JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) JC(T EMD9 Dual Digital Transistors (NPN+PNP) FEATURES SOT-563 Two DTA114Y and DTC114Y transistors are built-in a package Marking: D9 DTr1 Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6~+40 V IO 70 IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Symbol Min Input voltage VI(off) VI(on) 0.3 Output voltage VO(on) Input current 0.1 II IO(off) DC current gain GI 68 Input resistance R1 7 Resistance ratio R2/R1 3.7 www.cj-elec.com fT Max Unit Conditions V VCC=5V ,IO=100μA VO=0.3V ,IO=1mA 0.3 V IO=5mA, II=0.25mA 0.88 mA 0.5 μA 1.4 Output current Transition frequency Typ VI=5V VCC=50V, VI=0 VO=5V ,IO=5mA 10 13 4.7 5.7 250 KΩ MHz 1 VO=10V ,IO=5mA,f=100MHz D,May,2015 DTr2 Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC -50 V Input voltage VIN -40~+6 V IO -70 IC(MAX) -100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Symbol Min Input voltage VI(off) VI(on) -0.3 Output voltage VO(on) Typ Max Conditions V VCC=-5V ,IO=-100μA VO=-0.3V ,IO=-1mA -0.3 V IO=-5mA,II=-0.25mA -1.4 -0.1 Unit II -0.88 mA VI=-5V Output current IO(off) -0.5 μA VCC=-50V, VI=0 DC current gain GI 68 Input resistance R1 7 10 13 Resistance ratio R2/R1 3.7 4.7 5.7 Input current Transition frequency www.cj-elec.com fT VO=-5V ,IO=-5mA 250 KΩ MHz 2 VO=-10V ,IO=-5mA,f=100MHz D,May,2015 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout www.cj-elec.com 3 D,May,2015 SOT-563 Tape and Reel www.cj-elec.com 4 D,May,2015