Applications • High isolation switching • Detection • Mixing • Voltage control Miniature 0402 Surface Mount Technology Packaged RF Diodes Features Skyworks offers a variety of 0402 surface mount technology (SMT) diodes including PIN diodes for switch and attenuator applications, limiter diodes for receiver protection applications, Schottky diodes for detector and mixer applications and tuning varactor diodes for VCO, voltage tuned filters and phase shifter applications. These small form factor devices offer low parasitic inductance and low thermal impedance, making them ideal for a variety of markets including WLAN, WiMAX, cellular handset, cellular infrastructure, automotive, CATV/Satcom, smart energy, medical, military, RFID, and test and measurement. • Low parasitic inductance 0.45 nH PIN Diodes for Switch and Attenuator Applications • Tuning • Phase shifting • Receiver protection • Low thermal impedance 50° C/W Part Number SMP1345-040LF High Isolation Switching Very Low Capacitance (0.13 pF), Isolation 40 dB • Small form factor 1.0 x 0.6 x 0.46 mm SMP1340-040LF Fast Switching/High Isolation Low Capacitance, Fast Switching SMP1321-040LF High Isolation Low Capacitance SMP1320-040LF Moderate Power Switching Low Capacitance, Low Resistance SMP1352-040LF High Power Switching Low Distortion SMP1322-040LF High Isolation Switching Low Resistance (0.5 W Typ.) SMP1302-040LF Attenuator Low Distortion, Low Drive Current • Frequency range 10 MHz–12 GHz Feature/Application Characteristics Limiter Diodes for Receiver Protection Applications Part Number SMP1330-040LF Feature/Application Low Capacitance, Low Threshold Level Characteristics Fast Recovery Time (5 ns Typ.) Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Schottky Diodes for Detector and Mixer Applications Part Number Feature/Application Characteristics SMS7621-040LF High Sensitivity Detector Low Barrier Height, Low Capacitance SMS7630-040LF Most Sensitive Detector Lowest Barrier Height, Low Capacitance SMS3922-040LF Higher Input Power Medium Barrier Height SMS3923-040LF Higher Input Power Medium Barrier Height SMS3924-040LF High Sensitivity Detector Medium/High Barrier, High Voltage Breakdown SMS3925-040LF High Sensitivity/High Input Power High Barrier Height Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications Part Number Feature/Application Characteristics SMV1213-040LF Low Series Resistance, High Tuning Range Capacitance (19 pF @ 1.0 V, 5.5 pF @ 4.0 V), RS (1.4 Ω) SMV1248-040LF High Tuning Range Capacitance (11.3 pF @ 1.0 V, 1.57 pF @ 4.0 V), RS (2.0 Ω) SMV1253-040LF High Capacitance, Low Series Resistance Capacitance (33.6 pF @ 1.0 V, 4.13 pF @ 4.0 V), RS (0.8 Ω) SMV1255-040LF Low Series Resistance, High Tuning Range Capacitance (34.0 pF @ 1.0 V, 5.8 pF @ 4.0 V), RS (0.8 Ω) SMV1430-040LF Low Capacitance, Abrupt Junction Capacitance (0.91 pF @ 1.0 V, 0.60 pF @ 4.0 V), RS (2.7 Ω) SMV2019-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.55 Typ.) Capacitance (1.43 pF @ 1.0 V, 0.23 pF @ 20.0 V), Q (500) SMV1231-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.65 Typ.) Capacitance (1.49 pF @ 1.0 V, 0.71 pF @ 4.0 V), RS (2.9 Ω) SMV1232-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.70 Typ.) Capacitance (2.52 pF @ 1.0 V, 1.18 pF @ 4.0 V), RS (1.2 Ω) SMV1233-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.70 Typ.) Capacitance (3.34 pF @ 1.0 V, 1.53 pF @ 4.0 V), RS (1.2 Ω) SMV1234-040LF Low Series Resistance, High Tuning Range Capacitance (6.57 pF @ 1.0 V, 2.87 pF @ 4.0 V), RS (0.8 Ω) SMV1235-040LF Low Series Resistance, High Tuning Range Capacitance (11.56 pF @ 1.0 V, 5.05 pF @ 4.0 V), RS (0.6 Ω) SMV1236-040LF Low Series Resistance, High Tuning Range Capacitance (16.95 pF @ 1.0 V, 7.50 pF @ 4.0 V), RS (0.35 Ω) SMV1405-040LF Low Capacitance, High Q, Abrupt Junction Capacitance (2.8 pF @ 0 V, 0.56 pF @ 30.0 V), Q (3200) SMV1705-040LF Low Series Resistance, High Tuning Range Capacitance (18.49 pF @ 1.0 V, 6.13 pF @ 4.0 V), RS (0.3 Ω) SMV1247-040LF Low Capacitance, High Q Capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), Q (1500) SMV1763-040LF Low Capacitance, Low Series Resistance Capacitance (6.7 pF @ 0.5 V, 2.6 pF @ 1.5 V), RS (0.7 Ω) SMV1249-040LF Wide Tuning Range Capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V), CTR (12:1) Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. PIN Diodes Switching Applications PIN diodes are some of the most widely used diodes in the world and range in applications from RF switching in satellite television receiver low noise block converters (LNB), to automotive remote garage door openers, to land mobile radio transceivers and cable television automatic level controls. The circuit below shows a pair of PIN diodes used to form a single pole, double throw switch. In this switch, a positive control current typically of the order of 10 mA is applied to one of the bias inputs to place that side of the switch into its low insertion loss state, while a negative bias voltage is applied to the other bias input, forcing the diode on that side of the switch into its maximum RF impedance state to produce high isolation on that side of the switch. PIN diodes are three layer diodes, comprised of a heavily doped anode (the “P” layer) and a heavily doped cathode (the “N” layer) separated by a virtually undoped intrinsic layer (the “I” layer). Under forward bias, charge carriers from the P and the N layers are forced into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing its RF impedance to increase. This variable RF impedance versus DC, or low frequency bias signal, allows the diode to be used in RF switching circuits in which the PIN diode is either heavily forward-biased or reverse biased. In RF attenuation circuits, the PIN diode is utilized as a continuously-variable RF resistance by controlling the magnitude of the DC bias current through the diode. RF Common ICTRL1 L1 I CTRL2 C1 J1 Wide Bandwidth Single Pole Double Throw Switch RF Common Bias 1 RF Choke SMP1345 -040LF Bias 2 RF Choke SMP1345 -040 LF RF Choke C FILTER RF #1 RF #2 C BLOCK C BLOCK SMP1321-040LF C3 J1 J2 D1 SMP1345-040LF D2 L2 SMP1345-040LF The diagrams below show an attenuator that utilizes three PIN diodes. Many other PIN diode circuit configurations are also possible. Please refer to “Design with PIN Diodes” available on our Web site at www.skyworksinc.com for more information. C BLOCK C FILTER L3 C2 C1 A resistive attenuator can be built utilizing one or more PIN diodes. In this type of circuit, the RF resistance of the PIN diode is adjusted to a desired value by varying the magnitude of the DC bias current applied to the diode. This resistance produces attenuation. J2 D2 L2 L1 ICTRL2 Attenuation Applications C3 D1 RF Common ICTRL1 Typical SPDT Switch L3 C2 Many other switching circuit variations exist. Please refer to “Design with PIN Diodes” available on our Web site at www.skyworksinc.com for more information. SMP1321-040LF High Isolation PIN Diode Single Pole Double Throw Switch 100 Series Resistance (W) R3 R2 R1 D3(RS3) RF Input RF Output D2(RS2) D1(RS1) SMP1321 10 SMP1320 1 0.1 0.1 1 10 100 Forward Current (mA) Series Resistance vs. Forward Current Pi Attenuator 100 Series Resistance (W) Series Resistance (W) 100 10 SMP1322 1 10 SMP1345 SMP1340 1 0.1 0.1 0.01 0.1 0.1 1 10 1 100 10 100 Forward Current (mA) Forward Current (mA) Series Resistance vs. Forward Current 1000 1000 100 100 10 Series Resistance (Ω) Series Resistance (W) Series Resistance vs. Forward Current SMP1352 1 0.1 0.01 0.1 1 10 Forward Current (mA) Series Resistance vs. Forward Current 100 SMP1302 10 1 0.1 0.01 0.1 1 10 Forward Current (mA) Series Resistance vs. Forward Current 100 PIN Diodes for Switch and Attenuator Applications Part Number Product Description Key Features SMP1345-040LF High Isolation Switching PIN Diode Very Low Capacitance 0.14 pF, Isolation 40 dB SMP1340-040LF Fast Switching/High Isolation PIN Diode Low Capacitance, Low Series Resistance SMP1321-040LF High Isolation (LNB/Multiswitch) PIN Diode Low Capacitance, Series Pair SMP1320-040LF Moderate Power Handling Low Capacitance, Low Resistance SMP1352-040LF High Power Switching Lower Distortion SMP1322-040LF High Isolation Switching Low Resistance (0.5 W Typ.) SMP1302-040LF Attenuator Low Distortion/Low Drive Current Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Electrical Specifications Part Number Max. VR IR = 10 µA (V) CT VR = 30 V (pF) CT VR = 5 V (pF) CT VR = 20 V (pF) Typ. VF IF = 10 mA (V) RS IF = 1 mA F = 100 MHz (W) Max. RS IF = 10 mA F = 100 MHz (W) RS IF = 100 mA F = 100 MHz (W) Typ. Carrier Lifetime IF = 10 mA (ns) SMP1345-040LF 50 – 0.20 Max. – 0.89 3.5 Typ. 2.0 – 100 SMP1340-040LF 50 – 0.30 Max. – 0.85 – 1.2 – 100 SMP1321-040LF 100 0.025 Max. – – 0.85 3.0 Typ. 2.0 – 400 SMP1320-040LF 50 0.25 Max. – – 0.85 2.0 Typ. 0.9 – 400 SMP1352-040LF 200 – – 0.30 Max. 0.80 15 Max. 2.8 1.35 Max. 1000 SMP1322-040LF 50 1.0 Max. – – 0.85 1.5 Max. 0.5 Typ, – 400 SMP1302-040LF 200 0.30 Max. – – 0.80 20 Max. 3.0 1.5 Max. 700 Limiter Diodes Output Power (dBm) The PIN limiter diode can be described as an incident power controlled, variable resistor. In the case when no large input signal is present, the impedance of the limiter diode is at its maximum, thereby producing minimum insertion loss, typically less than 0.5 dB. The presence of a large input signal temporarily forces the impedance of the diode to a much lower value, producing an impedance mismatch which reflects the majority of the input signal power back towards its source. Limiter Output 30 1 dB 10 0 Threshold Level -10 -10 Input Limiting Operation Low Insertion Loss Operation 20 0 10 20 30 Input Power (dBm) DC Block DC Block Pin-IL Output Output Power vs. Input Power for a Single Stage Limiter RF Choke SMP1330-040LF A Single Stage Limiter Limiter Diodes for Receiver Protection Applications Part Number Feature/Application Characteristics Low Capacitance, Low Threshold Level SMP1330-040LF Fast Recovery Time (5 ns Typ.) Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Electrical Specifications Part Number SMP1330-040LF VB IR = 10 µA (V) I Region Thickness (µm) Nominal CT (pF) 0 V, F = 1 MHz CT (pF) 0 V, F = 1 GHz RS IF = 10 mA F = 100 MHz (W) Carrier Lifetime TL (ns) IF = 10 mA 20–50 2 0.7 Typ., 1.0 Max. 0.7 Typ. 1.25 Typ., 1.9 Max. 4.0 Typ. Schottky Diodes SMS7621-040LF Schottky Detector Diode Schottky diodes are optimized for use in detector and mixer applications at frequencies from below 10 MHz to higher than 20 GHz. Skyworks’ family of products include medium, low and zero bias detector (ZBD) barrier height Schottky junctions with low junction capacitance and low series resistance. The SMS7621-040LF combines low capacitance (nominally 0.2 pF) and low barrier height to produce a detector diode with excellent sensitivity. SMS7621-040LF 50 Ω Schottky junctions are formed by depositing specific metals on either n-doped silicon (low or medium barrier height) or on p-doped silicon (ZBD barrier height). The characteristics of the diode are determined by the type of metal deposited on the semiconductor material, as well as the type of dopant in the semiconductor layer, among other parameters. Detected Output RF Input RF Choke Filter Capacitor Filter Resistor 100 pF 1k Ω Broadband Detector Circuit Broadband Detector Circuit 0.6 0.5 Forward Voltage (V) Schottky Detector Diode Detected Voltage Output RF Input SMS7621-040LF 0.4 0.3 SMS7630-040LF 0.2 0.1 0 Single Schottky Diode Detector 0 2 4 6 8 10 12 14 16 18 20 Forward Current (mA) 0.50 0.45 0.40 SMS3922 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 2 4 Forward Voltage (V) Forward Voltage (V) Forward Voltage vs. Forward Current 6 8 10 12 14 16 Forward Current (mA) Forward Voltage vs. Forward Current 18 20 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 SMS3923 0 5 10 15 20 25 Forward Current (mA) Forward Voltage vs. Forward Current 30 35 0.8 0.7 0.7 0.6 Forward Voltage (V) Forward Voltage (V) 0.8 SMS3924-040LF 0.5 0.4 0.3 0.2 0.1 0 0.6 SMS3925-040LF 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 12 14 0 16 Forward Current (mA) 0 2 4 6 8 10 12 Forward Current (mA) Forward Voltage vs. Forward Current (TA = 25°C) Forward Voltage vs. Forward Current (TA = 25°C) Schottky Diodes for Detector and Mixer Applications Part Number Feature/Application Characteristics SMS7621-040LF High Sensitivity Detector Low Barrier Height and Low Capacitance SMS7630-040LF Most Sensitive Detector Lowest Barrier Height, Low Capacitance SMS3922-040LF Higher Input Power Medium Barrier Height SMS3923-040LF Higher Input Power Medium Barrier Height SMS3924-040LF High Sensitivity/High Input Power Medium/High Barrier Height SMS3925-040LF High Sensitivity High Barrier Height Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Electrical Specifications VB IR = 10 µA (V) Max. VF IF = 1 mA (mV) Max. CT VR = 0 V (pF) Typ. RT IF = 5 mA F = 100 MHz (W) Typ. RV (W) SMS7621-040LF 2 Min. 320 0.25 18 – SMS7630-040LF 1 Min.* 240 0.35 – 5k SMS3922-040LF 8 Min. 340 1.03 9 – SMS3923-040LF 20 Min. 370 1.23 10 – SMS3924-040LF 70 Min. 550 2.25 7 @ 10 mA – SMS3925-040LF 40 Min. 650 0.42 10 @ 10 mA – Part Number *IR = 100 µA Tuning Varactor Diodes RF In Skyworks series of silicon tuning varactor diodes are used as the electrical tuning elements in voltage controlled oscillators (VCOs), voltage variable analog phase shifters and voltage tuned filters (VTFs). This family of diodes includes abrupt junction tuning varactors, useful for low loss, narrow band circuits, and hyperabrupt junction varactors, useful for wide bandwidth VCOs and VTFs as well as wide phase range variable phase shifters. VCONTROL V CONTROL Phase Shifter Diagram Tuning varactors are PN junction diodes. The depletion region that forms at the junction of the diode acts as a nearly-ideal insulator, which separates the highly-doped anode from the cathode layer, thus forming a parallel plate capacitor. The thickness of the depletion layer can be increased by applying a reverse bias voltage to the diode. V CONTROL RF Input RF Output Resonators Voltage Tuned Filter Diagram SMV1249-040LF SMV1213-040LF SMV1248-040LF 90 SMV1253-040LF SMV1255-040LF SMV1705-040LF 80 70 Capacitance (pF) The cathode layer’s doping profile is very carefully designed to produce a tightly controlled capacitance versus reverse bias voltage performance characteristic. The cathode layer of an abrupt junction diode has uniform dopant concentration throughout its thickness, which results in a low series resistance and moderately large change in capacitance versus bias voltage. By contrast, the doping concentration of cathode layer of hyperabrupt varactor diode is designed to change by several orders of magnitude, typically over the depth of a few microns. This non-constant dopant concentration versus depth of the hyperabrupt diode’s cathode layer produces a much larger available change in capacitance versus reverse voltage, necessary for wide bandwidth or phase shift range applications. RF Out 60 50 40 30 20 10 VCC Varactor Common Cathode Pair VR 0 0 2 4 6 8 10 12 14 16 Reverse Voltage (V) RF Choke C2 L Typical Voltage Controlled Oscillator with a Common Cathode Pair of Tuning Varactors Capacitance vs. Reverse Voltage 18 20 SMV1247-040LF SMV1763-040LF SMV2019-040LF SMV1231-040LF SMV1232-040LF SMV1430-040LF 3.0 25 2.5 20 2.0 Capacitance (pF) Capacitance (pF) 30 SMV1233-040LF SMV1234-040LF SMV1235-040LF SMV1236-040LF 15 10 SMV1405-040LF 1.5 1.0 0.5 5 0 0 0 5 10 15 20 25 30 Reverse Voltage (V) Capacitance vs. Reverse Voltage 0 5 10 15 20 25 30 Reverse Voltage (V) Capacitance vs. Reverse Voltage Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications Part Number Feature/Application Characteristics SMV1213-040LF Low Series Resistance, High Tuning Range Capacitance (19 pF @ 1.0 V, 5.5 pF @ 4.0 V), RS (1.4 Ω) SMV1248-040LF High Tuning Range Capacitance (11.3 pF @ 1.0 V, 1.57 pF @ 4.0 V), RS (2.0 Ω) SMV1253-040LF High Capacitance, Low Series Resistance Capacitance (33.6 pF @ 1.0 V, 4.13 pF @ 4.0 V), RS (0.8 Ω) SMV1255-040LF Low Series Resistance, High Tuning Range Capacitance (34.0 pF @ 1.0 V, 5.8 pF @ 4.0 V), RS (0.8 Ω) SMV1430-040LF Low Capacitance, Abrupt Junction Capacitance (0.91 pF @ 1.0 V, 0.60 pF @ 4.0 V), RS (2.7 Ω) SMV2019-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.55 Typ.) Capacitance (1.43 pF @ 1.0 V, 0.23 pF @ 20.0 V), Q (500) SMV1231-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.65 Typ.) Capacitance (1.49 pF @ 1.0 V, 0.71 pF @ 4.0 V), RS (2.9 Ω) SMV1232-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.70 Typ.) Capacitance (2.52 pF @ 1.0 V, 1.18 pF @ 4.0 V), RS (1.2 Ω) SMV1233-040LF High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.70 Typ.) Capacitance (3.34 pF @ 1.0 V, 1.53 pF @ 4.0 V), RS (1.2 Ω) SMV1234-040LF Low Series Resistance, High Tuning Range Capacitance (6.57 pF @ 1.0 V, 2.87 pF @ 4.0 V), RS (0.8 Ω) SMV1235-040LF Low Series Resistance, High Tuning Range Capacitance (11.56 pF @ 1.0 V, 5.05 pF @ 4.0 V), RS (0.6 Ω) SMV1236-040LF Low Series Resistance, High Tuning Range Capacitance (16.95 pF @ 1.0 V, 7.50 pF @ 4.0 V), RS (0.35 Ω) SMV1405-040LF Low Capacitance, High Q, Abrupt Junction Capacitance (2.8 pF @ 0 V, 0.56 pF @ 30.0 V), Q (3200) SMV1705-040LF Low Series Resistance, High Tuning Range Capacitance (18.49 pF @ 1.0 V, 6.13 pF @ 4.0 V), RS (0.3 Ω) SMV1247-040LF Low Capacitance, High Q Capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), Q (1500) SMV1763-040LF Low Capacitance, Low Series Resistance Capacitance (6.7 pF @ 0.5 V, 2.6 pF @ 1.5 V), RS (0.7 Ω) SMV1249-040LF Wide Tuning Range Capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V), CTR (12:1) Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Electrical Specifications Min. Reverse Breakdown Voltage, VR IR = 10 μA (V)" Typ. Total Capacitance3, CT VR = 1 V (pF) Typ. Total Capacitance3, CT VR = 4 V (pF) Typ. Total Capacitance3, CT VR = 8 V (pF) Min. Total Capacitance Ratio Capacitance Ratio Range (V) Max. Series Resistance, RS (Ω) SMV1213-040LF 12 19.13 3.87 2.4 2 1.0 to 2.5 1.4 Typ. @ 3.0 V SMV1248-040LF 15 11.31 1.57 1.21 10.8 0.3 to 4.7 3.3 @ 3.0 V SMV1253-040LF 15 33.69 4.63 3.4 11 0.3 to 4.7 1.4 @ 3.0 V SMV1255-040LF 15 39.95 5.79 3.94 11 0.3 to 4.7 1.3 @ 3.0 V SMV1430-040LF 30 0.91 0.6 0.47 3.8 0 to 30 2.7 Typ. @ 4.0 V SMV2019-040LF 22 1.43 0.75 0.39 2.1 4 to 20 Q @ 4 V = >500 SMV1231-040LF 15 1.49 0.71 0.43 1.45 1 to 3.0 2.9 @ 3.0 V SMV1232-040LF 15 2.52 1.18 0.71 1.5 1 to 3.0 1.5 @ 3.0 V SMV1233-040LF 15 3.34 1.53 0.93 1.5 1 to 3.0 1.2 @ 3.0 V SMV1234-040LF 15 6.57 2.87 1.75 1.6 1.0 to 3.0 1.2 @ 3.0 V SMV1235-040LF 15 11.67 4.99 2.91 1.6 1.0 to 3.0 0.6 @ 3.0 V SMV1236-040LF 15 17.02 7.19 4.49 1.6 1.0 to 3.0 0.5 @ 3.0 V SMV1405-040LF 30 1.95 1.26 0.97 2.8 0 to 30 V 0.8 @ 4.0 V SMV1705-040LF 12 18.49 6.13 4.08 2.8 1.0 to 4.0 0.32 Typ. @ 1.0 V SMV1247-040LF 15 4.37 0.77 0.64 9.5 0.3 to 4.7 2.6 Typ. @ 3.0 V SMV1763-040LF 10 5.13 1.44 1.15 2.3 0.5 to 2.5 0.7 Typ. @ 1.0 V SMV1249-040LF 15 18.18 2.72 2.03 11.0 0.3 to 4.7 1.2 Typ. @ 3.0 V Part Number 0402 Package Information 0.650 PCB Pad Metalization 2X 2X 0.25 ± 0.05 1.000 Bottom View 0.46 +0.04/–0.06 1.200 0.350 0.475 Part Outline 0.650 Cathode Indicator Top View Cathode Terminal Side View 0.05/0.00 0.475 0.600 2X 0.50 ± 0.05 PCB Solder Mask Opening 0.325 0.750 All dimensions in millimeters All measurements in millimeters Package Dimensions PCB Layout Footprint 4.00 ± 0.10 Cathode Indicator 0.20 ∅1.55 ± 0.05 (D0) 1.75 ± 0.10 3.50 ± 0.05 1.15 ± 0.05 (Bo) A 8.00 ± 0.1 2.00 ± 0.05 S1892 S1997 ∅0.40 ± 0.05 (D1) 0.47 ± 0.05 (Ko) 2.00 ± 0.05 B B A A 0.70 ± 0.05 (A0) Notes: 1. Carrier tape: black conductive polycarbonate. 2. Cover tape: transparent conductive material. 3. Cover tape size: 5.4 mm width. 4. ESD surface resistivity is ≥1 x 104 ~ ≤ 1 x 108 Ohms/square. 5. All dimensions are in millimeters. B S1922 Tape and Reel Dimensions Green Initiative™ Through our Green Initiative,™ we are committed to manufacturing products that comply with global government directives and industry requirements. Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and information about Skyworks, visit our Web site at www.skyworksinc.com For additional information on our broad overall product portfolio, please contact your local sales office or email us at [email protected]. Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA 01801 USA: (781) 376-3000 • Asia: 886 2 2735 0399 Europe: 33 (0)1 43548540 • Fax: (781) 376-3100 Email: [email protected] • www.skyworksinc.com BRO391-12A 2/12 Printed on Recycled Paper.