1N5399G

星合电子
1N5391G - 1N5399G
XINGHE ELECTRONICS
1.5A GLASS PASSIVATED RECTIFIER
Features
·
·
·
Glass Passivated Die Construction
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 50A Peak
Low Reverse Leakage Current
Plastic Material - UL Flammability
Classification 94V-0
DO-15
XH
·
·
·
1.0(25.4)
MIN
0.140(3.6)
0.104(2.6)
DIA
0.300(7.6)
0.230(5.6)
Mechanical Data
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·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.4 grams (approx)
Marking: Type Number
1.0(25.4)
MIN
0.034(0.9)
0.028(0.7)
DIA
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TA = 55°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
@ IF = 1.5A
@TA = 25°C
@ TA = 100°C
I2t Rating for Fusing (t < 8.3ms)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
1N53
91G
1N53
92G
1N53
93G
1N53
95G
1N53
97G
1N53
98G
1N53
99G
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.5
A
IFSM
50
A
VFM
1.1
V
IRM
5.0
200
µA
I 2t
10.4
A 2s
Cj
15
pF
RqJA
80
K/W
Tj, TSTG
-65 to +175
°C
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
1
GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)
10
1.5
1.2
0.9
0.6
0.3
0
40
60
80
100
120
140
160
180
1.0
0.1
Tj = 25ºC
PULSE WIDTH = 300µs
2% DUTY CYCLE
0.01
0.4
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
50
100
40
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.8
30
20
10
10
8.3ms Single half sine-wave
JEDEC Method
0
1
Tj = 25°C
f = 1 MHz
1.0
100
10
1.0
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1000
100
Tj = 150°C
10
Tj = 125°C
1.0
0.1
0.01
Tj = 25°C
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2
GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM