HMC570


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC570
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HMC570
v03.0711
mixers - i/q Receivers - CHIP
2
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Typical Applications
Features
The HMC570 is ideal for:
10 dB Conversion Gain
• Point-to-Point and Point-to-Multi-Point Radio
Image Rejection: 17 dB
• Military Radar, EW & ELINT
2 LO to RF Isolation: 35 dB
• Satellite Communications
Noise Figure: 3 dB
Input IP3: +3 dBm
Die Size: 2.33 x 2.73 x 0.10 mm
Functional Diagram
General Description
The HMC570 is a compact GaAs MMIC I/Q
downconverter chip which provides a small signal
conversion gain of 10 dB with a noise figure of 3 dB
and 17 dB of image rejection across the frequency
band. The device utilizes an LNA followed by an image
reject mixer which is driven by an active x2 multiplier.
The image reject mixer eliminates the need for a filter
following the LNA, and removes thermal noise at the
image frequency. I and Q mixer outputs are provided
and an external 90° hybrid is needed to select the
required sideband. All data shown below is taken
with the chip mounted in a 50 Ohm test fixture and
includes the effects of 1 mil diameter x 20 mil length
bond wires on each port. This product is a much
smaller alternative to hybrid style image reject mixer
downconverter assemblies.
Electrical Specifications, TA = +25° C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc*
Parameter
Min.
Frequency Range, RF
Typ.
Max.
Min.
17.7 - 19.7
Typ.
Max.
17 - 21
Units
GHz
Frequency Range, LO
7 - 12
7 - 12
GHz
Frequency Range, IF
DC - 3.5
DC - 3.5
GHz
12
dB
4
dB
Conversion Gain (As IRM)
9
Noise Figure
10
9
3
Image Rejection
14
17
14
22
dB
1 dB Compression (Input)
-7
-4
-10
-6
dBm
2 LO to RF Isolation
35
40
30
35
dB
2 LO to IF Isolation
28
30
25
30
dB
IP3 (Input)
-5
-2
-6
+3
dBm
Amplitude Balance
0.5
0.5
dB
Phase Balance
12
4
Deg
Total Supply Current
125
165
125
165
mA
*Data taken as IRM with external IF hybrid
2-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Data Taken As IRM With External IF Hybrid
Image Rejection vs. Temperature
30
15
25
10
5
+25C
+85C
-55C
0
-5
-10
20
15
+25C
+85C
-55C
10
5
0
16
17
18
19
20
21
22
16
17
18
RF FREQUENCY (GHz)
20
21
22
Return Loss
0
20
15
-5
RETURN LOSS (dB)
CONVERSION GAIN (dB)
19
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
10
5
0
0 dBm
+2 dBm
+4 dBm
+6 dBm
+8 dBm
-5
-10
-15
RF
LO
-20
-25
-10
16
17
18
19
20
21
6
22
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
RF FREQUENCY (GHz)
Input P1dB vs. Temperature
Input IP3 vs. LO Drive
10
0
-2
-4
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
5
-6
-8
IP3 (dBm)
P1dB (dBm)
2
mixers - i/q Receivers - CHIP
20
IMAGE REJECTION (dB)
CONVERSION GAIN (dB)
Conversion Gain vs. Temperature
-10
-12
+25C
+85C
-55C
-14
0
-5
-16
-18
-20
-10
16
17
18
19
20
RF FREQUENCY (GHz)
21
22
16
17
18
19
20
21
22
RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2-2
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Quadrature Channel Data Taken Without IF Hybrid
IF Bandwidth*
10
20
RESPONSE (dB)
ISOLATION (dB)
10
-10
RF/IF1
-20
2LO/IF2
-30
-40
CONVERSION GAIN
RETURN LOSS
0
-5
-15
-20
0.5
-60
16
5
-10
2LO/IF1
2LO/RF
-50
17
18
19
20
21
22
1
1.5
2
2.5
3
3.5
21
22
21
22
IF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
Phase Balance vs. LO Drive
20
2
1.5
AMPLITUDE BALANCE (dB)
mixers - i/q Receivers - CHIP
15
RF/IF2
0
PHASE BALANCE (degrees)
2
Isolations
1
0.5
0
-0.5
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
-1
-1.5
-2
15
10
5
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
0
-5
16
17
18
19
20
21
16
22
17
RF FREQUENCY (GHz)
Noise Figure vs. LO Drive,
LO Frequency = 8.6 GHz
20
6
5
0 dBm
+2 dBm
+4 dBm
+6 dBm
+8 dBm
6
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
19
Noise Figure vs. LO Drive,
IF Frequency = 100 MHz
8
4
2
0
0.5
18
RF FREQUENCY (GHz)
0 dBm
+2 dBm
+4 dBm
+6 dBm
+8 dBm
4
3
2
1
0
1
1.5
2
2.5
IF FREQUENCY (GHz)
3
3.5
4
16
17
18
19
20
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF hybrid, LO Frequency fixed at 8.6 GHz and RF varied
2-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Absolute Maximum Ratings
RF
+2 dBm
mRF
0
1
2
3
4
LO Drive
+ 13 dBm
0
xx
26
25
19
27
Vdd
5.5V
nLO
1
27
26
0
25
38
Channel Temperature
175°C
2
54
74
61
66
43
920 mW
3
xx
xx
xx
79
76
Continuous Pdiss (T=85°C)
(derate 10.2 mW/°C above 85°C)
4
xx
xx
xx
xx
xx
Thermal Resistance (RTH)
(channel to package bottom)
98.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1B
RF = 18 GHz @ -20 dBm
LO = 8.5 GHz @ +4 dBm
Data taken without IF hybrid
All values in dBc below IF power level (1RF -2LO = 1 GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
mixers - i/q Receivers - CHIP
MxN Spurious Outputs
2-4
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Outline Drawing
mixers - i/q Receivers - CHIP
2
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
2-5
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS 0.004”
3. BOND PAD METALIZATION: GOLD
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. OVERALL DIE SIZE ±0.002
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Pad Descriptions
Function
Description
1
VddRF
Power supply for RF LNA.
External RF bypass capacitors are required.
2
VddLO2
Power supply for second stage of LO amplifier.
External RF bypass capacitors are required.
3
VddLO
Power supply for first stage of LO amplifier.
External RF bypass capacitors are required.
4
LO
This pad is AC coupled
and matched to 50 Ohms.
5
IF1
6
IF2
7
RF
This pad is AC coupled
and matched to 50 Ohms.
GND
The backside of the die must be
connected to RF/DC ground.
Interface Schematic
This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary frequency range.
For operation to DC, this pad must not source /sink more
than 3 mA of current or die non - function and possible
die failure will result.
Typical Application
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
mixers - i/q Receivers - CHIP
Pad Number
2-6
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Assembly Drawing
mixers - i/q Receivers - CHIP
2
2-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC570
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
flat.
2
Wire Bond
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
mixers - i/q Receivers - CHIP
v03.0711
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2-8