HSC276A Silicon Schottky Barrier Diode for Mixer REJ03G0600-0100 (Previous: ADE-208-836) Rev.1.00 Apr 13, 2005 Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Name HSC276A S5 UFP Pin Arrangement Cathode mark Mark 1 S5 2 1. Cathode 2. Anode Rev.1.00 Apr 13, 2005 page 1 of 4 Package Code (Previous Code) PWSF0002ZA-A (UFP) HSC276A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Symbol VRRM Reverse voltage Average rectified current VR IO Junction temperature Storage temperature Tj Tstg Value 5 Unit V 3 30 V mA 125 −55 to +125 °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Symbol VR Min 3.0 Typ — Max — Unit V IR = 1 mA Reverse current Forward current Capacitance ESD-Capability * IR IF — 35 — — 50 — µA mA VR = 0.5 V VF = 0.5V C — — 30 — — 0.85 — pF V VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. Note: Failure criterion ; IR ≥ 100 µA at VR = 0.5 V Rev.1.00 Apr 13, 2005 page 2 of 4 Test Condition HSC276A 10-1 10-2 10-2 10-3 10-3 10 Ta= 75°C Ta= 25°C -4 10-5 Reverse current IR (A) Forward current IF (A) Main Characteristic 0 0.2 0.4 10-4 Ta= 25°C 10 0.6 0.8 1.0 -5 10-60 1.0 2.0 3.0 4.0 5.0 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz 10 Capacitance C (pF) Ta= 75°C 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.1.00 Apr 13, 2005 page 3 of 4 HSC276A Package Dimensions JEITA Package Code SC-79 RENESAS Code Previous Code PWSF0002ZA-A UFP / UFPV MASS[Typ.] 0.0016g D b E HE c l1 e1 A l1 b2 Pattern of terminal position areas Reference Symbol A b c D E HE b2 e1 l1 Rev.1.00 Apr 13, 2005 page 4 of 4 Dimension in Millimeters Min 0.50 0.25 0.08 0.70 1.10 1.50 Nom 0.60 0.30 0.80 1.20 1.60 0.80 1.70 0.60 Max 0.70 0.35 0.18 0.90 1.30 1.70 Sales Strategic Planning Div. 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