AOK30B135W1 1350V, 30A Alpha IGBT General Description TM with Diode Product Summary • Latest AlphaIGBT (α IGBT) technology • Best in Class VCE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance VCE IC (TC=100°C) 1350V 30A VCE(sat) (TC=25°C) 1.8V Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View C TO-247 G AOK30B135W1 C E E G Orderable Part Number Package Type AOK30B135W1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE V GE Gate-Emitter Voltage Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Non repetitive peak collector currentA Turn off SOA, VCE ≤ 600V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case IC Form Minimum Order Quantity Tube 240 AOK30B135W1 1350 Units V ±30 60 V 30 A I Cpulse 120 A I CSM 200 A I LM 120 A 60 IF 30 I Fpulse PD T J , T STG TL Symbol R θ JA R θ JC R θ JC 120 340 170 A A W -55 to 175 °C 300 °C AOK30B135W1 40 0.44 Units °C/W °C/W 1.20 °C/W Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs Rev.2.0: January 2015 www.aosmd.com Page 1 of 8 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 1350 - - V V CE(sat) VGE=15V, IC=30A Symbol VF Collector-Emitter Saturation Voltage Diode Forward Voltage VGE=0V, IC=30A V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=1350V, VGE=0V TJ=25°C - 1.8 2.2 TJ=125°C - 2.3 - TJ=175°C - 2.5 - TJ=25°C - 1.6 1.9 TJ=125°C - 1.73 TJ=175°C - 1.74 - 4.7 5.15 5.9 TJ=25°C - - 10 TJ=125°C - - 800 TJ=175°C - - 8000 V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=30A - 31 - S - 1932 - pF - 107 - pF DYNAMIC PARAMETERS Input Capacitance C ies VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 32 - pF Qg Total Gate Charge - 62 - nC Q ge Gate to Emitter Charge - 13 - nC Q gc Gate to Collector Charge - 29 - nC - 1.75 - Ω TJ=25°C VGE=15V, VCE=600V, IC=30A, RG=10Ω, Parasitic Inductance=150nH - 129 - ns - 148 - ns - 1.47 - mJ TJ=175°C VGE=15V, VCE=600V, IC=30A, RG=10Ω, Parasitic Inductance=150nH - 154 - ns - 208 - ns - 1.63 - mJ VGE=15V, VCE=1080V, IC=30A VGE=0V, VCE=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: January 2015 www.aosmd.com Page 2 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 200 20V 17V 20V 120 17V 150 15V 13V 100 90 IC (A) IC (A) 15V 13V 11V 11V 60 9V 50 30 9V VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 4 5 6 7 100 100 VCE=20V -40°C 80 80 60 60 25°C IF (A) IC (A) 3 VCE(V) Fig 2: Output Characteristic (Tj=175°C ) VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 40 40 175°C 20 175°C 20 25°C -40°C 0 0 4 7 10 0.5 13 VGE(V) Fig 3: Transfer Characteristic 1.5 2.0 2.5 3.0 3.5 4.0 VF (V) Fig 4: Diode Characteristic 7 5 4 6 IC=60A VGE(TH)(V) VCE(sat) (V) 1.0 3 IC=30A 5 4 2 IC=15A 1 3 0 2 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: January 2015 www.aosmd.com 0 25 50 75 100 125 150 175 TJ (°C) Figure 6: VGE(TH) vs. Tj Page 3 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Cies VCE=1080V IC=30A 12 9 Capacitance (pF) VGE(V) 1000 6 3 Coes 100 0 10 Cres 1 0 10 20 30 40 50 60 70 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 350 300 Power Disspation (W) 250 200 150 100 50 0 25 50 75 100 125 150 175 TCASE(°C) Fig 10: Power Disspation as a Function of Case 60 50 Current rating IC(A) 40 30 20 10 0 25 50 75 100 125 150 175 TCASE(°C) Fig 11: Current De-rating Rev.2.0: January 2015 www.aosmd.com Page 4 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10000 Td(off) Td(off) Tf Tf Switching Time (nS) Switching Time (nS) 1000 100 10 1000 100 10 1 1 0 10 20 30 40 50 60 IC (A) Figure 12: Switching Time vs. IC (Tj=175°C,VGE=15V,VCE=600V,Rg=10Ω) 0 25 50 75 100 Rg (Ω) Figure 13: Switching Time vs. Rg (Tj=175°C,VGE=15V,VCE=600V,IC=30A) 125 10000 Td(off) Tf Switching Time (nS) 1000 100 10 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=600V,IC=30A,Rg=10Ω) Rev.2.0: January 2015 200 www.aosmd.com Page 5 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 Eoff Eoff Switching Energy (mJ) SwitchIng Energy (mJ) 4 3 2 1 0 3 2 1 0 0 10 20 30 40 50 IC (A) Figure 15: Switching Loss vs. IC (Tj=175°C,VGE=15V,VCE=600V,Rg=10Ω) 60 0 25 75 100 125 Rg (Ω) Figure 16: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=600V,IC=30A) 4 4 Eoff Eoff Switching Energ y (mJ) 3 Switching Energy (mJ) 50 2 1 0 3 2 1 0 0 50 100 150 200 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=600V,IC=30A,Rg=10Ω) Rev.2.0: January 2015 www.aosmd.com 200 300 400 500 600 700 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=30A,Rg=10Ω) Page 6 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-02 3 1.E-03 2.4 60A VCE=1350V VSD (V) ICE(S) (A) 1.E-04 1.E-05 1.8 30A 1.2 1.E-06 5A VCE=1080V 0.6 1.E-07 1.E-08 0 50 100 150 IF=1A 0 200 0 Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature 25 50 75 100 125 150 175 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.44°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: January 2015 www.aosmd.com Page 7 of 8 Rev.2.0: January 2015 www.aosmd.com Page 8 of 8