1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions (Units : mm) zApplication High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. zFeatures 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. φ 0.5±0.1 C A 29±1 2.7±0.3 φ 1.8±0.2 29±1 ROHM : MSD EIAJ : − JEDEC : DO-34 zConstruction Silicon epitaxial planar 1N4148 / 1N4150 / 1N4448 CATHODE BAND (BLACK) Type No. φ 0.5±0.1 C A 29±1 3.8±0.2 φ 1.8±0.2 29±1 ROHM : GSD EIAJ : − JEDEC : DO-35 zAbsolute maximum ratings (Ta = 25°C) Type VRM (V) VR (V) IFM (mA) IO (mA) IF (mA) IFSM 1µs (A) P (mW) Tj (°C) Topr (°C) Tstg (°C) 1N4531 100 75 450 150 200 2 500 200 −65~+200 −65~+200 1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200 1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200 1N4448 100 75 450 150 200 2 500 200 −65~+200 −65~+200 zElectrical characteristics (Ta = 25°C) VF (V) Type @ @ 0.1mA 0.25mA BV (V) Min. @ @ @ @ @ @ @ 1mA 2mA 5mA 10mA 20mA 30mA 50mA @ @ @ 100mA 200mA 250mA 1N4531 @ 5µA 75 @ 100µA 100 1.0 1N4148 1.0 0.66 0.54 0.76 0.82 0.87 1N4150 0.74 0.62 0.86 0.92 0.62 1N4448 0.72 1.0 The upper figure is the minimum VF and the lower figure is the maximum VF value. 75 100 − 50 − 100 IR (µA) Max. @25°C VR (V) 0.025 20 5.0 75 0.025 20 5.0 75 0.1 50 0.025 20 5.0 75 trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100Ω Cr (pF) @150°C 50.0 20 4 4 50.0 20 4 4 100.0 50 2.5 4 50.0 20 4 4 1.0 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes zElectrical characteristic curves (Ta = 25°C) REVERSE CURRENT : IR (nA) 20 10 5 2 0.2 0 25°C Ta=75°C Ta=25°C Ta=−25 °C 1 0.5 100°C 3000 Ta=1 FORWARD CURRENT : IF (mA) 50 1000 70°C 300 50°C 100 30 Ta=25°C 10 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 FORWARD VOLTAGE : VF (V) 40 60 80 100 120 Fig. 2 Reverse characteristics 3 100 SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 2 1 PULSE Single pulse 50 20 10 5 2 0 0 10 20 1 0.1 30 FORWARD CURRENT : IF (mA) 10 5Ω 50Ω SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0.1IR 0 IR 1000 10000 Fig. 5 Surge current characteristics D.U.T. PULSE GENERATOR OUTPUT 50Ω 100 PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics 0.01µF 1 Fig. 6 Reverse recovery time (trr) measurement circuit 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics REVERSE RECOVERY TIME : trr (ns) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 Fig. 3 Capacitance between terminals characteristics Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0