PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features (1) High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm) 2.9 0.4 0.95 0.45 0.2Min. SST3 1.3 2.4 (3) Packaging specifications Package Type (2) Taping Code T116 Basic ordering unit (pieces) 3000 (1) 0.95 0.95 0.15 1.9 (1)Emitter (2)Base (3)Collector BCX17 Each lead has same dimensions Abbreviated symbol : GT1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-emitter voltage (VBE=0) VCES −50 V Collector-emitter voltage (open base) VCEO −45 V Emitter-base voltage V VEBO −5 Collector current IC −0.5 A Collector current (peak value) ICM −1 A 0.2 W Collector power dissipation PC 0.35 W ∗ 0.425 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −65 to 150 °C ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE ∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCES −50 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −45 − − V IC= −10mA BVEBO −5 − − V IE= −50μA ICBO − − −0.1 μA VCB= −20V Parameter Emitter-base breakdown voltage Collector-base cutoff current Symbol Conditions IEBO − − −10 μA VEB= −5V Collector-emitter saturation voltage VCE(sat) − − −0.62 V IC/IB= −500mA/ −50mA Base-emitter voltage VBE(on) V VCE/IC= −1V/ −500mA Emitter-base cutoff current DC current transfer ratio Transition frequency Collector-base cutoff current − − −1.2 100 − 600 70 − − 40 − − fT − 200 − MHz ICBO − − −5 μA hFE www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ VCE= −1V, IC= −100mA − VCE= −1V, IC= −300mA VCE= −1V, IC= −500mA 1/2 VCE= −5V, IE= −20mA, f=100MHz VCB= −20V, Ta=150°C 2011.09 - Rev.B Data Sheet BCX17 −200 −100 −50 −20 −10 −5 −2 −1 −0.5 −0.4 −0.8 −1.2 −160 Grounded emitter propagation characteristics 1k Ta=25°C 500 200 100 VCE= −3V −2V −1V 50 20 10 5 2 1 −1m −10m −100m −1 COLLECTOR CURRENT : IC (A) Fig.4 −0.7mA −120 −0.6mA −100 −0.5mA −80 −0.4mA −60 −0.3mA −0.2mA −40 −0.1mA IB=0mA −4 Fig.2 −8 −12 −16 −100 IC/IB=50 20 10 −10 −5 −2 −10m −100m A A −4m mA −200 IB= −2 −100 −0.2 −0.4 −0.6 −1 Ta=25°C −0.8 −1.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter output characteristics ( ) Ta=25°C VCE= −5V 500 200 100 50 20 10 5 2 1 1m COLLECTOR CURRENT : IC (A) Collector-emitter saturation voltage vs. collector current A −8m 1000 −200 −1 −1m mA −10 −6m Fig.3 Ta=25°C −20 mA −12 −300 0 0 −20 −500 −50 −14mA −16mA −18mA −400 −20mA Grounded emitter output characteristics ( ) −1000 Fig.5 DC current gain vs. collector current 1000 −0.8mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) Fig.1 −500 −140 0 0 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE A −1.0m −0.9mA −20 −0.2 −0.1 0 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C −180 COLLECTOR CURRENT : IC (mA) −200 Ta=25°C VCE=6V TRANSITION FREQUENCY : fT (MHz) −1000 −500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Electrical characteristics curves 10m 100m 1 EMITTER CURRENT : IE (A) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IE=0A 500 200 100 Cib 50 Cob 20 10 5 2 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2011 ROHM Co., Ltd. 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