FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Value Storage temperature range -55° to +200°C Maximum junction operating temperature +175°C Lead temperature +260°C Power dissipation Maximum total power dissipation at 25°C ambient Linear power derating factor (from 25°C) 250 mW 1.67 mW/°C Working inverse voltage FJT1100 FJT1101 25V 15V Continuous forward current 150 mA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol BV Characteristics Breakdown voltage Min FJT1100 FJT1101 FJT1100 Max Units Test Conditions V IR = 5.0µA 1.0 10 5.0 15 pA VR = 5.0V VR = 15V VR = 5.0V VR = 15V 30 20 IR Reverse current VF Forward voltage FJT1100 FJT1101 1.05 1.10 V IF = 50mA C Capacitance FJT1100 FJT1101 1.5 1.8 pF VR = 0, f = 1MHz FJT1101 Rev. 20150306 FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES High-reliability discrete products and engineering services since 1977 MECHANICAL CHARACTERISTICS Case DO-35 Marking Body painted, alpha-numeric Polarity Cathode band Rev. 20150306