PB123_15A_9_15.pdf

Product Brief
Markets
• Internet of Things (IoT)
• Aerospace and defense
•WiFi
•Automotive
- Skyworks offers
AEC-Q101 qualified diodes
• Smart energy and
connected home
• Cellular telephone
infrastructure and handsets
• Remote meter reading for the
smart grid
• Test and measurement
• Military communications
• Cable television (CATV)
PIN, Limiter, Schottky,
Varactor Diodes
Select diodes available from stock for prototype or
high-volume production
Skyworks Solutions offers a select group of diodes from our diverse diode offering in
stock and ready for immediate design into your demanding applications.
Select diodes include the most popular PIN, limiter, Schottky and tuning varactor
diodes, readily available to ship from stock. These devices provide excellent
performance and even better value for applications including smart energy,
multiswitches, wireless local area networks (WLAN), cellular telephone networks,
cable television (CATV), automotive, test and measurement equipment, land mobile
radio and more.
PIN Diodes for Switch and Attenuator Applications
Part Number
Features
Markets
• Point-to-point microwave
radios
Switching PIN Diodes
SMP1345-040LF
High isolation, fast switching
WLAN, infrastructure, general
• Land mobile radio systems
SMP1320-040LF
Fast switching, high isolation,
low insertion loss
WLAN, infrastructure, general
• LTE
SMP1352-079LF
Large signal
Infrastructure, general
•Wearables
SMP1302-085LF
High power (50 W) handling, shunt
Land mobile radio, LTE base station, and more
SMP1325-087LF
High power (35 W) handling, series
Land mobile radio, LTE base station, and more
SMP1331-085LF
High power (50 W) handling, series
Infrastructure, CATV, military, aerospace and more
SMP1304-085LF
Low capacitance, low distortion,
single shunt
Infrastructure, CATV, military, aerospace
and more
SMP1307-004LF
Low distortion / high IP3, dual
CATV, PON, base station, and more
SMP1307-027LF
Low distortion / high IP3, quad
CATV, PON, base station, and more
Attenuator PIN Diodes
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Skyworks Green™ products are compliant to all applicable materials legislation and
are halogen-free. For additional information, please refer to Skyworks Definition of Green™,
document number SQ04-0074.
Limiter Diodes for Receiver Protection Applications
Part Number
Features
Markets
SMP1330-005LF
Clean-up limiter, +30 dBm input power,
+13 dBm flat leakage power, up to 2.5 GHz
Land mobile radio, military, infrastructure, and more
SMP1330-085LF
Low loss, high power, +30 dBm input power,
+13 dBm flat leakage power, up to 4 GHz
Land mobile radio, military, infrastructure, and more
CLA4603-085LF
Medium power, low loss, +33 dBm input power,
+13 dBm flat leakage power, up to 10 GHz
Land mobile radio, military, infrastructure, and more
CLA4606-085LF
Medium power, low loss, +35 dBm input power,
+18 dBm flat leakage power, up to 10 GHz
Land mobile radio, military, infrastructure, and more
CLA4609-086LF
Course limiter, high power handling, +43 dBm input power,
+41 dBm flat leakage power, up to 6 GHz
Land mobile radio, military, infrastructure, and more
CLA4610-085LF
Medium power limiter, 16 dBm threshold,
+39 dBm maximum power, operates up to 10 GHz
Infrastructure, WLAN, military and more
CLA4611-085LF
Medium power limiter, 25 dBm threshold,
+40 dBm maximum power, operates up to 10 GHz
Land mobile radio, military, infrastructure, and more
Schottky Diodes for Detector and Mixer Applications
Part Number
Features
Markets
Detector Diodes
SMS7621-060
Excellent sensitivity, low capacitance, 0201
WLAN, military, infrastructure, and more
SMS7621-040LF
Excellent sensitivity, low capacitance, 0402
WLAN, military, infrastructure, and more
SMS7621-005LF
Excellent sensitivity, low capacitance, series pair
Infrastructure, smart energy, infrastructure, and more
SMS7630-061
Best sensitivity, zero bias, 0201
WLAN, military, infrastructure, and more
SMS7630-040LF
Best sensitivity, zero bias, 0402
WLAN, military, infrastructure, and more
SMS3922-079LF
Medium barrier, high breakdown voltage
Infrastructure and more
Tuning Varactor Diodes for VCO, Voltage Tuned Filters and Phase Shifter Applications
Part Number
Features
Markets
Hyperabrupt Diodes
SMV1234-040LF
Low capacitance (6.5 pF @1 V, 2 pF @ 6 V), low resistance (0.8 Ω)
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV1232-040LF
High capacitance ratio at low reverse voltage: CT1/CT3 = 1.7 typical
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV1247-040LF
Low capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), high Q (1500)
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV1249-079LF
Medium capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V)
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV1255-079LF
High capacitance (64 pF @ 0.3 V, 5.2 pF @ 4.7 V)
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV1405-040LF
Ultra high Q (3200)
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV1413-079LF
Low resistance, high Q
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
SMV2201-040LF
Very low capacitance (0.85 pF @ 4 V), low phase noise
Automotive, smart energy, WLAN, test and measurement,
infrastructure, and more
Abrupt Diodes
2 | www.skyworksinc.com
PIN Diodes
RF
Common
ICTRL1
Features
• Low capacitance for high isolation
• Low resistance
• Low distortion
L1
ICTRL2
L3
C2
C1
C3
J1
J2
D1
Skyworks select PIN diodes are some of the most widely
used PIN diodes in the world, for applications which
range from RF switching in satellite television receiver low
noise block converters (LNB) to automotive remote garage
door openers to cable television automatic level controls.
D2
SMP1345-040LF
SMP1345-040LF
L2
Wide Bandwidth Single Pole Double Throw Switch
L1
PIN diodes are three layer diodes, comprised of a heavily
doped anode (the “P” layer) and a heavily doped cathode
(the “N” layer) separated by a virtually undoped intrinsic
layer (the “I” layer). Under forward bias, charge carriers
from the P and the N layers are forced into the I layer,
which reduces its RF impedance. When a reverse bias
voltage is applied across the PIN diodes, all free charge
carriers are removed from the I layer, thereby causing its
RF impedance to increase. This variable RF impedance
versus DC or low frequency bias signal allows the diode
to be used in RF switching circuits, in which the PIN diode
is either heavily forward-biased or reverse biased, or in
RF attenuation circuits, in which case the PIN diode
is utilized as a continuously-variable RF resistance by
controlling the magnitude of the DC bias current through
the diode.
VTUNE
C6
C8
R2
C1
C5
RF
RF
R1
R6
SMP1307-027LF
R7
C7
C2
R3
R4
R8
C4
R5
VREF
C9
Wide Bandwidth PIN Diode Variable Attenuator
Bias 1
Bias 1
RF
Bypass
DC
Block
RF
Bypass
ANT
RF
Choke
RF
Choke
DC
Block
Tx
Rx
DC
Block
DC
Block
SMP1302-085LF
SMP1302-085LF
High Power SPDT PIN Switch
PIN Diodes for Switch and Attenuator Applications
Part Number
Product Description
Key Features
Package (mm)
SMP1345-040LF
High isolation, fast switching PIN diode
Very low capacitance (0.14 pF), isolation 40 dB
0402 1.0 x 0.60 x 0.46
SMP1320-040LF
Fast switching / high isolation, low insertion loss
PIN diode
Low capacitance, low series resistance, small
footprint
0402 1.0 x 0.60 x 0.46
SMP1352-079LF
Large signal switching PIN diode
Low capacitance, SC-79
SC-79 1.6 x 0.8 x 0.6
SMP1302-085LF
High power shunt PIN diode
Power handling to 50 W CW
QFN 2 x 2 x 0.9
SMP1325-087LF
High power series PIN diode
Power handling to 34 W CW
QFN 2 x 2 x 0.9
SMP1307-004LF
Low distortion / high IP3 attenuator PIN diode
Low distortion common cathode configuration
SOT-23 2.37 x 2.92 x 1.0
SMP1307-027LF
Low distortion / high IP3 attenuator PIN diode
Low distortion, (4 diode) Pi configuration
SOT-5 2.8 x 2.9 x 1.8
SMP1304-085LF
High power shunt PIN diode
Power handling to 100 W CW
QFN 2 x 2 x 0.9
SMP1331-085LF
High power shunt PIN diode
Power handling to 50 W CW
QFN 2 x 2 x 0.9
www.skyworksinc.com | 3
Receiver Protection Limiter Diodes
Skyworks’ series of silicon limiter diode chips provides
passive receiver protection over a wide range of
frequencies from 100 MHz to beyond 30 GHz. These
devices utilize Skyworks well established silicon technology
for high resistivity and tightly controlled thin basewidth
PIN limiter diodes. Limiter circuits employing these devices
perform with strong limiting action and low loss.
The receiver protector function is performed by a specially
processed PIN diode, known as a limiter diode. The PIN
limiter diode can be described as an incident-powercontrolled, variable resistor. In the case when no large
input signal is present, the impedance of the limiter diode
is at its maximum, thereby producing minimum insertion
loss, typically less than 0.5 dB. The presence of a large
input signal temporarily forces the impedance of the diode
to a much lower value, producing an impedance mismatch
which reflects the majority of the input signal power back
towards its source.
The input power level at which the limiter diode’s
impedance starts to decrease in response to a large input
signal amplitude is primarily determined by the diode’s
I layer thickness. The diodes which “turn on” at the lowest
signal levels have the thinnest I layers.
Limiter Output
30
Output Power (dBm)
Features
• High power, mid-range cleanup designs
• Tight control of basewidth
Pin-IL
Limiting
Operation
Low Insertion
Loss Operation
20
1 dB
10
0
Threshold Level
-10
-10
0
10
20
30
Input Power (dBm)
Output Power vs. Input Power for
Single-Stage Limiter
DC
Block
DC
Block
Input
Output
RF
Choke
Limiter
PIN
Typical Single-Stage Limiter Circuit
Input
λ
4
DC
Block
“Coarse”
Limiter
PIN
DC
Block
RF
Choke
Output
“Cleanup”
Limiter
PIN
Multistage Limiter Circuit
Limiter Diodes for Receiver Protection
Part Number
Product Description
Key Features
Package (mm)
SMP1330-005LF
Clean-up limiter, medium power handling
+9 dBm threshold level
SOT-23 2.37 x 2.92 x 1
SMP1331-085LF
Clean-up limiter, medium power handling
+9 dBm threshold level
QFN 2 x 2 x 0.9
CLA4603-085LF
Clean-up limiter, low loss, medium power handling
+9 dBm threshold level
QFN 2 x 2 x 0.9
CLA4606-085LF
Low loss, medium power handling
+10 dBm threshold level
QFN 2 x 2 x 0.9
CLA4609-086LF
Coarse limiter, high power handling
+38 dBm threshold level
QFN 2 x 2 x 0.9
CLA4610-085LF
High power limiter
+16 dBm threshold level
QFN 2 x 2 x 0.9
CLA4611-085LF
High power limiter
+25 dBm threshold level
QFN 2 x 2 x 0.9
4 | www.skyworksinc.com
Tuning Varactor Diodes
Features
• Large available change in capacitance for wide
bandwidth
• Low resistance for low loss
Skyworks series of select silicon tuning varactor diodes
are used as the electrical tuning elements in voltage
controlled oscillators (VCOs), voltage variable analog
phase shifters and voltage tuned filters (VTFs). This family
of diodes includes abrupt junction tuning varactors,
useful for low loss, narrow band circuits, and hyperabrupt
junction varactors, useful for wide bandwidth VCOs and
VTFs and wide phase range variable phase shifters.
Tuning varactors are pn junction diodes. The depletion
region that forms at the junction of the diode acts as a
nearly-ideal insulator, which separates the highly-doped
anode from the cathode layer, thus forming a parallel
plate capacitor. The thickness of the depletion layer can be
increased by applying a reverse bias voltage to the diode.
The cathode layer’s doping profile is very carefully
designed to produce a tightly-controlled capacitance
versus reverse bias voltage performance characteristic.
The cathode layer of an abrupt junction diode has
uniform dopant concentration throughout its thickness,
which results in a low series resistance and moderately
large change in capacitance versus bias voltage. By
contrast, the doping concentration of cathode layer of
hyperabrupt varactor diode is designed to change by
several orders of magnitude, typically over the depth of
a few microns. This non-constant dopant concentration
versus depth of the hyperabrupt diode’s cathode layer
produces a much larger available change in capacitance
versus reverse voltage, necessary for wide bandwidth or
phase shift range
applications.
RF Input
RF Output
Varactor
VCC
Varactor Common
Cathode Pair
VR
RF
Choke
Varactor
VCONTROL
Variable Phase Shifter
C2
VCONTROL
L
RF Input
RF Output
Typical Voltage Controlled Oscillator with a
Common Cathode Pair of Tuning Varactors
Resonators
Voltage Tuned Filter
Tuning Varactor Diodes for VCO, Voltage Tuned Filters and Phase Shifter Applications
Part Number
Product Description
Key Feature
Package (mm)
SMV1234-040LF
Low capacitance tuning varactor diode
Low capacitance (6.3 pF @ 1 V, 2 pF @ 6 V),
low resistance (0.8 Ω) hyperabrupt
0402 1 x 0.6 x 0.46
SMV1232-040LF
Wide band width tuning varactor diode
High capacitance ratio at low reverse voltage:
CT1/CT3 = 1.7 typical
0402 1 x 0.6 x 0.46
SMV1247-040LF
Low capacitance and high Q tuning varactor diode
Low capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V),
high Q (1500) hyperabrupt
0402 1 x 0.6 x 0.46
SMV1249-079LF
Medium capacitance and wide tuning range diode
Medium capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V)
hyperabrupt
SC-79 1.6 x 0.8 x 0.6
SMV1255-079LF
High capacitance and wide tuning range diode
High capacitance (64 pF @ 0.3 V, 5.2 pF @ 4.7 V)
hyperabrupt
SC-79 1.6 x 0.8 x 0.6
SMV1405-040LF
Ultra high Q (3200) varactor for filter and VCO
Highest VB: 1.84 pF @ 1 V, 0.63 pF @ 30 V
0402 1 x 0.6 x 0.46
SMV1413-079LF
Low resistance and high Q abrupt tuning diode
Low resistance (0.35 Ω), high Q (2400) and low capacitance
(6.4 pF @ 1 V, 1.75 pF @ 30 V)
SC-79 1.6 x 0.8 x 0.6
SMV2201-040LF
Very low capacitance (0.85 pF @ 4 V),
low phase noise
Low inductance (0.45 nH), low phase noise
0402 1 x 0.6 x 0.46
www.skyworksinc.com | 5
Schottky Diodes
Features
• Low capacitance for high frequency operation
• Excellent sensitivity
• High reverse breakdown voltage
Skyworks series of select silicon Schottky diodes are
optimized for use as detector and mixer diodes at
frequencies from below 10 MHz to higher than 20 GHz.
This family of products includes medium, low and zero
bias detector (ZBD) barrier height Schottky junctions with
low junction capacitance and low series resistance.
Schottky junctions are formed by depositing specific
metals on either n-type-doped silicon (low or medium
barrier height) or on p-type-doped silicon (ZBD barrier
height). The characteristics of the diode are determined
by the type of metal deposited on the semiconductor
material as well as the type of dopant in the
semiconductor layer, among other parameters.
Schottky
Detector
Diode
RF Input
RF
Choke
Filter
Capacitor
Detected
Output
Filter
Resistor
Single Schottky Diode Detector
Schottky Diodes for Detector and Mixer Applications
Part Number
Product Description
Key Features
Package (mm)
SMS7621-060
Mixer applications up to 100 GHz and
detector applications up to 40 GHz
Low barrier height, low inductance 0.15 nH, 0201 footprint
0201 0.60 x 0.30 x 0.27
SMS7621-040LF
Detector Schottky diode
Low barrier height and low capacitance
0402 1.0 x 0.60 x 0.46
SMS7621-005LF
Series pair detector Schottky diodes
Low barrier height and low capacitance
SOT-23 2.37 x 2.92 x 1.0
SMS7630-061
Detector applications up to 40 GHz
Lowest barrier height, low inductance 0.15 nH, 0201 footprint
0201 0.60 x 0.30 x 0.27
SMS7630-040LF
Zero biased detector Schottky diode
Lowest barrier height for best sensitivity
0402 1.0 x 0.60 x 0.46
SMS3922-079LF
Medium barrier detector Schottky
diode
Medium barrier height with high breakdown voltage (>8 volts)
SC-79 1.6 x 0.8 x 0.6
6 | www.skyworksinc.com
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Cork
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Greensboro
Sales Offices
Design Centers
Manufacturing
USA
EUROPE
ASIA • PACIFIC
Headquarters: Massachusetts
Skyworks Solutions, Inc.
20 Sylvan Road
Woburn, MA 01801
Telephone: (781) 376-3000
Fax: (781) 376-3100
[email protected]
France
Skyworks Solutions, Inc.
60 rue Saint André des Arts
Bâtiment D
75006 Paris
France
Telephone: +33 1 43548540
Fax: +33 1 43540005
[email protected]
China
Skyworks Solutions, Inc.
Room 2901-02, Chong Hing
Finance Center
No. 288 Nanjing Road (W)
Shanghai 200003 China PRC
Telephone: +86 21 23066230
ext. 60167
Fax: +86 21 33663398
[email protected]
Japan
Skyworks Solutions Co., Ltd.
Tokyo Opera City Tower 36F
3-20-2 Nishi-Shinjuku
Shinjuku-ku
Tokyo, 163-1436
Japan
Telephone: +81 3 5308 5180
Fax: +81 3 5308 5190
[email protected]
Skyworks Solutions, Inc.
Room 2701, 27/F Tower 3
Kerry Plaza
No. 1 Zhongxinsi Road
Futian District
Shenzhen 518048 China PRC
Telephone: +86 755 8828 8399
Fax: +86 755 8828 8358
[email protected]
Korea
Skyworks Solutions, Inc.
12th Floor West Wing Posco Center
892 Daechi 4-Dong, Kangnam-Gu
Seoul, Korea 135-777
Telephone: +82 2 3490 3800
Fax: +82 2 553 5459
[email protected]
California
Skyworks Solutions, Inc.
5221 California Avenue
Irvine, CA 92617
Telephone: (949) 231-3000
Fax: (949) 231-3206
[email protected]
Skyworks Solutions, Inc.
3230 Scott Boulevard
Santa Clara, CA 95054
Telephone: (408) 330-1400
Fax: (408) 737-4611
[email protected]
Maryland
Skyworks Solutions, Inc.
5520 Adamstown Road
Adamstown, MD 21710
Telephone: (301) 695-9400
Fax: (301) 695-7065
[email protected]
United Kingdom
Skyworks Solutions, Ltd.
South Building
Walden Court
Parsonage Lane
Bishops Stortford
Hertfordshire CM23 5DB
United Kingdom
Telephone: +44 7920 838 883
[email protected]
Finland
Skyworks Solutions, Inc.
Keilaranta 16 (5th Floor)
FIN-02150 Espoo
Finland
Telephone: +358 9251 07131
Fax: +358 9 2510 7129
[email protected]
Skyworks Solutions, Inc.
Suite 1315, Tower B, COFCO Plaza,
No. 8
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Telephone: +8610 652 60859
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#05-15/16 Techpoint
Singapore 569059
Telephone: +65 64031971
Fax: +65 64031931
[email protected]
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Skyworks Solutions, Inc.
4 F, #198, Section 2
Tun Hwa S. Road
Taipei 106, Taiwan ROC
Telephone: +8862 5559 8992
Fax: +8662 2735 6508
[email protected]
www.skyworksinc.com | 7
For the latest information, please visit our website at www.skyworksinc.com
www.skyworksinc.com | PB123-15A 9/15
[email protected] | USA: 781-376-3000 | Asia: 886-2-2735 0399 | Europe: 33 (0)1 43548540 | NASDAQ: SWKS |