Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC-VDD102 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-VVD102 v01.0209 ATTENUATORS - ANALOG - CHIP 1 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz Typical Applications Features This HMC-VVD102 is ideal for: Low Insertion Loss: 1.5 dB • Point-to-Point Radios Wide Dynamic Range: 18 dB • Point-to-Multi-Point Radios High Input IP3: +17 dBm • Military Radios, Radar & ECM Analog Control Voltage: -4 to +4V • Test Equipment & Sensors Die Size: 1.01 x 1.175 x 0.1 mm • Space General Description Functional Diagram The HMC-VVD102 is a monolithic GaAs PIN diode based Voltage Variable Attenuator (VVA) which exhibits low insertion loss, high IP3 and wide dynamic range. All bond pads and the die backside are Ti/ Au metallized and the PIN diode devices are fully passivated for reliable operation. This wideband MMIC VVA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes Electrical Specifi cations*, TA = +25 °C, 50 Ohm System Parameter Min. Frequency Range Typ. Max. 17 - 27 GHz Insertion Loss 1.5 Attenuation Range 18 dB Return Loss (Min. Attenuation) 12 dB Return Loss (Max. Attenuation) 15 dB Input IP3 17 dBm IM3 @ Pin = 0 dBm / Tone 2 30 *Unless otherwise indicated, all measurements are from probed die 1 - 28 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB dBc HMC-VVD102 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz 1 Maximum Attenuation vs. Frequency Minimum Attenuation vs. Frequency -19 -20 LOSS (dB) LOSS (dB) -1 -2 -21 -22 -23 -3 -24 -4 -25 13 15 17 19 21 23 25 27 13 15 17 FREQUENCY (GHz) Input & Output Return Loss vs. Frequency @ Minimum Attenuation 21 23 25 27 Input & Output Return Loss vs. Frequency @ Maximum Attenuation 0 0 INPUT (dB) OUTPUT (dB) INPUT (dB) OUTPUT (dB) -5 RETURN LOSS (dB) -3 RETURN LOSS (dB) 19 FREQUENCY (GHz) -6 -9 -12 -10 -15 ATTENUATORS - ANALOG - CHIP 0 -20 -15 -25 -18 13 15 17 19 21 23 25 27 13 15 17 19 21 23 25 27 FREQUENCY (GHz) FREQUENCY (GHz) IM3 vs. Vdd2 (Vdd1= 4V) @ 17.5 GHz (0 dBm Tones) IM3 vs. Frequency (0 dBm Tones) 80 70 70 60 IM3 (dBc) IM3 (dBc) 60 50 40 50 Vdd1 = 4V Vdd2 = 0.5V (Best Case) Vdd1 = 4V Vdd2 = 0.5V (Worst Case) 40 30 30 20 20 -4 -2 0 VD2 (V) 2 4 17 19 21 23 25 27 FREQUENCY (GHz) Note: Measured Performance Characteristics (Typical Performance at 25°C) Two-Tone measurement @ 0 dBm / tone For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 29 HMC-VVD102 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz ATTENUATORS - ANALOG - CHIP 1 Absolute Maximum Ratings Control Voltage Range (Vdd) -6 to +6 Vdc Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Total Bias Current (Idd) 20 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-VVD102 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz 1 Pad Descriptions Function Description 1 RFIN This pad is DC blocked and matched to 50 Ohms. 2, 3 Vdd1, Vdd2 Control Input 4 RFOUT This pad is DC blocked and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com ATTENUATORS - ANALOG - CHIP Pad Number 1 - 31 HMC-VVD102 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz Assembly Diagram ATTENUATORS - ANALOG - CHIP 1 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the attenuator. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. 1 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-VVD102 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 17 - 27 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate ATTENUATORS - ANALOG - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 33