1N3879-1N3883 FAST RECOVERY SILICON RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol 1N3879 1N3880 1N3881 1N3882 1N3883 Working peak reverse voltage Parameters VRWM 50V 100V 200V 300V 400V Peak repetitive reverse voltage VRRM 50V 100V 200V 300V 400V Operating temperature range TJ -65 to +150°C Storage temperature range Tstg -65 to +175°C Maximum thermal resistance RθJC 2.0°C/W junction to case Mounting torque 12-15 inch pounds Weight .16 ounces (5.0 grams) typical Add “R” to part numbers for reverse polarity. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameters Symbol Value Test Condition IF(AV) 6 Amps TC = 100°C, square wave, RθJC = 2.0°C/W Maximum surge current IFSM 200 Amps 8.3ms, half-sine, TC = 100°C Maximum peak forward voltage VFM 1.40 Volts IFM = 20A: TJ = 25°C* Maximum peak reverse current IRM 15 µA VRRM, TJ = 25°C Maximum peak reverse current IRM 3.0 mA VRRM, TJ = 150°C Maximum reverse recovery time tRR 200nS IF = 1A dc, VR = 30V, di/dt = 25A/µs, TC = 55°C Typical junction capacitance CJ 115pF VR = 10V, f = 1MHz, TJ = 25°C Average forward current Pulse test: pulse width 300µsec. Duty cycle 2% Rev. 20150317 1N3879-1N3883 FAST RECOVERY SILICON RECTIFIER High-reliability discrete products and engineering services since 1977 MECHANICAL CHARACTERISTICS Case DO-4(R) Marking Alpha-numeric Normal polarity Cathode is stud Reverse polarity Anode is stud (add “R” suffix) DO-4(R) A B C D E F G H Inches Min Max 0.078 0.422 0.453 0.405 0.800 0.420 0.440 0.250 0.424 0.066 - Millimeters Min Max 1.981 10.719 11.506 10.287 20.320 10.668 11.176 6.350 10.770 1.676 - Rev. 20150317 High-reliability discrete products and engineering services since 1977 1N3879-1N3883 FAST RECOVERY SILICON RECTIFIER Rev. 20150317