AOS Semiconductor Product Reliability Report AON4805L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON4805L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON4805L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AON4805L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AON4805L Standard sub-micron 20V Dual P-Channel MOSFET DFN 3x2 Bare Cu Ag Epoxy Au wire Epoxy resin with silica filler Up to Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 924 pcs HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 924 pcs MSL Precondition 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) - 2772 pcs 0 JESD22-A113 HAST 130°C , 85%RH, 33.3 psi, Vds = 80% of Vdsmax 96 hours 924 pcs 0 JESD22-A110 Autoclave 121°C , 29.7psi, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 0 Reference Standard JESD22-A108 0 JESD22-A108 Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 3.43 MTTF = 33270 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 3.43 9 MTTF = 10 / FIT = 33270 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3