AOS Semiconductor Product Reliability Report AOW298, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOW298. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOW298 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOW298 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOW298 Standard sub-micron Middle voltage N channel process Package Type TO262 Lead Frame Bare Cu Die Attach Soft solder Bond wire Al wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOW298 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@250°c Temp = 150°c , Vgs=100% of Vgsmax - 11 lots 1815pcs 0 JESD22A113 168hrs 500 hrs 1000 hrs 2 lots 385pcs 0 JESD22A108 Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77 pcs / lot 385pcs 0 JESD22A108 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°c , 29.7psi, RH=100% 100 hrs (Note A*) 5 lots 77 pcs / lot 275pcs 0 JESD22A110 96 hrs (Note A*) 11 lots 55 pcs / lot 847pcs 0 JESD22A102 (Note A*) 77 pcs / lot 0 JESD22A104 HTGB HTRB HAST Pressure Pot Temperature Cycle -65°c to 150°c , air to air, 250 / 500 cycles Lot Attribution Total Sample size Number of Failures Reference Standard 3 lots (Note A*) 2 lots 3 lots 9 lots (Note A*) 693pcs 77 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 16536 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOW298). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT = 1.45 x 10 hrs = 16536 years / [2x (4x77x168+6x77x1000) x258] = 7 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3