Vishay Semiconductors General Information Explanation of Technical Data Vishay light emitting diodes and displays are generally designated in accordance with the Vishay designation system: TL... = Light emitting diode TD... = Display The following figures show how the components can be identified. Type Designation Code for LEDs T L Series B C D H L M P R S U V W Packing Options Package Design please refer to chapter Packing and Order Information 1 = 0603 LED 2 = 1.8 mm 3 = SMD LED PLCC-2/3/4 (stand-off) 4 = 3 mm Blink Ultrabright Double hetero High efficiency Low current SMD / Mini / 0603 LED Side view Resistor Symbol Universal Backlighting TELUX® (stand-off) 5 = 5 mm (stand-off) 6 = 5 mm (without stand-off) ® 7/8/9 = TELUX 00...99 Selection Type K,D,R,H T,L,S O,F Y,E,A G,C,YG P,PG TG BG B V W Wavelength 612...650 Color Red 598...611 581...594 565...575 555...567 525 505 470 Orange Yellow Green Pure Green True Green Blue Green Blue Bi-Color White x = 0.33, y = 0.33 Example: TLME3100 GS08 = SMD, yellow, 8 mm Blister tape, 1500 pcs 18985 Document Number: 80102 Rev. 1.2, 05-Jul-04 www.vishay.com 43 Vishay Semiconductors T D S Series Character Size Pinning S = Single digit C = Clock module 11,07 = 7 mm 31,10 = 10 mm 51,13 = 13 mm 5 common anode 6 common cathode Color R,L,O Y G Red, 620...660 nm Yellow, 585 nm Green, 565 nm Selection Type Example: TDSG5160 = Display single digit green, 13 mm, common cathode www.vishay.com 44 18986 Document Number: 80102 Rev. 1.2, 05-Jul-04 Vishay Semiconductors Symbols and Terminology – Alphabetically A A Anode, anode terminal Radiant sensitive area That area which is radiant sensitive for a specified range. AQL Acceptable Quality Level C Capacitance C Cathode, cathode terminal ° C Celsius Unit of the Celsius temperature scale; Symbols: T T (° C) = T (K) – 273 cd Candela SI unit of luminous intensity IV Cj Junction capacitance Capacitance due to a PN-junction of a diode. It decreases with increasing reverse voltage. Ev Illuminance, illumination (at a specific point on a surface).Quotient of the luminous flux incident on an element of the surface containing the point, divided by the area of that element. lm Lv 2 d Φv L v = ----------------------------------------dΩ × dA × cos θ lx dΦ E V = ----------VdA Unit: lx (Lux) Frequency Unit: Hz (Hertz) IF Continuous forward current The current flowing through a diode in the direction of lower resistance. IFAV Average (mean) forward current IFM Peak forward current IFSM Surge forward current IR Reverse current, leakage current Current which flows when reverse bias is applied to a semiconductor junction. Iv Luminous intensity (of a source in a given direction). Quotient of the luminous flux leaving the source propagated in an element of solid angle containing the given direction by the element of solid angle. Mv f dΦ I v = ----------VdΩ Ivav K Unit: cd (candela), lm/sr Luminous intensity, average Kelvin Document Number: 80102 Rev. 1.2, 05-Jul-04 he unit of absolute temperature T (also called the Kelvin temperature); can also be used for temperature changes (formerly ° K). Lumen SI-unit of luminous flux, ΦV Luminance (in a given direction, at a point on the surface of a source or a receptor, or at a point on the path of a beam). Quotient of the luminous flux leaving, arriving at, or passing through an element of surface at this point. It is propagated in directions defined by an element of the solid angle containing the given direction, divided by the product of the solid angle of the cone and the area of the orthogonal projection of the element of surface on a plane perpendicular to the given direction. Unit: cd/m2 Lux SI-unit of illumination, Ev Luminous exitance (at a specific point on a surface). Quotient of the luminous flux leaving an element of the surface containing the point, divided by the area of that element. dΦ M V = ----------VdA Ptot Pv Qv Unit: lm/m2 Total power dissipation Power dissipation, general Quantity of light Product of luminous flux and its duration Qv = ∫ Φv × dt Unit: lm s (lumen-second) RthJA Thermal resistance, junction-ambient RthJC Thermal resistance, junction case sr Steradian SI-unit of a solid angle Ω T Period (duration) T Temperature 0 K = – 273.16 ° C Unit: K (Kelvin), ° C (Celsius) www.vishay.com 45 Vishay Semiconductors t Time Tamb Ambient temperature If self-heating is significant: Temperature of the surrounding air below the device, under conditions of thermal equilibrium. If self-heating is insignificant: Air temperature in the intermediate surroundings of the device. Tamb Ambient temperature range As an absolute maximum rating: The maximum permissible ambient temperature range. TC Temperature coefficient The ratio of the relative change of an electrical quantity to the change in temperature (ΔT) which causes it, under otherwise constant operating conditions. Tcase Case temperature The temperature measured at a specified point on the case of a semiconductor device. Unless otherwise stated, this temperature is given as the temperature of the mounting base for devices with metal can. td Delay time tf Fall time Tj Junction temperature The spatial mean value of temperature during operation. toff Turn-off time ton Turn-on time tp Pulse duration tr Rise time ts Storage time Tsd Soldering temperature Maximum temperature allowed for soldering at a specified distance from case and its duration. Tstg Storage temperature range The temperature range at which the device may be stored or transported without any applied voltage. V(BR) Breakdown voltage Reverse voltage at which a small increase in voltage results in a sharp rise of reverse current. It is given in the technical data sheet for a specified current. VF The voltage across the diode terminals which results from the flow of current in the forward direction. VR Reverse voltage www.vishay.com 46 Voltage drop which results from the flow of reverse current. VS, VCCSupply voltage ϕ The plane angle through which an emitter can be rotated in both directions away from the optical axis, before the electrical output of a linear detector facing the emitter falls to half the maximum value. Angle φ = α / 2 9511389 Figure 1. Angle of half intensity λ λ0.5 λd λp Δλ Φv Wavelength The wavelength of an electromagnetic radiation Range of spectral bandwidth (50 %) The range of wavelengths where the spectral sensitivity or spectral emission remains within 50 % of the maximum value. Dominant wavelength The dominant wavelength of a color stimulus is the wavelength of the monochromatic stimulus that, when additively mixed in suitable proportions with an achromatic stimulus, yields a color which matches the color stimulus in question. Peak wavelength Wavelength of peak sensitivity or emission Spectral half bandwidth The wavelength interval within which the spectral sensitivity or spectral emission falls to half peak value. Luminous flux Quantity derived from radiant power by evaluating the radiation according to its effect upon a selective receptor, the spectral sensitivity of Document Number: 80102 Rev. 1.2, 05-Jul-04 Vishay Semiconductors Ω which is defined by the standard spectral luminous efficiencies. tending the cone is a measure of the solid angle dQ V Φ V = ----------dt A Ω = ---- [ sr ] 2 r Unit: lm (lumen) Solid angle The space enclosed by rays which emerge from a single point and lead to all the points of a closed curve. If it is assumed that the apex of the cone formed in this way is the center of a sphere with radius r and that the cone intersects with the surface of the sphere, then the size of the surface area (A) of the sphere sub- There are 4π sr in a complete sphere. A cone with an angle of half sensitivity α forms a solid angle of Ω = 2π (1-cos α/2) = 4π sin2 α/4 Unit: sr (Steradian) Ω = 4π sr α = 65.5° Ω = 1.0sr α = 2 arc cos (1 – / 2 π) α = 20.5° Ω = 0.01sr Ω = 0.1sr α = 6.5° 94 8584 Figure 2. Solid angle Document Number: 80102 Rev. 1.2, 05-Jul-04 www.vishay.com 47 Vishay Semiconductors Data Sheet Construction Data sheet information is generally presented in the following sequence: • Description • Features • Applications • Absolute maximum ratings • Optical and electrical characteristics • Typical characteristics (diagrams) • Dimensions (mechanical data) Additional information on device performance is provided if necessary. Description The following information is provided: Type number, semiconductor materials used, sequence of zones, technology used, device type and, if necessary, construction. Also, short-form information on the typical applications and special features is given. Absolute Maximum Ratings These define maximum permissible operational and environmental conditions. If any one of these conditions is exceeded, this could result in the destruction of the device. Unless otherwise specified, an ambient temperature of 25 ± 3 ° C is assumed for all absolute maximum ratings. Most absolute ratings are static characteristics; if they are measured by a pulse method, the associated measurement conditions are stated. Maximum ratings are absolute (i.e., interdependent). Any equipment incorporating semiconductor devices must be designed so that even under the most unfavorable operating conditions, the specified maximum ratings of the devices used are never exceeded. These ratings could be exceeded because of changes in supply voltage, the properties of other components used in this equipment, control settings, load conditions, drive level, environmental conditions and the properties of the devices themselves (i.e., ageing). Some thermal data is given under the heading ‘Absolute Maximum Ratings’ (e.g., junction temperature, storage temperature range, total power dissipation). This is because it imposes a limit on the application range of the device. The thermal resistance junction ambient (RthJA) quoted is that which would be measured without artificial cooling, i.e., under worst-case conditions. www.vishay.com 48 Temperature coefficients, on the other hand, are listed together with the associated parameters under ‘Optical and Electrical Characteristics’. Optical and Electrical Characteristics The most important operational optical and electrical characteristics (minimum, typical and maximum values) are grouped under this heading, together with associated test conditions supplemented with graphs. Typical Characteristics (Diagrams) Besides the static (DC) and dynamic (AC) characteristics, a family of curves is given for specified operating conditions. Here, the typical independence of individual characteristics is shown. Dimensions (Mechanical Data) In this section, important dimensions and connection sequences are given, supplemented by a circuit diagram. Case outline drawings carry DIN-, JEDEC or commercial designations. Information on angle of sensitivity or intensity and weight completes the list of mechanical data. Note: If the dimensional information does not include any tolerances, then the following applies: Lead length and mounting hole dimensions are minimum values. Radiant sensitive or emitting area respectively are typical, all other dimensions are maximum. Any device accessories must be ordered separately and the order number must be quoted. Additional Information Preliminary specifications This heading indicates that some information given here may be subject to slight changes. Not for new developments This heading indicates that the device concerned should not be used in equipment under development. The device is, however, available for present production. Document Number: 80102 Rev. 1.2, 05-Jul-04