1SS380

1SS380
Silicon Epitaxial Planar Diode
FEATURES
Pb
z
Small surface mounting type
z
High speed
z
Suitable for high packing density
Lead-free
APPLICATIONS
z
High speed switching
SOD-323
ORDERING INFORMATION
Type No.
Marking
Package Code
1SS380
6D
SOD-323
MAXIMUM RATING @ Ta=25℃
unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC Reverse Voltage
VR
35
V
Peak forward Current
IFSM
225
mA
Average Rectified Output Current
IO
100
mA
Surge current(1s)
Isurge
400
mA
Power Dissipation
PD
200
mW
Junction temperature
Tj
125
℃
Storage temperature
TSTG
-55 to+125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Forward voltage
Max.
Unit
Conditions
VF
1.2
V
IF=100mA
Reverse current
IR
10
nA
VR=20V
Capacitance between terminals
CT
5
pF
VR=0.5V,f=1MHz
２０１４－０３　０１版
Min.
Typ.
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1
1SS380
Silicon Epitaxial Planar Diode
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
２０１４－０３　０１版
ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ
1SS380
Silicon Epitaxial Planar Diode
PACKAGE OUTLINE
Plastic surface mounted package
SOD-323
SOD-323
K
C
A
B
Dim
Min
Max
A
1.60
1.80
B
1.20
1.40
C
0.9 Max
D
0.30 Typical
D
H
E
J
E
0.22
0.42
H
0.02
0.1
J
K
0.1 Typical
2.55
2.75
All Dimensions in mm
SOLDERING FOOTPRINT
0.63
0.83
1.60
2.85
Unit ：mm
PACKAGE
INFORMATION
Device
Package
Shipping
1SS380
SOD-323
3000/Tape&Reel
２０１４－０３　０１版
ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ