Schottky barrier diode RB160L-60 zDimensions (Unit : mm) zApplications General rectification zLand size figure (Unit : mm) 2.0 4 ① ② 0.1±0.02 0.1 4.2 5.0±0.3 3) High reliability 4 4.5±0.2 zFeatures 1) Small power mold type. (PMDS) 2) Low IR. 1.2±0.3 2.0 2.6±0.2 PMDS 2.0±0.2 1.5±0.2 zConstruction Silicon epitaxial planar zStructure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date zTaping specifications (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12± 0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75± 0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits Unit V V A A 60 60 1 30 125 -40 to +125 °C °C (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristics (Ta=25°C) Parameter Forward voltage Symbol VF Min. - Typ. - Max. 0.58 Unit V Reverse current IR - - 1 mA www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=1.0A VR=60V 2009.12 - Rev.C RB160L-60 Data Sheet zElectrical characteristics curves 10000 1000 1000 Ta=125°C f=1MH 1000 Ta=25°C 100 Ta=-25°C 10 1 Ta=75°C 100 10 Ta=25°C 1 Ta=-25°C 0.1 0.01 200 400 600 10 20 30 40 50 60 0 520 510 AVE:529.4 500 CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(uA) 530 Ta=25°C VR=60V n=30pcs 25 20 15 10 AVE:3.724 5 0 VF DISPERSION MAP 8.3ms 100 AVE:126.0A 0 25 30 Ta=25°C f=1MHz VR=0V n=10pcs 170 160 AVE:192.4pF 150 Ct DISPERSION MAP 200 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc RESERVE RECOVERY TIME : trr(ns) Ifsm 20 180 30 150 15 190 IR DISPERSION MAP 200 50 10 200 30 Ta=25°C IF=1A n=30pcs 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 550 540 10 1 0 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE : VF(mV) 100 0.001 0 PEAK SURGE FORWARD CURRENT : IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125°C REVERSE CURRENT : IR(uA) FORWARD CURRENT : IF(mA) Ta=75°C 15 10 AVE:11.7ns 5 Ifsm 150 8.3ms 8.3ms 1cyc 100 50 0 0 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 10 200 Ifsm t 150 100 50 0 2 Mounted on epoxy board Rth(j-a) 100 FORWARD POWER DISSIPATION : Pf(W) TRANSIENT THAERMAL IMPEDANCE : Rth (°C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) 1000 Rth(j-c) 10 IM=10mA IF=0.5A 1 1ms 10 TIME : t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 100 D=1/2 Sin(θ=180) 1 DC 0.5 tim 300us 0 0.1 1 1.5 0.001 0.1 10 TIME : t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2009.12 - Rev.C RB160L-60 Data Sheet 3 3 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0A 0.02 Sin(θ=180) 0.01 DC D=1/2 2.5 0V DC 2 VR t T D=t/T VR=30V Tj=125°C 1.5 D=1/2 1 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.03 2.5 5 10 15 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 20 D=t/T VR=30V Tj=125°C 1.5 D=1/2 1 0.5 Sin(θ=180) 0 0 0 VR T Sin(θ=180) 0 Io 0V t DC 2 0A 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(°C) Derating Curve"(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(°C) Derating Curve"(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 AVE:8.70kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 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