Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC6000 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC6000 v02.0514 mmWAVE TRANSMITTER - CHIP Millimeterwave Transmitter IC 57 - 64 GHz 1 Typical Applications Features The HMC6000 is ideal for: Support for IEEE Channel Plan • WiGig Single Carrier Modulations Output Power: 12 dBm • 60 GHz ISM Band Data Transmitter Max Gain: 38 dB • Multi-Gbps Data Communications Gain Control Range: 17 dB • High Definition Video Transmission Integrated Frequency Synthesizer • RFID Integrated Image Reject Filter Programmable IF Gain Block Universal Analog I/Q Baseband Interface Three-Wire Serial Digital Interface Die Size: 4.082 x 1.814 mm Functional Diagram General Description The HMC6000 is a complete mmWave transmitter on a chip operating from 57 to 64 GHz with 1.8 GHz of modulation bandwidth. An integrated synthesizer provides tuning in 500 or 540 MHz step sizes depending on the choice of external reference clock. Support for a wide variety of modulation formats is provided through a universal analog baseband IQ interface. The transmitter chip supports all single carrier WiGig modulations and optionally supports dedicated FSK/MSK modulation formats for lower cost and lower power serial data links without the need for high speed data converters. A differential output provides up to 12 dBm linear output power into a 100 ohm load. Together with the HMC6001, a complete transmit/receive chipset is provided for multi-Gbps operation in the unlicensed 60 GHz ISM band. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Parameter Condition Frequency Range Min. Typ. 57 Max. Units 64 GHz Frequency Step Size 308.5714 MHz Ref Clk 0.54 GHz Frequency Step Size 285.714 MHz Ref Clk 0.50 GHz 3dB BW, double-sided 1.8 Modulation Bandwidth Pout minus total Pin of all 4 baseband inputs Max Gain 33 36.5 GHz 40 dB Gain Control Range 17 dB Gain Step Size 1.3 dB P1dB 12 dBm Psat 17 dBm Image Rejection 34 dB 20 dB Sideband Suppression 14 Carrier Suppression [1] 11 20 dB 32 dBc Phase Noise @ 100 kHz -72 dBc/Hz Phase Noise @ 1 MHz -86 dBc/Hz Phase Noise @ 10 MHz -111 dBc/Hz Phase Noise @ 100 MHz -125 dBc/Hz Phase Noise @ 1 GHz -127 dBc/Hz 3xLO Suppression TX Noise Floor Max Gain -125 dBm/Hz PLL Loop BW Internal Loop Ffilter 200 kHz Synthesizer Settling Time <6 μs Power Dissipation 0.8 W mmWAVE TRANSMITTER - CHIP Table 1. Electrical Specifications, TA = +25° C, See Test Conditions [1] Single point calibration can be used to improve carrier suppression. Table 2. Test Conditions Reference frequency 308.5714 MHz Temperature +25°C Gain Setting Max Input Signal Level -31 dBm @ each of the 4 baseband inputs IF Bandwidth Max Input Impedance 100Ω Differential Output Impedance 100Ω Differential For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Table 3. Recommended Operation Conditions mmWAVE TRANSMITTER - CHIP Description Analog Ground Symbol Min GND Typical Max 0 Units Vdc VCC_PA1 VCC_PA2 3.9 4.0 4.1 Vdc VDD_PA VCC_DRV VCC_TRIP VCC_DIV VCC_REG VCC_IF VCC_MIX 2.565 2.7 2.835 Vdc 1.3 1.35 1.48 Vdc Serial Digital Interface – Logic High DATA ENABLE CLK RESET 0.9 1.2 1.4 V Serial Digital Interface – Logic Low DATA ENABLE CLK RESET -0.05 0.1 0.3 V Power Supplies VDD_PLL VDDD Input Voltage Ranges Reference Clock Baseband I and Q [1] [2] 3.3 or 2.5V LVPECL/LVDS 1.2V CMOS REFCLKP REFCLKM BB_IM BB_IP BB_QM BB_QP 5 Baseband I and Q Common mode MSK Data [3] 25 V 100 1.6 FM_IM FM_IP FM_QM FM_QP MSK Common mode 200 500 mVp-p V 750 1.1 mVp-p V RF Output [4] RFOUTP RFOUTM Input Resistance DATA ENABLE CLK RESET >50 kOhms REFCLKP / M 50 Ohm 17 dBm Temperature -40 +85 C [1] Values above 25 mVp-p are to be used only with IF attenuation to keep the Pout below 16 dBm [2] 25mVp-p is applied at each of the 4 Baseband Inputs [3] 500mVp-p is applied at each of the 4 FM Inputs [4] 4.0Vdc present at the TX RF output pads. To avoid damaging the Power Amplifier the pads must be AC coupled to any other DC voltage including ground 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Table 4. Power Consumption Typical Current (mA) VCC_PA1 (4.0Vdc) 33 VCC_PA2 (4.0Vdc) 33 VCC_REG (2.7Vdc) 12 VCC_DRV1 (2.7Vdc) 16 VCC_DRV2 (2.7Vdc) 16 VCC_MIX (2.7Vdc) 29 VCC_IF (2.7Vdc) 31 VCC_TRIP (2.7Vdc) 48 VCC_DIV (2.7Vdc) 35 VDD_PA (2.7Vdc) 6 VDDD (1.35Vdc) <1 VDD_PLL (1.35Vdc) 8 Typical Power Consumption (Watts) 0.27 0.53 0.01 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] mmWAVE TRANSMITTER - CHIP Voltage 4 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz 18 18 16 16 14 14 P1dB (dBm) OUTPUT POWER (dBm) Figure 2. Output P1dB vs. Frequency Over Temperature[2] 20 12 10 8 12 10 8 6 6 4 4 2 2 0 57.2 58.3 59.4 60.4 61.5 62.6 0 57.2 63.7 58.3 59.4 FREQUENCY (GHz) 60.4 62.6 63.7 +25C +85C -40C Figure 3. Output P1dB vs. Frequency Across Voltage Figure 4. 58.32 GHz (IEEE CH-1) Output Power vs. IF Gain Setting[1] 20 16 OUTPUT POWER (dBm) 18 16 14 12 10 8 6 4 12 8 4 0 -4 -8 -12 2 -16 0 57.2 58.3 59.4 60.4 61.5 62.6 0 63.7 1 2 3 4 5 6 7 8 9 10 11 12 13 IF ATTENUATOR SETTING FREQUENCY (GHz) Pin = -40dBm Pin = -31dBm Pin = -22dBm Min bias Typical bias Max bias Figure 5. 60.48 GHz (IEEE CH-2) Output Power vs. IF Gain Setting[1] Figure 6. 62.64 GHz (IEEE CH-3) Output Power vs. IF Gain Setting[1] 20 20 16 16 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 61.5 FREQUENCY (GHz) Pin = -40 dBm Pin = -31 dBm Pin = -22 dBm P1dB (dBm) mmWAVE TRANSMITTER - CHIP Figure 1. Output Power vs. Frequency at Maximum Gain[1] 12 8 4 0 -4 -8 -12 12 8 4 0 -4 -8 -12 -16 -16 0 1 2 3 4 5 6 7 8 9 10 11 12 13 IF ATTENUATOR SETTING Pin=-40dBm Pin=-31dBm Pin=-22dBm 0 1 2 3 4 5 6 7 8 9 10 11 12 13 IF ATTENUATOR SETTING Pin=-40dBm Pin=-31dBm Pin=-22dBm [1] Input power of -40, -31 and -22dBm applied at each of the 4 baseband inputs [2] Maximum gain 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Figure 7. Gain vs. Frequency Over Temperature[3] Figure 8. OIP3 vs. Frequency over perature[2] Tem- 30 50 25 40 20 OIP3 (dB) GAIN (dB) 35 30 25 20 15 10 15 10 5 5 0 57.2 58.3 59.4 60.4 61.5 62.6 0 57.2 63.7 58.3 FREQUENCY (GHz) 59.4 60.4 Figure 9. Sideband Suppression vs. Frequency Over Temperature[4] SIDEBAND SUPPRESSION (dBc) SIDEBAND SUPPRESSION (dBc) 30 25 20 15 10 5 58.3 59.4 60.5 61.6 62.6 25 20 15 10 5 0 57.2 63.7 58.3 FREQUENCY (GHz) 59.4 60.5 61.6 62.6 63.7 62.6 63.7 FREQUENCY (GHz) +25C +85C -40C Min bias Typical bias Max bias Figure 11. Image Rejection vs. Frequency Over Temperature[4] Figure 12. Image Rejection vs. Frequency Across IF Gain[5] 45 40 40 35 IMAGE SUPPRESSION (dBc) iMAGE SUPPRESSION (dBc) 63.7 Figure 10. Sideband Suppression vs. Frequency Across Voltage[4] 30 35 30 25 20 15 10 30 25 20 15 10 5 5 0 57.2 62.6 +25C +85C -40C +25C +85C -40C 0 57.2 61.5 FREQUENCY (GHz) mmWAVE TRANSMITTER - CHIP 45 58.3 59.4 60.4 61.5 FREQUENCY (GHz) +25C +85C -40C 62.6 63.7 0 57.2 58.3 59.4 60.4 61.5 FREQUENCY (GHz) IF Attn = 0dB IF Attn = 5dB IF Attn = 10dB IF Attn = 15dB [2] Maximum gain [3] Input power of -40dBm applied at each of the 4 baseband inputs, Gain = Pout minus total Pin of all 4 baseband inputs [4] Max gain, sideband offset = 100MHz, input power of -31dBm applied to each of the 4 baseband inputs @ +25C, -22dBm @ +85C and -40dBm @ -40C [5] Input power of -31dBm applied to each of the 4 baseband inputs For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Figure 13. Carrier Suppression vs. Frequency Over Temperature[6] Figure 14. 3x LO Suppression vs. Frequency Over Temperature[6] 60 3xLO SUPPRESSION (dBc) CARRIER SUPPRESSION (dBc) 55 35 30 25 20 15 10 5 0 57.2 50 45 40 35 30 25 20 15 10 5 58.3 59.4 60.5 61.6 62.6 0 57.2 63.7 58.3 59.4 60.4 Figure 15. 3x LO Suppression vs. Frequency Across IF Gain[5] 55 2xLO SUPPRESSION (dBc) 60 45 40 35 30 25 20 15 10 5 62.6 63.7 50 45 40 35 30 25 20 15 10 5 58.3 59.4 60.4 61.5 62.6 0 57.2 63.7 58.3 FREQUENCY (GHz) IF Attn =10dB IF Attn = 15dB 4 5 10 6 7 10 60.4 61.5 10 8 10 IF Attn = 0dB IF Attn =10dB IF Attn = 5dB IF Attn = 15dB Figure 18. Phase Noise vs. Frequency Offset Over Voltage[7] PHASE NOISE (dBc/Hz) Figure 17. Phase Noise vs. Frequency Offset Over Temperature[7] 10 59.4 FREQUENCY (GHz) IF Attn = 0dB IF Attn = 5dB PHASE NOISE (dBc/Hz) 63.7 Figure 16. 2xLO vs. Frequency Across IF Gain[5] 50 -60 -65 -70 -75 -80 -85 -90 -95 -100 -105 -110 -115 -120 -125 -130 -135 3 10 62.6 +25C +85C -40C +25C +85C -40C 0 57.2 61.5 FREQUENCY (GHz) FREQUENCY (GHz) 3xLO SUPPRESSION (dBc) mmWAVE TRANSMITTER - CHIP 40 9 10 FREQUENCY (Hz) +25C +85C -40C -60 -65 -70 -75 -80 -85 -90 -95 -100 -105 -110 -115 -120 -125 -130 3 10 4 10 5 10 6 10 7 10 8 10 9 10 FREQUENCY (Hz) Min bias Typical bias Max bias [5] Input power of -31dBm applied to each of the 4 baseband inputs [6] Max gain, input power of -31dBm applied to each of the 4 baseband inputs [7] 60.48 GHz Carrier 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Figure 20. 60.48 GHz MCS1 WiGig waveform @ 16dBm vs. WiGig Mask[8] 10 5 8 0 -5 AMPLITUDE (dBc) AMPLITUDE (dBm) 6 4 2 0 -2 -4 -10 -15 -20 -25 -30 -35 -6 -40 -8 -45 -10 -1000 -800 -600 -400 -200 -50 0 200 400 600 800 1000 FREQUENCY OFFSET (MHz) 58.32 GHz 60.48 GHz 62.64 GHz -3000 -2250 -1500 -750 0 750 1500 2250 3000 FREQUENCY OFFSET (MHz) RF Spectrum WiGig Mask Figure 21. 60.48 GHz MCS1 WiGig waveform @ 14dBm vs. IEEE 802.15.3c Mask[9] 5 0 AMPLITUDE (dBc) -5 -10 -15 -20 -25 -30 -35 -40 mmWAVE TRANSMITTER - CHIP Figure 19. Passband Response vs. Frequency Offset by Channel[7] -45 -50 -3000 -2250 -1500 -750 0 750 1500 2250 3000 FREQUENCY OFFSET (MHz) RF Spectrum 802.15.3c Mask [7] Max gain, reference Table 12 for IF VGA and IF Up-Mixer Filter Settings [8] Max gain, Input power of -24 dBm applied to each of the 4 baseband inputs [9] Max gain, Input power of -27 dBm applied to each of the 4 baseband inputs For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz mmWAVE TRANSMITTER - CHIP Table 5. Absolute Maximum Ratings VCC_PA = 4 V 4.2 Vdc VDD = 2.7 V 2.85 Vdc VCC = 2.7 V 2.85 Vdc VDD_PLL = 1.35 V 1.6 Vdc VDDD = 1.35 V 1.6 Vdc GND 0± 50 mV Power Dissipation (Combined Pdiss of VCC_PA1 and VCC_PA2) 27 C/W (1.1W total Pdiss) 0.36W (at 85 baseplate) Serial Digital Interface Input Voltage 1.5 Vdc Ref CLK Input (AC coupled)(each) 0.75 Vp-p Baseband Inputs (BB, FM)(each) 0.75 Vp-p Storage Temperature -55°C to 150°C Operating Temperature -40°C to 85°C Outline Drawing Table 6. Die Packaging Information Standard Alternate NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .028 [0.711] ± .001 [.025] 3. BOND PAD METALLIZATION: AL 4. Overall die size ± .002 [.051] VR-33CC-02-X4 GEL_PAK [1] [1] For alternate packaging information contact Hittite Microwave Corporation. Table 7. Die Pad Dimensions 9 Pads Pad Size Pad Opening 1, 6, 7 - 54 0.0040 [0.101] x 0.0040 [0.101] 0.0037 [0.095] x 0.0037 [0.095] 3, 4 0.0028 [0.070] x 0.0028 [0.070] 0.0025 [0.064] x 0.0025 [0.064] 2, 5 0.0046 [0.118] x 0.0059 [0.150] 0.0028 [0.070] x 0.0036 [0.090] For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Pad Number Function Description 1, 2, 5, 6, 8, 11, 13, 15, 17, 19, 21, 24, 27, 28, 30, 32, 34, 36, 40, 50, 53 GND Analog Ground 3 RFOUTM RF negative output – DC coupled – diff match to 100Ω [1] RF positive output – DC coupled – diff match to 100Ω [1] 4 RFOUTP 7 VCC_PA2 4.0V supply (PA) 9 VCC_DRV2 2.7V supply (Driver) 10 VCC_MIX 2.7V (Mixer) 12 BB_QM Baseband negative quadrature input – DC coupled - 50Ω 14 BB_QP Baseband positive quadrature input – DC coupled - 50Ω 16 VCC_IF 2.7V supply (IF) 18 BB_IM Baseband negative in-phase input – DC coupled - 50Ω 20 BB_IP Baseband positive in-phase input – DC coupled - 50Ω 22 FM_QM FSK negative quadrature input – DC coupled - 50Ω 23 FM_QP FSK positive quadrature input – DC coupled - 50Ω 25 FM_IM FSK negative in-phase input – DC coupled - 50Ω 26 FM_IP FSK positive in-phase input – DC coupled - 50Ω 29 VDD_PLL 1.35V supply (VCO) 31 REFCLKM Xtal REF CLK Minus - AC or DC coupled - 50Ω 33 REFCLKP Xtal REF CLK Plus - AC or DC coupled - 50Ω 35 VCC_REG 2.7V supply (VCO) 37, 38, 42, 43 NC Factory test points. Leave floating. Do not connect. 39 VCC_DIV 2.7V supply (Divider) 41 VCC_TRIP 2.7V supply (Tripler) 44 RESET Asynchronous reset-all registers (1.2V CMOS, active high) 45 ENABLE Serial digital interface enable (1.2V CMOS) - 50kΩ 46 VDDD 1.35V supply (serial digital interface) 47 CLK Serial digital interface clock (1.2V CMOS) - 50kΩ 48 DATA Serial digital interface data (1.2V CMOS) - 50kΩ 49 SCANOUT Serial digital interface out (1.2V CMOS) - 50kΩ 51 VCC_DRV1 2.7V supply (Driver) 52 VDD_PA 2.7V supply (PA) mmWAVE TRANSMITTER - CHIP Table 8. Pad Descriptions 54 VDD_PA1 4.0V supply (PA) [1] 4.0Vdc present at the TX RF output pads. To avoid damaging the Power Amplifier the pads must be AC coupled to any other DC voltage including ground For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz mmWAVE TRANSMITTER - CHIP Theory of Operation An integrated frequency synthesizer creates a low-phase noise LO between 16.3 and 18.3 GHz. This is divided by 2, split into quadrature components and used to modulate differential baseband I and Q signals onto an 8 to 9.1 GHz sliding IF. This signal is then filtered and amplified with 17 dB of variable gain, then mixed with three times the LO frequency to upconvert to an RF frequency between 57 and 64 GHz. The step size of the synthesizer equates to 540MHz steps at RF when used with 308.5714 MHz reference crystal (compatible with the IEEE channels of the ISM band) or 500 MHz steps if used with a 285.714 MHz reference crystal. Integrated notch filters attenuate the lower mixing product at 40-46GHz. Two RF amplifier stages provide gain to allow up to 12 dBm differential output. The phase noise and quadrature balance of the HMC6000 is sufficient to carry up to 16QAM modulation. There are no special power sequencing requirements for the HMC6000; all voltages are to be applied simultaneously. Register Array Assignments and Serial Interface The register arrays for both the transmitter and receiver are organized into 16 rows of 8 bits. Using the serial interface, the arrays are written or read one row at a time as shown in Figure 22 and Figure 23, respectively. Figure 22 shows the sequence of signals on the ENABLE, CLK, and DATA lines to write one 8-bit row of the register array. The ENABLE line goes low, the first of 18 data bits (bit 0) is placed on the DATA line, and 2 ns or more after the DATA line stabilizes, the CLK line goes high to clock in data bit 0. The DATA line should remain stable for at least 2 ns after the rising edge of CLK. The Tx IC will support a serial interface running up to several hundred MHz, and the interface is 1.2V CMOS levels. A write operation requires 18 data bits and 18 clock pulses, as shown in Figure 22. The 18 data bits contain the 8-bit register array row data (LSB is clocked in first), followed by the register array row address (ROW0 through ROW15, 000000 to 001111, LSB first), the Read/Write bit (set to 1 to write), and finally the Tx chip address 110, LSB first). Note that the register array row address is 6 bits, but only four are used to designate 16 rows, the two MSBs are 0. After the 18th clock pulse of the write operation, the ENABLE line returns high to load the register array on the IC; prior to the rising edge of the ENABLE line, no data is written to the array. The CLK line should have stabilized in the low state at least 2 ns prior to the rising edge of the ENABLE line. Figure 22. Timing Diagram for writing a row of the Transmitter Serial Interface 11 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Figure 23. Timing Diagram for reading a row of the Transmitter Serial Interface Table 9. Transmitter Register Array Assignments Register Array Row & Bit Internal Signal Name Signal Function mmWAVE TRANSMITTER - CHIP Millimeterwave Transmitter IC 57 - 64 GHz ROW0 ROW0<7> pa_pwrdn Active high to power down most other PA circuits not controlled by ROW0<6> ROW0<6> pa_pwrdn_fast Active high to power down the PA core in < 1 µs ROW0<5> upmixer_pwrdn Active high to power down IF to RF upmixer ROW0<4> divider_pwrdn Active high to power down local oscillator divider ROW0<3> if_bgmux_pwrdn Active high to power down one of three on-chip bandgap refs (IF) and associated mux ROW0<2> if_upmixer_pwrdn Active high to power down baseband to IF upmixer ROW0<1> driver_pwrdn Active high to power down PA predriver ROW0<0> ifvga_pwrdn Active high to power down IF variable gain amplifier ROW1 ROW1<7> ipc_pwrdn Active high to power down on chip current reference generator ROW1<6> tripler_pwrdn Active high to power down frequency tripler ROW1<5> ifvga_q_cntrl<2> ROW1<4> ifvga_q_cntrl<1> ROW1<3> ifvga_q_cntrl<0> These bits control the Q of the IF filter in the baseband to IF upmixer; ROW1<5:3> = 000 for highest Q and highest gain. To reduce Q and widen bandwidth, increment ROW1<5:3> in the sequence 001 100 101 111 ROW1<2> not used ROW1<1> not used ROW1<0> not used ROW1<2:0> = xxx - not used For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 12 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Table 9. Transmitter Register Array Assignments mmWAVE TRANSMITTER - CHIP Register Array Row & Bit Internal Signal Name Signal Function ROW2 ROW2<7> FDB<11> ROW2<6> FDB<10> ROW2<5> FDB<9> ROW2<4> FDB<8> ROW2<3> pa_sel_vgbs<3> ROW2<2> pa_sel_vgbs<2> ROW2<1> pa_sel_vgbs<1> ROW2<0> pa_sel_vgbs<0> Factory Diagnostics; ROW2<7:4> = 1111 for normal operation Controls the regulator for the base voltage of the PA output transistors; ROW2<3:0> = 0000 for normal operation ROW3 ROW3<7> FDB<7> ROW3<6> FDB<6> ROW3<5> FDB<5> ROW3<4> FDB<4> ROW3<3> FDB<3> ROW3<2> FDB<2> ROW3<1> FDB<1> ROW3<0> FDB<0> ROW4<7> pa_sel_vref<3> ROW4<6> pa_sel_vref<2> ROW4<5> pa_sel_vref<1> Factory Diagnostics; ROW4<7:4> = 0001 for normal operation Factory Diagnostics; ROW4<3:0> = 1111 for normal operation ROW4 ROW4<4> pa_sel_vref<0> ROW4<3> driver_bias<2> ROW4<2> driver_bias<1> ROW4<1> driver_bias<0> ROW4<0> driver_bias2<2> Controls the bias current for the PA output transistors; ROW4<7:4> = 0011 for normal operation Controls the bias current for the PA predriver; ROW4<3:1> = 111 for normal operation Controls the bias current for the PA predriver2; ROW4<0> = 1 for normal operation ROW5 ROW5<7> not used ROW5<6> not used ROW5<5> not used ROW5<4> not used ROW5<3> bg_monitor_sel ROW5<2> if_refsel ROW5<1> enable_fm Active high to enable the FSK/MSK modulator inputs. ROW5<1> = 0 for normal I/Q operation ROW5<0> not used ROW5<0> = x - not used ROW6<7> ifvga_bias<3> ROW6<6> ifvga_bias<2> ROW6<5> ifvga_bias<1> ROW6<4> ifvga_bias<0> ROW5<7:4> = x - not used These bits are for reserved for diagnostic purposes; ROW5<3:2> = 01 for normal operation ROW6 13 Controls the bias current of the IF variable gain amplifier; ROW6<7:4> = 1000 for normal operation For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Table 9. Transmitter Register Array Assignments Internal Signal Name ROW6<3> ifvga_tune<3> ROW6<2> ifvga_tune<2> ROW6<1> ifvga_tune<1> ROW6<0> ifvga_tune<0> Signal Function Controls the tuning of the IF filter for the variable gain amplifier; ROW6<3:0> = 1111 for normal operation ROW7 ROW7<7> ifvga_vga_adj<3> ROW7<6> ifvga_vga_adj<2> ROW7<5> ifvga_vga_adj<1> ROW7<4> ifvga_vga_adj<0> ROW7<3> if_upmixer_tune<3> ROW7<2> if_upmixer_tune<2> ROW7<1> if_upmixer_tune<1> ROW7<0> if_upmixer_tune<0> ROW8<7> tripler_bias<13> ROW8<6> tripler_bias<12> IF variable gain amplifier gain control bits; ROW7<7:4> = 0000 is highest gain 1101 is lowest gain Attenuation is ≈ 1.3 dB / step, ≈ 17 dB maximum Controls the tuning of the IF filter for the IF to RF upmixer; ROW7<3:0> = 1111 for normal operation ROW8 ROW8<5> tripler_bias<11> ROW8<4> tripler_bias<10> ROW8<3> tripler_bias<9> ROW8<2> tripler_bias<8> ROW8<1> tripler_bias<7> ROW8<0> tripler_bias<6> ROW9<7> tripler_bias<5> ROW9<6> tripler_bias<4> These bits control the biasing of the frequency tripler; ROW8<7:0> = 10111111 for normal operation mmWAVE TRANSMITTER - CHIP Register Array Row & Bit ROW9 ROW9<5> tripler_bias<3> ROW9<4> tripler_bias<2> ROW9<3> tripler_bias<1> ROW9<2> tripler_bias<0> ROW9<1> driver_bias2<1> ROW9<0> driver_bias2<0> ROW10<7> RDACIN<5> These bits control the biasing of the frequency tripler; ROW9<7:2> = 011011 for normal operation Controls the bias current for the PA predriver2; ROW9<1:0> = 11 for normal operation ROW10 ROW10<6> RDACIN<4> ROW10<5> RDACIN<3> ROW10<4> RDACIN<2> ROW10<3> RDACIN<1> ROW10<2> RDACIN<0> ROW10<1> SYNRESET VCO amplitude adjustment DAC; ROW10<7:2> = 111100 for normal operation ROW10<1> = 0 for normal operation For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 14 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Table 9. Transmitter Register Array Assignments mmWAVE TRANSMITTER - CHIP Register Array Row & Bit ROW10<0> Internal Signal Name Signal Function DIVRATIO<4> ROW10<0> Control the synthesizer divider ratio and output frequency. Refer to Tables 10 and 11 for synthesizer control details. ROW11 ROW11<7> DIVRATIO<3> ROW11<6> DIVRATIO<2> ROW11<5> DIVRATIO<1> ROW11<4> DIVRATIO<0> ROW11<3> BAND<2> ROW11<2> BAND<1> ROW11<1> BAND<0> ROW11<0> REFSELDIV ROW12<7> CPBIAS<2> ROW12<6> CPBIAS<1> ROW12<5> CPBIAS<0> ROW11<7:4> Control the synthesizer divider ratio and output frequency. Refer to Tables 10 and 11 for synthesizer control details. ROW11<3:1> Control the VCO band, and must be changed when tuning the synthesizer output frequency. Refer to Tables 10 and 11 for synthesizer control details. These bits are for reserved for diagnostic purposes; ROW11<0> = 1 for normal operation ROW12 These bits control the synthesizer charge pump bias. ROW12<7:5> = 010 for normal operation ROW12<4> VRSEL<3> ROW12<3> VRSEL<2> ROW12<2> VRSEL<1> ROW12<1> VRSEL<0> ROW12<0> REFSELVCO This bit is for reserved for diagnostic purposes; ROW12<0> = 1 for normal operation ROW13<7> MUXREF These bit are reserved for diagnostic purposes; ROW13<7> = 1 for normal operation ROW13<6> DIV4 ROW13<6> = 0 for normal operation ROW13<5> ENDC Active high to enable DC coupling on synthesizer reference input; ROW13<5> = 0 for normal operation ROW13<4> INI This bit is for reserved for diagnostic purposes; ROW13<4> = 0 for normal operation These bits control the width of the lock window for the synthesizer lock detector. ROW12<4:1> = 1111 specifies the widest lock window for normal operation ROW13 ROW13<3> PDDIV12 Active high to power down 1.2V circuits in synthesizer divider ROW13<2> PDDIV27 Active high to power down 2.7V circuits in synthesizer divider ROW13<1> PDQP Active high to power down synthesizer charge pump ROW13<0> PDVCO Active high to power down synthesizer VCO ROW14<7> PDCAL Active high to power down VCO calibration comparators; ROW14<7> = 0 for normal operation ROW14<6> MUXOUT Controls multiplexing of diagnostic bits, high to read Row15<7:0> ROW14<6> = 1 for normal operation ROW14<5> PDALC12 Active high to power down VCO automatic level control (ALC); ROW14<5> = 1 for normal operation ROW14<4> PLOAD Active high to load external amplitude adjustment bits for VCO ROW14<4> = 1 for normal operation ROW14 15 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Register Array Row & Bit Internal Signal Name Signal Function ROW14<3> WIDE<1> ROW14<2> WIDE<0> Control bits for VCO ALC loop; ROW14<3:2> = 01 for normal operation ROW14<1> SLEW<1> ROW14<0> SLEW<0> ROW15<7> COMPP ROW15<6> COMPN ROW15<5> RDACMSB<2> Controls slew rate in sub-integer N divider ROW14<1:0> = 10 for normal operation ROW15 ROW15<4> RDACMSB<1> ROW15<3> RDACMSB<0> ROW15<2> RDACMUX<0> ROW15<1> RDACMUX<1> ROW15<0> RDACMUX<2> Read only bits to indicate synthesizer lock: ROW15<7:6> = 01 indicates that the VCO control voltage is within the lock window and the synthesizer is locked. 11 indicates the VCO control voltage above lock window 00 below lock window 10 is a disallowed state indicating an error These bits are read only and reserved for factory diagnostic purposes. These bits are read only and reserved for factory diagnostic purposes. mmWAVE TRANSMITTER - CHIP Table 9. Transmitter Register Array Assignments Synthesizer Settings Table 10. IEEE Channels Using 308.5714 MHz Reference Frequency (GHz) Divider Setting Typical Band Setting 57.24 10101 001 57.78 10100 001 58.32 (IEEE CH 1) 10011 010 58.86 10010 010 011 59.40 10001 59.94 10000 011 60.48 (IEEE CH 2) 11111 100 61.02 00000 100 61.56 00001 101 62.10 00010 101 62.64 (IEEE CH 3) 00011 110 63.18 00100 110 63.72 00101 Divide Ratio settings consist of registers ROW10 bit <0> (MSB) and ROW11 bits <4:7> (4 LSBs) 111 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 16 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz mmWAVE TRANSMITTER - CHIP Table 11. 500 MHz Channels Using 285.7143 MHz Reference Frequency (GHz) Divider Setting Typical Band Setting 57 00001 000 57.5 00010 000 58 00011 001 58.5 00100 001 59 00101 010 59.5 00110 010 60 00111 011 60.5 01000 011 61 01001 100 61.5 01010 100 62 01011 101 62.5 01100 101 63 01101 110 63.5 01110 110 64 01111 111 Divide Ratio settings consist of registers ROW10 bit <0> (MSB) and ROW11 bits <4:7> (4 LSBs) Table 12. Typical IF VGA and IF Upmixer Filter Settings Frequency (GHz) IF VGA Filter Setting (ifvga_tune) IF UPMIXER Filter Setting (if_upmixer_tune) 57-60 1000 1010 60-62 1011 1111 62-64 1111 1111 if_vga_tune settings consist of registers ROW6 bit <3:0> (4 MSBs) if_upmixer_tune settings consist of registers ROW7 <3:0> (4 MSBs) 17 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz Table 13. Pad Discriptions Function Pad Description BB_QM BB_QP BB_IM BB_IP Pads are DC coupled, matched to 50Ω (100Ω differential) FM_QM FM_QP Fm_IM FM_IP Pads are DC coupled, matched to 50Ω (100Ω differential) 31,33 REFCLKM REFCLKP Pads are DC coupled, matched to 50Ω (100Ω differential) 3,4 RFOUTM RFOUTP Pads are DC coupled, matched to 50Ω (100Ω differential) 12,14,18,20 22,23,25,26 Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] mmWAVE TRANSMITTER - CHIP Item 18 HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz mmWAVE TRANSMITTER - CHIP Table 14. Evaluation Kit Order Information 19 Item Part Number Description 1 EKIT01-HMC6450 60 GHz Antenna in Package Transceiver Evaluation Kit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC6000 v02.0514 Millimeterwave Transmitter IC 57 - 64 GHz The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a sharp pair of bent tweezers or use a top side vacuum tool to pick and place. The surface should not be touched with tweezers or fingers. Mounting The chip should be mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s recommendation. Wire Bonding RF bonds made with 0.003” (0.076mm) x 0.0005” (0.012mm) ribbon are recommended and should be thermosonically bonded. DC bonds of 0.001” (0.025 mm) diameter are recommended and should also be thermosonically bonded. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] mmWAVE TRANSMITTER - CHIP Mounting & Bonding Techniques for Millimeterwave SiGe Die 20