Diodes SMD Type Silicon Epitaxial Planar Diode 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit V Reverse Voltage VR 10 Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range Electrical C haracteristics T a = 25 P aram eter S ym bol R everse V oltage VR R everse C urrent C apacitance C onditions M in IR = 1 10 A Typ M ax V IR V R = 10 V C 1V f = 1 M H z;V R = 1 V 15 16 17 C 4V f = 1 M H z;V R = 4 V 7.8 8 8.7 C apacitance R atio C 1V /C 4V S eries R esistance rs 3 1.3 V R = 1V , f = 470 M H z U nit nA pF 2 0.28 0.5 Marking Marking TF www.kexin.com.cn 1