WS3130 Product Description WS3130 High Performance LED Driver Features General Description Single stage PFC Primary side regulation without Secondary Feedback Quasi Resonance (QR) mode with Confidential primary side offline LED lighting regulator which achieves Fly-back topology high power factor. Real-Current control to meet accurate output current Very less components Programmable input AV voltage compensation Leading Edge Blanking on CS/FB pin design Protection Features components and the opto-coupler. Building in hysteresis OTP VDD over voltage protection and works in Quasi Resonance mode (QRM) in order to Cycle by cycle current limiting on CS pin reduce Secondary peak current protection on CS pin Output short to GND protection eliminate the power loss caused by start-up resistors to Output programmable over voltage protection provide a high efficiency solution for lighting applications. FB and CS pins default protection The WS3130 is a single-power stage, isolated and The proprietary real-current control method can control the LED current accurately from the primary side information. It can significantly simplify the LED lighting system by eliminating the secondary side feedback The WS3130 integrates active power factor correction the MOSFET switching losses. With a building in 700V start-up MOSFET, IC can The external programmable line voltage compensation provides a more precise output Applications current throughout the universal AC input voltage range. LED lighting Down light removes the signal glitch and results in reduced external Tube lamp components and system cost. The multi-protection features of PAR lamp WS3130 Bulb The leading edge blanking circuit on the CS/FB input Greatly enhance the system reliability and safety. Features VDD and output over voltage protection; output short circuit protection cycle-by-cycle current limit and secondary peak current protection on CS pin, VDD UVLO and auto-restart and over-temperature protection. The driver output voltage is clamped at 18V to protect the external power MOSFET. WS3130 is offered in SOP-8 packages. WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 1216 WS3130 Product Description Typical Application Circuit Pin Definition and Device Marking WS3130 is offered in SOP-8 packages，as shown below： WS3130S8P A：Product Code X：Internal Code BCY：Internal Code For QC YMX：D/C Pin Function Description Pin Name Pin No. Pin Type DIP8/SOP8 Function Description Loop compensation for constant current regulation.Output of the COMP 1 I FB 2 I/O CS 3 I Current sense pin, a resistor connects to sense the MOSFET current. GND 4 POWER DRV 5 O Power Ground Totem-pole output to drive the external power MOSFET Maximum Voltage is internally clamped to 18V. VDD 6 POWER Power supply NC 7/8 / NO connect WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI OTA.The RC work is placed between it and GND. Detect output diode zero current to regulate output current.connect to a resistor divider for sensing the reflected voltage from auxiliarywinding MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 2/8 WS3130 Product Description Block Diagram Ordering Information Package 8-Pin SOP8, IC Marking Information Purchasing Device Name WS3130S8P WS3130S8P Pb-free Recommended Operating Condition Symbol Parameter Value Unit VCC VCC Supply Voltage 10~28 V TA Operating temperature -20~85 ℃ Symbol Parameter Value Unit VCC VCC pin input voltage 28 V VFB Feedback pin input voltage -0.3~6 V VCS Current sense pin input voltage -0.3~6 V VCOMP Compensation pin voltage -0.3~6 V VDRV DRV pin input voltage 18 V TJ Operating junction temperature 150 ℃ TSTG Storage temperature range -55~150 ℃ Absolute Maximum Ratings Note 1: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions section are not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 3/8 WS3130 Product Description ESD Information Symbol Parameter Value Unit VESD-HBM Human body model on all pins 2 KV VESD-MM Machine model on all pins 200 V Electrical Characteristics(Unless otherwise specified，TA=25℃，VCC=15V) Symbol Parameter Test Conditions IOP Operating Current Gate Open VDDON MIN Typ. MAX Unit VDD Pin 1 mA Turn-on Threshold Voltage 16 V VDDOFF Turn-on Threshold Voltage 9 V VDDOVP VDD Over Voltage Protection 25 V 0.24 V CMP Pin VREF Reference voltage for OTA input ICMP_SINK CMP maximal sink current 50 uA ICMP_SOURCE CMP maximal source current 10 uA VCMP_MAX CMP max. voltage 4.0 V 5.0 V FB Pin VFB_SINK FB voltage when sink currentt IFB_SINK=2mA VFB_SOURCE FB voltage when source currentt IFB_Source=4mA VFB_ZVD FB zero voltage detect 0.2 V VFB_OVP FB voltage when output OVP 3.6 V VFB_SCP FB voltage when trigger SCP 1.0 V 1.0 V -0.1 GND +0.1 V CS Pin Cycle by Cycle current limited on VCS1 CS TBLACK FB=0V Leading-Edge Blanking Time 300 400 500 nS Oscillator FOSC_MAX Maximal Frequency 130 KHZ FOSC_MIN Minimal Frequency 30 KHZ GATE Drive Output (GATE Pin) TR Rise Time CL=1nF 200 nS TF Fall Time CL=1nF 100 nS Over Temperature Protection OTPH Over Temperature Lockout 150 ℃ OTPL Over Temperature Resume 125 ℃ WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 4/8 WS3130 Product Description Operation The WS3130 is a primary side control offline LED I L peak Vp Sint Lm controller that incorporates all the features for performance Ton I Lavg Vp Sint 2 Lm Ton2 f osc LED lighting. LED current can be method form the primary The peak current side eliminate the unwanted harmonic noise injected onto the I L peak and average current I L avg of transformer will be shaped as AC input sinusoid too AC line. Ton beacause Startup f osc and both are constant and then high power factor can be achieved. During start-up, the current can charge up the VDD hold capacitor. the turn on and turn off threshold of WS3130 are approximately 15V and 9V respectively. The 6V hysteresis Real Current Feedback Regulator without Secondary The proprietary real current control method allows the voltage is implemented to prevent shutdown from a voltage WS3130 to accurately control the secondary side LED current dip during start-up. from the primary side information.The output LED mean Quasi Resonance mode (QRM) current can be calculated approximately as: During the external power MOSFET on time (TON), the I OUT rectified input voltage is applied across the primary side inductor (Lm) and the primary current increases linearly from zero to the peak value (IPK).When the external power MOSFET turns off, the energy stored in the inductor forces the secondary side diode to be turn-on, and the current of the inductor begins to decrease linearly from the peak value to zero. When the current decreases to zero, the parasitic Where V LED, REF MOSFET drain-source voltage decrease, this decreasing is also reflected on the auxiliary winding. The zero current detector in FB pin generates the turn on signal of the external MOSFET when the FB voltage is lower than 0.2V is the secondary output current of is the inner reference voltage. turns of primary winding and N s is Np is number of number of turns of the secondary winding. Auto Starter resonant of induct and all the parasitic capacitance makes the power I OUT 1 VREF N P 2 RCS N S The WS3130 integrates an auto starter,the starter starts timing when the MOSFET is turned on,if FB fails to send out another turn on signal after 130 μ s,the starter will automatically send out the turn on signal which can avoid the IC unnecessary shut down by FB missing detecion. and ensures the MOSFET turn on at a valley voltage .As a result, there are virtually no primary switch turn-on losses and Minimal Off Time no secondary diode reverse-recover losses. It ensures high efficiency and low EMI noise. The frequency. WS3130 operates with variable switching The frequency is changing with the input instantaneous line voltage. To limit the maximum frequency Active Power Factor Correction(APFC) and get a good EMI performance, WS3130 employs an WS3130 is designed with quasi-resonance and constant on time Ton to achieve high power factor under normal operation.The on time of WS3130 vary with input AC voltage VP Sint basically internal minimum off time limiter—3.5µs, show as figure. Leading-Edge Blanking for CS pin and load condition and its value is constant because of very large loop compensaion capacitance on CMP pin.According to following equations, WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI In order to avoid the premature termination of the switching pulse due to the parasitic capacitance discharging at MOSFET turning on,an internal leading edge blanking(LEB) MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 5/8 WS3130 Product Description unit is employed between the CS Pin and the current typical is 1.0V, the power MOSFET is turned off for the comparator input.During the blanking time,the path,CS Pin to remainder of that cycle. the current comparator input,is blocked.Figure shows the Leading-Edge Blanking For FB Pin leading edge blanking. As shown in Fig, when the power MOSFET is turned off, a damping voltage spike will occur at FB pin due to parasitic capacitance of power MOSFET and leak inductor of transformer. An internal leading edge blanking (LEB) was introduced to filter this noise. Output Short Circuit Protection When the output short circuit happens, the positive Output over Voltage Protection Output over voltage protection plateau of auxiliary winding voltage is also near zero. The IC can prevent the components from damage in the over voltage condition.The will shut down and restart again once FB voltage below 1.0V and lasts falls for about 20mS. positive plateau of auxiliary winding voltage is proportional to the output voltage. The OVP uses the auxiliary winding Thermal Shut Down The voltage instead of directly monitoring the output voltage. thermal shutdown circuitry senses the die Once the FB pin voltage is higher than 3.6V, the OVP signal temperature.The threshold is set at 150℃ typical with a 25℃ will be triggered and latched, the gate driver will be turned off hysteresis.When the die temperature rises above this and the IC work at quiescent mode, the VDD voltage dropped threshold (150 ℃ ),the 840X turn off the power MOSFET by below the UVLO which will make the IC shut down and the DRV and remains turning off until the die temperature falls by system restarts again.The output OVP setting point can be 25℃,at which point it is re-enabled. calculated as: VOUT _ OVP VOUT_OVP VDD over Voltage Protection Ns R RFBL 3.6 FBH N AUX RFBL WS3130 provides an over voltage protection circuit for VDD pin. The GATE output ……Output over voltge protection value will shut down once the VDD voltage exceeds 25V (typical value), the IC would restart until N AUX ……the auxiliary winding turns N s ……the secondary winding turns VDD drops to 9.0V. Fault protection Current Limit There is several default protections were integrated in The current limit circuit senses the current of inductor by CS pin. When this current exceeds the internal threshold, WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI the WS3130 to prevent the IC from being damaged which including FB pin open or short, CS pin open. MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 6/8 WS3130 Product Description SOP-8 Package Information B2 A1 A2 0.5* 0.125± 0. 05 球形标记 D D1 B B1 A C4 A3 R2 θ4 C C1 C2 θ2 C3 R1 θ1 θ3 Winsemi Dimensions in Millimeters Dimensions in Inches Min Max Min Max A 4.70 5.10 0.185 0.201 B 3.70 4.10 0.146 0.161 C 1.30 1.50 0.051 0.059 A1 0.35 0.48 0.014 0.019 A2 1.27TYP 0.05TYP A3 0.345TYP 0.014TYP B1 5.80 B2 5.00TYP C1 0.55 0.70 0.022 0.028 C2 0.55 0.70 0.022 0.028 C3 0.05 0.225 0.002 0.009 C4 0.203TYP 0.008TYP D 1.05TYP 0.041TYP D1 0.40 Symbol WINSEMI MICROELECTRONICS www.winsemi.com 6.20 0.228 0.244 0.197TYP 0.80 WINSEMI 0.016 MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 0.031 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 7/8 WS3130 Product Description NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Chegongmiao, FuTian, Shenzhen, P.R. China Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 8/8