2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating RMS on-state current Average on-state current @ TC Peak one cycle surge @ 50 Hz Peak one cycle surge @ 60 Hz Fusing @ 50 Hz Symbol IT(RMS) IT(AV) TC ITSM I2t Fusing @ 60 Hz Gate current to trigger Typical critical dv/dt exponential to VDRM Critical rate of rise Typical junction temperature IGT dv/dt di/dt TJ 2N681-2N692 25 16 -65 to +65 145 150 103 2N5204-2N5207 35 22 -40 to +40 285 300 410 94 375 40 75-100 -65 to 125 40 100 100 -40 to 125 Unit A A °C A A A2s mA V/µs A/µs °C VOLTAGE RATINGS (Applied gate voltage zero or negative) Part Number 2N681 2N682 2N683 2N685 2N687 2N688 2N689 2N690 2N691 2N692 2N5204 2N5205 2N5206 2N5207 VRRM, VDRM Maximum repetitive peak reverse and off-state voltage (V) TJ = -65 to +125°C 25 50 100 200 300 400 500 600 700 800 TJ = -40 to 125°C 600 800 1000 1200 VRSM Maximum non-repetitive peak reverse voltage tp ≤ 5 ms (V) TJ = -65 to +125°C 35 75 150 300 400 500 600 720 840 960 TJ = -40 to 125°C 720 960 1200 1440 Rev. 20150526 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol IT(RMS) IT(AV) ITSM Characteristics Maximum RMS on-state current Maximum average on-state current @ TC = Maximum peak one cycle, non-repetitive surge current I2t Maximum I2t capability, for fusing I2t Maximum I2t capability for individual device fusing I √t Maximum I2√t capability for individual device fusing (1) VTM Maximum peak on-state voltage IH Maximum holding current 2 2N681-2N692 25 2N5204-2N5207 35 Units A 16 22 A -65 to +65 -40 to +40 °C 145 285 150 300 A 170 340 180 355 103 410 94 375 145 580 135 530 A2s A2s 2 1450 5800 A √s 2 2.3 V 20 @ 25°C 200 @-40°C mA Conditions 180° half sine wave conduction 50 Hz half cycle sine wave or 6 ms rectangular pulse 60 Hz half cycle sine wave or 5 ms rectangular pulse 50 Hz half cycle sine wave or 6 ms rectangular pulse 60 Hz half cycle sine wave or 5 ms rectangular pulse t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Following any rated load condition and with rated VRRM applied following surge Same conditions as above except with VRRM applied following surge = 0 Rated VRRM applied following surge, initial TJ = 125°C VRRM = 0 following surge, initial TJ = 125°C t = 0.1 to 10ms initial TJ ≤ 125°C, VRRM following surge = 0 TJ = 25°C, IT(AV) = 16A(50A peak) – 2N681 IT(AV) = 22A (70A) peak – 2N5204 Anode supply = 24V, initial IT= 1.0A BLOCKING 100 typical dv/dt Minimum critical rate of rise of offstate voltage 250 typical 100 250 V/µs TJ = 125°C exponential to 100% rated VDRM TJ = 125°C exponential to 67% rated VDRM Rev. 20150526 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 Symbol IR(-) & ID(-) Characteristics Maximum reverse and off-state current VRRM & VDRM = 2N681-2N692 IR(AV) & ID(AV) (average values) 2N5204-2N5207 IRM & IDM (peak values) - - Units mA Conditions TJ = 125°C, gate open circuited 25 to 150V 6.5 - 200 & 250V 6.0 - 300V 5.0 - 400V 4.0 - 500V 3.0 - 600V 2.5 3.3 700V 2.25 - 800V 2.0 2.5 1000V - 2.0 1200V - 1.7 1 1 µs TC = 25°C, VDM = rated VDRM, ITM = 10A dc resistive circuit. Gate pulse: 10 V, 40Ω source, tp = 6µs, tr = 0.1µs A/µs TC = 125°C, VDM = rated VDRM, ITM = 2 x di/dt, gate pulse: 20V, 15 Ω, tp = 6µs, tr = 0.1 µs maximum SWITCHING td Typical delay time di/dt Maximum non-repetitive rate of rise of turned-on current VDM = 25 to 600 V 100 - VDM = 700 to 800 V 75 - - 100 5 60 W TC = 125°C, VDM = 600V, ITM = 200A @ 400Hz max. Gate pulse: 20V, 15Ω, tp = 6µs, tr = 0.1µs max. TRIGGERING PGM Maximum peak gate power PG(AV) Maximum average gate power 0.5 0.5 W IGM Maximum peak positive gate current 2 2 A +VGM Maximum peak positive gate voltage 10 - V -VGM Maximum peak negative gate voltage 5 5 V IGT Maximum required DC gate current to trigger Typical DC gate current to trigger 80 80 mA tp ≤ 5ms – 2N681 tp ≤ 500µs – 2N5204 TC = min rated value. Max. required gate trigger current is the lowest value which will trigger all units with 6V anode to cathode 40 40 TC = 25°C 18.5 20 TC = 125°C 30 30 TC = 25°C, 6V anode to cathode Rev. 20150526 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 Symbol Characteristics Maximum required DC gate voltage to trigger VGT VGD 2N681-2N692 2N5204-2N5207 Units 3 3 V Conditions TC = -65°C. Max. required gate trigger voltage is the lowest value which will trigger all units with 6V anode to cathode 2 2 TC = 25°C Typical DC gate voltage to trigger 1.5 1.5 TC = 25°C 6V anode to cathode Maximum DC gate voltage not to trigger 0.25 0.25 V TC = 125°C. Max. gate voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode Note 1: I2t for time tx ≈ I2√t ● √tx THERMAL –MECHANICAL CHARACTERISTICS 2N681-2N692 2N5204-2N5207 Units TJ Operating junction temperature range -65 to 125 -40 to 125 °C Tstg Storage temperature range -65 to 125 -40 to 125 °C RthJC Maximum internal thermal resistance, junction to case 1.5 1.5 °C/W DC operation RthCS Thermal resistance, case to sink 0.35 0.35 °C/W Mounting surface smooth, flat and greased Symbol Characteristics Conditions Rev. 20150526 High-reliability discrete products and engineering services since 1977 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case Marking Pin out TO-48 Alpha-numeric See below Rev. 20150526 High-reliability discrete products and engineering services since 1977 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Rev. 20150526 High-reliability discrete products and engineering services since 1977 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Rev. 20150526 High-reliability discrete products and engineering services since 1977 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Rev. 20150526 High-reliability discrete products and engineering services since 1977 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Rev. 20150526