JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET V(BR)DSS 60 V RDS(on)MAX ID SOT-363 5Ω@10V 5.3Ω@4.5V 0.34A 8Ω@-10V -50 V 10Ω@-5V -0.18A DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS(ON). FEATURE z High-Side Switching z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: 75 Equivalent Circuit D1 6 G2 5 S2 4 1 2 3 S1 G1 D2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit N-Channel MOSFET VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Drain Current -Continuous 0.34 A Drain Current - Pulsed(Note1) 1.36 A ID IDM P- Channel MOSFET VDS Drain-Source Voltage -50 V VGS Gate-Source Voltage ±20 V -0.18 A -0.7 A Power Dissipation 0.15 W Thermal Resistance from Junction to Ambient (Note2) 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ 260 ℃ ID IDM Drain Current -Continuous Drain Current – Pulsed (Note1) Power Dissipation, Temperature and Thermal Resistance PD RθJA TL Lead Temperature www.cj-elec.com 1 A-5,Mar,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit N- Channel MOSFET Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA Zero gate voltage drain current IDSS VDS =48V,VGS = 0V Gate-body leakage current IGSS Gate threshold voltage (note 3) VGS(th) Drain-source on-resistance (note 3) RDS(on) Diode forward voltage VSD 60 V 1 µA VGS =±20V, VDS = 0V ±10 µA VGS =±10V, VDS = 0V ±200 nA VGS =±5V, VDS = 0V ±100 nA 1.3 2.5 VGS =4.5V, ID =0.2A 1.1 5.3 Ω VGS =10V, ID =0.5A 0.9 VDS =VGS, ID =1mA 1 IS=0.3A, VGS = 0V V 5 Ω 1.5 V 40 pF 30 pF 10 pF DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-off delay time Reverse recovery time td(on) VGS=10V,VDD=50V, 10 ns td(off) RL=250Ω,RGEN=50Ω, 15 ns trr Qr Recovered charge IS=300mA; dIS/dt=-100A/s;VGS=0V; VR=25V 30 ns 30 nC P- Channel MOSFET Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA -50 V VDS =-50V,VGS = 0V -15 µA VDS =-25V,VGS = 0V -0.1 µA IGSS VGS =±20V, VDS = 0V ±10 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =-250µA -1.62 -2 V Drain-source on-resistance (note 3) RDS(on) VGS =-5V, ID =-0.1A 5.5 10 Ω VGS =-10V, ID =-0.1A 4.1 8 Ω Forward transconductance (note 3) gFS Zero gate voltage drain current IDSS Gate-body leakage current VDS =-25V, ID =-0.1A -0.9 0.05 S DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 30 VDS =-5V,VGS =0V,f =1MHz Crss pF 10 pF 5 pF 2.5 ns 1 ns 16 ns 8 ns SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDD=-15V, RL=50Ω, ID =-2.5A tf SOURCE−DRAIN DIODE CHARACTERISTICS(note 4) IS -0.18 A Pulsed Current ISM -0.7 A Diode forward voltage (note 3) VDS -2.2 V Continuous Current IS=-0.13A, VGS = 0V Note: 1、 Surface mounted on FR-4 board using minimum pad size, 1oz copper 2、 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 、 Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2% 4、 These parameters have no way to verify. www.cj-elec.com 2 A-5,Mar,2016 Typical Characteristics N-Channel MOS Output Characteristics Transfer Characteristics 1.2 1.2 Ta=25℃ VDS=3V VGS=5V,6V,7V,10V Pulsed Pulsed (A) (A) VGS=4V DRAIN CURRENT DRAIN CURRENT ID ID 0.8 VGS=3V 0.4 0.0 0.8 Ta=100℃ Ta=25℃ 0.4 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 2 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON) —— VGS RDS(ON) —— ID 10 5 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 ( ) RDS(ON) 3 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( ) 4 2 VGS=4.5V ID=500mA 6 4 2 1 VGS=10V 0 0 0 300 600 900 DRAIN CURRENT ID 1200 1500 0 (mA) 2 4 8 VGS 10 (V) Threshold Voltage IS —— VSD 2 1 6 GATE TO SOURCE VOLTAGE 1.8 Pulsed VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.6 Ta=25℃ 0.01 1.4 ID=250uA 1.2 1.0 0.8 0.6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.2 1.4 0.4 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 ( ℃) A-5,Mar,2016 Typical Characteristics P-Channel MOS Output Characteristics Transfer Characteristics -0.6 -0.7 VDS=-10V VGS=-10V -0.6 VGS=-6V (A) -0.5 ID -0.4 DRAIN CURRENT DRAIN CURRENT ID (A) -0.5 VGS=-4.5V -0.3 VGS=-4V -0.2 VGS=-3V Ta=25℃ -0.4 Ta=100℃ -0.3 -0.2 -0.1 -0.1 VGS=-2.5V -0.0 -0.0 -0 -1 -2 -3 -4 -5 -6 -7 DRAIN TO SOURCE VOLTAGE -8 VDS -9 -10 -0 -1 (V) -2 -3 -7 VGS -8 -9 (V) 18 Pulsed 16 ( ) 8 14 VGS=-5V 7 RDS(ON) ( ) -6 20 Ta=25℃ RDS(ON) -5 RDS(ON) —— VGS RDS(ON) —— ID 10 9 -4 GATE TO SOURCE VOLTAGE ID=-0.1A 12 ON-RESISTANCE ON-RESISTANCE 6 5 4 VGS=-10V 3 10 Ta=100℃ 8 6 4 Ta=25℃ 2 1 -50 2 0 -100 -150 -200 -250 DRAIN CURRENT -300 ID -350 -400 -0 (mA) -1 -2 -3 -4 -5 -6 -7 GATE TO SOURCE VOLTAGE VGS -8 -9 -10 (V) Threshold Voltage IS —— VSD -1 -2.2 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -2.0 -0.1 Ta=100℃ Ta=25℃ -1.8 ID=-250uA -1.6 -1.4 -1.2 -1.0 -0.01 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.2 -1.4 -0.8 25 -1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 4 100 TJ 125 (℃ ) A-5,Mar,2016 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b c D E E1 e e1 L L1 Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0. 0.150 2.000 2.200 1.150 1.350 2.150 2.4 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.00 0.006 0.079 0.087 0.045 0.053 0.085 0.09 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW ZZZFMHOHFFRP5A-5,Mar,2016 6277DSHDQG5HHO SOT-363 Tape and reel SOT-363 Embossed Carrier Tape P0 C d P1 Packaging Description: SOT-363 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). B F W E A P A A A-A Dimensions are in millimeter Pkg type A B C d E F P0 P P1 W SOT-363 2.25 2.55 1.20 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 SOT-363 Tape Leader and Trailer Leader Tape Trailer Tape 50±2 Empty Pockets 100±2 Empty Pockets Components SOT-363 Reel D I G W2 3000 H 2500 2000 1500 1000 D2 D1 500 W1 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220 ZZZFMHOHFFRP6A-5,Mar,2016