BL8510D High Voltage Detector with Built-in Delay Circuit Features： ： Outline: BL8510D is a series of high precision voltage detector with ultra low current consumption (500nA typ. at VDD=VTH+1V) and a built-in delay circuit. It can work at very low voltage, which makes it perfect for system reset. BL8510D is composed of high precision voltage reference, comparator, delay circuit, output driver and resistor array. Internally preset detect voltage has a low temperature drift and requires no external trimming. Two type of output, CMOS and N-channel open-drain are available. BL8510D is available in SOT-23,SOT-23-3. Selection Guide： ： 8510D- XXX X X XX • • • • • • High-precision detection Voltage： ±2% Detection Voltage：1.6V~5.0V (in 0.1V steps) Built-in Power on Reset Delay Time circuit:: Refer to Selection Guide Operating Voltage range：1.0V~6.0V Ultra-low current consumption：0.9uA typ. (at VDD=3V) Two Output forms ：CMOS and N-channel opendrain (Active High) Application： ： • • • • • Power monitor for portable equipment such as PDA,DSC,Mobile phone,Notebook,MP3 CPU and Logic Circuit Reset Battery Checker Battery Back-up Circuit Power Failure Detector Pin Alignment： ： Package type： RM：SOT-23-3 RN：SOT-23-5 RO：SOT-23 Output type： N：Nch C：CMOS Delay time： A：240mS B：50mS C：100mS D：200mS E：400mS Detector voltage： 090……0.9V 100……1.0V 263……2.63V 293……2.93V 300……3.0V 465……4.65V …… 600……6.0V (In 0.1V step) http://www.belling.com.cn - 1Total 16 Pages 1/1/2013 BL8510D Product Mark Information： ： Top View： ：VZYW Product Name Top Side Mark(VZ) Output Type BL8510D-263 BL8510D-293 BL8510D-263 BL8510D-293 L1 L2 M1 M2 Nchannel Nchannel CMOS CMOS Means assembly year and weeks Year Y Week W 2010 0 1 A 2011 1 … … 2012 2 26 Z 2013 3 27 … … … … 52 Pin Description: PIN Number PIN Name Function VSS GND Pin 2 VOUT Voltage detection output Pin 3 VDD Voltage input Pin SOT-23 1 SOT-23-3 1 2 3 http://www.belling.com.cn - 2Total 11 Pages 1/1/2013 BL8510D Block diagram: N channel open-drain CMOS output Absolute Maximum Ratings： ： PARAMETER SYMBOL RATING UNIT Supply Voltage VDDmax 7 V Output Voltage RST GND-0.3 ～VDDmax+0.3 (CMOS Type) V GND-0.3 ～7 ( Open Drain Type) Input IDD 20 mA Current IOUT 20 mA Dissipation PD 150 (Not attached PCB) mW Operating Temperature Topr -40 ～ +105 ℃ Storage Temperature Tstg -65 ～ +150 ℃ Output Power Current Recommended Work Conditions： ： PARAMETER Operating Temperature http://www.belling.com.cn SYMBOL Topr RATING -40 ～ - 3Total 11 Pages +105 UNIT ℃ 1/1/2013 BL8510D Electrical Characteristics： ： Parameter Symbol Operating voltage VDD Supply Current IDD Test Condition MIN. TYP. MAX. Ta=0 to 70℃ 1.0 - 6.0 Ta=-40 to 105℃ 1.1 - 6.0 VDD=VTH+1V － 0.5 2.0 Ta=25℃ 4.584 4.630 4.676 Ta=-40 to 85℃ 4.500 - 4.750 Ta=85 to 105℃ 4.400 - 4.860 Ta=25℃ 4.336 4.380 4.424 Ta=-40 to 85℃ 4.250 - 4.500 Ta=85 to 105℃ 4.160 - 4.560 Ta=25℃ 3.049 3.080 3.111 Ta=-40 to 85℃ 3.000 - 3.150 Ta=85 to 105℃ 2.920 - 3.230 Ta=25℃ 2.901 2.930 2.959 Ta=-40 to 85℃ 2.850 - 3.000 Ta=85 to 105℃ 2.780 - 3.080 Ta=25℃ 2.604 2.630 2.656 VTH=4.63V VTH=4.38V VTH=3.08V Reset Threshold VTH VTH=2.93V VTH=2.63V Ta=-40 to 85℃ 2.550 - 2.700 Ta=85 to 105℃ 2.500 - 2.760 Ta=25℃ -1.0 - 1.0 Ta=-40 to 85℃ -2.5 - 2.5 Ta=85 to 105℃ -5.0 - 5.0 － 30 － VDD=VTH+1V, Isink=1.2mA VTH≦3.08V － － 0.3 VDD=VTH+1V, Isink=3.2mA VTH＞3.08V － VDD=VTH-0.1V Isink=500µA VTH≦3.08V 0.8*VDD VTH=1.6～ 5.0V (0.1V step) Reset Threshold Temp. Coefficient RST output voltage low (active H type) RST output voltage High (active H type) VTH/⊿T VOL Unit Circuit V ① µA ② V ① % ① ppm/℃ V － 0.4 ③ － － VOH V VDD=VTH-0.1V, Isink=800µA VTH＞3.08V VDD-1.5 － － (Note1)This device is tested at Ta=25℃, over temperature limits guaranteed by design only. (Note2)The parameter is guaranteed by design. Parameter Symbol Reset active timeout period tdel Tdel Rank A B C http://www.belling.com.cn MIN. TYP. MAX. Unit Circuit Ta=-40 to 85℃ 140 240 310 ms ④ Ta=85 to 105℃ 100 - 840 Ta=-40 to 85℃ 35 50 65 Ta=85 to 105℃ 25 - 98 Ta=-40 to 85℃ 70 100 130 Ta=85 to 105℃ 49 - 195 - 4Total 11 Pages 1/1/2013 BL8510D D E VDD to Reset Delay tTH Ta=-40 to 85℃ 140 200 260 Ta=85 to 105℃ 98 - 390 Ta=-40 to 85℃ 280 400 520 Ta=85 to 105℃ VDD=（VTH+1V） to (VTH-100mV) 196 - 780 － 20 － µs ④ (Note2) (Note1) This device is tested at Ta=25℃, over temperature limits guaranteed by design only . (Note2) The parameter is guaranteed by design. Test Circuit： ： http://www.belling.com.cn - 5Total 11 Pages 1/1/2013 BL8510D Timing Chart： ： VDD＜1V region is, it will be operating limits, The output is undefined. http://www.belling.com.cn - 6Total 11 Pages 1/1/2013 BL8510D Typical Performance Characteristics： ： Typical applications： ： Open drain OUTPUT CMOS OUTPUT Note： Please note that there is any possibility of circuit oscillation when resistance put in the line VIN. Load current and load resistance should be adjusted, which not over power dissipation level. We shall not be liable for any trouble or damage caused by using this circuit . In the event a problem which may affect industrial property or any other rights of us or a third party is encountered during the use of information described in these circuit, Mitsumi Electric Co., Ltd. shall not be liable for any such problem, nor grant a license therefore. http://www.belling.com.cn - 7Total 11 Pages 1/1/2013 BL8510D Package Outline： ： SOT-23: Package SOT23 Devices per reel 3000 Unit mm Devices per reel 3000 Unit mm Package dimension： SOT-23-3: Package SOT-23-3 Package dimension： http://www.belling.com.cn - 8Total 11 Pages 1/1/2013