12 11
0 0
10 9 8 7 6
0 0 SRT 0
0
5 4 3 2
0 0 0 0
A1 A0
1
0
0
0
Mode Register Set
E7
SRT Enable
1X refresh rate (0°C to 85°C)
2X refresh rate (>85°C)
0
0
Mode register (MR)
0
0
1
Extended mode register (EMR)
1
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
Address bus
Extended mode
register (Ex)
Notes:
1.E16 bit (BA2) must be programmed to “0” and is reserved for future use.
2.Mode bits (En) with corresponding address balls (An) greater than A12 are reserved for future use and must be programmed to “0.”
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
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AS4DDR264M72PBG1
FIGURE 9 - EXTENDED MODE REGISTER 3 (EMR3) DEFINITION
1
2
BA22 BA1 BA0 An1 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
16
15 14 n
12 11
10
0
MRS
0
0
E15 E14
0
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
A1 A0
1
0
0
0
Address bus
Extended mode
register (Ex)
Mode Register Set
0
0
0
1
Extended mode register (EMR)
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
Mode register (MR)
Notes:
Notes:
E16 (BA2)address
is onlyballs
applicable
for
densities
>1Gb, for
is reserved
formust
future
use, and must
1.Mode bits
(En) with1.corresponding
(An) greater
than
A12 are reserved
future use and
be programmed
to “0.”
2.E16 (BA2) must be programmed to “0” on this device and is reserved for future use.
be pro-
EXTENDED MODE REGISTER 2
The extended mode register 2 (EMR2) controls functions
beyond those controlled by the mode register. Currently all
bits in EMR2 are reserved, as shown in Figure 8. The EMR2
is programmed via the LM command and will retain the stored
information until it is programmed again or the device loses
power. Reprogramming the EMR will not alter the contents of
the memory array, provided it is performed correctly.
EMR3 must be loaded when all banks are idle and no bursts
are in progress, and the controller must wait the specifi ed time
tMRD before initiating any subsequent operation. Violating
either of these requirements could result in unspecified
operation.
COMMAND TRUTH TABLES
The following tables provide a quick reference of DDR2 SDRAM
available commands, including CKE power-down modes, and
bank-to-bank commands.
EMR2 must be loaded when all banks are idle and no bursts are
in progress, and the controller must wait the specified time tMRD
before initiating any subsequent operation. Violating either of
these requirements could result in unspecified operation.
EXTENDED MODE REGISTER 3
The extended mode register 3 (EMR3) controls functions
beyond those controlled by the mode register. Currently, all
bits in EMR3 are reserved, as shown in Figure 9. The EMR3
is programmed via the LM command and will retain the stored
information until it is programmed again or the device loses
power. Reprogramming the EMR will not alter the contents of
the memory array, provided it is performed correctly.
AS4DDR264M72PBG1
Rev. 3.1 01/10
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AS4DDR264M72PBG1
TABLE 3 - TRUTH TABLE - DDR2 COMMANDS
CKE
Function
RAS#
CAS#
WE#
BA2 thru
Previous
Cycle
Current
Cycle
CS#
LOAD MODE
H
H
L
L
L
L
BA
REFRESH
H
H
L
L
L
H
X
X
X
X
SELF-REFRESH Entry
H
L
X
X
X
X
X
X
X
X
7
2
BA0
L
L
L
H
H
X
X
X
L
H
H
H
A12
A11
A10
A9-A0
OP CODE
Notes
2
SELF-REFRESH exit
L
H
Single Bank Precharge
H
H
L
L
H
L
X
X
L
X
All banks PRECHARGE
H
H
L
L
H
L
X
X
H
X
Bank Activate
H
H
L
L
H
L
BA
ROW ADDRESS
Column
Address
Column
Address
Column
Address
Column
Address
L
Column
Address
Column
Address
Column
Address
Column
Address
2,3
WRITE
H
H
L
L
H
L
BA
WRITE with auto precharge
H
H
L
H
L
L
BA
READ
H
H
L
H
L
H
BA
READ with auto precharge
H
H
L
H
L
H
BA
NO OPERATION
H
X
L
H
H
H
X
X
X
X
Device DESELECT
H
X
H
X
X
X
X
X
X
X
H
X
X
X
L
H
H
H
X
X
X
X
4
X
X
X
X
4
POWER-DOWN entry
H
L
POWER-DOWN exit
L
H
H
X
X
X
L
H
H
H
H
L
L
2,3
2,3
2,3
Note: 1. All DDR2-SDRAM commands are defined by staes of CS#, RAS#, CAS#, WE#, and CKE a the
rising edge of the clock.
2. Bank addresses (BA) BA2-BA0 determine which bank is to be operated upon. BA during a LM
command selects which mode register is programmed.
3. Burst reads or writes at BL=4 cannot be terminated or interrupted.
4. The power down mode does not perform any REFRESH operations. The duration of power down
is therefore limited by the refresh requirements outlined in the AC parametric section.
5. The state of ODT does not effect the states described in this table. The ODT function is not available
during self refresh. See “On Die Termination (ODT)” for details.
6. “X” means “H or L” (but a defined logic level)
7. Self refresh exit is asynchronous.
AS4DDR264M72PBG1
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AS4DDR264M72PBG1
DESELECT
The DESELECT function (CS# HIGH) prevents new commands
from being executed by the DDR2 SDRAM. The DDR2 SDRAM
is effectively deselected. Operations already in progress are
not affected.
A subsequent ACTIVE command to a different row in the
same bank can only be issued after the previous active row
has been closed (precharged). The minimum time interval
between successive ACTIVE commands to the same bank is
defined by tRC
NO OPERATION (NOP)
A subsequent ACTIVE command to another bank can be
issued while the first bank is being accessed, which results in
a reduction of total row-access overhead. The minimum time
interval between successive ACTIVE commands to different
banks is defined by tRRD.
The NO OPERATION (NOP) command is used to instruct the
selected DDR2 SDRAM to perform a NOP (CS# is LOW; RAS#,
CAS#, and WE are HIGH). This prevents unwanted commands
from being registered during idle or wait states. Operations
already in progress are not affected.
LOAD MODE (LM)
The mode registers are loaded via inputs BA2–BA0, and
A12–A0. BA2–BA0 determine which mode register will be
programmed. See “Mode Register (MR)”. The LM command
can only be issued when all banks are idle, and a subsequent
execute able command cannot be issued until tMRD is met.
FIGURE 10 - ACTIVE COMMAND
CK#
BANK/ROW ACTIVATION
ACTIVE COMMAND
CK
The ACTIVE command is used to open (or activate) a row in
a particular bank for a subsequent access. The value on the
BA2–BA0 inputs selects the bank, and the address provided
on inputs A12–A0 selects the row. This row remains active (or
open) for accesses until a PRECHARGE command is issued
to that bank. A PRECHARGE command must be issued before
opening a different row in the same bank.
CKE
CS#
RAS#
CAS#
ACTIVE OPERATION
Before any READ or WRITE commands can be issued to a
bank within the DDR2 SDRAM, a row in that bank must be
opened (activated), even when additive latency is used. This
is accomplished via the ACTIVE command, which selects both
the bank and the row to be activated.
WE#
After a row is opened with an ACTIVE command, a READ or
WRITE command may be issued to that row, subject to the
tRCD specification. tRCD (MIN) should be divided by the clock
period and rounded up to the next whole number to determine
the earliest clock edge after the ACTIVE command on which
a READ or WRITE command can be entered. The same
procedure is used to convert other specification limits from time
units to clock cycles. For example, a tRCD (MIN) specification
of 20ns with a 266 MHz clock (tCK = 3.75ns) results in 5.3
clocks, rounded up to 6.
AS4DDR264M72PBG1
Rev. 3.1 01/10
ADDRESS
Row
BANK ADDRESS
Bank
DON’T CARE
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AS4DDR264M72PBG1
READ COMMAND
The READ command is used to initiate a burst read access
to an active row. The value on the BA2–BA0 inputs selects
the bank, and the address provided on inputs A0–i (where
i = A9) selects the starting column location. The value on
input A10 determines whether or not auto precharge is used.
If auto precharge is selected, the row being accessed will be
precharged at the end of the READ burst; if auto precharge
is not selected, the row will remain open for subsequent
accesses.
FIGURE 11 - READ COMMAND
READ OPERATION
READ bursts are initiated with a READ command. The starting
column and bank addresses are provided with the READ
command and auto precharge is either enabled or disabled for
that burst access. If auto precharge is enabled, the row being
accessed is automatically precharged at the completion of the
burst. If auto precharge is disabled, the row will be left open
after the completion of the burst.
CK#
CK
CKE
CS#
During READ bursts, the valid data-out element from the
starting column address will be available READ latency (RL)
clocks later. RL is defined as the sum of AL and CL; RL = AL
+ CL. The value for AL and CL are programmable via the MR
and EMR commands, respectively. Each subsequent data-out
element will be valid nominally at the next positive or negative
clock edge (i.e., at the next crossing of CK and CK#).
RAS#
CAS#
WE#
DQS/DQS# is driven by the DDR2 SDRAM along with output
data. The initial LOW state on DQS and HIGH state on DQS#
is known as the read preamble (tRPRE). The LOW state on
DQS and HIGH state on DQS# coincident with the last data-out
element is known as the read postamble (tRPST).
ADDRESS
ENABLE
AUTO PRECHARGE
A10
DISABLE
Upon completion of a burst, assuming no other commands
have been initiated, the DQ will go High-Z.
BANK ADDRESS
Data from any READ burst may be concatenated with data from
a subsequent READ command to provide a continuous flow
of data. The first data element from the new burst follows the
last element of a completed burst. The new READ command
should be issued x cycles after the first READ command, where
x equals BL / 2 cycles.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Col
Bank
DON’T CARE
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AS4DDR264M72PBG1
WRITE COMMAND
The WRITE command is used to initiate a burst write access
to an active row. The value on the BA2–BA0 inputs selects the
bank, and the address provided on inputs A0–9 selects the
starting column location. The value on input A10 determines
whether or not auto precharge is used. If auto precharge is
selected, the row being accessed will be precharged at the
end of the WRITE burst; if auto precharge is not selected, the
row will remain open for subsequent accesses.
The time between the WRITE command and the fi rst rising
DQS edge is WL ± tDQSS. Subsequent DQS positive rising
edges are timed, relative to the associated clock edge, as ±
tDQSS. tDQSS is specified with a relatively wide range (25
percent of one clock cycle). All of the WRITE diagrams show
the nominal case, and where the two extreme cases (tDQSS
[MIN] and tDQSS [MAX]) might not be intuitive, they have also
been included. Upon completion of a burst, assuming no other
commands have been initiated, the DQ will remain High-Z and
any additional input data will be ignored.
Input data appearing on the DQ is written to the memory array
subject to the DM input logic level appearing coincident with the
data. If a given DM signal is registered LOW, the corresponding
data will be written to memory; if the DM signal is registered
HIGH, the corresponding data inputs will be ignored, and a
WRITE will not be executed to that byte/column location.
Data for any WRITE burst may be concatenated with a
subsequent WRITE command to provide continuous flow of
input data. The fi rst data element from the new burst is applied
after the last element of a completed burst. The new WRITE
command should be issued x cycles after the first WRITE
command, where x equals BL/2.
WRITE OPERATION
WRITE bursts are initiated with a WRITE command, as shown
in Figure 12. DDR2 SDRAM uses WL equal to RL minus one
clock cycle [WL = RL - 1CK = AL + (CL - 1CK)]. The starting
column and bank addresses are provided with the WRITE
command, and auto precharge is either enabled or disabled
for that access. If auto precharge is enabled, the row being
accessed is precharged at the completion of the burst. For the
generic WRITE commands used in the following illustrations,
auto precharge is disabled.
DDR2 SDRAM supports concurrent auto precharge options,
as shown in Table 4.
DDR2 SDRAM does not allow interrupting or truncating any
WRITE burst using BL = 4 operation. Once the BL = 4 WRITE
command is registered, it must be allowed to complete the
entire WRITE burst cycle. However, a WRITE (with auto
precharge disabled) using BL = 8 operation might be interrupted
and truncated ONLY by another WRITE burst as long as the
interruption occurs on a 4-bit boundary, due to the 4n prefetch
architecture of DDR2 SDRAM. WRITE burst BL = 8 operations
may not to be interrupted or truncated with any command
except another WRITE command.
During WRITE bursts, the first valid data-in element will be
registered on the first rising edge of DQS following the WRITE
command, and subsequent data elements will be registered on
successive edges of DQS. The LOW state on DQS between
the WRITE command and the first rising edge is known as the
write preamble; the LOW state on DQS following the last data-in
element is known as the write postamble.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Data for any WRITE burst may be followed by a subsequent
READ command. The number of clock cycles required to meet
tWTR is either 2 or tWTR/tCK, whichever is greater. Data for any
WRITE burst may be followed by a subsequent PRECHARGE
command. tWT starts at the end of the data burst, regardless
of the data mask condition.
Micross Components reserves the right to change products or specifications without notice.
17
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
FIGURE 12 - WRITE COMMAND
CK#
CK
CKE
HIGH
CS#
RAS#
CAS#
WE#
CA
ADDRESS
EN AP
A10
DIS AP
BANK ADDRESS
BA
DON’T CARE
Note: CA = column address; BA = bank address; EN AP = enable auto precharge; and
DIS AP = disable auto precharge.
TABLE 4 - WRITE USING CONCURRENT AUTO PRECHARGE
From Command (Bank n )
WRITE with Auto Precharge
AS4DDR264M72PBG1
Rev. 3.1 01/10
Minimum Delay (With Concurrent
Auto Precharge)
(CL-1) + (BL/2) + tWTR
READ OR READ w/ AP
WRITE OR WRITE w/ AP
(BL/2)
PRECHARGE or ACTIVE
1
To Command (Bank m )
Units
t
CK
CK
t
CK
t
Micross Components reserves the right to change products or specifications without notice.
18
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
PRECHARGE COMMAND
The PRECHARGE command, illustrated in Figure 13, is used
to deactivate the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a subsequent
row activation a specified time (tRP) after the PRECHARGE
command is issued, except in the case of concurrent auto
precharge, where a READ or WRITE command to a different
bank is allowed as long as it does not interrupt the data
transfer in the current bank and does not violate any other
timing parameters. Once a bank has been precharged, it is
in the idle state and must be activated prior to any READ or
WRITE commands being issued to that bank. A PRECHARGE
command is allowed if there is no open row in that bank (idle
state) or if the previously open row is already in the process of
precharging. However, the precharge period will be determined
by the last PRECHARGE command issued to the bank.
FIGURE 13 – PRECHARGE COMMAND
CK#
CK
CKE
HIGH
CS#
RAS#
CAS#
WE#
PRECHARGE OPERATION
Input A10 determines whether one or all banks are to be
precharged, and in the case where only one bank is to be
precharged, inputs BA2–BA0 select the bank. Otherwise
BA2–BA0 are treated as “Don’t Care.” When all banks are to
be precharged, inputs BA2–BA0 are treated as “Don’t Care.”
ADDRESS
ALL BANKS
A10
ONE BANK
Once a bank has been precharged, it is in the idle state and
must be activated prior to any READ or WRITE commands
being issued to that bank. tRPA timing applies when the
PRECHARGE (ALL) command is issued, regardless of the
number of banks already open or closed. If a single-bank
PRECHARGE command is issued, tRP timing applies.
BA2,- BA0
BA
DON’T CARE
Note: BA = bank address (if A10 is LOW; otherwise "Don't Care").
issued). The differential clock should remain stable and meet tCKE
specifications at least 1 x tCK after entering self refresh mode. All
The SELF REFRESH command can be used to retain data in command and address input signals except CKE are “Don’t Care”
the DDR2 SDRAM, even if the rest of the system is powered during self refresh.
down. When in the self refresh mode, the DDR2 SDRAM
retains data without external clocking. All power supply inputs The procedure for exiting self refresh requires a sequence of
(including VREF) must be maintained at valid levels upon entry/ commands. First, the differential clock must be stable and meet
tCK specifications at least 1 x tCK prior to CKE going back HIGH.
exit and during SELF REFRESH operation.
Once CKE is HIGH (tCLE(MIN) has been satisfied with four clock
The SELF REFRESH command is initiated like a registrations), the DDR2 SDRAM must have NOP or DESELECT
REFRESH command except CKE is LOW. The DLL is commands issued for tXSNR because time is required for the
automatically disabled upon entering self refresh and is completion of any internal refresh in progress. A simple algorithm
automatically enabled upon exiting self refresh (200 clock for meeting both refresh and DLL requirements is to apply NOP
cycles must then occur before a READ command can be or DESELECT commands for 200 clock cycles before applying
any other command.
SELF REFRESH COMMAND
Note: Self refresh not available at military temperature.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
19
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
RESET FUNCTION
(CKE LOW Anytime)
DDR2 SDRAM applications may go into a reset state anytime
during normal operation. If an application enters a reset
condition, CKE is used to ensure the DDR2 SDRAM device
resumes normal operation after reinitializing. All data will be
lost during a reset condition; however, the DDR2 SDRAM
device will continue to operate properly if the following
conditions outlined in this section are satisfied.
If CKE asynchronously drops LOW during any valid operation
(including a READ or WRITE burst), the memory controller
must satisfy the timing parameter tDELAY before turning off
the clocks. Stable clocks must exist at the CK, CK# inputs
of the DRAM before CKE is raised HIGH, at which time the
normal initialization sequence must occur. The DDR2 SDRAM
device is now ready for normal operation after the initialization
sequence.
The reset condition defined here assumes all supply voltages
(VDD, VDDQ and VREF) are stable and meet all DC specifications
prior to, during, and after the RESET operation. All other
input pins of the DDR2 SDRAM device are a “Don’t Care”
during RESET with the exception of CKE.
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
20
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
DC OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
VCC
MIN
TYP
MAX
Units
1.7
1.8
1.9
V
Notes
I/O Reference Voltage
VREF
0.49 x VCC
0.50 x VCC
0.51 x VCC
V
1
I/O Termination Voltag
VTT
VREF - 0.04
VREF
VREF + 0.04
V
2
1. VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ± 1 percent of the DC value. Peak-topeak AC noise on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the
nearest VREF bypass capacitor.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track
variations in the DC level of VREF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Min
Max
Unit
VCC
Voltage on VCC pin relative to V SS
-1.0
2.3
V
VIN, VOUT
Voltage on any pin relative to V SS
-0.5
2.3
TSTG
Storage Temperature
-55.0
125.0
TCASE
Device Operating Temperature
-55.0
125.0
Symbol
II
IOZ
IVREF
Input Leakage current; Any input 0V<VIN<VCC;
VREF = .5XVCC; Other balls not under test = 0V
V
C
o
o
C
ADDR, BAx
-10.0
10.0
uA
RAS\, CAS\, WE\, CS\,
CKE, DM, DQS, DQS\,
RDQS
-5
5
uA
CK, CK\
-5
5
uA
DM
-5
5
uA
OV ” VOUT ” VDD, DQ & ODT Disabled
-5
5
uA
VREF Leakage Current
-10
10
uA
INPUT / OUTPUT CAPACITANCE
TA = 25oC, f = 1 MHz, VCC = 1.8V
Parameter
Input capacitance (A0-A12, BA0-BA2, CS\, RAS\, CAS\, WE\, CKE, ODT)
Symbol
CADDR
Max
25
Unit
pF
Input capacitance CK, CK#
CIN2
8
pF
Input capacitance DM, DQS, DQS#
CIN3
10
pF
Input capacitance DQ0-71
COUT
12
pF
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
21
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
INPUT DC LOGIC LEVEL
All voltages referenced to Vss
Parameter
Input High (Logic 1) Voltage
Symbol
VIH (DC)
Min
VREF + 0.125
Max
VCC + 0.3001
Unit
V
Input Low (Logic 0) Voltage
VIL (DC)
-0.300
VREF - 0.125
V
Note 1: 300mV is allowed provided Vcc does not exceed 1.9V
INPUT AC LOGIC LEVEL
All voltages referenced to Vss
Parameter
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
Symbol
VIH (AC)
Min
VREF + 0.250
Max
VCC+0.3001
Unit
V
AC Input High (Logic 1) Voltage DDR2-667
VIH (AC)
VREF + 0.200
VCC+0.3001
V
ACInput Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL (AC)
-0.3
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL (AC)
-0.3
VREF - 0.200
V
Note 1: 300mV is allowed provided Vcc does not exceed 1.9V
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
22
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
DDRII ICC SPECIFICATIONS AND CONDITIONS
Parameter
Operating Current: One bank active-precharge
tCL=tCK(ICC), tRC=tRC(ICC), tRAS=tRAS MIN(ICC); CKE is
HIGH, CS\ is HIGH between valid commands; Address bus
switching, Data bus switching
Operating Current: One bank active-READ-precharge
current
IOUT=0ma; BL=4, CL=CL(ICC), AL=0; tCK = tCK(ICC), tRCtRC(ICC), tRAS=tRAS MIN(ICC), tRCD=tRCD(ICC); CKE is
HIGH, CS\ is HIGH between valid commands; Address bus is
switching; Data bus is switching
Precharge POWER-DOWN current
All banks idle; tCK-tCK(ICC); CKE is LOW; Other control and
address bus inputs are stable; Data bus inputs are floating
Symbol
667 MHZ
-3
533 MHZ
-38
400 MHZ
-5
Units
ICC0
660
600
550
mA
ICC1
750
650
600
mA
ICC2P
35
35
35
mA
ICC2Q
300
250
195
mA
ICC2N
330
275
220
mA
150
125
115
50
50
50
ICC3N
300
250
200
mA
ICC4W
850
700
600
mA
ICC4R
850
700
600
mA
ICC5
1250
1100
1000
mA
ICC6
35
35
35
mA
ICC7
1700
1600
1500
mA
Precharge quiet STANDBY current
All banks idle; tCK=tCK(ICC); CKE is HIGH, CS\ is HIGH;
Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge STANDBY current
All banks idle; tCK-=tCK(ICC); CKE is HIGH, CS\ is HIGH;
Other control and address bus inputs are switching; Data bus
inputs are switching
Active POWER-DOWN current
MRS[12]=0
All banks open; tCK=tCK(ICC); CKE is LOW;
Other control and address inputs are stable; Data
bus inputs are floating
ICC3P
mA
MRS[12]=1
Active STANDBY current
All banks open; tCK=tCK(ICC), tRAS MAX(ICC),
tRP=tRP(ICC); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are
switching; Data bus inputs are switching
Operating Burst WRITE current
All banks open, continuous burst writes; BL=4, CL=CL(ICC),
tRP=tRP(ICC); CKE is HIGH, CS\ is HIGH betwwn valid
commands; Address bus inputs are switching; Data bus
Operating Burst READ current
All banks open, continuous burst READS, Iout=0mA; BL=4,
CL=CL(ICC), AL=0; tCL=tCK(ICC), tRAS=tRAS MAX(ICC),
tRP=tRP(ICC); CKE is HIGH, CS\ is HIGH betwwn valid
commands; Address and Data bus inputs switching
Burst REFRESH current
tCK=tCK(ICC); refresh command at every iRFC(ICC) interval;
CKE is HIGH, CS\ is HIGH Between valid commands;
Address bus inputs are switching; Data bus inputs are
switching
Self REFRESH current
CK and CK\ at 0V; CKE </=0.2V; Other contro, address and
data inputs are floating
Operating bank Interleave READ current:
All bank interleaving READS, IOUT = 0mA; BL=4,
CL=CL(ICC), AL=tRCD(ICC)-1xtCK(ICC); tCK=tCK(ICC),
tRC=tRC(ICC), tRRD=tRRD(ICC); CKE is HIGH, CS\ is HIGH
between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
23
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
AC OPERATING SPECIFICATIONS
Parameter
Clock
Clock Cycle Time
Clock Jitter
DATA
Symbol
tCKAVG
CL=4
tCKAVG
CL=3
Clock High Time
Clock Low Time
Half Clock Period
Clock Jitter - Period
DATA Strobe
CL=5
Min of
Clock Jitter - Half Period
Clock Jitter - Cycle to Cycle
-3
667MHz
MIN
MAX
3
8
3.75
8
-38
533MHz
MIN
MAX
-5
400MHz
MIN
MAX
Units
ns
3.75
8
5
8
ns
tCKAVG
5
8
5
8
5
8
ns
tCHAVG
0.48
0.52
0.48
0.52
0.48
0.52
tCK
tCLAVG
tHP
tJITPER
0.48
0.52
0.48
0.52
0.48
0.52
tCH,tCL
-125
125
-125
125
-125
125
tCK
ps
ps
tJIT DUTY
-125
125
-125
125
-150
150
ps
tJITCC
tCH,tCL
250
tCH,tCL
250
250
ps
tERR2PER
-175
175
-175
175
-175
175
ps
Cumulative Jitter error, 4 Cycles
tERR4PER
-250
250
-250
250
-250
250
ps
Cumulative Jitter error, 6-10 Cycles
tERR10PER
-350
350
-350
350
-350
350
ps
Cumulative Jitter error, 11-50 Cycles
DQ hold skew factor
DQ output access time from CK/CK\
Data-out High-Z window from CK/CK\
DQS Low-Z window from CL/CK\
tERR50PER
tQHS
tAC
tHZ
tLZ1
-450
-450
450
340
450
-450
-500
450
400
500
-450
-600
450
450
600
tAC(MIN)
tAC(MAX)
tAC(MIN)
tAC(MAX)
tAC(MIN)
tAC(MAX)
ps
ps
ps
ps
ps
tAC(MAX)
2*tAC(MIN)
tAC(MAX)
2*tAC(MIN)
tAC(MAX)
Cumulative Jitter error, 2 Cycles
tAC(MAX)
tAC(MAX)
tAC(MAX)
tLZ2
2*tAC(MIN)
DQ and DM input setup time relative to DQS
tDSJEDEC
100
100
150
ps
DQ and DM input hold time relative to DQS
DQ and DM input pulse width (for each input)
Data Hold skew factor
DQ-DQS Hold, DQS to first DQ to go non valid, per access
Data valid output window (DVW)
DQS input-high pulse width
DQS input-low pulse width
DQS output access time from CK/CK\
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising-hold time
DQS-DQ skew, DQS to last DQ valid, per group, per access
DQS READ preamble
DQS READ postamble
WRITE preamble setup time
DQS WRITE preamble
DQS WRITE postamble
Positive DQS latching edge to associated Clock edge
WRITE command to first DQS latching transition
tDHJEDEC
tDIPW
tQHS
tQH
tDVW
tDQSH
tDQSL
tDQSCK
tDSS
tDSH
tDQSQ
tRPRE
tRPST
tWPRES
tWPRE
tWPST
tDQSS
175
0.35
225
0.35
275
0.35
ps
tCK
ps
ps
ps
tCK
tCK
ps
tCK
tCK
ps
tCK
tCK
ps
tCK
tCK
tCK
tCK
DQ Low-Z window from CK/CK\
AS4DDR264M72PBG1
Rev. 3.1 01/10
340
400
450
tHP-tQHS
tHP-tQHS
tHP-tQHS
tQH-tDQSQ
tQH-tDQSQ
tQH-tDQSQ
0.35
0.35
-400
0.2
0.2
0.35
0.35
-400
0.2
0.2
0.35
0.35
-450
0.2
0.2
0.9
0.4
0
0.35
0.4
-0.25
400
240
1.1
0.6
0.6
0.25
0.9
0.4
0
0.35
0.4
-0.25
400
300
1.1
0.6
0.6
0.25
0.9
0.4
0
0.35
0.4
-0.25
450
350
1.1
0.6
0.6
0.25
WL-tDQSS WL+tDQSS WL-tDQSS WL+tDQSS WL-tDQSS WL+tDQSS
ps
Micross Components reserves the right to change products or specifications without notice.
24
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
AC OPERATING SPECIFICATIONS (CONTINUED)
Parameter
Address and Control input puslse width for each input
PWRDN
ODT
S. REFRESH
REFRESH
COMMAND and ADDRESS
Address and Control input setup time
Symbol
tIPW
tISJEDEC
-3
667Mbps
MIN
MAX
0.6
-38
533Mbps
MIN
MAX
0.6
-5
400Mbps
MIN
MAX
0.6
200
250
350
ps
275
2
55
10
15
50
40
7.5
15
375
2
55
10
15
50
40
7.5
15
475
2
55
10
15
50
40
7.5
15
ps
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
ns
Address and Control input hold time
CAS\ to CAS\ command delay
ACTIVE to ACTIVE command (same bank)
ACTIVE bank a to ACTIVE bank b Command
ACTIVE to READ or WRITE delay
4-Bank activate period
ACTIVE to PRECHARGE
Internal READ to PRECHARGE command delay
WRITE recovery time
Auto PRECHARGE WRITE recovery+PRECHARGE time
Internal WRITE to READ command delay
PRECHARGE command period
PRECHARGE ALL command period
LOAD MODE, command Cycle time
CKE LOW to CK, CK\ uncertainty
REFRESH to ACTIVE or REFRESH to REFRESH
command Interval
Average periodic REFRESH interval [Industrial temp]
tIHJEDEC
tCCD
tRC
tRRD
tRCD
tFAW
tRAS
tRTP
tWR
tDAL
tWTR
tRP
tRPA
tMRD
tDELAY
tREFIIT
7.8
Average periodic REFRESH interval [Enhanced temp]
tREFIET
5.9
Average periodic REFRESH interval [Military temp]
Exit SELF REFRESH to non READ command
tREFIXT
3.9
Exit SELF REFRESH to READ command
Exit SELF REFRESH timing reference
700001
700001
tWR + tRP
tWR + tRP
tWR + tRP
7.5
15
7.5
15
10
15
tRP+tCL
tRP+tCL
tRP+tCL
2
2
2
tIS + tCL + tIH
tRFC
127
70000 1
tIS + tCL + tIH
127
70000 1
700001
tIS + tCL + tIH
Units
tCK
70000 1
ns
7.8
7.8
us
5.9
5.9
us
3.9
3.9
us
127
tXSNR
tRFC(min)+1
0
tRFC(min)+1
0
tRFC(min)+1
0
ns
tXSRD
200
200
200
tCK
tISXR
tIS
ODT turn-on delay
tAOND
2
2
tIS
2
2
2
2
ODT turn-on delay
tAOND
tAC(min)
tAC(max)+
700
tAC(min)
tAC(max)+
1000
tAC(min)
tAC(max)+
1000
ps
ODT turn-off delay
tAOPD
2.5
2.5
2.5
2.5
2.5
2.5
tCK
ODT turn-off delay
tAOF
tAC(min)
tAC(max)+
600
tAC(min)
tAC(max)+
600
tAC(min)
tAC(max)+
600
ps
tAC(min) +
2000
2 x tCK +
tAC(max)+
1000
tAC(min) +
2000
2 x tCK +
tAC(max)+
1000
ps
tAC(min) +
2000
2.5 x tCK +
tAC(max)+
1000
tAC(min) +
2000
2.5 x tCK +
tAC(max)+
1000
ps
ODT turn-on (power-down mode)
tAONPD
tAC(min) +
2000
2 x tCK +
tAC(max)+
1000
ODT turn-off (power-down mode)
tAOFPD
tAC(min) +
2000
2.5 x tCK +
tAC(max)+
1000
ODT to power-down entry latency
ODT power-down exit latency
ODT enable from MRS command
Exit active POWER-DOWN to READ command, MR[12]=0
Exit active POWER-DOWN to READ command, MR[12]=1
Exit PRECHARGE POWER-DOWN to any non READ
CKE Min. HIGH/LOW time
tANPD
tAXPD
tMOD
tXARD
tSARDS
tXP
tCLE
tIS
3
8
12
2
3
8
12
2
3
8
12
2
7 - AL
6 - AL
6 - AL
2
3
2
3
2
3
ps
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
Note 1: Max value reduced to 10,000ns at 125 oC
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
25
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
MECHANICAL DIAGRAM
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
26
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
ORDERING INFORMATION
Core Clock
Freqency
Data Clock Rate
Device Grade
Availability
AS4DDR264M72PBG1-3/IT
333MHz
667Mbs
Industrial
Consult Factory
AS4DDR264M72PBG1-38/IT
266MHz
533Mbs
Industrial
Consult Factory
AS4DDR264M72PBG1-5/IT
200MHZ
400Mbs
Industrial
Consult Factory
AS4DDR264M72PBG1-3/ET
333MHz
667Mbs
Enhanced
Consult Factory
AS4DDR264M72PBG1-38/ET
266MHz
533Mbs
Enhanced
Consult Factory
AS4DDR264M72PBG1-5/ET
200MHZ
400Mbs
Enhanced
Consult Factory
AS4DDR264M72PBG1-3/XT
333MHz
667Mbs
Military
Consult Factory
AS4DDR264M72PBG1-38/XT
266MHz
533Mbs
Military
Consult Factory
AS4DDR264M72PBG1-5/XT
200MHZ
400Mbs
Military
Consult Factory
AS4DDR264M72PBG1R-3/IT
333MHz
667Mbs
Industrial - RoHS
Consult Factory
AS4DDR264M72PBG1R-38/IT
266MHz
533Mbs
Industrial - RoHS
Consult Factory
AS4DDR264M72PBG1R-5/IT
200MHZ
400Mbs
Industrial - RoHS
Consult Factory
AS4DDR264M72PBG1R-3/ET
333MHz
667Mbs
Enhanced - RoHS
Consult Factory
AS4DDR264M72PBG1R-38/ET
266MHz
533Mbs
Enhanced - RoHS
Consult Factory
AS4DDR264M72PBG1R-5/ET
200MHZ
400Mbs
Enhanced - RoHS
Consult Factory
AS4DDR264M72PBG1R-3/XT
333MHz
667Mbs
Military - RoHS
Consult Factory
AS4DDR264M72PBG1R-38/XT
266MHz
533Mbs
Military - RoHS
Consult Factory
AS4DDR264M72PBG1R-5/XT
200MHZ
400Mbs
Military - RoHS
Consult Factory
Part Number
IT = Industrial = Industrial class integrated component, fully operable across -40C to +85C
ET = Enhanced = Enhanced class integrated component, fully operable across -40C to +105C
XT = Military = Mil-Temperature class integrated component, fully operable across -55C to +125C
AS4DDR264M72PBG1
Rev. 3.1 01/10
Micross Components reserves the right to change products or specifications without notice.
27
iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
DOCUMENT TITLE
4.8Gb, 64M x 72, DDR2 SDRAM, 16mm x 23mm - 208 PBGA Multi-Chip Package [iPEM]
REVISION HISTORY
Rev #
0.0
0.5
1.0
1.1
1.5
2.0
2.5
3.0
3.1
AS4DDR264M72PBG1
Rev. 3.1 01/10
History
Release Date
Initial Release
January 2008
Updated Pinout
May 2008
Revised part description (pg 1)
May 2008
Revised typical weight (pg 1)
Reference to compatible part
Added configuration addressing table September 2008
to page 1
Updated Drawing
December 2008
removed references to VCCQ
Updated Drawing
January 2009
Updated Drawing
April 2009
Updated Drawing*
June 2009
*No overall dimensions changed. New
product shipped after July 1, 2009 will
be with the underfilled package.
Changed “Extended” temp reference to “Military”
Updated Micross Information
January 2010
Status
Advance
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Micross Components reserves the right to change products or specifications without notice.
28