AOS Semiconductor Product Reliability Report AO3162, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3162. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO3162 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. -RoHS Compliant -Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AO3162 Standard sub-micron 600V N channel MOSFET Package Type SOT23A Lead Frame Cu Die Attach Ag Epoxy Bonding Cu wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO3162 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c - HTGB Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs HAST 130°°c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 100 hrs Pressure Pot 121°°c, 29.7psi, RH=100% 96 hrs Temperature Cycle -65°°c to 150°°c, air to air 250 / 500 cycles HTRB Lot Attribution Total Sample size Number of Failures 39 lots 5775 pcs 0 JESD22A113 308pcs 0 JESD22A108 77pcs / lot 308pcs 0 JESD22A108 (Note A*) 38 lots 77pcs / lot 2090 pcs 0 JESD22A110 (Note A*) 28 lots 55 pcs / lot 1540 pcs 0 JESD22A102 (Note A*) 39 lots 55 pcs / lot 2145 pcs 0 JESD22A104 (Note A*) 55 pcs / lot 1 lot Standard 3 lots (Note A*) 1 lot 3 lots Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 15704 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO3162). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x168+6x77x1000) x258] = 7 9 8 MTTF = 10 / FIT = 1.38 x 10 hrs = 15704 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K