SANKEN ELECTRIC CO., LTD. FMN-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G14S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 (Equivalent) 3. Absolute maximum ratings No. Item Symbol Unit Rating 1 Transient Peak Reverse Voltage VRSM V 400 2 Peak Reverse Voltage VRM V 400 3 Average Forward Current IF(AV) A 5.0 4 Peak Surge Forward Current IFSM A 70 5 I2t Limiting Value I2t A2s 24.5 6 Junction Temperature Tj °C -4 0 ~+1 5 0 7 Storage Temperature Tstg °C -4 0 ~+1 5 0 8 Dielectric Strength kV A.C. 1.0 Conditions Tc=121℃, Sinewave 10msec. Half sinewave, one shot 1msec≤t≤10msec Junction and case(1 minute) 4. Electrical characteristics (Ta=25°C, unless otherwise specified) No Item Symbol Unit Value Conditions 1 Forward Voltage Drop VF V 1.0 max. IF=5.0A 2 Reverse Leakage Current IR µA 50 max. VR=VRM 3 Reverse Leakage Current Under High Temperature H･IR mA 10 max. VR=VRM, Tj=150°C trr1 ns 100 max. trr2 ns 50 max. Rth(j-c) °C /W 4.0 max. 4 5 Reverse Recovery Time Thermal Resistance 040812 IF=IR=500mA, Tj=25°C 90% Recovery point IF=500mA, IR=1A, Tj=25°C 75% Recovery point Between Junction and case 1／4 61426-01 SANKEN ELECTRIC CO., LTD. FMN-G14S 5. Characteristics 040812 2／4 61426-01 SANKEN ELECTRIC CO., LTD. FMN-G14S 6. 減定格 Derating 040812 3／4 61426-01 SANKEN ELECTRIC CO., LTD. FMN-G14S 7. Package information 7-1 Package type, physical dimensions and material 4.2 2.8 C0.5 4.4 4.0 10.0 *1 *2 0.8 16.9 φ3.3 *3 13.5 ±0.5 3.9 1.35 0.45 0.85 +0.2 -0.1 指示なき公差±0.2 tolerance±0.2 5.08 2.4 Dimensions in ㎜ 7-2 Appearance The body shall be clean and shall not bear any stain, rust or flaw. 7-3 Marking Marking Type Name *1 *2 *3 Type Name Polarity Lot number 1st letter: Last digit of year FMN-G14S FMNG14 S 2nd letter: Month From 1 to 9 for Jan. to Sep., O for Oct., N for Nov., D for Dec. 3rd & 4th letter: Day ex. 4812 (Aug. 12, 2004) 040812 4／4 61426-01