S2AW THRU S2MW Surface Mount General Purpose Silicon Rectifiers 星合电子 Reverse Voltage - 50 to 1000 V ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Forward Current - 2 A SOD-123FL XH 1.8± 0.1 １．０±0.2 Cathode Band Top View ▪For surface mounted applications ▪Low profile package ▪Glass Passivated Chip Juntion ▪Ideal for automated placement ▪Lead free in comply with EU RoHS 2011/65/EU directives 2.8±0.2 1.2± 0.25 0.10-0.30 FEATURES MECHANICAL DATA 0.6±0.25 ▪Case: SOD-123FL ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪Approx. Weight:15mg 0.00048oz 3.7±0.2 Dimensions in millimeters Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S2AW S2BW S2DW S2GW S2JW S2KW S2MW Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 65 °C I F(AV) 2 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 60 A Maximum Instantaneous Forward Voltage at 2 A VF 1.1 V IR 5 50 μA Cj 30 pF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Ta = 25 °C Ta =125 °C 1） 2） Operating and Storage Temperature Range RθJA 50 T j , T stg -55 ~ +150 °C/W °C 1）Measured at 1 MHz and applied reverse voltage of 4 V D.C 2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ S2AW THRU S2MW Surface Mount General Purpose Silicon Rectifiers 星合电子 Reverse Voltage - 50 to 1000 V ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Forward Current - 2 A Fig.2 Typical Instaneous Reverse Characteristics Instaneous Reverse Current ( μ A) Average Forward Current (A) Fig.1 Forward Current Derating Curve 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 100 T J =150°C T J =125°C 10 T J =100°C 1.0 T J =75°C T J =50°C 0.1 T J =25°C 0.01 0 Fig.3 Typical Forward Characteristic Junction Capacitance ( pF) 2 5° C =1 TJ TJ = 00 50 °C °C 1.5 =1 800 Fig.4 Typical Junction Capacitance 2.0 TJ Instaneous Forward Current (A) 600 Instaneous Reverse Voltage (V) Ambient Temperature (°C) 1.0 0.5 0.6 400 200 100 10 T J =25°C 1 0.7 0.8 0.9 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ