1N1199(A,B)-1N1206(A,B) SILICON POWER RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol 1N1199 Peak reverse voltage Parameter VR 50V Operating & storage temperature range TJ, Tstg -65 to +200°C RθJC 2.5°C/W junction to case Maximum thermal resistance 1N1200 100V 1N1201 1N1202 1N1203 1N1204 1N1205 1N1206 150V 200V 300V 400V 500V 600V Mounting torque 25-30 inch pounds Weight .16 ounces (5.0 grams) typical Add “R” to part numbers for reverse polarity. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Value Test Condition Average forward current IF(AV) 12 Amps TC = 170°C, half-sine wave, RθJC = 2.5°C/W Maximum surge current IFSM 250 Amps 8.3ms, half-sine, TJ = 200°C Maximum I2t for fusing I2t 260 A2s Maximum peak forward voltage VFM 1.2 Volts IFM = 30A: TJ = 25°C* Maximum peak reverse current IRM 10 µA VRRM, TJ = 25°C Maximum peak reverse current IRM 1.0 mA VRRM, TJ = 150°C* Maximum recommended operating frequency 10 kHz Pulse test: pulse width 300µsec. Duty cycle 2% Rev. 20150317 1N1199(A,B)-1N1206(A,B) SILICON POWER RECTIFIER High-reliability discrete products and engineering services since 1977 MECHANICAL CHARACTERISTICS Case DO-4(R) Marking Alpha-numeric Normal polarity Cathode is stud Reverse polarity Anode is stud (add “R” suffix) DO-4(R) A B C D E F G H Inches Min Max 0.078 0.422 0.453 0.405 0.800 0.420 0.440 0.250 0.424 0.066 - Millimeters Min Max 1.981 10.719 11.506 10.287 20.320 10.668 11.176 6.350 10.770 1.676 - Rev. 20150317 High-reliability discrete products and engineering services since 1977 1N1199(A,B)-1N1206(A,B) SILICON POWER RECTIFIER Rev. 20150317